Samsung SGH-V100 User manual

SGH-V100
SERVICE
Manual
GSMTELEPHONECONTENTS
1.Specification
2.CircuitDescription
3.FlowChartofTroubleshooting
4.ExplodedViewsand PartsList
5.ElectricalPartsList
6.BlockDiagrams
7.PCB Diagrams
GSMTELEPHONE

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1.SGH-V100 Specification
1-1
GSM900
Phase1EGSM900 Phase2DCS1800 Phase1PCS1900
Freq.Band[MHz]
Uplink/Downlink 890~915 935~960 880~915 925~960 1710~1785 1805~1880 1850~1910 1930~1990
ARFCNrange1~124 0~124 &
975~1023 512~885 512~810
Tx/Rxspacing 45MHz45MHz95MHz80MHz
Mod.Bit rate/
Bit Period 270.833kbps 3.692us270.833kbps 3.692us270.833kbps 3.692us270.833kbps 3.692us
TimeSlot
Period/FramePeriod 576.9us 4.615ms576.9us 4.615ms576.9us 4.615ms576.9us 4.615ms
Modulation 0.3GMSK0.3GMSK0.3GMSK0.3GMSK
MS Power33dBm~13dBm33dBm~5dBm30dBm~0dBm30dBm~0dBm
PowerClass 5pcl~15pcl5pcl~19pcl0pcl~15pcl0pcl~15pcl
Sensitivity-102dBm-102dBm-100dBm-100dBm
TDMAMux 8 8 8 8
Cell Radius35Km35Km2Km-
1. GSMGeneralSpecification

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1-2
SGH-V100 Specification
TXPower
control levelGSM900
5 33±2 dBm
6 31±2 dBm
7 29±2 dBm
8 27±2 dBm
9 25±2 dBm
10 23±2 dBm
11 21±2 dBm
12 19±2 dBm
13 17±2 dBm
14 15±2 dBm
15 13±2 dBm
16 11±3 dBm
17 9±3dBm
18 7±3 dBm
19 5±3 dBm
TXPower
control levelDCS1800
0 30±3 dBm
1 28±3 dBm
2 26±3 dBm
3 24±3 dBm
4 22±3 dBm
5 20±3 dBm
6 18±3 dBm
7 16±3 dBm
8 14±3 dBm
9 12±4 dBm
10 10±4 dBm
11 8±4dBm
12 6±4 dBm
13 4±4 dBm
14 2±5 dBm
15 0±5 dBm
TXPower
control levelPCS1900
0 30±3 dBm
1 28±3 dBm
2 26±3 dBm
3 24±3 dBm
4 22±3 dBm
5 20±3 dBm
6 18±3 dBm
7 16±3 dBm
8 14±3 dBm
9 12±4 dBm
10 10±4 dBm
11 8±4dBm
12 6±4 dBm
13 4±4 dBm
14 2±5 dBm
15 0±5 dBm
2. GSMTXpower class

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2.SGH-V100 CircuitDescription
2-1
1.SGH-V100 RFCircuit Description
1)RXPART
1. ASM(F950)→Switching Tx, Rx pathforGSM900, DCS1800 and PCS1900 by logic controlling.
2. ASMControlLogic(U701, U702, U703)→TruthTable
VC1VC2VC3
GSMTxModeHL L
DCS/PCSTxModeLHL
PCSRxModeL L H
GSM/DCSRxModeLLL
3. SAWFILTER
ToconvertElectromagneticFieldWavetoAcoustic Wave and then pass thespecificfrequency band.
-PCS SAWFILTER(F951)
==> For filtering thefrequency band between 1930 and 1990MHz
4. TC-VCXO (U703)
To generatethe13MHzreference clockto drivethelogic and RF.
Afteradditionalprocess,thereference clockappliestotheU900 RxIQdemodulatorand TxIQmodulator.
Theoscillator forRXIQdemodulatorand Txmodulatorare controlledbyserialdatatoselectchanneland usefast lock
modeforGPRShigh class operation.
5. Si4200 (U901)
Thischipintegratesthree differential-inputLNAs.
TheGSMinputsupportstheE-GSM,DCSinputsupportstheDCS1800, PCSinputsupportsthePCS1900. TheLNA
inputsarematchedtothe200 ohmdifferentialoutputSAWfiltersthrough eternalLCmatching network.
Image-reject mixerdownconvertstheRFsignal toa100 KHzintermediatefrequency(IF)withtheRFLOfromSI4133T
frequencysynthesizer.TheRFLOfrequencyisbetween 1737.8 ~1989.9 MHz.
TheMixeroutput isamplifiedwithananalog programmablegainamplifier(PGA),whichiscontrolled by AGAIN.
ThequadratureIFsignal isdigitizedwith high resolution A/Dconverts(ADC).
6. Si4201 (U900)
TheSI4201 down-convertstheADCoutput to baseband withadigital100 KHzquadratureLOsignal.Digitaldecimation
and IIRfiltersperformchannelselection toremoveblocking and reference interface signals.
Afterchannelselection, thedigitaloutput is scaledwithadigitalPGA,whichiscontrolledwiththeDGAIN.DACsdrive
adifferentialanalog signalontotheRXIP,RXIN,RXQP,RXQN pinstointerface tostandardanalog-inputbaseband IC.

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2-2
SGH-V100 Circuit Description
2)TXPART
Baseband IQsignalfedinto offsetPLL,thisfunction isincludedinsideofU902 chip.
SI4200 chip generatesmodulatorsignalwhich powerlevel isabout1.5dBmand fedintoPowerAmplifier(U951).
ThePAoutputpowerand power ramping arewell controlledbyAuto
PowerControlcircuit.We useoffsetPLL below
Modulation Spectrum
200kHzoffset
30 kHzbandwidth
GSM-35dBc
DCS-35dBc
PCS-35dBc
400kHzoffset
30 kHzbandwidth
GSM-66dBc
DCS-65dBc
PCS-66dBc
600kHz~1.8MHzoffset
30 kHzbandwidth
GSM-75dBc
DCS-68dBc
PCS-75dBc
2. Baseband CircuitdescriptionofSGH-V100
1.PSC2006
1.1. PowerManagement
Sevenlow-dropoutregulatorsdesignedspecificallyforGSMapplicationspowertheterminaland helpensureoptimal
systemperformance and long batterylife.Aprogrammableboostconverterprovides supportfor1.8V, 3.0V,and 5.0V
SIMs,while a self-resetting, electronicallyfusedswitchsuppliespowertoexternalaccessories.Ancillarysupportfunctions,
suchasanLEDdriverand twocall-alertdrivers,aidinreducing both boardarea and systemcomplexity.
Athree-wireserial interface unit(SIU)providesaccess tocontroland configuration registers.Thisinterface givesa
microprocessor full controlofthePSC2006 and enables systemdesignerstomaximize bothstandby and talktimes.
Supervisoryfunctions.including aresetgenerator,aninputvoltagemonitor,and athermal monitor,supportreliablesystem
design. Thesefunctionsworktogethertoensurepropersystembehaviorduring start-up orinthe eventofafault
condition(lowmicroprocessorvoltage,insufficientbatteryenergy, orexcessivedietemperature).
1.2. BatteryChargeManagement
Abatterychargemanagementblock providesfast,efficientcharging ofasingle-cell Li-ion battery. Usedinconjunction
witha current-limited voltagesource and anexternalPMOSpass transistor,thisblocksafelyconditionsnear-deadcells
and providestheoption ofhaving fast-charge and top-off controlledinternally orby thesystem'smicroprocessor.
1.3. BacklightLED Driver
ThebacklightLEDdriverisalow-side, programmable currentsource designedtocontrol thebrightness ofthekeyboard
and LCDillumination. ThedriverisenabledbyEN_LED,and itscurrentsetting isdeterminedbyLED[0:2].Provided
EN_LEDis‘1’,thedrivercan beprogrammedtosink from12.5mAto 100mAin 12.5mAsteps.LED_DRVis
capableofsinking 100mAataworst-casemaximumoutputvoltageof0.6V.Forefficientuse,theLEDsisconnected
betweenthebatteryand theLED_DRVoutput.