Philips PIP3210-R Owner's manual

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
DESCRIPTION QUICK REFERENCE DATA
Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in ILNominal load current (ISO) 9 A
a 5 pin plastic surface mount
package. SYMBOL PARAMETER MAX. UNIT
APPLICATIONS VBG Continuous off-state supply voltage 50 V
General controller for driving ILContinuous load current 20 A
lamps, motors, solenoids, heaters. TjContinuous junction temperature 150 ˚C
RON On-state resistance Tj= 25˚C 38 mΩ
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1Ground
2Input
3 (connected to mb)
4Status
5Load Fig. 2. Fig. 3.
mb Battery
BATT
LOAD
INPUT
GROUND
STATUS POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
mb
12 45
3
B
G
L
I
S
HSS
TOPFET
September 2001 1 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VBG Continuous supply voltage 0 50 V
ILContinuous load current Tmb ≤95˚C - 20 A
PDTotal power dissipation Tmb ≤25˚C - 67 W
Tstg Storage temperature -55 175 ˚C
TjContinuous junction temperature1- 150 ˚C
Tsold Mounting base temperature during soldering - 260 ˚C
Reverse battery voltages2
-VBG Continuous reverse voltage - 16 V
-VBG Peak reverse voltage - 32 V
Application information
RI, RSExternal resistors3to limit input, status currents 3.2 - kΩ
Input and status
II, ISContinuous currents -5 5 mA
II, ISRepetitive peak currents δ≤0.1, tp = 300 µs -50 50 mA
Inductive load clamping IL= 10 A, VBG = 16 V
EBL Non-repetitive clamping energy Tj≤150˚C prior to turn-off - 150 mJ
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance4
Rth j-mb Junction to mounting base - - 1.52 1.86 K/W
1 For normal continuous operation. A higher Tjis allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
September 2001 2 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
STATIC CHARACTERISTICS
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG= 1 mA 50 55 65 V
VBL Battery to load IL= IG= 1 mA 50 55 65 V
-VLG Negative load to ground IL= 10 mA 18 23 28 V
-VLG Negative load voltage1IL= 10 A; tp= 300 µs202530V
Supply voltage battery to ground
VBG Operating range25.5 - 35 V
Currents 9 V ≤VBG ≤16 V
IBQuiescent current3VLG = 0 V - - 20 µA
Tmb = 25˚C - 0.1 2 µA
ILOff-state load current4VBL = VBG --20µA
Tmb = 25˚C - 0.1 1 µA
IGOperating current5IL= 0 A - 2 4 mA
ILNominal load current6VBL = 0.5 V Tmb = 85˚C 9 - - A
Resistances VBG ILtp7Tmb
RON On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 28 38 mΩ
150˚C - - 70 mΩ
RON On-state resistance 6 V 10 A 300 µs 25˚C - 36 48 mΩ
150˚C - - 88 mΩ
RGInternal ground resistance IG= 10 mA 95 150 190 Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tprefers only to the applied load current.
September 2001 3 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
INPUT CHARACTERISTICS
9 V ≤VBG ≤16 V. Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IIInput current VIG = 5 V 20 90 160 µA
VIG Input clamping voltage II= 200 µA 5.5 7 8.5 V
VIG(ON) Input turn-on threshold voltage - 2.4 3 V
VIG(OFF) Input turn-off threshold voltage 1.5 2.1 - V
∆VIG Input turn-on hysteresis - 0.3 - V
II(ON) Input turn-on current VIG = 3 V - - 100 µA
II(OFF) Input turn-off current VIG = 1.5 V 10 - - µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VSG Status clamping voltage IS= 100 µA 5.5 7 8.5 V
VSG Status low voltage IS= 100 µA--1V
Tmb = 25˚C - 0.7 0.8 V
ISStatus leakage current VSG = 5 V - - 15 µA
Tmb = 25˚C - 0.1 1 µA
ISStatus saturation current1VSG = 5 V 2 7 12 mA
Application information
RSExternal pull-up resistor - 47 - kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤Tmb ≤150˚C and typical is at Tmb = 25 ˚C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Open circuit detection 9 V ≤VBG ≤35 V
IL(TO) Low current detect threshold 0.24 - 1.6 A
Tj= 25˚C 0.4 0.8 1.2 A
∆IL(TO) Hysteresis - 0.16 - A
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
September 2001 4 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Undervoltage
VBG(UV) Low supply threshold voltage12 4.2 5.5 V
∆VBG(UV) Hysteresis - 0.5 - V
Overvoltage
VBG(OV) High supply threshold voltage240 45 50 V
∆VBG(OV) Hysteresis - 1 - V
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED LOAD
INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION
UV OV LC SC OT
L X X X X X OFF H off
H 0 0 0 0 0 ON H on & normal
H 0 0 1 0 0 ON L on & low current detect
H 1 0 X X X OFF H supply undervoltage lockout
H 0 1 X 0 0 OFF H supply overvoltage shutdown
H 0 0 0 1 X OFF L SC tripped
H 0 0 0 0 1 OFF L OT shutdown3
KEY TO ABBREVIATIONS
L logic low UV undervoltage
H logic high OV overvoltage
X don’t care LC low current or open circuit load
0 condition not present SC short circuit
1 condition present OT overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
September 2001 5 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤VBG ≤35 V, limits are at -40˚C ≤Tmb ≤150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection VBL = VBG
IL(lim) Load current limiting VBG ≥9 V 34 45 64 A
Short circuit load protection
VBL(TO) Battery load threshold voltage1VBG = 16 V 8 10 12 V
VBG = 35 V 15 20 25 V
td sc Response time2VBL > VBL(TO) - 180 250 µs
Overtemperature protection
Tj(TO) Threshold junction 150 170 190 ˚C
temperature3
∆Tj(TO) Hysteresis - 10 - ˚C
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL= 13 Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
During turn-on from input going high
td on Delay time to 10% VL-4060µs
dV/dton Rate of rise of load voltage 30% to 70% VL- 0.35 1 V/µs
t on Total switching time to 90% VL- 140 200 µs
During turn-off from input going low
td off Delay time to 90% VL-5580µs
dV/dtoff Rate of fall of load voltage 70% to 30% VL- 0.6 1 V/µs
t off Total switching time to 10% VL- 85 120 µs
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cig Input capacitance VBG = 13 V - 15 20 pF
Cbl Output capacitance VBL = 13 V - 250 350 pF
Csg Status capacitance VSG = 5 V - 11 15 pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has
operated, the input voltage must be toggled low for the switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
September 2001 6 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Typical on-state resistance, tp= 300 µs.
RON = f(Tj); parameter VBG; condition IL= 10 A
Fig.6. Typical on-state characteristics, Tj= 25 ˚C.
IL= f(Tj); parameter VBG; tp= 250 µs
Fig.7. Typical supply characteristics, 25 ˚C.
IG= f(VBG); parameter VIG
Fig.8. Typical on-state resistance,Tj= 25 ˚C.
RON = f(VBG); condition IL= 10 A; tp= 300 µs
Fig.9. Typical operating supply current.
IG= f(Tj); parameters IL, VBG; condition VIG = 5 V
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS IL
VBG
VIG VSG RS
VLG
LOAD
VBL
0
1
2
3
4
5
0 10203040506070
VBG / V
IBG(ON) / mA
OPERATING VIG = 5 V
CLAMPING
OVERVOLTAGE
SHUTDOWN
UNDERVOLTAGE
SHUTDOWN
QUIESCENT VIG = 0 V
0
20
40
60
80
-50 0 50 100 150 200
T
j
/
O
C
R
ON
/ mOhm
V
BG
= 6 V
9 V =< V
BG
=< 35 V
typ
.
R
ON
/ mOhm
20
22
24
26
28
30
32
34
36
38
40
1 10 100
V
BG
/ V
R
ON
max
0
10
20
30
40
50
012
V
BL
/ V
I
L
/ A
5
6
7
V
BG
/ V > = 8
0
0.5
1.0
1.5
2.0
2.5
3.0
-50 0 50 100 150 200
T
j
/
O
C
I
G
/ mA
lL > IL(TO)
V
BG
= 50 V
9 V <= V
BG
<= 35 V
typ.
l
L
= 0 A
l
L
> I
L(TO)
September 2001 7 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
Fig.10. Typical supply quiescent current.
IB= f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V
Fig.11. Typical off-state leakage current.
IL= f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.
Fig.12. Status leakage current.
IS= f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V
Fig.13. Low load current detection threshold.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG ≥9 V
Fig.14. Supply undervoltage thresholds.
VBG(UV) = f(Tj); conditions VIG = 5 V; VBL ≤2 V
Fig.15. Supply overvoltage thresholds.
VBG(OV) = f(Tj); conditions VIG = 5 V; IL= 100 mA
100E-12
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50 0 50 100 150 200
IB/ A
Tj/ OC
max.
typ.
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150 200
T
j
/
O
C
I
L(OC)
/ A
typ.
min.
max.
10E-12
00E-12
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50 0 50 100 150 200
Tj/ OC
IL/ A
max.
typ.
2.5
3.5
4.5
5.5
-50 0 50 100 150 200
T
j
/
O
C
V
BG(UV)
/ V
typ.
on
off
1E-9
10E-9
100E-9
1E-6
10E-6
100E-6
-50 0 50 100 150 200
Tj/ OC
IS/ A
max.
typ.
35
40
45
50
55
-50 0 50 100 150 200
Tj/ OC
VBG(OV) / V
max.
min.
off
on
September 2001 8 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
Fig.16. Typical status low characteristic.
VSG = f(Tj); conditions VBG ≥9 V, IS= 100 µA
Fig.17. Typical threshold voltage characteristic.
VIG = f(Tj); condition 9V ≤VBG ≤16V
Fig.18. Typical input clamping voltage.
VIG = f(Tj); condition II= 200µA, VBG = 13V
Fig.19. Typical status low characteristic, Tj= 25 ˚C.
IS= f(VSG); conditions VIG = 5V, VBG = 13V,IL= 0A
Fig.20. Typical status clamping voltage.
VSG = f(Tj); condition IS= 100µA, VBG = 13V
Fig.21. Typical status characteristic, Tj= 25 ˚C.
IS= f(VSG); conditions VIG = VBG = 0V
V
SG(LOW)
/ V
0
0.5
1
-50 0 50 100 150 200
T
j
/
O
C
I
S
/ mA
0
2
4
6
8
012345
V
SG
/ V
1.00
1.50
2.00
2.50
3.00
-50 0 50 100 150 200
T
j
/
O
C
V
IG
/ V
V
IG(ON)
V
IG(OFF)
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
7.50
-50 0 50 100 150 200
T
j
/
O
C
V
SG
/ V V
IG
/ V =
0
5
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
7.50
-50 0 50 100 150 200
T
j
/
O
C
V
IG
/ V
I
S
/ mA
0
5
10
15
20
0246810
V
SG
/ V
September 2001 9 Rev 1.000

Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
Fig.22. Typical battery to ground clamping voltage.
VBG = f(Tj); parameter IG
Fig.23. Typical battery to load clamping voltage.
VBL = f(Tj); parameter IL; condition IG= 10mA
Fig.24. Typical negative load clamping.
IL= f(VLG); conditions VIG = = 0V, Tj= 25˚C
Fig.25. Typical negative load clamping voltage.
VLG = f(Tj); parameter IL; condition VIG = = 0V
Fig.26. Typical reverse diode characteristic.
IL= f(VBL); conditions VIG = 0 V, Tj= 25 ˚C
Fig.27. Typical overload characteristic, Tmb = 25 ˚C.
IL= f(VBL); condition VBG = 16 V; parameter tp
50
55
60
65
-50 0 50 100 150 200
Tj/ OC
VBG / V
I
G
=
1 mA
200 mA
-30
-25
-20
-15
-10
-50 0 50 100 150 200
Tj/ OC
IL=
10 mA
10 A
VLG / V
50
55
60
65
-50 0 50 100 150 200
T
j
/
O
C
I
L
=
1 mA
600 mA
V
BL
/ V
IL/ A
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
VBL / V
I
L
/ A
0
5
10
-30 -25 -20 -15 -10
V
LG
/ V
I
L
/ A
0
5
10
15
20
25
30
35
40
45
50
02468101214161820
V
BL
/ V
Short circuit trip = 150us
V
BL(TO)
typ.
current limiting
September 2001 10 Rev 1.000