Renesas RYZ014A User manual

R19DS0111EU0102 Rev.1.02 Page 1 of 33
Mar.29.22
Datasheet
RYZ014A
LTE Category M1 Module
Description
The RYZ014A is a complete certified LTE Category M1 module including base-band, RF and memory, for
the design of connected machine-to-machine devices, and other Internet-of-Things devices with embedded
LTE connectivity. This document provides technical information about RYZ014A LGA module.
This document is intended for engineers who are developing User Equipment (UE) for LTE systems.
Functions
Renesas RYZ014A module includes Monarch SQN3330 Cat-M1 baseband, a complete dual band RF front
end, memory and required circuitry to meet 3GPP E-UTRA (Long Term Evolution - LTE, Release 13) Cat-M1
UE specifications.
For more information on the core technology specifications see the section References on page 32. The term
RYZ014A module refers to the hardware and the associated embedded software.
Figure 1. RYZ014A Block Diagram
Table 1 provides detail on general features of the RYZ014A.
Table 2 provides detail for the LTE-related features of the RYZ014. The module’s ECCN and part number
are detailed in the section ECCN and Part Number on page 14.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 2 of 33
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Table 1. General Features
Feature
Description
General interfaces
•
JTAG
•I2C (reserved)
•USIM
•SPI (reserved)
•GPIO
•UART (x3, including one reserved)
•RING
•WAKE
•ADC
•
32 kHz
Supported Frequency Bands
1, 2, 3, 4, 5, 8, 12, 13, 14, 17, 18, 19, 20, 25, 26, 28, 66, 85
Operation voltages
Vbat1 (range from 3.1 V to 5.5 V) operational
Vbat1 (range from 3.1 V to 4.5 V) recommended for performance
Packaging
LGA module
108 pads (21.35 x 20.25 x 1.79 mm)
RoHS compliant, halogen-free
Operating temperature
RF compliant -30°C to +85°C (measured on board thermistor)
Operational: -40°C to +85°C (measured on board thermistor)
See also section Environmental Operating Conditions on page 16.
Humidity
•
10% to 85%
See also section Environmental Operating Conditions on page 16.
Table 2. LTE Features
Feature
Description
Standard
compliance
•3GPP E-UTRA Release 13 compliant
PHY
•One UL and one DL transceiver
•Support of HD-FDD Duplexing mode B
•Channel 1.4 MHz bandwidth
•Normal cyclic prefix
•Support of MPDCCH
•Modulation
DL: QPSK, 16QAM
UL: QPSK, 16QAM
•All coding schemes corresponding to modulations
•All channel coding (turbo-coding with interleaver, tail biting convolutional coding, block and
repetition coding) and CRC lengths
•SRS (Sounding Reference Signal)All power control schemes and DL power allocation
schemes
•HARQ Incremental Redundancy and Chase Combining
•Periodic and aperiodic CQI support
•
RSRP and RSRQ
MAC
•
Random Access procedure in CE levels 0 and 1
•Scheduling Request, Buffer Status Reporting, and Power Headroom Reporting
•Discontinuous reception (DRX, eDRX) with long and short cycles
•Fast scanning
•Hosted configuration
•IPv4, IPv6
•
Location based services (PoLTE)
RLC
•ARQ modes: UM, AM, and TM

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 3 of 33
Mar.29.22
Feature
Description
PDCP
•
Ciphering and deciphering: NULL, AES, SNOW 3G
•Integrity and protection: AES, SNOW 3G
RRC
•
MIB and new SIB1-BR
•Intra and inter-frequency cell reselection
•Intra-frequency connected mode mobility
•Up to 8 Data Radio Bearers supported
•Support of CE (Coverage Extension) Mode A
•
Extended Access Barring (EAB)
NAS and above
•UEPCOP (from 3GPP Release 12) Power Saving Mode
•SMS over SG
•LWM2M Client
Pin Description
Table 3. Pad Name and Function
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
1
GND
N/A
All GND pads shall be connected to
the same copper.
2 GPIO3/STATUS_LED In Reserved for future use. Do not
connect. status LED (STATUS_LED, OUT) in
option
3
1V8
O (power)
1.8 V reference voltage for IOs.
4
GNSS_VINB
N/A
Reserved, do not use. Do Not Connect
5
RESERVED/FFF_FFH
I/O
Reserved pad: it must be Pulled Up
and connected to a Test Point.
FFF_FFH: Active high by default (FFF:
Firmware From Flash). Firmware From
Host if driven low.
6 GPIO2/PS_STATUS I/O GPIO2: Reserved, no function.
PS_STATUS: High = modem active /
low = modem in low power modes.
Power Saving status of
the module: a high level
indicates that module is
in active mode. A low
level indicates that
module is in low power
modes (Sleep mode or
Deep Sleep mode) to
minimize power
consumption. This signal
can be used to inform a
host that the module
needs to be waken-up
with either RTS0, WAKE0
or WAKE1 signal before
sending data or
commands through one
of the UART interface.
7
GPIO19/CLK0
I/O
Reserved for future use. Do not
connect.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 4 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
8
GPIO27/CTS2
I/O
UART2/CTS (OUT). It is
recommended to pull-up this pad with
the application host processor supply
as this pad will become high
impedance when module is in low
power mode. If not used, it should be
connected to a Test Point (for debug).
CTS2 is active low.
9
3V0
O (power)
3.0 V power supply
10 GPIO28/RTS2 I/O UART2/RTS (IN). Host board shall
drive this signal. See Module
integration Guide for details.
RTS2 is active low.
11
3V0
O (power)
3.0 V power supply
12 SIM_RESETN O SIM card interface: reset output pin for
the SIM card
13
DNC
Do not
connect
Do not connect
14
SIM_CLK
O
SIM card interface: clock output pin for
the SIM card
15
DNC
Do not
connect
16
SIM_DETECT
I/O
SIM card presence indication (input).
GPIO in option.
Active high = SIM card inserted / low =
no SIM card inserted.
Note: It is recommended to use an
USIM connector with hardware
removal and insertion detection
capability, connected to SIM_DETECT
signal.
17
SIM_IO
I/O
SIM card bidirectional data
input/output (SIM card output must be
open-drain). A 4.7 kOhm pull-up
resistor on SIM_VCC is mandatory.
18 SIM_VCC O (power) SIM card supply voltage (1.8 V or
2.95V controlled by software).
ON when a SIM card is detected.
19
GNSS_TXD3
N/A
Reserved, do not use. Do Not Connect
20
GND
N/A
All GND pads shall be connected to
the same copper.
21
GNSS_RXD3
N/A
Reserved, do not use. Do Not Connect
22 GND N/A All GND pads shall be connected to
the same copper.
23
GNSS_BOOT0
N/A
Reserved, do not use. Do Not Connect
24
GND
N/A
All GND pads shall be connected to
the same copper.
25
GNSS_RSTN
N/A
Reserved, do not use. Do Not Connect
26
GND
N/A
All GND pads shall be connected to
the same copper.
27
GNSS_STDBY_OUT
N/A
Reserved, do not use. Do Not Connect

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 5 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
28
GND
N/A
All GND pads shall be connected to
the same copper.
29
GNSS_WAKEUP
N/A
Reserved, do not use. Do Not Connect
30 GND N/A All GND pads shall be connected to
the same copper.
31
GND
N/A
All GND pads shall be connected to
the same copper.
32
GND
N/A
All GND pads shall be connected to
the same copper.
33
GND
N/A
All GND pads shall be connected to
the same copper.
34
GND
N/A
All GND pads shall be connected to
the same copper.
35
GNSS_STDBYN
N/A
Reserved, do not use. Do Not Connect
or tie to low.
36
GNSS_GPIO28
N/A
Reserved, do not use. Do Not Connect
37
GNSS_GPIO1_PPSOUT
N/A
Reserved, do not use. Do Not Connect
38
GNSS_GPIO0/BLANKING
N/A
Reserved, do not use. Do Not Connect
39
RFDATA12
I/O
Reserved for future use. Do not
connect.
40
RFDATA16
I/O
Reserved for future use. Do not
connect.
41
RFDATA17
I/O
Reserved for future use. Do not
connect.
42 GND N/A All GND pads shall be connected to
the same copper.
43
GND
N/A
All GND pads shall be connected to
the same copper.
44
GNSS_ANT1
N/A
Reserved, do not use. Do Not Connect
45
GND
N/A
All GND pads shall be connected to
the same copper.
46 GND N/A All GND pads shall be connected to
the same copper.
47
RESETN
I
Module HW reset signal. This shall be
driven high (1V8).
Active low (check the datasheet for the
minimum duration).
48
JTAG_TDO
O
JTAG active
49
JTAG_TRSTN
I
Active low. JTAG active
50
JTAG_TMS
I
JTAG active
51
JTAG_TDI
I
JTAG active
52
JTAG_TCK
I
JTAG active
53
GND
N/A
All GND pads shall be connected to
the same copper.
54
LTE_ANT
Analog
LTE antenna
55
GND
N/A
All GND pads shall be connected to
the same copper.
56 RXD2 O UART2/RXD (OUT), if not used should
be connected to a Test Point.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 6 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
57
ADC
Analog
Analog Digital Converter
58
TXD2
I
UART2/TXD (IN), if not used should
be connected to a Test Point.
59 SPI_SDI I/O Reserved for future use. Do not
connect.
60
SPI_CSN
I/O
Reserved for future use. Do not
connect.
61
SPI_CLK
I/O
Reserved for future use. Do not
connect.
62
GND
N/A
All GND pads shall be connected to
the same copper.
63
GND
N/A
All GND pads shall be connected to
the same copper.
64
GND
N/A
All GND pads shall be connected to
the same copper.
65 GND N/A All GND pads shall be connected to
the same copper.
66
GND
N/A
All GND pads shall be connected to
the same copper.
67
SPI_SDO
I/O
Reserved for future use. Do not
connect.
68
GND
N/A
All GND pads shall be connected to
the same copper.
69
GND
N/A
All GND pads shall be connected to
the same copper.
70
GND
N/A
All GND pads shall be connected to
the same copper.
71 GND N/A All GND pads shall be connected to
the same copper.
72
GND
N/A
All GND pads shall be connected to
the same copper.
73
GND
N/A
All GND pads shall be connected to
the same copper.
74
GND
N/A
All GND pads shall be connected to
the same copper.
75
RTS0
I
UART0/RTS (IN).
Active low (wake-up function).
76
CTS0
O
UART0/CTS (OUT). It is
recommended to pull-up this pad with
the application host processor supply
as this pad will become high
impedance when module is in low
power mode.
CTS0 is active low.
77
TXD0
I
UART0/TXD (IN)
78
GPIO14/TXD1
I/O
UART1/TXD (IN); If not used should
be connected to a Test Point.
79
RXD0
O
UART0/RXD (OUT)
80
GPIO15/RXD1
I/O
UART1/RXD (OUT); If not used should
be connected to a Test Point.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 7 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
81
GPIO17/CTS1
I/O
GPIO17: Reserved, no function.
CTS1 active low. No Flow control by
default.
UART1/CTS (OUT)
82
GPIO38/CLK1
I/O
Reserved for future use. Do not
connect.
83
GPIO16/RTS1
I/O
GPIO16: Reserved, no function.
RTS1 active low (wake-up function).
No Flow control by default.
UART1/RTS (IN)
84
GPIO41/DTR0
I/O
Reserved for future use. Do not
connect.
85
GPIO39/DSR0
I/O
Reserved for future use. Do not
connect.
86
GND
N/A
All GND pads shall be connected to
the same copper.
87
GND
N/A
All GND pads shall be connected to
the same copper.
88
GPIO23/DCD0
I/O
Reserved for future use. Do not
connect.
89 GPIO25/RING0 I/O RING0 (OUT); it is recommended to
pull-up this pin with the application
host processor supply as it will
become high impedance when module
is in Deep Sleep mode.
RING0 is active low (from high to low).
90
GPIO40/EMGCY_SHDN
I/O
Reserved for future use. Do not
connect.
91 GPIO26/CLK2 I/O Reserved for future use. Do not
connect.
92
I2C_SDA
I/O
Reserved for future use. Do not
connect.
93
GPIO24
I/O
Reserved for future use. Do not
connect.
94
I2C_SCL
I/O
Reserved for future use. Do not
connect.
95
GPIO21
I/O
Reserved for future use. Do not
connect.
96
WAKE1
I/O
Reserved, no function.
Not set as a wake-up source by
default. Active high or low level during
100 µs depending on software.
Wake input (WAKE1).
Note: WAKE inputs are
detected on level
(configurable by software
to 0 or 1) that must last at
least 100 µs.
97
VCC1_PA
I (power)
Power supply for LTE RF front end;
2.9 V to 3.1 V.
98
VCC2_PA
I (power)
Power supply for LTE RF front end;
2.9 V to 3.1 V.
99 VCC2_PA I (power) Power supply for LTE RF front end;
2.9 V to 3.1 V.
100
GNSS_VCC1
N/A
Reserved, do not use. Do Not Connect
101
GNSS_VCC2
N/A
Reserved, do not use. Do Not Connect

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 8 of 33
Mar.29.22
Pad#
Pad Name
Direction
Capability
Default Function Description
Alternate Function
Description
(Contact Renesas
Support Team for detail
on persistent AT
Commands availability)
102
GNSS_VCC3
N/A
Reserved, do not use. Do Not Connect
103
GPIO29/32KHZ_CLK_OUT
O
Reserved for future use. Do not
connect.
104 WAKE0 I Reserved, no function.
Not set as a wake-up source by
default. Active high or low level during
100 µs depending on software.
Wake input (WAKE0).
Note: WAKE inputs are
detected on level
(configurable by software
to 0 or 1) that must last at
least 100 µs.
105
GPIO42/SAR_DETECT
I/O
Reserved for future use. Do not
connect.
106 POWER_EN I Reserved, no function. Connect to a 470 kOhm
Pull Down when no used.
107
VBAT1
I (power)
Power supply for Baseband, voltage
level 3.1 V to 5.5 V (operational) or 4.5
V (recommended for performance)
108 VBAT1 I (power) Power supply for Baseband, voltage
level 3.1 V to 5.5 V (operational) or 4.5
V (recommended for performance)
T1-
T30
GND
N/A
T1 to T30 pads are used as both GND
and thermal drops.
T1 to T30 pads are used
as both GND and thermal
drops.
Table 4. Other Pad Properties
Pad#
Pad Name
IO
Power
Group
Pad Type
Drive
(mA)
Max
drive
strength
that will
be used
(mA)
Max
toggling
freq (all
modes)
(MHz)
State
@reset
1
GND
N/A
N/A
N/A
N/A
N/A
N/A
2
GPIO3/STATUS_LED
VBAT1
BIDIR_WAKE
N/A
N/A
N/A
In, HiZ
3
1V8
N/A
N/A
N/A
N/A
N/A
N/A
4
GNSS_VINB
N/A
N/A
N/A
N/A
N/A
N/A
5
RESERVED/FFF_FFH
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
6
GPIO2/PS_STATUS
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
7
GPIO19/CLK0
1V8
BIDIR
2
4
6.25
In, PU
8
GPIO27/CTS2
1V8
BIDIR
2
4
6.25
In, PU
9
3V0
N/A
N/A
N/A
N/A
N/A
N/A
10
GPIO28/RTS2
1V8
BIDIR
2
4
6.25
In, PU
11
3V0
N/A
N/A
N/A
N/A
N/A
N/A
12
SIM_RESETN
SIM_VC
C
BIDIR
2
4
1
In, HiZ
13
DNC
N/A
N/A
N/A
N/A
N/A
N/A
14
SIM_CLK
SIM_VC
C
BIDIR
2
4
1
In, PU
15
DNC
N/A
N/A
N/A
N/A
N/A
N/A
16
SIM_DETECT
VBAT1
BIDIR_WAKE
N/A
N/A
N/A
In, HiZ

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 9 of 33
Mar.29.22
Pad#
Pad Name
IO
Power
Group
Pad Type
Drive
(mA)
Max
drive
strength
that will
be used
(mA)
Max
toggling
freq (all
modes)
(MHz)
State
@reset
17
SIM_IO
SIM_VC
C
BIDIR
2
4
1
In, PU
18
SIM_VCC
VBAT1
Power
N/A
N/A
N/A
High-Z, PD
19
GNSS_TXD3
N/A
N/A
N/A
N/A
N/A
N/A
20
GND
N/A
N/A
N/A
N/A
N/A
N/A
21
GNSS_RXD3
N/A
N/A
N/A
N/A
N/A
N/A
22
GND
N/A
N/A
N/A
N/A
N/A
N/A
23
GNSS_BOOT0
N/A
N/A
N/A
N/A
N/A
N/A
24
GND
N/A
N/A
N/A
N/A
N/A
N/A
25
GNSS_RSTN
N/A
N/A
N/A
N/A
N/A
N/A
26
GND
N/A
N/A
N/A
N/A
N/A
N/A
27
GNSS_STDBY_OUT
N/A
N/A
N/A
N/A
N/A
N/A
28
GND
N/A
N/A
N/A
N/A
N/A
N/A
29
GNSS_WAKEUP
N/A
N/A
N/A
N/A
N/A
N/A
30
GND
N/A
N/A
N/A
N/A
N/A
N/A
31
GND
N/A
N/A
N/A
N/A
N/A
N/A
32
GND
N/A
N/A
N/A
N/A
N/A
N/A
33
GND
N/A
N/A
N/A
N/A
N/A
N/A
34
GND
N/A
N/A
N/A
N/A
N/A
N/A
35
GNSS_STDBYN
N/A
N/A
N/A
N/A
N/A
N/A
36
GNSS_GPIO28
N/A
N/A
N/A
N/A
N/A
N/A
37
GNSS_GPIO1_PPSOUT
N/A
N/A
N/A
N/A
N/A
N/A
38
GNSS_GPIO0/BLANKING
N/A
N/A
N/A
N/A
N/A
N/A
39
RFDATA12
N/A
N/A
N/A
N/A
N/A
N/A
40
RFDATA16
N/A
N/A
N/A
N/A
N/A
N/A
41
RFDATA17
N/A
N/A
N/A
N/A
N/A
N/A
42
GND
N/A
N/A
N/A
N/A
N/A
N/A
43
GND
N/A
N/A
N/A
N/A
N/A
N/A
44
GNSS_ANT1
N/A
N/A
N/A
N/A
N/A
N/A
45
GND
N/A
N/A
N/A
N/A
N/A
N/A
46
GND
N/A
N/A
N/A
N/A
N/A
N/A
47
RESETN
VBAT1
IN_PMU
N/A
N/A
0
In, HiZ
48
JTAG_TDO
1V8
BIDIR
12
12
5
Out
49
JTAG_TRSTN
1V8
IN
N/A
N/A
N/A
in, PD
50
JTAG_TMS
1V8
IN
N/A
N/A
5
In, PU
51
JTAG_TDI
1V8
IN
N/A
N/A
5
In, PU
52
JTAG_TCK
1V8
IN
N/A
N/A
10
In, PD
53
GND
N/A
N/A
N/A
N/A
N/A
N/A
54
LTE_ANT
N/A
N/A
N/A
N/A
N/A
N/A
55
GND
N/A
N/A
N/A
N/A
N/A
N/A
56
RXD2
1V8
BIDIR
2
4
6.25
In, PU
57
ADC
N/A
N/A
N/A
N/A
N/A
N/A
58
TXD2
1V8
BIDIR
2
4
6.25
In, PU
59
SPI_SDI
1V8
BIDIR
2
4
13
In, PU
60
SPI_CSN
1V8
BIDIR
2
4
13
In, PU
61
SPI_CLK
1V8
BIDIR
2
8
13
In, PU
62
GND
N/A
N/A
N/A
N/A
N/A
N/A

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 10 of 33
Mar.29.22
Pad#
Pad Name
IO
Power
Group
Pad Type
Drive
(mA)
Max
drive
strength
that will
be used
(mA)
Max
toggling
freq (all
modes)
(MHz)
State
@reset
63
GND
N/A
N/A
N/A
N/A
N/A
N/A
64
GND
N/A
N/A
N/A
N/A
N/A
N/A
65
GND
N/A
N/A
N/A
N/A
N/A
N/A
66
GND
N/A
N/A
N/A
N/A
N/A
N/A
67
SPI_SDO
1V8
BIDIR
2
4
13
In, PU
68
GND
N/A
N/A
N/A
N/A
N/A
N/A
69
GND
N/A
N/A
N/A
N/A
N/A
N/A
70
GND
N/A
N/A
N/A
N/A
N/A
N/A
71
GND
N/A
N/A
N/A
N/A
N/A
N/A
72
GND
N/A
N/A
N/A
N/A
N/A
N/A
73
GND
N/A
N/A
N/A
N/A
N/A
N/A
74
GND
N/A
N/A
N/A
N/A
N/A
N/A
75
RTS0
VBAT1
BIDIR_WAKE
N/A
N/A
N/A
In, HiZ
76
CTS0
1V8
BIDIR
2
4
6.25
In, PU
77
TXD0
1V8
BIDIR
2
4
6.25
In, PU
78
GPIO14/TXD1
1V8
BIDIR
2
4
6.25
In, PU
79
RXD0
1V8
BIDIR
2
4
6.25
In, PU
80
GPIO15/RXD1
1V8
BIDIR
2
4
6.25
In, PU
81
GPIO17/CTS1
1V8
BIDIR
2
4
6.25
In, PU
82
GPIO38/CLK1
1V8
BIDIR
2
4
6.25
In, PU
83
GPIO16/RTS1
VBAT1
BIDIR_WAKE
N/A
N/A
4
In, HiZ
84
GPIO41/DTR0
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
85
GPIO39/DSR0
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
86
GND
N/A
N/A
N/A
N/A
N/A
N/A
87
GND
N/A
N/A
N/A
N/A
N/A
N/A
88
GPIO23/DCD0
1V8
BIDIR
2
4
1
In, PU
89
GPIO25/RING0
VBAT1
BIDIR_WAKE
0
In, HiZ
90
GPIO40/EMGCY_SHDN
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
91
GPIO26/CLK2
1V8
BIDIR
2
4
6.25
In, PU
92
I2C_SDA
1V8
BIDIR
2
8
6.25
In, PU
93
GPIO24
1V8
BIDIR
2
4
1
In, PU
94
I2C_SCL
1V8
BIDIR
2
8
6.25
In, PU
95
GPIO21
1V8
BIDIR
2
4
13
In, PU
96
WAKE1
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
97
VCC1_PA
N/A
N/A
N/A
N/A
N/A
N/A
98
VCC2_PA
N/A
N/A
N/A
N/A
N/A
N/A
99
VCC2_PA
N/A
N/A
N/A
N/A
N/A
N/A
100
GNSS_VCC1
N/A
N/A
N/A
N/A
N/A
N/A
101
GNSS_VCC2
N/A
N/A
N/A
N/A
N/A
N/A
102
GNSS_VCC3
N/A
N/A
N/A
N/A
N/A
N/A
103
GPIO29/32KHZ_CLK_OUT
1V8
BIDIR
2
8
0.032
In, HiZ
104
WAKE0
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
105
GPIO42/SAR_DETECT
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
106
POWER_EN
VBAT1
BIDIR_WAKE
N/A
N/A
0
In, HiZ
107
VBAT1
N/A
N/A
N/A
N/A
N/A
N/A
108
VBAT1
N/A
N/A
N/A
N/A
N/A
N/A
T1-T30
GND
N/A
N/A
N/A
N/A
N/A
N/A

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 11 of 33
Mar.29.22
FCC Regulatory Approval
Attention
FCC-ID: 2AU6XRZ014A (single modular approval)
This above identified LTE radio module is not intended to be provided to end-users but is for installation by
OEM integrators only.
Installation/Integration
OEM integrators must follow Renesas’ installation instructions to provide for and benefit from FCC compliant
module integrations and must abide especially by the following:
The maximum antenna gain values (accounting for cable attenuation) to comply with the FCC maximum
ERP/EIRP limits and with RF Exposure rules:
•LTE band 2 (1800 MHz): 2.1 dBi
•LTE band 4 (1700 MHz): 2 dBi
•LTE band 5 (850 MHz): 0.2 dBi
•LTE band 12 (700 MHz): -2 dBi
•LTE band 13 (700 MHz): -2.4 dBi
•LTE band 25 (1900+ MHz): 2.1 dBi
The Renesas module integration guidelines must be closely followed.
Compliance of host integrations of the module is limited to hosts adaptation designs which are identical to
Renesas’ reference design.
Host integrations with adaption designs deviating from Renesas’ reference design require either class 2
permissive change to this modular approval or a separate host approval with different FCC-ID;
Host integrations with co-located (simultaneously operating) radio transmitters must be evaluated in
accordance with FCC multi-transmitter rules and may require either class 2 permissive change to this
modular approval or a separate host approval with different FCC-ID, dependent on the result of the
evaluation; Inquiry at FCC or a TCB is urgently recommended.
Integrations of the module into host products which are intended for portable use, i.e. less than 20cm
distance between its radiating structures (antenna) and the body of nearby persons, or which otherwise put
additional technical requirements like Hearing Aid compatibility require either class 2 permissive change to
this modular approval or a separate host approval with different FCC-ID;
Compliance with Unwanted Emission Limits for Digital Device
If the OEM host integration fully complies with the above described reference design and can completely
inherit and rest on compliance of the existing modular approval the OEM remains still responsible to show
compliance of the overall end-product with the FCC limits for unwanted conducted and radiated emissions
from the digital device (unintentional radio) portion of such end-product (commonly addressed as part 15B
compliance or similar).

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 12 of 33
Mar.29.22
End-product Labelling
•FCC-ID
The module's FCC-ID must either be visible from the exterior of the host product (e.g. per window) or per
electronic display, or shall be displayed on an additional exterior label per the following or similar string:
contains FCC-ID: 2AU6XRZ014A
•Digital Device - Unwanted Emissions Notice
If the end-product falls under part 15 of the FCC rules it shall display the following user notice on its
exterior acc. to part 15.19 (the notice may be printed in the manual in case the host is too small):
This device complies with Part 15 of the FCC Rules. Operation is subject to
the following two conditions:
(1) This device may not cause harmful interference, and
(2) This device must accept any interference received, including interference
that may cause undesired operation.
•Further Labelling Requirements may apply dependent on the FCC rule parts relevant to the host product.
•End-product User Instructions / Notices in the Manual
At a minimum, end-product users must be provided with the following notices at a prominent location of
the product literature furnished with the product:
Product Modifications
* Modifications not expressly approved by the party responsible for compliance could
void the user's authority to operate this equipment.
* RF Exposure Compliance
This equipment complies with FCC radio frequency radiation exposure rules and limits
set forth for an uncontrolled environment, when installed and operated with minimum
distance of 20cm between its radiating structures (antenna) and the body of nearby
persons and when not operated simultaneously with other nearby radio-transmitters.
•Maximum Antenna Gain
The user instructions of end-products equipped with standard external antenna connectors for the
modular radio transmitter providing the option to connect other antennae than those which may or may
not be bundled with the end-product must list the maximum allowed antenna gain values as derived from
those given above, accounting for the cable attenuations of the actual installation.
•Digital Device - Unwanted Emissions Notice
If the end-product is or contains a digital device (unintentional radio portions) and is not exempted by its
use case (like vehicular use) the following part 15.105 (b) user notice shall be provided at prominent
location of the product literature:
This equipment has been tested and found to comply with the limits for a
Class B digital device, pursuant to part 15 of the FCC rules. These limits
are designed to provide reasonable protection against harmful interference in
a residential installation. This equipment generates uses and can radiate
radio frequency energy and, if not installed and used in accordance with the
instructions, may cause harmful interference to radio communications.
However, there is no guarantee that interference will not occur in a
particular installation. If this equipment does cause harmful interference to
radio or television reception, which can be determined by turning the
equipment off and on, the user is encouraged to try to correct the
interference by one or more of the following measures: o Reorient or relocate
the receiving antenna. o Increase the separation between the equipment and
receiver. o Connect the equipment into an outlet on a circuit different from
that to which the receiver is connected. o Consult the dealer or an
experienced radio/TV technician for help
•Further User Notices
May be required dependent on the FCC rule parts relevant to the host product.
•Non-allowed User Instructions
The end-product user guidance may NOT include instructions about how to install or de-install the
module.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 13 of 33
Mar.29.22
Industry Canada Statement
This device complies with ISED’s licence exempt RSSs. Operation is subject to the following two conditions:
(1) This device may not cause harmful interference, and (2) this device must accept any interference
received, including interference that may cause undesired operation.
Le présent appareil est conforme aux CNR d’ ISED applicables aux appareils radio exempts de licence.
L’exploitation est autorisée aux deux conditions suivantes : (1) le dispositif ne doit pas produire de brouillage
préjudiciable, et (2) ce dispositif doit accepter tout brouillage reçu, y compris un brouillage susceptible de
provoquer un fonctionnement indésirable.
This device is intended only for OEM integrators under the following conditions: (For module device
use)
1) The antenna must be installed such that 20 cm is maintained between the antenna and users, and
2) The transmitter module may not be co located with an y other transmitter or antenna
As long as 2 conditions above are met , further transmitter test will not be required. However, the OEM
integrator is still responsible for testing their end product for any additional compliance requirements required
with this module installed.
Cet appareil est conçu uniquement pour les intégrateurs OEM dans les conditions suivantes: (Pour
utilisation de dispositif module)
1) L'antenne doit être installée de telle sorte qu'une distance de 20 cm est respectée entre l'antenne et les
utilisateurs, et
2) Le module émetteur peut ne pas être coïmp lanté av ec un autre émetteur ou antenne.
Tant que les 2 conditions ci dessus sont remplies, des essais supplémentaires sur l'émetteur ne seront pas
nécessaires. Toutefois, l'intégrateur OEM est toujours responsable des essais sur son produit final pour
toutes exigences de conformité supplémentaires requis pour ce module installé.
IMPORTANT NOTE:
In the event that these conditions can not be met (for example certain laptop configurations or colocation with
another transmitter), then the Canada authorization is no longer considered valid and the IC ID can not be
used on the final product. In these circumstances, the OEM integrator will be responsible for re evaluating
the end product (including the transmitter) and obtaining a separate Canada authorization.
NOTE IMPORTANTE:
Dans le cas où ces conditions ne peuvent être satisfaites (par exemple pour certaines configurations
d'ordinateur portable ou de certaines co localisation avec un autre émetteur), l'autorisation du Canada n'est
plus considéré comme valide et l'ID IC ne peut pas être utilisé sur le produit final. Dans ces circonstances,
l'intégrateur OEM sera chargé de réévaluer le produit final (y compris l'émetteur) et l'obtention d'une
autorisation distincte au Canada.
End Product Labeling
This transmitter module is authorized only for use in device where the antenna may be installed such that 20
cm may be maintained between the antenna and users. The final end product must be labeled in a visible
area with the following: "Contains IC: 20519-RZ014A".
Plaque signalétique du produit final
Ce module émetteur est autorisé uniquement pour une utilisation dans un dispositif où l'antenne peut être
installée de telle sorte qu'une distance de 20cm peut être maintenue entre l'antenne et les utilisateurs. Le
produit final doit être étiqueté dans un endroit visible avec l'inscription suivante:
"Contient des IC: 20519-RZ014A".
Manual Information to the End User
The OEM integrator has to be aware not to provide information to the end user regarding how to install or
remove this RF module in the user's manual of the end product which integrates this module.
The end user manual shall include all required regulatory information/warning as show in this manual.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 14 of 33
Mar.29.22
Manuel d'information à l'utilisateur final
L'intégrateur OEM doit être conscient de ne pas fournir des informations à l'utilisateur final quant à la façon
d'installer ou de supprimer ce module RF dans le manuel de l'utilisateur du produit final qui intègre ce
module.
Le manuel de l'utilisateur final doit inclure toutes les informations réglementaires requises et avertissements
comme indiqué dans ce manuel.
Japan radio/terminal equipment based on type certification
RYZ014A has obtained certified construction type certification (certification number: 003-200328).
Manufacturers of terminal equipment that incorporates the RYZ014A module must display the technical
suitability mark on the embedded terminal equipment. For the antenna used for certification, refer to RYZ014
Antenna List for Type Certification in Japan.
In addition, RYZ014A has certified the Telecommunications Business Law (certification number:
D200247003). Terminal devices with built-in modules need to be certified according to security standards.
Declaration of Conformity for EU RE Directive
Hereby, Renesas Electronics America Inc. declares that the radio equipment type RYZ014A is in compliance
with Directive 2014/53/EU.
The equipment must be powered by a PS1 source in compliance with the 62368-1 standard.
Physical Characteristics
ECCN and Part Number
The orderable part number of the RYZ014A module is RYZ014A000FZ00#HD0.
The ECCN of the RYZ014A module is 5A992.c. The HTS number is 8542.39.00.01.
The following comment from licensing officer is reported on the license information:
•This encryption item is described in paragraph B to note 3 (mass market note) of category 5 part 2. It is
authorized for export and reexport under section 740.17(B)(3) of the export administration regulations
(EAR).
Electrical Operating Conditions
Detailed Information
Table 5 describes the electrical operating conditions for RYZ014A.

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 15 of 33
Mar.29.22
Table 5. Electrical Operating Conditions
Parameter
Direction
Minimum
Typical
Maximum
VBAT1
In
3.1 V
5.5 V (operational)
4.5 V (performance)
SIM_VCC (1.8 V or 3.0 V) Out
1.62 V
1.8 V
1.98 V
2.7 V
3.0 V
3.3 V
1V8
See notes below.
Out
1.71 V
1.8 V
1.89 V
3V0
See note 2 below.
Out
2.85 V
3.0 V
3.15 V
VCC1_PA
In
2.85 V
3.0 V
3.3 V
VCC2_PA In 2.85 V 3.0 V 3.3 V
Note:1. The maximum current consumption allowed from the 1V8 reference pin is 100 mA.
2. Each output reference voltage (1V8, 3V0) can be either running or powered off depending on the internal
software configuration. They shall not be used to power external IC or parts that require permanent supply.
RYZ014A Power Tree
Figure 2provides a representation of the power tree of the RYZ014A. All current values are maximum RMS
current.
Figure 2. RYZ014A Power Tree

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 16 of 33
Mar.29.22
Power Supplies Environment
Figure 3 illustrates the connections between the RF front-end power supplies of the RYZ014A.
Figure 3. RYZ014A LTE RF Front-End Power Supplies Diagram
Environmental Operating Conditions
Temperature
•RF compliant: -30°C to +85°C (measured on board thermistor)
•Operational, with additional software to limit TxPower: -40°C to +85°C (measured on board thermistor)
•Storage: -40°C to +85°C
Humidity
•Operating: 10% to 85% (non-condensing)
•Storage: 5% to 85% (non-condensing)
Power Supply Dimensioning
Important: - Information provided here is measured peak current consumption for the RYZ014A Module
in various LTE Tx/Rx configurations, with and without the DC/DC losses. It represents the maximum RMS
current.
The power consumption depends on LTE band of operation. The figures in Table 6 are provided for LTE
Band 13 only. Please contact your Renesas representative for other LTE Bands figures.
Table 6. Measured Peak Current and Peak Power Consumption (LTE Band 13)
Parameter
Measured Peak Power
Consumption
Measured Battery Peak Current
(for VBAT1=4.2 V)
RRC Connected, 0dBm Tx, with UL and DL traffic
0.9 W
210 mA
RRC Connected, 10dBm Tx, with UL and DL traffic
1.1 W
250 mA
RRC Connected, 23dBm Tx, with UL and DL traffic
2.0 W
485 mA

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 17 of 33
Mar.29.22
I/O Characteristics
The voltage and current characteristics of the various IO pads of the RYZ014A versus IO bank supply
voltage are illustrated in the tables below.
Caution: Note that the Voh values in the tables below do not apply to GPIOs configured in open drain
mode. GPIOs can be individually configured in open drain mode. When in open drain mode they
either drive the line to Vol, or leave it floating, to be pulled up by an external pull-up resistance.
The PCB designer must ensure that the voltage on these pads never exceeds Vih of the IO group
to which they belong.
Refer to Table 4 to know the type of IO pad used on every termination.
•The Minimum values for Iol and Ioh should not be exceeded to guarantee that the logical levels are not
spoiled for each pad type.
•The Nominal values for Iol and Ioh represent the nominal values for the pad type. They are provided for
information only.
•The Maximum values for Iol and Ioh represent the maximal values for the pad type. They are provided for
information only.
•By default, during boot time, the pad defined as GPIO as default function, with BIDIR or BIDIR_WAKE
types, are configured as input, output disabled, with no internal pull-up and no internal pull-down.
Note: Please read Module Integration Guide for details on persistent AT Commands availability to change
these default behaviors.
Table 7. DC Characteristics for Digital IOs, Voltage 1.8 V - BIDIR and IN Types
Parameter
Drive Strength
Min.
Nom.
Max.
Unit
V
IL
Input Low Voltage
0
0.54
V
VIH
Input High Voltage
1.26
3.6
V
VOL
Output Low Voltage
0
0.45
V
VOH
Output High Voltage
1.35
1.8
V
V
T
Threshold Point
0.79
0.87
0.94
V
VT+
Schmitt Trigger Low to High Threshold Point
1
1.12
1.22
V
VT-
Schmitt Trigger High to Low Threshold Point
0.61
0.71
0.8
V
VT PU
Threshold Point with Pull-up Resistor Enabled
0.79
0.86
0.93
V
VT PD
Threshold Point with Pull-down Resistor Enabled
0.8
0.87
0.95
V
VT+ PU
Schmitt Trigger Low to High Threshold Point with Pull-up Resistor Enabled
1
1.12
1.21
V
V
T- PU
Schmitt Trigger High to Low Threshold Point with Pull-up Resistor Enabled
0.61
0.7
0.8
V
VT+ PD
Schmitt Trigger Low to High Threshold Point with Pull-down Resistor
Enabled
1.01
1.13
1.23
V
VT- PD
Schmitt Trigger High to Low Threshold Point with Pull-down Resistor
Enabled
0.62
0.72
0.81
V
II
Input Leakage Current @ VI=1.8V or 0V
±10
µA

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 18 of 33
Mar.29.22
Parameter
Drive Strength
Min.
Nom.
Max.
Unit
I
OZ
Tri-state Output Leakage Current @ VO=1.8V or 0V
±10
µA
Input Capacitance
3
pF
R
PU
Pull-up Resistor
56
89
148
kOhm
RPD
Pull-down Resistor
52
90
167
kOhm
IOL
Low Level Output Current at VOL(max)
2 mA
1.2
2.2
3.6
mA
4 mA
2.3
4.3
7.1
mA
8 mA
4.6
8.6
14.3
mA
IOH
High Level Output Current at VOH(max)
2 mA
1.0
2.4
4.6
mA
4 mA
2.0
4.7
9.2
mA
8 mA
4.0
9.4
18.4
mA
Table 8. DC Characteristics - IN_PMU Type
Parameter
Min.
Nom.
Max.
Unit
VIL
Input Low Voltage
0
0.27
V
VIH
Input High Voltage
1.56
3.6
V
Table 9. DC Characteristics - BIDIR_WAKE Type
Parameter
Min.
Nom.
Max.
Unit
VIL
Input Low Voltage
0
0.27
V
VIH
Input High Voltage.
1.56
3.6
V
VOL
Output Low Voltage
0
0.2
V
VOH
Output High Voltage
1.63
1.98
V
Auxiliary ADC
ADC specification is described in Table 10.
Table 10. ADC Specification
Performance
Specification
Description
Value
Unit
Min.
Typical
Max.
ADC voltage
range
0.1
1.8
V
ADC tolerance After calibration. The tolerance considered is
the highest value between the percentage
and the absolute voltage mentioned.
Highest of -
2% or -5 mV Higher of +2% or +5
mV
% or
mV
ADC resolution
Nominal resolution
10
bit
ADC input
capacitance
ADC input capacitance.
See the note below to prevent current
leakage in low-power mode.
2
pF
ADC input
resistance
ADC input resistance.
See the note below to prevent current
leakage in low-power mode.
1
MOhm

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 19 of 33
Mar.29.22
Important: If the ADC input is directly connected to an external device which doesn’t drive 0V when the
RYZ014A is in Sleeping Mode, then an external analog switch (such as FET) must be
connected to ADC input pin to prevent any current leakage in PMU sleeping state.
Performance
Table 11 presents the RYZ014A module’s performance in the supported LTE Bands.
Table 11. RF Sensitivity and Output Power
RYZ014A
Module Version
Typ. Sensitivity level (dBm) Bandwidth
1.4 MHz, 6 RB, MCS-5, BLER <5%
Conducted Power (dBm)
Bandwidth 1.4 MHz, 6 RB
RYZ014A000FZ00#HD0 ≤ -104 23 +1/-1.7
Component Reliability
Table 12. Reliability Test Results
Item
Test Conditions
Standard
Result
Preconditioning
a. Bake: 125°C / 24 hours
b. MSL3: 30°C/60% RH, 192 hours
c. Reflow 3 cycles @ Tp: 250 ±2°C
JESD22-A113
PASS
TC
(Shock) Temperature Cycling
Temperature Shock Cycling (TC)1000
cycles between -40°C and 85°C at an
average temperature change rate of
20°C/minute.
Maintain the highest and lowesttemperature
for 10 min. each.
JESD22-A104
PASS
THB
Temperature and Humidity
Bias
Temperature Humidity Bias Test
+85°C; 85% RH; Bias voltage 4.4V ± 0.1V;
Bias method: continuous bias;
Duration: 1000
hrs.
JESD22-A101 PASS
Environmental Low
Temperature
Low Temperature Storage test (-40°C,
96hrs)
IEC60068-2-1
PASS
Environmental High
Temperature
High Temperature Storage test (+85°C,
1000hrs)
IEC60068-2-2
PASS
LowTemperature Operating
Test -30°C; Bias voltage 12V on EVK and 4.5V DC_DC directly on module; Tx 50% and Rx
50%; 1000hrs.
N/A PASS
High Temperature Operating
Test
75°C; Bias voltage 12V on EVK and4.5V
DC_DC directly on module; Tx 50% and Rx
50%; 1000 hrs.
N/A
PASS
Mechanical Shock
Mechanical Shock (MS)
Half Sine, 500 m/s2, 11 ms, 6 shocks (1
shock for each ±axis)
DIN IEC 68-2-29
PASS
Drop 80cm
Drop Test
1. Height: 80cm,
2. concrete or steel
3. All surfaces and edges.
DIN IEC 68-2-31
ETS 300019-2-7
PASS
Vibration Vibration Test (Vib)
Sinusoidal, 10 ~ 500 Hz, 1.0 octave/min, 10
sweep cycles foreach axis
DIN IEC 68-2-6
EIA/TIA 571
§4.1.1.2
PASS
ESD
Contact discharge, discharge level:2KV,
4KV, 6KV, 8KV, 15KV.
IEC 61000-4-2 PASS

RYZ014A LTE Category M1 Module Datasheet
R19DS0111EU0102 Rev.1.02 Page 20 of 33
Mar.29.22
Item
Test Conditions
Standard
Result
3 samples for each discharge level.Conduct
the discharge tests on theupper cover and
all bottom pads ofthe samples.
up to 4kV
Temperature Cycle
10 temperature cycles from -40°C to +85°C;
3°C/min ramp Up & Down; High and Low
temperaturemaintained for 3 hrs each.
IEC 60068-2-14 PASS
Transportation Packaging
Drop
The whole case fall height: 76 cm free drop.
Directions: six surfaces,three edges and one
corner.
ASTM D5276 PASS
Transportation Vibration •Single container resonance: Use sine
wave to scan the resonance point in the
5 - 100Hz range (scan speed: 1.0
Octave/min). Vibrate at the resonance
frequency for 15 minafter finding the
resonance point.
•Repeated vertical motion vibration test:
Set the vibration table double amplitude
displacement to 25mm, and then start
from 2Hz, increase the test frequency
steadily, until parts of the sample
repeatedly jump of thetest platform.
ASTM D999,
Method B and
Method A1
PASS
Solderability
•
Procedure 1: Pre-condition(aging
conditions: by water vaper 93°C ± 3°C for
8 hrs ± 10 min and air dry atambient
temperature for a minimum of 15 min)
•Procedure 2: Temperature set-up
(wetting temperature: 245°C ± 5°C)
•Procedure 3: Flux immersion(flux
immersion time: 5 to 10 seconds)
•Procedure 4: Dipping the specimen
(wetting time: 5 sec ± 0.5sec; Solder pot:
96.5% Sn, 0.5% Cu,3.0% Ag)
•Procedure 5: Test start
J-STD-002D PASS
Package Description
Module Weight
The module weight is 2.08 g.