Texas Instruments bq34210-Q1 Product manual

bq34210-Q1
Technical Reference Manual
Literature Number: SLUUBE8
September 2018

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Contents
Contents
Preface ........................................................................................................................................ 6
1 General Description.............................................................................................................. 7
1.1 Gas Gauging ................................................................................................................. 7
1.1.1 CEDV Gas Gauging Operational Overview ..................................................................... 8
1.1.2 Main Fuel Gauge Registers ....................................................................................... 8
1.1.3 Capacity Learning (FCC Update)................................................................................. 9
1.1.4 End-of-Discharge (EDV) Thresholds and Capacity Correction ............................................... 9
1.1.5 EDV Discharge Rate and Temperature Compensation...................................................... 10
1.1.6 EDV Age Factor ................................................................................................... 11
1.1.7 Self-Discharge..................................................................................................... 11
1.1.8 Battery Electronic Load Compensation......................................................................... 11
1.1.9 Initial Battery Capacity at Device Reset........................................................................ 12
1.1.10 Fuel Gauge Operating Modes.................................................................................. 12
1.1.11 CEDV Smoothing ................................................................................................ 13
1.2 Accumulated Charge Measurement ..................................................................................... 14
1.3 End-Of-Service Determination............................................................................................ 15
1.3.1 Alert Config Registers ............................................................................................ 16
1.3.2 Smoothing Config Register ...................................................................................... 21
1.3.3 End-Of-Service Determination—Detailed Description........................................................ 21
2 Functional Description........................................................................................................ 31
2.1 Device Configuration....................................................................................................... 31
2.1.1 Smoothing Config Register ...................................................................................... 31
2.1.2 Operation Configuration A (Operation Config A) Register................................................... 31
2.2 External Pin Functions..................................................................................................... 32
2.2.1 Wake-Up Comparator ............................................................................................ 32
2.2.2 Autocalibration..................................................................................................... 32
2.3 Temperature Measurement............................................................................................... 33
2.3.1 Overtemperature Indication...................................................................................... 33
2.3.2 Undertemperature Indication..................................................................................... 33
2.4 Battery Condition Warnings............................................................................................... 33
2.4.1 Battery Low Warning.............................................................................................. 33
2.4.2 Battery High Warning............................................................................................. 34
2.4.3 Battery Low SOC Warning....................................................................................... 34
2.4.4 Battery Level Threshold .......................................................................................... 34
2.5 Charging and Charge Termination Indication .......................................................................... 35
2.5.1 Detecting Charge Termination................................................................................... 35
2.5.2 Charge Inhibit...................................................................................................... 35
2.6 Power Modes ............................................................................................................... 35
2.6.1 NORMAL Mode.................................................................................................... 37
2.6.2 SLEEP Mode....................................................................................................... 37
2.6.3 SHUTDOWN Mode ............................................................................................... 37
2.7 CONFIG UPDATE Mode.................................................................................................. 37
2.8 Application-Specific Information.......................................................................................... 37
2.8.1 Battery Profile Storage and Selection .......................................................................... 37
2.8.2 First OCV Measurement.......................................................................................... 38

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2.9 Additional Data Memory Parameter Descriptions...................................................................... 38
2.9.1 Calibration ......................................................................................................... 38
2.9.2 Coulomb Counter Offset (CC Offset)........................................................................... 38
2.9.3 Board Offset ....................................................................................................... 38
2.9.4 Int Temp Offset ................................................................................................... 38
2.9.5 Ext Temp Offset .................................................................................................. 38
2.9.6 Pack VOffset ...................................................................................................... 38
2.9.7 Internal Temp Model ............................................................................................. 38
2.9.8 Ext a Coef and Ext b Coef ...................................................................................... 39
2.9.9 RC0 ................................................................................................................. 39
2.9.10 Filter................................................................................................................ 39
2.9.11 Deadband ........................................................................................................ 39
2.9.12 CC Deadband .................................................................................................... 39
2.9.13 SOC Flag Configuration A (SOC Flag Config A) Register ................................................. 39
2.9.14 SOC Flag Configuration B (SOC Flag Config B) Register ................................................. 40
2.9.15 CEDV Gauging Configuration (CEDV Config) Register .................................................... 41
2.9.16 EMF ............................................................................................................... 41
2.9.17 C0 ................................................................................................................. 41
2.9.18 R0 ................................................................................................................. 42
2.9.19 T0 .................................................................................................................. 42
2.9.20 R1 ................................................................................................................. 42
2.9.21 TC ................................................................................................................. 42
2.9.22 C1 ................................................................................................................. 42
2.9.23 Age Factor ........................................................................................................ 42
2.9.24 Fixed EDV0 ...................................................................................................... 42
2.9.25 Fixed EDV1 ...................................................................................................... 42
2.9.26 Fixed EDV2 ...................................................................................................... 42
2.9.27 Battery Low % ................................................................................................... 42
2.9.28 Learning Low Temp ............................................................................................. 42
2.9.29 Overload Current ................................................................................................ 42
2.9.30 Self Discharge Rate ............................................................................................. 42
2.9.31 Electronics Load ................................................................................................. 42
2.9.32 Near Full .......................................................................................................... 42
2.9.33 Reserve Capacity ................................................................................................ 43
2.9.34 Charge Efficiency (Chg Eff)..................................................................................... 43
2.9.35 Discharge Efficiency (Dsg Eff).................................................................................. 43
2.9.36 Depth of Discharge (DOD) at EDV2........................................................................... 43
2.9.37 Design Capacity ................................................................................................. 43
2.9.38 Design Voltage ................................................................................................... 43
2.9.39 Cycle Count % ................................................................................................... 43
2.9.40 Charge Inhibit Temp Low ....................................................................................... 43
2.9.41 Charge Inhibit Temp High ...................................................................................... 44
2.9.42 Temp Hys ......................................................................................................... 44
2.9.43 Charging and Charge Termination............................................................................. 44
2.9.44 Fast Charge Current ............................................................................................ 45
2.9.45 Charging Voltage ................................................................................................ 46
2.9.46 Taper Current..................................................................................................... 46
2.9.47 Taper Voltage..................................................................................................... 46
2.9.48 Sleep Current..................................................................................................... 46
2.9.49 Bus Low Time .................................................................................................... 46
2.9.50 Offset Calibration Inhibit Temperature Low................................................................... 46
2.9.51 Offset Calibration Inhibit Temperature High .................................................................. 46
2.9.52 Sleep Voltage Time.............................................................................................. 47

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2.9.53 Sleep Current Time .............................................................................................. 47
2.9.54 Dsg Current Threshold (Discharge Detection Threshold) .................................................. 47
2.9.55 Chg Current Threshold (Charge Detection Threshold)...................................................... 47
2.9.56 Quit Current ...................................................................................................... 47
2.9.57 Discharge Relax Time .......................................................................................... 47
2.9.58 Charge Relax Time .............................................................................................. 47
2.9.59 Quit Relax Time ................................................................................................. 47
2.9.60 OT Charge ........................................................................................................ 47
2.9.61 OT Chg Recovery ............................................................................................... 48
2.9.62 OT Discharge..................................................................................................... 48
2.9.63 OT Dsg Recovery ............................................................................................... 48
3 Communications ............................................................................................................... 49
3.1 I2C Interface................................................................................................................. 49
3.2 I2C Time Out ................................................................................................................ 49
3.3 I2C Command Waiting Time .............................................................................................. 50
3.4 I2C Clock Stretching........................................................................................................ 50
4 Data Commands................................................................................................................. 51
4.1 Control()/CONTROL_STATUS(): 0x00 and 0x01...................................................................... 52
4.1.1 CONTROL_STATUS: 0x0000................................................................................... 53
4.1.2 DEVICE_NUMBER: 0x0001 ..................................................................................... 54
4.1.3 FW_VERSION: 0x0002........................................................................................... 54
4.1.4 BOARD_OFFSET: 0x0009....................................................................................... 54
4.1.5 CC_OFFSET: 0x000A............................................................................................ 54
4.1.6 CC_OFFSET_SAVE: 0x000B ................................................................................... 54
4.1.7 SET_PROFILE_1: 0x0015 ...................................................................................... 54
4.1.8 SET_PROFILE_2: 0x0016 ...................................................................................... 54
4.1.9 SHUTDOWN_ENABLE: 0x001B................................................................................ 54
4.1.10 SHUTDOWN: 0x001C........................................................................................... 54
4.1.11 ACCUM_DSG_EN: 0x001E .................................................................................... 54
4.1.12 ACCUM_CHG_EN: 0x001F .................................................................................... 54
4.1.13 IGNORE_SELFDSG_EN: 0x0020 ............................................................................ 55
4.1.14 PIN_CONTROL_EN: 0x0022................................................................................... 55
4.1.15 CAL_TOGGLE: 0x002D......................................................................................... 55
4.1.16 SEAL: 0x0030 .................................................................................................... 55
4.1.17 EOS_START_LEARN: 0x0039................................................................................. 55
4.1.18 EOS_ABORT_LEARN: 0x003A................................................................................ 55
4.1.19 EOS_RCELL_RRATE_LEARN: 0x003B...................................................................... 55
4.1.20 EOS_WARN_CLEAR: 0x003C................................................................................. 55
4.1.21 EOS_INITIAL_RCELL: 0x003E ................................................................................ 55
4.1.22 EOS_INITIAL_RRATE: 0x003F ................................................................................ 55
4.1.23 RESET: 0x0041 .................................................................................................. 55
4.1.24 ACCUM_RESET: 0x004B....................................................................................... 55
4.1.25 GAUGING_STATUS: 0x0056 .................................................................................. 56
4.1.26 ManufacturingStatus(): 0x57.................................................................................... 56
4.1.27 ALERT_SET: 0x0068............................................................................................ 57
4.1.28 ALERT_RESET: 0x0069........................................................................................ 57
4.1.29 EDV_Threshold: 0x0073 ........................................................................................ 57
4.1.30 EXIT_ CAL: 0x0080.............................................................................................. 57
4.1.31 ENTER_CAL: 0x0081 ........................................................................................... 57
4.1.32 ENTER_CFG_UPDATE: 0x0090............................................................................... 57
4.1.33 EXIT_CFG_UPDATE_REINIT: 0x0091 ....................................................................... 57
4.1.34 EXIT_CFG_UPDATE: 0x0092.................................................................................. 57
4.2 Temperature(): 0x06 and 0x07 ........................................................................................... 57

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4.3 Voltage(): 0x08 and 0x09 ................................................................................................. 58
4.4 BatteryStatus(): 0x0A and 0x0B.......................................................................................... 58
4.5 Current(): 0x0C and 0x0D................................................................................................. 58
4.6 RemainingCapacity(): 0x10 and 0x11 ................................................................................... 58
4.7 FullChargeCapacity(): 0x12 and 0x13................................................................................... 58
4.8 AverageCurrent(): 0x14 and 0x15........................................................................................ 59
4.9 AverageTimeToEmpty(): 0x16 and 0x17................................................................................ 59
4.10 AverageTimeToFull(): 0x18 and 0x19................................................................................... 59
4.11 AccumulatedCharge(): 0x1A and 0x1B.................................................................................. 59
4.12 AccumulatedChargeTime(): 0x1C and 0x1D ........................................................................... 59
4.13 LastAccumulatedCharge(): 0x1E and 0x1F............................................................................. 59
4.14 LastAccumulatedChargeTime(): 0x20 and 0x21....................................................................... 60
4.15 AveragePower(): 0x24 and 0x25......................................................................................... 60
4.16 InternalTemperature(): 0x28 and 0x29 .................................................................................. 60
4.17 CycleCount(): 0x2A and 0x2B............................................................................................ 60
4.18 RelativeStateOfCharge(): 0x2C and 0x2D.............................................................................. 60
4.19 StateOfHealth(): 0x2E and 0x2F ......................................................................................... 60
4.20 ChargingVoltage(): 0x30 and 0x31 ...................................................................................... 60
4.21 ChargingCurrent(): 0x32 and 0x33....................................................................................... 60
4.22 BLTDischargeSet(): 0x34 and 0x35 ..................................................................................... 60
4.23 BLTChargeSet(): 0x36 and 0x37......................................................................................... 60
4.24 OperationStatus(): 0x3A and 0x3B ...................................................................................... 61
4.25 DesignCapacity(): 0x3C and 0x3D....................................................................................... 61
4.26 ManufacturerAccessControl(): 0x3E and 0x3F......................................................................... 61
4.27 MACData(): 0x40 through 0x5F .......................................................................................... 61
4.28 MACDataSum(): 0x60 ..................................................................................................... 61
4.29 MACDataLen(): 0x61 ...................................................................................................... 62
4.30 EOSLearnStatus(): 0x64 and 0x65 ...................................................................................... 62
4.31 EOSSafetySatus(): 0x66 and 0x67 ...................................................................................... 64
4.32 EOSStatus(): 0x68 ......................................................................................................... 65
4.33 AnalogCount(): 0x79....................................................................................................... 66
4.34 RawCurrent(): 0x7A and 0x7B............................................................................................ 66
4.35 RawVoltage(): 0x7C and 0x7D ........................................................................................... 66
4.36 RawIntTemp(): 0x7E and 0x7F........................................................................................... 66
4.37 RawExtTemp(): 0x80 and 0x81 .......................................................................................... 66
5 Data Memory Interface ........................................................................................................ 67
5.1 Accessing the Data Memory.............................................................................................. 67
5.2 Device Access Modes ..................................................................................................... 67
5.3 Sealing and Unsealing Data Memory Access.......................................................................... 67
6 Data Memory Summary....................................................................................................... 68
7 Application Example........................................................................................................... 81
7.1 Data Memory Parameter Update Example ............................................................................. 81
7.2 GAUGEPARCAL ........................................................................................................... 82
Revision History.......................................................................................................................... 83

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Preface
Read This First
SLUUBE8–September 2018
Preface
This manual discusses the modules and peripherals of the automotive-qualified AEC-Q100, Grade 3
bq34210-Q1 fuel gauge, and how each is used to build a complete battery pack fuel gauge solution. For
further information, refer to the bq34210-Q1 Automotive 1-Series Cell System-Side CEDV Fuel Gauge for
Rarely Discharged Batteries Data Sheet (SLUSCG1).
Formatting in This Document
The following formatting convention is used in this document:
• SBS commands: italics with parentheses and no breaking spaces; for example, RemainingCapacity()
• Data memory: italics,bold, and breaking spaces; for example, Design Capacity
• Register bits and flags: italics and brackets; for example, [TDA]
• Data memory bits: italics and bold; for example, [LED1]
• Modes and states: ALL CAPITALS; for example, UNSEALED
Trademarks
MathCAD is a trademark of MathSoft, Inc.
All other trademarks are the property of their respective owners.
Glossary
http://www.ti.com provides a Battery Glossary on the Battery Management FAQ page and the TI Glossary.
Related Documentation from Texas Instruments
To obtain a copy of any of the following TI documents, click on the links below:
1. bq34210-Q1 Automotive 1-Series Cell System-Side CEDV Fuel Gauge for Rarely Discharged Batteries
Data Sheet (SLUSCG1)
2. Going to Production with the bq275xx Application Report (SLUA449)
3. Host System Calibration Method Application Report (SLUA640)
For more documentation and product information, go to the bq34210-Q1 product page or to the TI Web
site at www.ti.com.

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General Description
Chapter 1
SLUUBE8–September 2018
General Description
The bq34210-Q1 fuel gauge incorporates gas gauging and an End-of-Service (EOS) Determination
function to use with a 1-series Li-Ion or Lithium Iron Phosphate (LiFePO4) rechargeable cell or a Nickel
metal hydride (NiMH) based pack with a configuration of 3-series cells.
The gas gauge uses Compensated End-of-Discharge Voltage (CEDV) gauging technology to accurately
predict the battery capacity and other operational characteristics of the battery. It can be interrogated by a
system processor to provide cell information, such as remaining capacity, full charge capacity (FCC), time-
to-empty (TTE), and relative state-of-charge (RSOC), and provide an interrupt signal to the processor.
The integrated EOS Determination function is specifically intended for applications where the battery is
rarely discharged, such as eCall systems, uninterruptible power supplies (UPS), enterprise server backup
systems, and telematics or telecommunications backup modules. In such systems, the battery may remain
in a fully (or near fully) charged state for much of its lifetime, with it rarely or never undergoing a significant
discharge. If the health of the battery in such a system is not monitored regularly, then it may degrade
beyond the level required for a system backup/discharge event, and thus fail precisely at the time when it
is needed most. Monitoring the battery enables the system to take action before the failure occurs.
The EOS Determination function monitors the health of the battery by using infrequent learning phases,
which involve a controlled discharge of ~1% capacity, and provides an alert to the system when the
battery is approaching the end of its usable service. By coordinating battery charging with the learning
phases, the battery capacity available to the system can be maintained above a preselected level to avoid
compromising the ability for the battery to support a system discharge event.
Information is accessed through a series of commands, called Data Commands, and indicated by the
general format Command(). Read and write information within the device control and status registers, as
well as its data memory locations are accessed through these commands. Commands are sent from the
system to the gauge using the I2C serial communications engine, and can be run during application
development, system manufacturing, or end-equipment operation.
The fuel gauge measures charge and discharge activity by monitoring the voltage across a small-value
series sense resistor (5 mΩto 20 mΩ, typical), which may be used in a low-side (at the CELL- connection)
or a high-side (at the CELL+ connection) configuration.
The external temperature sensing is optimized with the use of a high-accuracy negative temperature
coefficient (NTC) thermistor with 25°C resistance (R25) = 10.0 kΩ±1% and beta value (B25/85, resistance
at 25°C and at 85°C) = 3435 kΩ± 1% (such as Semitec NTC 103AT). Alternatively, the fuel gauge can be
configured to use its internal temperature sensor or receive temperature data from the host processor.
The fuel gauge uses temperature to monitor the battery-pack environment, which is used for gas gauging
and cell protection functionality.
To minimize power consumption, the fuel gauge has several power modes: INITIALIZATION, NORMAL,
SLEEP, and SHUTDOWN. The fuel gauge passes automatically between these modes (except for
SHUTDOWN exit, which needs an external stimulus), depending upon the occurrence of specific events,
though a system processor can initiate some of these modes directly. The device also includes a CONFIG
UPDATE mode, which is generally used during initial setup to update various RAM-based parameters
used by the gauge.
1.1 Gas Gauging
The bq34210-Q1 device features the Compensated End-of-Discharge Voltage (CEDV) gauging algorithm,
capable of gauging a maximum capacity of 32 Ah.
Figure 1-1 shows the operational overview of the bq34210-Q1 fuel gauge.

Charge
Efficiency
Compensation
Charge
Current
+
Inputs
Remaining
Capacity
(RC)
Discharge
Current
Temperature
Compensation
Self-Discharge
Timer
– –
≤
+
Full
Charge
Capacity
(FCC)
Discharge
Count
Register
(DCR)
Qualified
Transfer
Temperature, Other Data
Main Counters and
Capacity Reference (FCC)
Outputs
Chip-Controlled
Available Charge
LED Display
Two-Wire
Serial Port
– ++
Battery Electronics
Load Estimate
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General Description
Figure 1-1. bq34210-Q1 CEDV Gas Gauging Operational Overview
1.1.1 CEDV Gas Gauging Operational Overview
The bq34210-Q1 device accumulates the measured quantities of charge and discharge and estimates
self-discharge of the battery. The bq34210-Q1 device compensates the charge current measurement for
temperature and the state-of-charge of the battery. The device also adjusts the self-discharge estimation
based on temperature. The initial battery state-of-charge estimation on first insertion of the battery pack in
the system may display a factor of the true value; the system must go through a full charge and then a full
discharge cycle before the correct full-charge capacity (FCC) is estimated.
The main charge counter, RemainingCapacity() (RC) register, represents the available capacity or energy
in the battery at any given time. The bq34210-Q1 device adjusts RC for charge, self-discharge, and other
compensation factors. The information in the RC register is accessible through the I2C interface. The
FullChargeCapacity() (FCC) register represents the initial or last measured full discharge of the battery. It
is used as the battery full-charge reference for relative capacity indication. FCC is accessible through the
I2C interface.
1.1.2 Main Fuel Gauge Registers
Remaining Capacity (RC) — Remaining capacity in the battery
RC represents the remaining capacity in the battery. The bq34210-Q1 device computes RC in units
of mAh.
RC counts up during charge to a maximum value of FCC and down during discharge and self-
discharge to a minimum of 0. In addition to charge and self-discharge compensation, the bq34210-
Q1 device calibrates RC at three low-battery-voltage thresholds, EDV2, EDV1, and EDV0. This
provides a voltage-based calibration to the RC counter.
Design Capacity (DC) — User-specified battery full capacity

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General Description
DC is the user-specified battery full capacity. It is calculated from Design Capacity mAh and is
represented in units of mAh. It also represents the full-battery reference for the absolute display
mode.
Full Charge Capacity (FCC) — Last measured discharge capacity of the battery
FCC is the last measured discharge capacity of the battery. It is represented in units of mAh. On
initialization, the bq34210-Q1 device sets FullChargeCapacity() to the data memory value stored in
Full Charge Capacity (FCC). During subsequent discharges, the bq34210-Q1 device updates
FullChargeCapacity() with the last measured discharge capacity of the battery. Once updated, the
bq34210-Q1 device writes the new FullChargeCapacity() value to data memory in mAh to Learned
Full Charge Capacity.FullChargeCapacity() represents the full battery reference for the relative
display mode and relative state-of-charge calculations.
1.1.3 Capacity Learning (FCC Update)
An FCC update occurs if the battery discharges from RC ≥FCC –Near Full to the EDV2 voltage
threshold with the following conditions:
• No valid charge activity occurs during the discharge period. A valid charge is defined as a charge of
10 mAh into the battery.
• No more than 256 mAh of self-discharge or battery load estimation occurs during the discharge period.
• The temperature does not drop below the low temperature thresholds programmed in Low Temp
during the discharge period.
• The battery voltage reaches the EDV2 threshold during the discharge period and the voltage is greater
than or equal to the EDV2 threshold minus 256 mV when the bq34210-Q1 device detected EDV2.
• Current remains ≥3C/32 when EDV2 is reached.
• No overload condition exists when EDV2 threshold is reached or if RC has dropped to
Battery Low % × FCC.
The bq34210-Q1 device sets [VDQ] = 1 in OperationStatus() when a discharge begins. The bq34210-Q1
device sets [VDQ] = 0 if any disqualifying condition occurs. One complication may arise regarding the
state of [VDQ] if [CSYNC] is set in CEDV Gauging Configuration. When [CSYNC] is enabled,
RemainingCapacity() is written to equal FullChargeCapacity() on valid primary charge termination. This
capacity synchronization is done even if the condition RC ≥FCC –Near Full is not satisfied at charge
termination.
FCC cannot be reduced by more than 256 mAh or increased by more than 512 mAh during any single
update cycle. If [FCC_LIMIT] is set in CEDV Gauging Configuration, then FCC cannot learn above the
Design Capacity mAh. The bq34210-Q1 device saves the new FCC value to the data memory within 4 s
of being updated.
1.1.4 End-of-Discharge (EDV) Thresholds and Capacity Correction
The bq34210-Q1 device monitors the battery for three low-voltage thresholds: EDV0, EDV1, and EDV2.
If the [EDV_CMP] bit in CEDV Gauging Configuration is clear, fixed EDV thresholds may be
programmed in Fixed EDV0,Fixed EDV1, and Fixed EDV2 in mV.
If the [EDV_CMP] bit in CEDV Gauging Configuration is set, automatic EDV compensation is enabled
and the bq34210-Q1 device computes the EDV0, EDV1, and EDV2 thresholds based on values stored in
the selected CEDV profile in data memory and the battery's current discharge rate and temperature. If the
[FIXED_EDV0] bit in CEDV Gauging Configuration is also set, then the EDV0 threshold will be set to the
programmed Fixed EDV0, and the EDV1 and EDV2 compensated thresholds will not go below the
programmed Fixed EDV0.
The bq34210-Q1 device disables EDV detection if current exceeds the Overload Current threshold. The
bq34210-Q1 device resumes EDV threshold detection after current drops below the Overload Current
threshold. Any EDV threshold detected is reset after charge is applied and [VDQ] is cleared after 10 mAh
of charge.
The bq34210-Q1 device uses the EDV thresholds to apply voltage-based corrections to the RC register
(see Table 1-1).

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General Description
Table 1-1. State-of-Charge Based on Low Battery
Voltage
THRESHOLD RELATIVE STATE OF CHARGE
EDV0 0%
EDV1 3%
EDV2 Battery Low %
The bq34210-Q1 device performs EDV-based RC adjustments with current ≥C/32. No EDVs are set if
current < C/32. The bq34210-Q1 device adjusts RC as it detects each threshold. If the voltage threshold is
reached before the corresponding capacity on discharge, the bq34210-Q1 device reduces RC to the
appropriate amount, as shown in Table 1-1.
If an RC % level is reached on discharge before the voltage reaches the corresponding threshold, then
RC is held at that % level until the threshold is reached. RC is only held if [VDQ] = 1, indicating a valid
learning cycle is in progress. If Battery Low % is set to 0, EDV1 and EDV0 corrections are disabled.
1.1.5 EDV Discharge Rate and Temperature Compensation
If EDV compensation is enabled, the bq34210-Q1 device calculates battery voltage to determine EDV0,
EDV1, and EDV2 thresholds as a function of battery capacity, temperature, and discharge load. The
general equation for EDV0, EDV1, and EDV2 calculation is as follows:
EDV0,1,2 = n (EMF × FBL – |ILOAD| × R0 × FTZ) (1)
• EMF is a no-load cell voltage higher than the highest cell EDV threshold computed. EMF is
programmed in mV in the CEDV profile EMF.
• ILOAD is the current discharge load magnitude.
• n = the number of series cells. In the bq34210-Q1 case, n = 1.
• FBL is the factor that adjusts the EDV voltage for battery capacity and temperature to match the no-
load characteristics of the battery.
FBL = f (C0, C + C1, T) (2)
• C (either 0%, 3%, or Battery Low % for EDV0, EDV1, and EDV2, respectively) and C0 are the
capacity-related EDV adjustment factors. C0 is programmed in the CEDV profile C0. C1 is the desired
residual battery capacity remaining at EDV0 (RC = 0). The C1 factor is stored in the CEDV profile C1.
• T is the current temperature in °K.
• R0 × FTZ represents the resistance of a cell as a function of temperature and capacity.
FTZ = f (R1, T0, C + C1, TC) (3)
• R0 is the first order rate dependency factor stored in the CEDV profile R0.
• T is the current temperature; C is the battery capacity relating to EDV0, EDV1, and EDV2.
• R1 adjusts the variation of impedance with battery capacity. R1 is programmed in the CEDV profile R1.
• T0 adjusts the variation of impedance with battery temperature. T0 is programmed in the CEDV profile
T0.
• TC adjusts the variation of impedance for cold temperatures (T < 23°C). TC is programmed in the
CEDV profile TC.
The graphs below show the calculated EDV0, EDV1, and EDV2 thresholds versus capacity using the
typical compensation values for different temperatures and loads for a Li-Ion 18650 cell. The
compensation values vary widely for different cell types and manufacturers and must be matched exactly
to the unique characteristics for optimal performance.

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General Description
Figure 1-2. (a) EDV Calculations vs Capacity for Various Temperatures, (b) EDV Calculations vs Capacity
for Various Loads
1.1.6 EDV Age Factor
The EDV Age Factor enables the bq34210-Q1 device to correct the EDV detection algorithm to
compensate for cell aging. This parameter scales cell impedances as the cycle count increases. This new
factor is used to accommodate for much higher impedances observed in larger capacity and/or aged cells.
For most applications, the default value of 0 is sufficient; however, for some very specific applications, this
new aging factor may be required. In those cases, experimental data must be taken at the 0, 100, 200,
and 300 cycle-read points using a typical discharge rate while at ambient temperature. Entering this data
into a TI provided MathCAD™ program will yield the appropriate EDV Age factor value. Contact TI
Applications Support @ http://www-k.ext.ti.com/sc/technical-support/email-tech-support.asp?AAP for more
detailed information.
1.1.7 Self-Discharge
The bq34210-Q1 device estimates the self-discharge of the battery to maintain an accurate measure of
the battery capacity during periods of inactivity. The bq34210-Q1 device makes self-discharge
adjustments to RC every 1/4 second when awake and periodically when in SLEEP mode. The period is
determined by Sleep Current Time.
The nominal self-discharge rate, %PERDAY (% per day), is programmed in an 8-bit value Self-Discharge
Rate by the following relation:
Self-Discharge Rate = %PERDAY/0.0025
1.1.8 Battery Electronic Load Compensation
The bq34210-Q1 device can be configured to compensate for a constant load (as from battery electronics)
present in the battery pack at all times. The bq34210-Q1 device applies the compensation continuously
when the charge or discharge is below the digital filter. The bq34210-Q1 device applies the compensation
in addition to self-discharge. The compensation occurs at a rate determined by the value stored in
Electronics Load. The compensation range is 0 μA–765 μA in steps of approximately 3 µA.
The amount of internal battery electronics load estimate in μA, BEL, is stored as follows:
Electronics Load = BEL/3

Quit Current
(–)Quit Current
Current
Time
Relaxation Mode Charge Mode Discharge ModeRelaxation Mode Charge Mode Discharge Mode Relaxation Mode
Chg Relax Time
Dsg Relax Time
1 10 1 1 10[DSG]
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1.1.9 Initial Battery Capacity at Device Reset
The bq34210-Q1 device estimates the initial capacity of a battery pack at device reset, which is the case
when battery cells are first attached to the application circuit. The initial FullChargeCapacity() (FCC) is a
direct copy of the ROM CEDV profile parameter Full Charge Capacity. The initial RC and RSOC are
estimated using the open-circuit voltage (OCV) characteristics of the programmed Li-Ion (LiFePO4 or
NiMH) chemistry, DOD at EDV2, and Design Capacity (maximum chemical capacity). This gives a
reasonably accurate RC and RSOC; however, battery capacity learning is required in order to find the
accurate FCC, RC, and RSOC. During battery capacity learning, learned Full Charge Capacity, and DOD
at EDV2 will be learned and updated.
The determined value of remaining capacity can be further scaled, if needed, through the value of
RemCap Init Percent. Upon a reset, the final value of RemainingCapacity() is initialized from the
RemCap Init Percent value of the initial value correlated to the battery voltage table.
1.1.10 Fuel Gauge Operating Modes
Entry and exit of each mode is controlled by data memory parameters in the Current Thresholds
subclass. The [DSG] flag referenced below is from the MAC GaugingStatus() subcommand and is set in
RELAXATION and DISCHARGE modes. The [DSG] flag in BatteryStatus() is slightly different—it sets only
in DISCHARGE mode and not in RELAXATION mode.
CHARGE mode is exited and RELAXATION mode is entered when Current() goes below Quit Current for
a period of Charge Relax Time. DISCHARGE mode is entered when Current() goes below
(–)Dsg Current Threshold. DISCHARGE mode is exited and RELAXATION mode is entered when
Current() goes above (–)Quit Current threshold for a period of Discharge Relax Time. CHARGE mode is
entered when Current() goes above Chg Current Threshold.
Figure 1-3. Fuel Gauge Operating Mode Example

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General Description
1.1.11 CEDV Smoothing
The bq34210-Q1 device has the ability to smooth the RemainingCapacity() during discharge in order to
avoid a drop in RelativeStateOfCharge() when the EDV thresholds are reached. This feature is enabled by
setting the Smoothing Config [SMEN] = 1 and configuring the Smoothing Start Voltage and
Smoothing Delta Voltage.
The smoothing will activate only when all of the following conditions are true:
•Current() < 0
•Voltage() <Smoothing Start Voltage
• EDV2 has been reached ([EDV2] = 1) OR (Voltage() – present EDV2 threshold) < Smoothing Delta
Voltage.
• Maximum Voltage() during the previous one minute is less than the maximum Voltage() during the
current minute (that is, "drop rate" is greater than 0).
•RemainingCapacity() is greater than the capacity at the next EDV point.
While smoothing is active, the "drop rate" is used to estimate the time to the EDV point under the
assumption that the rate is constant (linear). This information is then used to estimate how much current
would need to be applied in order to have RemainingCapacity() reach the expected capacity at the EDV
point. The actual Current() is then scaled by the "smoothing current." This will either speed up or slow
down the RemainingCapacity() accumulation to reach the EDV threshold at the correct time.
Whenever the RemainingCapacity() accumulation is actively scaled, the OperationStatus()[SMTH] bit will
be set.
Smoothing deactivates whenever an EDV threshold is reached until the rate to the next EDV threshold
can be calculated; however, smoothing past the EDV2 point only occurs if Smoothing Config [SMEXT] is
set to 1.
To improve smoothing at the end of discharge, the SME0 configuration bit provides additional flexibility.
This is particularly useful when FIXED_EDV0 is set and the calculated EDV2/EDV1 is lower than EDV0. In
this scenario, the State-of-Charge (SOC) smooths to EDV2, then to EDV1, and then to EDV0, leading to
SOC jumps. If the SME0 bit is set, then the SOC smooths directly to EDV0, leading to a smooth transition
to empty.
Table 1-2 shows the available smoothing configurations.
Table 1-2. Smoothing Configurations
Smoothing Config
[SMEN] Smoothing Config [SMEXT] CEDV Config [SME0] Description
0 0 0 No Smoothing
0 0 1 No Smoothing
0 1 0 No Smoothing
0 1 1 No Smoothing
1 0 0 Smoothing to EDV2
1 0 1 Smoothing to EDV0 if calculated EDV2/EDV1 is less than EDV0.
1 1 0 Smoothing to EDV2 ≥EDV1 ≥EDV0
1 1 1 Smoothing to EDV0 if calculated EDV2/EDV1 is less than EDV0.
The bq34210-Q1 device can also add smoothing during charging. In situations when the FCC is not
updated during a discharge cycle or on a subsequent charge cycle, if the valid charge termination is
reached, RSOC is synced to 100% regardless of the true RSOC. To help in scenarios like these, the
device enables the SMOOTHEOC_EN bit (default is enabled). When enabled, the RSOC value is
gradually increased to 100% instead of a sudden jump if the following are true:
a. Battery is charging.
b. Cell Voltage > Taper Voltage
c. Charge Current is decreasing AND is below the EOC Smooth Current threshold for EOC Smooth
Current Time.

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General Description
1.2 Accumulated Charge Measurement
The bq34210-Q1 device integrates an Accumulated Charge function that measures the integrated
charge passed in or out of the cell since the integration is reset. This function can be used to generate an
alert to the host when a programmable threshold of Accumulated Charge is achieved.
The device also integrates the elapsed time since the integration began, assuming the timer was not
interrupted by a power cycle or put into SHUTDOWN mode. This time is read using the command
AccumulatedTime(). If an event has occurred that interrupted the timer, the value of AccumulatedTime()
will be fixed unchanging at 0 until the integration is reset.
The charge and time integration is reset at full charge termination or upon issue of the ACCUM_RESET
command. While the battery is discharging (that is, the measured Current() is negative), then the charge
integration counter increases. If the battery starts charging (that is, the measured Current() is positive),
then the charge integration counter decreases. The integrated charge value in mAh can be read by the
host using the command AccumulatedCharge(). The elapsed time (which does not decrease in value) is
read by issuing the AccumulatedTime() command.
The Accumulated Charge calculation uses the current measured across the sense resistor and, similar to
the coulomb counter integration, ignores currents below a programmed level controlled by CC Deadband.
In periods when the bq34210-Q1 device is in SLEEP mode, the Accumulated Charge integration
includes an estimate of the charge integrated based on analysis of the periodic measured current.
If the user prefers to include cell self-discharge in the integration, this capability can be enabled or
disabled using the [IGNORE_SD_EN] configuration bit.
The charge integration can also be limited to only include positive (charging) currents, only negative
(discharging) currents, or both, through setting the [ACCHG_EN] and [ACDSG_EN] configuration bits. If
both [ACCHG_EN] and [ACDSG_EN] are reset, then the timer is halted. These bits can be set using the
ACCUM_CHG_EN() and ACCUM_DSG_EN() commands.
When the cell is fully charged and the FC bit is set due to normal charge termination, then the integration
counter is again reset. At this point, the values of Accumulated Charge and time just before reset are
stored and can be read using LastAccumulatedCharge() and LastAccumulatedTime(). The values stored
in LastAccumulatedCharge() and LastAccumulatedTime() are cleared each time the command is issued
and the respective value is read. They are also overwritten whenever the integration counter is reset
again. The user can set thresholds to alert the host when AccumulatedCharge() reaches a particular level
in both the charge (positive) and discharge (negative) directions. These thresholds are set by Accum
Charge Positive Threshold and Accum Charge Negative Threshold.
NOTE: AccumulatedCharge() does not reset when a threshold is reached: The reset should be
initiated by the host using ACCUM_RESET. When a threshold is passed, a flag is set in
OperationStatus()[ACTHR].
It is possible for the integration counter to be reset at normal charge termination, but the
charger continues charging the battery for additional time until the charger ceases charging.
In this case, the integration counter would reset, then proceed to integrate this additional
charge. The user should be aware of this possibility and if it is a concern to plan for a
workaround, such as programming the integration to only accumulate discharging currents or
to detect when the charger stops charging, then issue an ACCUM_RESET command to
clear any residual charging integration.
Due to the charge integration and timer information being stored in RAM, any the device's power cycles or
putting the device into SHUTDOWN will result in the loss of AccumulatedCharge(),AccumulatedTime(),
LastAccumulatedCharge(), and LastAccumulatedTime() data.
Command R/W Type Min Max Default Units
AccumulatedCharge() R Signed integer, 2 bytes –32767 32767 0 mAh
LastAccumulatedCharge() R Signed integer, 2 bytes –32767 32767 0 mAh
AccumulatedTime() R Unsigned integer, 2 bytes 0 65535 0 5 min
LastAccumulatedTime() R Unsigned integer, 2 bytes 0 65535 0 5 min
ACCUM_RESET W Boolean NA NA NA

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General Description
1.3 End-Of-Service Determination
The bq34210-Q1 device incorporates the End-of-Service (EOS) Determination function to determine the
end of useful service of the battery and to provide alerts based on this detection. Learning phases are
used to gather information about the present state of the battery through its cell resistance. Learning
cycles are coordinated by the bq34210-Q1 device with the host, which enables and disables the learning
load. LEN or LLEN is used to denote the Learning Load Enable function. The EOS Determination function
is enabled when [EOS_EN] in ManufacturingStatus() = 1. This bit can be toggled using the EOS_EN()
subcommand. The ManufacturingStatus[EOS_EN] bit should not be written directly during CONFIG
UPDATE mode, but instead should be done via the EOS_EN() subcommand. If the [EOS_EN] bit or other
data memory values related to this function are changed directly in data memory, they will not take effect
until a device reset is issued.
For best results, it is recommended that JEITA-based charging is not enabled when the EOS
Determination feature is used.
There are two ways to initiate a learning phase:
a. To have it automatically controlled by the device (recommended) based on when the internal Auto
Learn Time timer has expired since the last successful learning phase OR
b. To have it triggered by the host by writing a ManufacturerAccessControl() EOS_START_LEARN()
subcommand to the device.
Automatic learning is disabled if Auto Learn Time = 0. There is also a special test mode, which is entered
using the [LTEST] bit and sets several timers to short time durations.
The learning phase can be implemented in two ways, which are controlled by the [LSM] bit:
a. CHARGE-BEFORE-DISCHARGE: The system begins a Learn Charge Phase where it enables
charging to a voltage given by the charging voltage determined by the selected algorithm (JEITA, for
example) incremented by Learn Charge Voltage Delta. This increases charging from the level used
when not in a learning phase.
NOTE: The data memory value of Last Charge Voltage Tx - Ty is not increased due to this Learn
Charge Phase.
After this charging is completed through normal charge termination, the device waits for the cell to
relax. It then initiates a Learn Discharge Phase, whereby an intended Learn Discharge Current is
enabled for a length of time given by Learn Discharge Time. When this time has expired, the device
disables the Learn Discharge Current. The bq34210-Q1 device analyzes the response of the battery
to this discharge current to estimate the status of the battery regarding its end of usable service.
If needed, the host continues discharging the battery until Voltage() reaches the appropriate voltage,
as determined by the charging algorithm selected, OR
b. DISCHARGE-BEFORE-CHARGE: The device begins by ensuring it is in a RELAXED state (typically
fully or near-fully charged).
The device begins a Learn Discharge Phase by enabling Learn Discharge Current for a length of
time given by Learn Discharge Time. When this time has expired, the device disables the Learn
Discharge Current.
The device can now be recharged to the appropriate voltage, as determined by the charging algorithm
selected, if needed.
NOTE: The learning discharge current value is set by external components and is not directly
controlled by the bq34210-Q1 device. However, this current is monitored throughout the
Learn Discharge Phase and evaluated to ensure it is close to the intended value.

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The CHARGE-BEFORE-DISCHARGE approach described above in (a) is appealing in that the battery
voltage is not discharged below the appropriate charging voltage level by the learning phase. However, it
requires the use of a charger with programmable charging voltage, which may be a limitation in some
systems. For those cases, the DISCHARGE-BEFORE-CHARGE approach in (b) is provided, whereby a
charger with a fixed output voltage can be used with the tradeoff that the battery voltage will be
discharged below this level during the Learn Discharge Phase. However, the amount of this reduction in
battery voltage, and thus capacity, can be controlled and limited to acceptable levels through appropriate
device settings.
The response of the battery to the learning discharge current is analyzed and used to estimate the cell
resistance, Rcell, and this resistance estimate is used in two different methods to evaluate the cell EOS
status:
a. Direct Resistance Decisioning (DRD): This method uses the newly measured value of Rcell and
computes the ratio of Rcell with that of an Initial Rcell captured when the battery was first put into
service. The ratios are compared to thresholds to generate an alert and a warning.
• Alert if (Rcell/Initial Rcell) > DRD Alert Level
• Warning if (Rcell/Initial Rcell) > DRD Warning Level
b. Resistance Slope Decisioning: This method uses the changes with respect to time of Rcell,
comparing this to programmable thresholds to generate an alert and a warning.
Use of Resistance Slope Decisioning (RSD) requires an accurate measurement of the time between
consecutive learning phases for calculation of the slope of Rcell change with respect to time. This will not
be possible if the device is powered off between learning phases; in which case, Direct Resistance
Decisioning (DRD) can still be used. If the device is programmed to use Resistance Slope Decisioning
and a power cycle is detected (or anything that could impact the validity of the time measurement between
learning phases), then the device defaults to only using Direct Resistance Decisioning until the device is
continuously powered long enough to complete multiple learning phases and accurately evaluate the
Rcell change over time.
1.3.1 Alert Config Registers
The Alert registers are detailed in this section.
Table 1-3. Alert Config Registers
Alert_x Config Register Matching Register
Alert_0 Config Battery Status Low Byte
Alert_1 Config Battery Status High Byte
Alert_2 Config EOS Learn Status Low Byte
Alert_3 Config EOS Learn Status High Byte
Alert_4 Config EOS Status
Alert_5 Config EOS Safety Status Active Bits
Alert_6 Config Operation Status 2 bits
1.3.1.1 Alert_0 Config
This register matches the Battery Status register low byte.
Table 1-4. Alert_0 Config Register Bit Definitions
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
SLEEP CHGINH FD FCSETV TCA TDA CHG DSG
Default 00000000
0x00

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SLEEP = Enables BatteryStatus()[SLEEP]
0 = Disabled (default)
1 = Enabled
CHGINH = Enables BatteryStatus()[CHGINH]
0 = Disabled (default)
1 = Enabled
FD = Enables BatteryStatus()[FD]
0 = Disabled (default)
1 = Enabled
FCSETV = Enables BatteryStatus()[FCSETV]
0 = Disabled (default)
1 = Enabled
TCA = Enables BatteryStatus()[TD]
0 = Disabled (default)
1 = Enabled
TDA = Enables BatteryStatus()[TDA]
0 = Disabled (default)
1 = Enabled
CHG = Enables BatteryStatus()[CHG]
0 = Disabled (default)
1 = Enabled
DSG = Enables BatteryStatus()[DSG]
0 = Disabled (default)
1 = Enabled
1.3.1.2 Alert_1 Config
This register matches the Battery Status register high byte.
Table 1-5. Alert_1 Config Register Bit Definitions
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
RSVD SOCLOW UTC UTD OTC OTD BATHIGH BATLOW
Default 00000000
0x00
RSVD = Reserved
SOCLOW = Enables BatteryStatus()[SOCLOW]
0 = Disabled (default)
1 = Enabled
UTC = Enables BatteryStatus()[UTC]
0 = Disabled (default)
1 = Enabled
UTD = Enables BatteryStatus()[UTD]
0 = Disabled (default)
1 = Enabled
OTC = Enables BatteryStatus()[OTC]
0 = Disabled (default)
1 = Enabled
OTD = Enables BatteryStatus()[OTD]
0 = Disabled (default)
1 = Enabled

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BATHIGH = Enables BatteryStatus()[BATHIGH]
0 = Disabled (default)
1 = Enabled
BATLOW = Enables BatteryStatus()[BATLOW]
0 = Disabled (default)
1 = Enabled
1.3.1.3 Alert_2 Config
This register matches the EOS Learn Status register low byte.
Table 1-6. Alert_2 Config Register Bit Definitions
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
LCT0 LFAULT LABRT LCMD LPER LRLX LCHG LDSG
Default 00000000
0x00
LCT0 = Enables EOSLearnStatus()[LCT0]
0 = Disabled (default)
1 = Enabled
LFAULT = Enables EOSLearnStatus()[LFAULT]
0 = Disabled (default)
1 = Enabled
LABRT = Enables EOSLearnStatus()[LABRT]
0 = Disabled (default)
1 = Enabled
LCMD = Enables EOSLearnStatus()[LCMD]
0 = Disabled (default)
1 = Enabled
LPER = Enables EOSLearnStatus()[LPER]
0 = Disabled (default)
1 = Enabled
LRLX = Enables EOSLearnStatus()[LRLX]
0 = Disabled (default)
1 = Enabled
LCHG = Enables EOSLearnStatus()[LDSG]
0 = Disabled (default)
1 = Enabled
LDSG = Enables EOSLearnStatus()[LDSG]
0 = Disabled (default)
1 = Enabled
1.3.1.4 Alert_3 Config
This register matches the EOS Learn Status register high byte.

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Table 1-7. Alert_3 Config Register Bit Definitions
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
LDONE LRES LRSTOR LCTLEDGE LUCD LDPAM LDPAT LDPAI
Default 00000000
0x00
LDONE = Enables EOSLearnStatus()[LDONE]
0 = Disabled (default)
1 = Enabled
LRES = Enables EOSLearnStatus()[LRES]
0 = Disabled (default)
1 = Enabled
LRSTOR = Enables EOSLearnStatus()[LRSTOR]
0 = Disabled (default)
1 = Enabled
LCTLEDGE = Enables EOSLearnStatus()[LCTLEDGE]
0 = Disabled (default)
1 = Enabled
LUCD = Enables EOSLearnStatus()[LUCD]
0 = Disabled (default)
1 = Enabled
LDPAM = Enables EOSLearnStatus()[LDPAM]
0 = Disabled (default)
1 = Enabled
LDPAT = Enables EOSLearnStatus()[LDPAT]
0 = Disabled (default)
1 = Enabled
LDPAI = Enables EOSLearnStatus()[LDPAI]
0 = Disabled (default)
1 = Enabled
1.3.1.5 Alert_4 Config
This register matches the EOS Status register.
Table 1-8. Alert_4 Config Register Bit Definitions
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
SRRL SRCL RSVD LTI RSDLI RCELLR IRRCOMP IRCOMP
Default 00000000
0x00
SRRL = Enables EOSStatus()[SRRL]
0 = Disabled (default)
1 = Enabled
SRCL = Enables EOSStatus()[SRCL]
0 = Disabled (default)
1 = Enabled
RSVD = Reserved
LTI = Enables EOSStatus()[LTI]
0 = Disabled (default)

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1 = Enabled
RSDLI = Enables EOSStatus()[RSDLI]
0 = Disabled (default)
1 = Enabled
RCELLR = Enables EOSStatus()[RCELLR]
0 = Disabled (default)
1 = Enabled
IRRCOMP = Enables EOSStatus()[IRRCOMP]
0 = Disabled (default)
1 = Enabled
IRCOMP = Enables EOSStatus()[IRCOMP]
0 = Disabled (default)
1 = Enabled
1.3.1.6 Alert_5 Config
This register matches the EOS Safety Status register active bits. Bits 7:4 in the Alert_5 Config register
match the EOS Safety Status register's high byte, Bits 3:0. Bits 3:0 in the Alert_5 Config register match
the EOS Safety Status register's low byte, Bits 3:0.
Table 1-9. Alert_5 Config Register Bit Definitions
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
RSVD RSDLWARN RSDWARN DRDWARN RSVD RSDL
ALERT RSDALERT DRDALERT
Default 00000000
0x00
RSVD = Reserved
RSDLWARN = Enables EOSSafetyStatus()[RSDLWARN]
0 = Disabled (default)
1 = Enabled
RSDWARN = Enables EOSSafetyStatus()[RSDWARN]
0 = Disabled (default)
1 = Enabled
DRDWARN = Enables EOSSafetyStatus()[DRDWARN]
0 = Disabled (default)
1 = Enabled
RSVD = Reserved
RSDLALERT = Enables EOSSafetyStatus()[RSDLALERT]
0 = Disabled (default)
1 = Enabled
RSDALERT = Enables EOSSafetyStatus()[RSDALERT]
0 = Disabled (default)
1 = Enabled
DRDALERT = Enables EOSLearnStatus()[DRDALERT]
0 = Disabled (default)
1 = Enabled
1.3.1.7 Alert_6 Config
This register matches two bits from the Operation Status low byte.