Renesas RYZ014A User manual

R19DS0111EU0102 Rev.1.02 Page 1 of 33
Mar.29.22
Datasheet
RYZ014A
LTE Category M1 Module
Description
The RYZ014A is a complete certified LTE Category M1 module including base-band, RF and memory, for
the design of connected machine-to-machine devices, and other Internet-of-Things devices with embedded
LTE connectivity. This document provides technical information about RYZ014A LGA module.
This document is intended for engineers who are developing User Equipment (UE) for LTE systems.
Functions
Renesas RYZ014A module includes Monarch SQN3330 Cat-M1 baseband, a complete dual band RF front
end, memory and required circuitry to meet 3GPP E-UTRA (Long Term Evolution - LTE, Release 13) Cat-M1
UE specifications.
For more information on the core technology specifications see the section References on page 32. The term
RYZ014A module refers to the hardware and the associated embedded software.
Figure 1. RYZ014A Block Diagram
Table 1 provides detail on general features of the RYZ014A.
Table 2 provides detail for the LTE-related features of the RYZ014. The module’s ECCN and part number
are detailed in the section ECCN and Part Number on page 14.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 2 of 33
Mar.29.22
Table 1. General Features
Feature
Description
General interfaces
•
JTAG
•I2C (reserved)
•USIM
•SPI (reserved)
•GPIO
•UART (x3, including one reserved)
•RING
•WAKE
•ADC
•
32 kHz
Supported Frequency Bands
1, 2, 3, 4, 5, 8, 12, 13, 14, 17, 18, 19, 20, 25, 26, 28, 66, 85
Operation voltages
Vbat1 (range from 3.1 V to 5.5 V) operational
Vbat1 (range from 3.1 V to 4.5 V) recommended for performance
Packaging
LGA module
108 pads (21.35 x 20.25 x 1.79 mm)
RoHS compliant, halogen-free
Operating temperature
RF compliant -30°C to +85°C (measured on board thermistor)
Operational: -40°C to +85°C (measured on board thermistor)
See also section Environmental Operating Conditions on page 16.
Humidity
•
10% to 85%
See also section Environmental Operating Conditions on page 16.
Table 2. LTE Features
Feature
Description
Standard
compliance
•3GPP E-UTRA Release 13 compliant
PHY
•One UL and one DL transceiver
•Support of HD-FDD Duplexing mode B
•Channel 1.4 MHz bandwidth
•Normal cyclic prefix
•Support of MPDCCH
•Modulation
DL: QPSK, 16QAM
UL: QPSK, 16QAM
•All coding schemes corresponding to modulations
•All channel coding (turbo-coding with interleaver, tail biting convolutional coding, block and
repetition coding) and CRC lengths
•SRS (Sounding Reference Signal)All power control schemes and DL power allocation
schemes
•HARQ Incremental Redundancy and Chase Combining
•Periodic and aperiodic CQI support
•
RSRP and RSRQ
MAC
•
Random Access procedure in CE levels 0 and 1
•Scheduling Request, Buffer Status Reporting, and Power Headroom Reporting
•Discontinuous reception (DRX, eDRX) with long and short cycles
•Fast scanning
•Hosted configuration
•IPv4, IPv6
•
Location based services (PoLTE)
RLC
•ARQ modes: UM, AM, and TM

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 3 of 33
Mar.29.22
Feature
Description
PDCP
•
Ciphering and deciphering: NULL, AES, SNOW 3G
•Integrity and protection: AES, SNOW 3G
RRC
•
MIB and new SIB1-BR
•Intra and inter-frequency cell reselection
•Intra-frequency connected mode mobility
•Up to 8 Data Radio Bearers supported
•Support of CE (Coverage Extension) Mode A
•
Extended Access Barring (EAB)
NAS and above
•UEPCOP (from 3GPP Release 12) Power Saving Mode
•SMS over SG
•LWM2M Client
Pin Description
Table 3. Pad Name and Function
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
1
GND
N/A
All GND pads shall be connected to
the same copper.
2 GPIO3/STATUS_LED In Reserved for future use. Do not
connect. status LED (STATUS_LED, OUT) in
option
3
1V8
O (power)
1.8 V reference voltage for IOs.
4
GNSS_VINB
N/A
Reserved, do not use. Do Not Connect
5
RESERVED/FFF_FFH
I/O
Reserved pad: it must be Pulled Up
and connected to a Test Point.
FFF_FFH: Active high by default (FFF:
Firmware From Flash). Firmware From
Host if driven low.
6 GPIO2/PS_STATUS I/O GPIO2: Reserved, no function.
PS_STATUS: High = modem active /
low = modem in low power modes.
Power Saving status of
the module: a high level
indicates that module is
in active mode. A low
level indicates that
module is in low power
modes (Sleep mode or
Deep Sleep mode) to
minimize power
consumption. This signal
can be used to inform a
host that the module
needs to be waken-up
with either RTS0, WAKE0
or WAKE1 signal before
sending data or
commands through one
of the UART interface.
7
GPIO19/CLK0
I/O
Reserved for future use. Do not
connect.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 4 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
8
GPIO27/CTS2
I/O
UART2/CTS (OUT). It is
recommended to pull-up this pad with
the application host processor supply
as this pad will become high
impedance when module is in low
power mode. If not used, it should be
connected to a Test Point (for debug).
CTS2 is active low.
9
3V0
O (power)
3.0 V power supply
10 GPIO28/RTS2 I/O UART2/RTS (IN). Host board shall
drive this signal. See Module
integration Guide for details.
RTS2 is active low.
11
3V0
O (power)
3.0 V power supply
12 SIM_RESETN O SIM card interface: reset output pin for
the SIM card
13
DNC
Do not
connect
Do not connect
14
SIM_CLK
O
SIM card interface: clock output pin for
the SIM card
15
DNC
Do not
connect
16
SIM_DETECT
I/O
SIM card presence indication (input).
GPIO in option.
Active high = SIM card inserted / low =
no SIM card inserted.
Note: It is recommended to use an
USIM connector with hardware
removal and insertion detection
capability, connected to SIM_DETECT
signal.
17
SIM_IO
I/O
SIM card bidirectional data
input/output (SIM card output must be
open-drain). A 4.7 kOhm pull-up
resistor on SIM_VCC is mandatory.
18 SIM_VCC O (power) SIM card supply voltage (1.8 V or
2.95V controlled by software).
ON when a SIM card is detected.
19
GNSS_TXD3
N/A
Reserved, do not use. Do Not Connect
20
GND
N/A
All GND pads shall be connected to
the same copper.
21
GNSS_RXD3
N/A
Reserved, do not use. Do Not Connect
22 GND N/A All GND pads shall be connected to
the same copper.
23
GNSS_BOOT0
N/A
Reserved, do not use. Do Not Connect
24
GND
N/A
All GND pads shall be connected to
the same copper.
25
GNSS_RSTN
N/A
Reserved, do not use. Do Not Connect
26
GND
N/A
All GND pads shall be connected to
the same copper.
27
GNSS_STDBY_OUT
N/A
Reserved, do not use. Do Not Connect

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 5 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
28
GND
N/A
All GND pads shall be connected to
the same copper.
29
GNSS_WAKEUP
N/A
Reserved, do not use. Do Not Connect
30 GND N/A All GND pads shall be connected to
the same copper.
31
GND
N/A
All GND pads shall be connected to
the same copper.
32
GND
N/A
All GND pads shall be connected to
the same copper.
33
GND
N/A
All GND pads shall be connected to
the same copper.
34
GND
N/A
All GND pads shall be connected to
the same copper.
35
GNSS_STDBYN
N/A
Reserved, do not use. Do Not Connect
or tie to low.
36
GNSS_GPIO28
N/A
Reserved, do not use. Do Not Connect
37
GNSS_GPIO1_PPSOUT
N/A
Reserved, do not use. Do Not Connect
38
GNSS_GPIO0/BLANKING
N/A
Reserved, do not use. Do Not Connect
39
RFDATA12
I/O
Reserved for future use. Do not
connect.
40
RFDATA16
I/O
Reserved for future use. Do not
connect.
41
RFDATA17
I/O
Reserved for future use. Do not
connect.
42 GND N/A All GND pads shall be connected to
the same copper.
43
GND
N/A
All GND pads shall be connected to
the same copper.
44
GNSS_ANT1
N/A
Reserved, do not use. Do Not Connect
45
GND
N/A
All GND pads shall be connected to
the same copper.
46 GND N/A All GND pads shall be connected to
the same copper.
47
RESETN
I
Module HW reset signal. This shall be
driven high (1V8).
Active low (check the datasheet for the
minimum duration).
48
JTAG_TDO
O
JTAG active
49
JTAG_TRSTN
I
Active low. JTAG active
50
JTAG_TMS
I
JTAG active
51
JTAG_TDI
I
JTAG active
52
JTAG_TCK
I
JTAG active
53
GND
N/A
All GND pads shall be connected to
the same copper.
54
LTE_ANT
Analog
LTE antenna
55
GND
N/A
All GND pads shall be connected to
the same copper.
56 RXD2 O UART2/RXD (OUT), if not used should
be connected to a Test Point.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 6 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
57
ADC
Analog
Analog Digital Converter
58
TXD2
I
UART2/TXD (IN), if not used should
be connected to a Test Point.
59 SPI_SDI I/O Reserved for future use. Do not
connect.
60
SPI_CSN
I/O
Reserved for future use. Do not
connect.
61
SPI_CLK
I/O
Reserved for future use. Do not
connect.
62
GND
N/A
All GND pads shall be connected to
the same copper.
63
GND
N/A
All GND pads shall be connected to
the same copper.
64
GND
N/A
All GND pads shall be connected to
the same copper.
65 GND N/A All GND pads shall be connected to
the same copper.
66
GND
N/A
All GND pads shall be connected to
the same copper.
67
SPI_SDO
I/O
Reserved for future use. Do not
connect.
68
GND
N/A
All GND pads shall be connected to
the same copper.
69
GND
N/A
All GND pads shall be connected to
the same copper.
70
GND
N/A
All GND pads shall be connected to
the same copper.
71 GND N/A All GND pads shall be connected to
the same copper.
72
GND
N/A
All GND pads shall be connected to
the same copper.
73
GND
N/A
All GND pads shall be connected to
the same copper.
74
GND
N/A
All GND pads shall be connected to
the same copper.
75
RTS0
I
UART0/RTS (IN).
Active low (wake-up function).
76
CTS0
O
UART0/CTS (OUT). It is
recommended to pull-up this pad with
the application host processor supply
as this pad will become high
impedance when module is in low
power mode.
CTS0 is active low.
77
TXD0
I
UART0/TXD (IN)
78
GPIO14/TXD1
I/O
UART1/TXD (IN); If not used should
be connected to a Test Point.
79
RXD0
O
UART0/RXD (OUT)
80
GPIO15/RXD1
I/O
UART1/RXD (OUT); If not used should
be connected to a Test Point.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 7 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
81
GPIO17/CTS1
I/O
GPIO17: Reserved, no function.
CTS1 active low. No Flow control by
default.
UART1/CTS (OUT)
82
GPIO38/CLK1
I/O
Reserved for future use. Do not
connect.
83
GPIO16/RTS1
I/O
GPIO16: Reserved, no function.
RTS1 active low (wake-up function).
No Flow control by default.
UART1/RTS (IN)
84
GPIO41/DTR0
I/O
Reserved for future use. Do not
connect.
85
GPIO39/DSR0
I/O
Reserved for future use. Do not
connect.
86
GND
N/A
All GND pads shall be connected to
the same copper.
87
GND
N/A
All GND pads shall be connected to
the same copper.
88
GPIO23/DCD0
I/O
Reserved for future use. Do not
connect.
89 GPIO25/RING0 I/O RING0 (OUT); it is recommended to
pull-up this pin with the application
host processor supply as it will
become high impedance when module
is in Deep Sleep mode.
RING0 is active low (from high to low).
90
GPIO40/EMGCY_SHDN
I/O
Reserved for future use. Do not
connect.
91 GPIO26/CLK2 I/O Reserved for future use. Do not
connect.
92
I2C_SDA
I/O
Reserved for future use. Do not
connect.
93
GPIO24
I/O
Reserved for future use. Do not
connect.
94
I2C_SCL
I/O
Reserved for future use. Do not
connect.
95
GPIO21
I/O
Reserved for future use. Do not
connect.
96
WAKE1
I/O
Reserved, no function.
Not set as a wake-up source by
default. Active high or low level during
100 µs depending on software.
Wake input (WAKE1).
Note: WAKE inputs are
detected on level
(configurable by software
to 0 or 1) that must last at
least 100 µs.
97
VCC1_PA
I (power)
Power supply for LTE RF front end;
2.9 V to 3.1 V.
98
VCC2_PA
I (power)
Power supply for LTE RF front end;
2.9 V to 3.1 V.
99 VCC2_PA I (power) Power supply for LTE RF front end;
2.9 V to 3.1 V.
100
GNSS_VCC1
N/A
Reserved, do not use. Do Not Connect
101
GNSS_VCC2
N/A
Reserved, do not use. Do Not Connect

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 8 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
102
GNSS_VCC3
N/A
Reserved, do not use. Do Not Connect
103
GPIO29/32KHZ_CLK_OUT
O
Reserved for future use. Do not
connect.
104 WAKE0 I Reserved, no function.
Not set as a wake-up source by
default. Active high or low level during
100 µs depending on software.
Wake input (WAKE0).
Note: WAKE inputs are
detected on level
(configurable by software
to 0 or 1) that must last at
least 100 µs.
105
GPIO42/SAR_DETECT
I/O
Reserved for future use. Do not
connect.
106 POWER_EN I Reserved, no function. Connect to a 470 kOhm
Pull Down when no used.
107
VBAT1
I (power)
Power supply for Baseband, voltage
level 3.1 V to 5.5 V (operational) or 4.5
V (recommended for performance)
108 VBAT1 I (power) Power supply for Baseband, voltage
level 3.1 V to 5.5 V (operational) or 4.5
V (recommended for performance)
T1-
T30
GND
N/A
T1 to T30 pads are used as both GND
and thermal drops.
T1 to T30 pads are used
as both GND and thermal
drops.
Table 4. Other Pad Properties
Pad#
Pad Name
IO
Power
Group
Pad Type
Drive
(mA)
Max
drive
strength
that will
be used
(mA)
Max
toggling
freq (all
modes)
(MHz)
State
@reset
1
GND
N/A
N/A
N/A
N/A
N/A
N/A
2
GPIO3/STATUS_LED
VBAT1
BIDIR_WAKE
N/A
N/A
N/A
In, HiZ
3
1V8
N/A
N/A
N/A
N/A
N/A
N/A
4
GNSS_VINB
N/A
N/A
N/A
N/A
N/A
N/A
5
RESERVED/FFF_FFH
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
6
GPIO2/PS_STATUS
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
7
GPIO19/CLK0
1V8
BIDIR
2
4
6.25
In, PU
8
GPIO27/CTS2
1V8
BIDIR
2
4
6.25
In, PU
9
3V0
N/A
N/A
N/A
N/A
N/A
N/A
10
GPIO28/RTS2
1V8
BIDIR
2
4
6.25
In, PU
11
3V0
N/A
N/A
N/A
N/A
N/A
N/A
12
SIM_RESETN
SIM_VC
C
BIDIR
2
4
1
In, HiZ
13
DNC
N/A
N/A
N/A
N/A
N/A
N/A
14
SIM_CLK
SIM_VC
C
BIDIR
2
4
1
In, PU
15
DNC
N/A
N/A
N/A
N/A
N/A
N/A
16
SIM_DETECT
VBAT1
BIDIR_WAKE
N/A
N/A
N/A
In, HiZ

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 9 of 33
Mar.29.22
Pad#
Pad Name
IO
Power
Group
Pad Type
Drive
(mA)
Max
drive
strength
that will
be used
(mA)
Max
toggling
freq (all
modes)
(MHz)
State
@reset
17
SIM_IO
SIM_VC
C
BIDIR
2
4
1
In, PU
18
SIM_VCC
VBAT1
Power
N/A
N/A
N/A
High-Z, PD
19
GNSS_TXD3
N/A
N/A
N/A
N/A
N/A
N/A
20
GND
N/A
N/A
N/A
N/A
N/A
N/A
21
GNSS_RXD3
N/A
N/A
N/A
N/A
N/A
N/A
22
GND
N/A
N/A
N/A
N/A
N/A
N/A
23
GNSS_BOOT0
N/A
N/A
N/A
N/A
N/A
N/A
24
GND
N/A
N/A
N/A
N/A
N/A
N/A
25
GNSS_RSTN
N/A
N/A
N/A
N/A
N/A
N/A
26
GND
N/A
N/A
N/A
N/A
N/A
N/A
27
GNSS_STDBY_OUT
N/A
N/A
N/A
N/A
N/A
N/A
28
GND
N/A
N/A
N/A
N/A
N/A
N/A
29
GNSS_WAKEUP
N/A
N/A
N/A
N/A
N/A
N/A
30
GND
N/A
N/A
N/A
N/A
N/A
N/A
31
GND
N/A
N/A
N/A
N/A
N/A
N/A
32
GND
N/A
N/A
N/A
N/A
N/A
N/A
33
GND
N/A
N/A
N/A
N/A
N/A
N/A
34
GND
N/A
N/A
N/A
N/A
N/A
N/A
35
GNSS_STDBYN
N/A
N/A
N/A
N/A
N/A
N/A
36
GNSS_GPIO28
N/A
N/A
N/A
N/A
N/A
N/A
37
GNSS_GPIO1_PPSOUT
N/A
N/A
N/A
N/A
N/A
N/A
38
GNSS_GPIO0/BLANKING
N/A
N/A
N/A
N/A
N/A
N/A
39
RFDATA12
N/A
N/A
N/A
N/A
N/A
N/A
40
RFDATA16
N/A
N/A
N/A
N/A
N/A
N/A
41
RFDATA17
N/A
N/A
N/A
N/A
N/A
N/A
42
GND
N/A
N/A
N/A
N/A
N/A
N/A
43
GND
N/A
N/A
N/A
N/A
N/A
N/A
44
GNSS_ANT1
N/A
N/A
N/A
N/A
N/A
N/A
45
GND
N/A
N/A
N/A
N/A
N/A
N/A
46
GND
N/A
N/A
N/A
N/A
N/A
N/A
47
RESETN
VBAT1
IN_PMU
N/A
N/A
0
In, HiZ
48
JTAG_TDO
1V8
BIDIR
12
12
5
Out
49
JTAG_TRSTN
1V8
IN
N/A
N/A
N/A
in, PD
50
JTAG_TMS
1V8
IN
N/A
N/A
5
In, PU
51
JTAG_TDI
1V8
IN
N/A
N/A
5
In, PU
52
JTAG_TCK
1V8
IN
N/A
N/A
10
In, PD
53
GND
N/A
N/A
N/A
N/A
N/A
N/A
54
LTE_ANT
N/A
N/A
N/A
N/A
N/A
N/A
55
GND
N/A
N/A
N/A
N/A
N/A
N/A
56
RXD2
1V8
BIDIR
2
4
6.25
In, PU
57
ADC
N/A
N/A
N/A
N/A
N/A
N/A
58
TXD2
1V8
BIDIR
2
4
6.25
In, PU
59
SPI_SDI
1V8
BIDIR
2
4
13
In, PU
60
SPI_CSN
1V8
BIDIR
2
4
13
In, PU
61
SPI_CLK
1V8
BIDIR
2
8
13
In, PU
62
GND
N/A
N/A
N/A
N/A
N/A
N/A

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 10 of 33
Mar.29.22
Pad#
Pad Name
IO
Power
Group
Pad Type
Drive
(mA)
Max
drive
strength
that will
be used
(mA)
Max
toggling
freq (all
modes)
(MHz)
State
@reset
63
GND
N/A
N/A
N/A
N/A
N/A
N/A
64
GND
N/A
N/A
N/A
N/A
N/A
N/A
65
GND
N/A
N/A
N/A
N/A
N/A
N/A
66
GND
N/A
N/A
N/A
N/A
N/A
N/A
67
SPI_SDO
1V8
BIDIR
2
4
13
In, PU
68
GND
N/A
N/A
N/A
N/A
N/A
N/A
69
GND
N/A
N/A
N/A
N/A
N/A
N/A
70
GND
N/A
N/A
N/A
N/A
N/A
N/A
71
GND
N/A
N/A
N/A
N/A
N/A
N/A
72
GND
N/A
N/A
N/A
N/A
N/A
N/A
73
GND
N/A
N/A
N/A
N/A
N/A
N/A
74
GND
N/A
N/A
N/A
N/A
N/A
N/A
75
RTS0
VBAT1
BIDIR_WAKE
N/A
N/A
N/A
In, HiZ
76
CTS0
1V8
BIDIR
2
4
6.25
In, PU
77
TXD0
1V8
BIDIR
2
4
6.25
In, PU
78
GPIO14/TXD1
1V8
BIDIR
2
4
6.25
In, PU
79
RXD0
1V8
BIDIR
2
4
6.25
In, PU
80
GPIO15/RXD1
1V8
BIDIR
2
4
6.25
In, PU
81
GPIO17/CTS1
1V8
BIDIR
2
4
6.25
In, PU
82
GPIO38/CLK1
1V8
BIDIR
2
4
6.25
In, PU
83
GPIO16/RTS1
VBAT1
BIDIR_WAKE
N/A
N/A
4
In, HiZ
84
GPIO41/DTR0
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
85
GPIO39/DSR0
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
86
GND
N/A
N/A
N/A
N/A
N/A
N/A
87
GND
N/A
N/A
N/A
N/A
N/A
N/A
88
GPIO23/DCD0
1V8
BIDIR
2
4
1
In, PU
89
GPIO25/RING0
VBAT1
BIDIR_WAKE
0
In, HiZ
90
GPIO40/EMGCY_SHDN
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
91
GPIO26/CLK2
1V8
BIDIR
2
4
6.25
In, PU
92
I2C_SDA
1V8
BIDIR
2
8
6.25
In, PU
93
GPIO24
1V8
BIDIR
2
4
1
In, PU
94
I2C_SCL
1V8
BIDIR
2
8
6.25
In, PU
95
GPIO21
1V8
BIDIR
2
4
13
In, PU
96
WAKE1
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
97
VCC1_PA
N/A
N/A
N/A
N/A
N/A
N/A
98
VCC2_PA
N/A
N/A
N/A
N/A
N/A
N/A
99
VCC2_PA
N/A
N/A
N/A
N/A
N/A
N/A
100
GNSS_VCC1
N/A
N/A
N/A
N/A
N/A
N/A
101
GNSS_VCC2
N/A
N/A
N/A
N/A
N/A
N/A
102
GNSS_VCC3
N/A
N/A
N/A
N/A
N/A
N/A
103
GPIO29/32KHZ_CLK_OUT
1V8
BIDIR
2
8
0.032
In, HiZ
104
WAKE0
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
105
GPIO42/SAR_DETECT
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
106
POWER_EN
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
107
VBAT1
N/A
N/A
N/A
N/A
N/A
N/A
108
VBAT1
N/A
N/A
N/A
N/A
N/A
N/A
T1-T30
GND
N/A
N/A
N/A
N/A
N/A
N/A