Texas Instruments TPS23758EVM-080 User manual

User’s Guide
TPS23758EVM-080 Evaluation Module
ABSTRACT
This user’s guide describes the TPS23758 evaluation module (EVM). The TPS23758 evaluation module
(TPS23758EVM-080) contains evaluation and reference circuitry for the TPS23758 device. The TPS23758
device is an IEEE 802.3at Type 1 compliant, powered-device (PD) controller and power supply controller
optimized for primary side regulation flyback converter topologies. The TPS23758EVM-080 is targeted for a 5-V
synchronous-rectified high efficiency 13-W PD solution.
Table of Contents
1 Introduction.............................................................................................................................................................................2
2 Electrical Specifications........................................................................................................................................................ 2
3 Description.............................................................................................................................................................................. 3
4 Schematic................................................................................................................................................................................4
5 General Configuration and Description................................................................................................................................5
6 TPS23758EVM-080 Performance Data.................................................................................................................................. 6
7 EVM Assembly Drawings and Layout Guidelines............................................................................................................. 12
8 Bill of Materials..................................................................................................................................................................... 16
9 Revision History................................................................................................................................................................... 21
List of Figures
Figure 4-1. TPS23758EVM-080 Schematic.................................................................................................................................4
Figure 6-1. Startup Response When Connected to a PoE PSE (TPS23880)............................................................................. 6
Figure 6-2. DCDC Startup........................................................................................................................................................... 6
Figure 6-3. Transient Response from 100 mA to 1 A for a 48-V Input.........................................................................................7
Figure 6-4. Efficiency of the TPS23758EVM-080........................................................................................................................ 8
Figure 6-5. TPS23758EVM-080 Load Regulation....................................................................................................................... 9
Figure 6-6. DCDC Recovery from Output Short.......................................................................................................................... 9
Figure 6-7. SRF = 0 Ω................................................................................................................................................................10
Figure 6-8. SRF = 100 Ω............................................................................................................................................................10
Figure 6-9. SRR = 0 Ω............................................................................................................................................................... 11
Figure 6-10. SRR = 10 Ω........................................................................................................................................................... 11
Figure 7-1. Top-Side Component Placement.............................................................................................................................12
Figure 7-2. Layer 2 Routing....................................................................................................................................................... 12
Figure 7-3. Layer 3 Routing....................................................................................................................................................... 13
Figure 7-4. Bottom-Side Routing............................................................................................................................................... 13
List of Tables
Table 2-1. TPS23758EVM-080 Electrical and Performance Specifications at 25°C....................................................................2
Table 5-1. Connector Functionality.............................................................................................................................................. 5
Table 5-2. Test Points.................................................................................................................................................................. 5
Table 8-1. TPS23758EVM-080 BOM.........................................................................................................................................16
Trademarks
All trademarks are the property of their respective owners.
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1 Introduction
The TPS23758EVM-080 allows reference circuitry evaluation of the TPS23758 device. It contains input and
output power connectors and an array of onboard test points for circuit evaluation.
1.1 Features
• IEEE802.3at Type 1 compliant PoE PD
• Class 0 5-V and 2.3-A primary side regulated CCM flyback
• Advanced startup
• Programmable slew rate and frequency dithering for EMI reduction
• Primary-side adapter priority control
1.2 Applications
• IP cameras
• Access points
• Point-of-sale
• Barcode readers
• IP phones
• Wireless LAN- wireless access points
2 Electrical Specifications
Table 2-1. TPS23758EVM-080 Electrical and Performance Specifications at 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER INTERFACE
Input voltage Applied to the power pins of connectors J1 37 57 V
Applied to the power pins of connectors J4 48 V
Input UVLO, POE input J1 Rising input voltage 36 V
Falling input voltage 30
Detection voltage At device terminals 2.7 10.1 V
Classification voltage At device terminals 14.5 20.5 V
Classification Current Class 0 0 4 mA
Inrush current-limit 140 mA
Operating current-limit 550 mA
DC-TO-DC CONVERTER
Output voltage VIN = 48 V, ILOAD ≤ ILOAD (max) 5 V
Output current 37 V ≤ VIN ≤ 57 V 2.3 A
Output ripple voltage peak-to-peak VIN = 48 V, ILOAD = 1 A 34 mV
Efficiency, end-to-end
VIN = 48 V, ILOAD= 230 mA 61
%VIN = 48 V, ILOAD = 1.15 A 85
VIN = 48 V, ILOAD = 2.3 A 87
Switching frequency 250 kHz
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3 Description
The TPS23758EVM-080 enables full evaluation of the TPS23758 device. Refer to the schematic shown in
Figure 4-1. Ethernet power is applied from J1 and is dropped to the bridge rectifier (D1, D2). The Power over
Ethernet (PoE) transformer needed to transfer power or data is T1. The Bob Smith Terminations help balance
the Ethernet cable impedance and are critical for ESD and EMI or EMC performance. The EMI or EMC filter and
transient protection for the TPS23758 device are at the output of the diode bridge.
Input power can also be applied at J4 from a DC source when power at J1 is not present.
The TPS23758 (U1) PD and DC-to-DC converter circuitry is shown in Figure 4-1. R17 provides the detection
signature. The switched side of the PD controller is to the right of U1. The TPS23758 RTN pin provides inrush
limited turn on and charge of the bulk capacitor, C18.
The DC-to-DC converter is a high-efficiency diode rectified primary-side regulated flyback converter.
Output voltage feedback is provided with R19 and R24 on the bias winding. R16 provides a means for error
injection to measure the frequency response of the converter.
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4 Schematic
Figure 4-1. TPS23758EVM-080 Schematic
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5 General Configuration and Description
5.1 Physical Access
Table 5-1 lists the EVM connector functionality. Table 5-2 describes the test point availability and jumper
functionality.
Table 5-1. Connector Functionality
Connector Label Description
J1 PWR+DATA PoE input; connect to PSE power and data source.
J2 DATA Ethernet data passthrough; connect to downstream Ethernet device.
J3 Output Output connector to load.
J4 Adapter Input DC-to-DC converter input bypassing the PoE converter; connect a 12-V adapter.
J5 LED Jump J4 to visually indicate the output voltage.
J6 FREQ Jump to 'Fixed' for fixed frequency. Jump to 'Dither' to enable spread spectrum dithering.
Table 5-2. Test Points
Test Point Label Description
TP1 BS Bob Smith termination
TP2 VREG Bias winding
TP3 VCC Switching supply voltage
TP4 VPD Input voltage
TP5 VOUT Output voltage
TP6, TP10 PGND Primary ground
TP7 GND Secondary ground
TP8 VDD DC-DC converter input
TP9 RSNS Current sense voltage
TP11 SST Soft start and hiccup timer
TP12 VSS PoE input return ground
TP13 FB Feedback loop
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6 TPS23758EVM-080 Performance Data
6.1 Startup to PSE and DCDC Startup
Figure 6-1 shows the startup response of the TPS23758EVM-080.
Figure 6-1. Startup Response When Connected to a PoE PSE (TPS23880)
Figure 6-2. DCDC Startup
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6.2 Transient Response
Figure 6-3 shows the transient response of the TPS23758EVM-080.
Figure 6-3. Transient Response from 100 mA to 1 A for a 48-V Input
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6.3 Efficiency
Figure 6-4 shows the efficiency of the TPS23758EVM-080.
Figure 6-4. Efficiency of the TPS23758EVM-080
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6.4 Load Regulation
Figure 6-5. TPS23758EVM-080 Load Regulation
6.5 Recovery from VOUT Short
Figure 6-6. DCDC Recovery from Output Short
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6.6 Slew Rate Adjust
Figure 6-7. SRF = 0 Ω
Figure 6-8. SRF = 100 Ω
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Figure 6-9. SRR = 0 Ω
Figure 6-10. SRR = 10 Ω
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7 EVM Assembly Drawings and Layout Guidelines
7.1 PCB Drawings
Figure 7-1 to Figure 7-4 show the component placement and layout of the TPS23758EVM-080.
Figure 7-1. Top-Side Component Placement
Figure 7-2. Layer 2 Routing
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Figure 7-3. Layer 3 Routing
Figure 7-4. Bottom-Side Routing
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7.2 Layout Guidelines
The layout of the PoE front end should follow power and EMI or ESD best-practice guidelines. A basic set of
recommendations includes:
• Pin 22 of the TPS23758 is omitted from the IC to ensure high voltage clearance from Pin 24 (DRAIN).
Therefore, the Pin 22 footprint should be removed when laying out the TPS23758.
• It is recommended having at least 8 vias (VSS) connecting the exposed thermal pad through a top layer
plane (2 oz copper recommended) to a bottom VSS plane (2 oz. copper recommended) to help with thermal
dissipation.
• The Pin 24 of the TPS23758 should be near the power transformer and the current sense resistor should be
close to Pin 1 of the TPS23758to minimize the primary loop.
• Parts placement must be driven by power flow in a point-to-point manner; RJ-45, Ethernet transformer, diode
bridges, TVS and 0.1-μF capacitor, and TPS23758 converter input bulk capacitor.
• Make all leads as short as possible with wide power traces and paired signal and return.
• No crossovers of signals from one part of the flow to another are allowed.
• Spacing consistent with safety standards like IEC60950 must be observed between the 48-V input voltage
rails and between the input and an isolated converter output.
• Use large copper fills and traces on SMT power-dissipating devices, and use wide traces or overlay copper
fills in the power path.
The DC-to-DC converter layout benefits from basic rules such as:
• Having at least 4 vias (VDD) near the power transformer pin connected to VDD through multiple layer planes
to help with thermal dissipation of the power transformer.
• Having at least 6 vias (secondary ground) near the power transformer pin connected to secondary ground
through multiple layer planes to help with thermal dissipation of the power transformer.
• Pair signals to reduce emissions and noise, especially the paths that carry high-current pulses, which include
the power semiconductors and magnetics.
• Minimize the trace length of high current power semiconductors and magnetic components.
• Use the ground plane for the switching currents carefully.
• Keep the high-current and high-voltage switching away from low-level sensing circuits including those outside
the power supply.
• Proper spacing around the high-voltage sections of the converter.
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7.3 EMI Containment
• Use compact loops for dv/dt and di/dt circuit paths (power loops and gate drives).
• Use minimal, yet thermally adequate, copper areas for heat sinking of components tied to switching nodes
(minimize exposed radiating surface). Hide copper associated with switching nodes under shielded
magnetics, where possible.
• Use copper ground planes (possible stitching) and top-layer copper floods (surround circuitry with ground
floods).
• Use a 4-layer PCB, if economically feasible (for better grounding).
• Minimize the amount of copper area associated with input traces (to minimize radiated pickup).
• Heat sink the quiet side of components instead of the switching side, where possible (like the output side of
inductor).
• Use Bob Smith terminations, Bob Smith EFT capacitor, and Bob Smith plane. Use Bob Smith plane as a
ground shield on input side of PCB (creating a phantom or literal earth ground).
• Use LC filter at DC-to-DC input.
• Dampen high-frequency ringing on all switching nodes, if present (allow for possible snubbers).
• Control rise times with gate-drive resistors and possibly snubbers.
• Switching frequency considerations.
• Use of EMI bridge capacitor across isolation boundary (isolated topologies).
• Observe the polarity dot on inductors (embed noisy end).
• Use of ferrite beads on input (allow for possible use of beads or 0-Ω resistors).
• Maintain physical separation between input-related circuitry and power circuitry (use ferrite beads as
boundary line).
• Balance efficiency versus acceptable noise margin.
• Possible use of common-mode inductors.
• Possible use of integrated RJ-45 jacks (shielded with internal transformer and Bob Smith terminations).
• End-product enclosure considerations (shielding).
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8 Bill of Materials
Table 8-1 details the EVM bill of materials.
Table 8-1. TPS23758EVM-080 BOM
Designator Quantity Value Description PackageReference PartNumber Manufacturer Alternate
PartNumber
Alternate
Manufacturer
!PCB1 1 Printed Circuit
Board
PSIL080 Any
C1, C2 2 1000 pF CAP, CERM, 1000
pF, 2000 V,+/- 10%,
X7R, 1812
1812 1812GC102KAT1
A
AVX
C3, C6 2 0.01 uF CAP, CERM, 0.01
uF, 100 V, +/- 10%,
X7R, 0603
0603 06031C103KAT2
A
AVX
C4, C20 2 2200 pF CAP, CERM, 2200
pF, 2000 V, +/-
10%, X7R, 1812
1812 C4532X7R3D222
K130KA
TDK
C5 1 CAP CER 3.3 UF
25 V X7R 1206
1206 CL31B335KAHV
PNE
Samsung
C8 1 22 uF CAP, AL, 22 uF,
100 V, +/- 20%, 1.3
ohm, AEC-Q200
Grade 2, SMD
SMT Radial F EEE-FK2A220P Panasonic
C9, C12, C21, C23 4 0.1 uF CAP, CERM, 0.1
uF, 100 V, +/- 10%,
X7R, 0805
0805 C2012X7R2A104
K125AA
TDK
C10, C11 2 2.2 uF CAP, CERM, 2.2
uF, 100 V, +/- 10%,
X7R, AEC-Q200
Grade 1,
CGA6N3X7R2A2
25K230AB
TDK
C13, C14, C22 3 1000 pF CAP, CERM, 1000
pF, 100 V, +/- 10%,
X7R, 0603
0603 C1608X7R2A102
K080AA
TDK
C15, C16, C17 3 100 uF CAP, CERM, 100
uF, 10 V, +/- 20%,
X5R, 1210
1210 GRM32ER61A10
7ME20L
MuRata
C18, C29 2 2200 pF CAP, CERM, 2200
pF, 50 V, +/- 10%,
X7R, 0603
0603 C0603C222K5R
AC
Kemet
C19 1 0.22 uF CAP, CERM, 0.22
uF, 100 V, +/- 10%,
X7R, 1206
1206 C3216X7R2A224
K115AA
TDK
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Table 8-1. TPS23758EVM-080 BOM (continued)
Designator Quantity Value Description PackageReference PartNumber Manufacturer Alternate
PartNumber
Alternate
Manufacturer
C24 1 1 uF CAP, CERM, 1 uF,
25 V, +/- 10%, X7R,
AEC-Q200 Grade
1, 0603
0603 GCM188R71E10
5KA64D
MuRata
C25 1 22 pF CAP, CERM, 22 pF,
50 V, +/- 5%, C0G/
NP0, AEC-Q200
Grade 1, 0402
0402 CGA2B2NP01H2
20J050BA
TDK
C26 1 Cap Ceramic 56pF
50V C0G 5% SMD
0402 125C Paper
T/R
0402 (1005 Metric) CL05C560JB5N
NNC
Samsung
C27 1 0.022 uF CAP, CERM, 0.022
uF, 16 V, +/- 10%,
X7R, 0603
0603 C0603C223K4R
ACTU
Kemet
C28 1 1000 pF CAP, CERM, 1000
pF, 50 V, +/- 5%,
X7R, 0603
0603 CL10C102JB8N
NNC
Samsung Electro-
Mechanics
C30 1 0.1 uF CAP, CERM, 0.1
uF, 25 V, +/- 10%,
X7R, AEC-Q200
Grade 1, 0603
0603 CGA3E2X7R1E1
04K080AA
TDK
D1, D2, D10 3 100 V Diode, Switching,
100 V, 0.2 A,
SOD-123
SOD-123 MMSD4148T1G ON Semiconductor
D3, D4 2 12 V Diode, Zener, 12 V,
500 mW, SOD-123
SOD-123 MMSZ5242B-7-F Diodes Inc.
D5 1 200 V Diode, Ultrafast,
200 V, 1 A, SMA
SMA MURA120T3G ON Semiconductor
D6, D7 2 100 V Diode, Switching-
Bridge, 100 V, 0.8
A, MiniDIP
MiniDIP HD01-T Diodes Inc.
D8 1 24 V Diode, Zener, 24 V,
1 W, SMA
SMA SMAZ24-13-F Diodes Inc.
D9 1 100 V Diode, Schottky,
100 V, 1 A, SMA
SMA B1100-13-F Diodes Inc.
D11 1 58 V Diode, TVS, Uni, 58
V, SMA
SMA SMAJ58A-13-F Diodes Inc.
D12 1 Yellow LED, Yellow, SMD LED_0603 150060YS75000 Wurth Elektronik
D13 1 6.2 V Diode, Zener, 6.2 V,
500 mW, SOD-123
SOD-123 MMSZ5234B-7-F Diodes Inc.
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Table 8-1. TPS23758EVM-080 BOM (continued)
Designator Quantity Value Description PackageReference PartNumber Manufacturer Alternate
PartNumber
Alternate
Manufacturer
H1, H2, H3, H4 4 Bumpon,
Hemisphere, 0.44 X
0.20, Clear
Transparent Bumpon SJ-5303
(CLEAR)
3M
J1, J2 2 RJ45, No LED, tab
up, R/A, TH
16.26 x 14.54 x 15.75 1-406541-1 TE Connectivity
J3, J4 2 Terminal Block, 3.5
mm Pitch, 2x1, TH
7.0 x 8.2 x 6.5 mm ED555/2DS On-Shore
Technology
J5 1 Header, 2.54 mm, 2
x 1, Gold, R/A,
SMT
Header, 2.54 mm, 2 x
1, R/A, SMT
878980204 Molex
J6 1 Header, 100 mil,
3x1, Gold, TH
PBC03SAAN PBC03SAAN Sullins Connector
Solutions
L1 1 3.3 uH Inductor, Shielded,
Composite, 3.3 uH,
0.72 A, 0.28 ohm,
SMD
SMD, 2.2 x 1.45 mm PFL2015-332ME
B
Coilcraft
L2, L4, L5, L7 4 100 ohm Ferrite Bead, 100
ohm @ 100 MHz, 1
A, 0603
0603 MPZ1608D101B
TD25
TDK
Q1 1 30 V MOSFET, N-CH, 30
V, 20 A, DNH0008A
(VSONP-8)
DNH0008A CSD17579Q3A Texas Instruments None
R1, R2, R3, R6 4 75.0 RES, 75.0, 1%, 0.1
W, 0603
0603 RC0603FR-0775
RL
Yageo America
R4 1 3.3 k RES, 3.3 k, 5%,
0.125 W, 0805
0805 ERJ-6GEYJ332V Panasonic
R5 1 3.9 RES, 3.9, 5%,
0.125 W, AEC-
Q200 Grade 0,
0805
0805 CRCW08053R90
JNEA
Vishay-Dale
R7, R28 2 10 RES, 10, 5%, 0.063
W, AEC-Q200
Grade 0, 0402
0402 CRCW040210R0
JNED
Vishay-Dale
R8, R11, R12, R20 4 0 RES, 0, 5%, 0.1 W,
0603
0603 ERJ-3GEY0R00
V
Panasonic
R9 1 39 k RES, 39 k, 5%,
0.125 W, 0805
0805 ERJ-6GEYJ393V Panasonic
R10 1 RES SMD 1.3 OHM
5% 1/4W 1206
1206 ERJ-8GEYJ1R3V Panasonic
R13, R14 2 0.91 RES, 0.91, 1%,
0.25 W, 0805
0805 CRM0805-FX-
R910ELF
Bourns
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Table 8-1. TPS23758EVM-080 BOM (continued)
Designator Quantity Value Description PackageReference PartNumber Manufacturer Alternate
PartNumber
Alternate
Manufacturer
R15 1 0 RES, 1.0 K, 5%,
0.063 W, AEC-
Q200 Grade 0,
0402
0402 CRCW04020000
Z0ED
Vishay-Dale
R16 1 49.9 RES, 49.9, 1%,
0.063 W, 0402
0402 RC0402FR-0749
R9L
Yageo America
R17 1 24.9 k RES, 24.9 k, 1%,
0.063 W, AEC-
Q200 Grade 0,
0402
0402 CRCW040224K9
FKED
Vishay-Dale
R18 1 2.43 k RES, 2.43 k, 1%,
0.1 W, AEC-Q200
Grade 0, 0603
0603 CRCW06032K43
FKEA
Vishay-Dale
R19, R22 2 200 k RES, 200 k, 1%,
0.1 W, 0402
0402 ERJ-2RKF2003X Panasonic
R21 1 200 k RES, 200 k, 1%,
0.063 W, AEC-
Q200 Grade 0,
0402
0402 CRCW0402200K
FKED
Vishay-Dale
R23 1 237 k RES, 237 k, 1%,
0.063 W, AEC-
Q200 Grade 0,
0402
0402 CRCW0402237K
FKED
Vishay-Dale
R24 1 36.5 k RES, 36.5 k, 1%,
0.063 W, AEC-
Q200 Grade 0,
0402
0402 CRCW040236K5
FKED
Vishay-Dale
R25 1 100 RES, 100, 5%, 0.1
W, AEC-Q200
Grade 0, 0402
0402 ERJ-2GEJ101X Panasonic
R26 1 9.09 k RES, 9.09 k, 5%,
0.063 W, AEC-
Q200 Grade 0,
0402
0402 CRCW04029K09
FKED
Vishay-Dale
R27 1 60.4 k RES, 60.4 k, 1%,
0.063 W, AEC-
Q200 Grade 0,
0402
0402 CRCW040260K4
FKED
Vishay-Dale
R29 1 45.3 RES, 45.3, 1%, 0.1
W, AEC-Q200
Grade 0, 0603
0603 CRCW060345R3
FKEA
Vishay-Dale
SH-J1, SH-J2 2 Shunt, 2.54 mm,
Gold, Black
Shunt, 2.54 mm,
Black
60900213421 Wurth Elektronik
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Table 8-1. TPS23758EVM-080 BOM (continued)
Designator Quantity Value Description PackageReference PartNumber Manufacturer Alternate
PartNumber
Alternate
Manufacturer
T1 1 350 uH Transformer, 350
uH, SMT
358 x 236 x 500 mil H2019FNLT Pulse Engineering
T2 1 150 uH Transformer, 150
uH, SMT
14 x 16.2 mm LDT1018-50R Linkcom
Manufacturing Co.
750318525 Wurth Elektronik
TP1 1 Test Point,
Miniature, SMT
Test Point, Miniature,
SMT
5019 Keystone
TP2, TP3, TP4,
TP5, TP8
5 Test Point,
Miniature, Red, TH
Red Miniature
Testpoint
5000 Keystone
TP6, TP7, TP10,
TP12
4 Test Point,
Miniature, Black,
TH
Black Miniature
Testpoint
5001 Keystone
TP9, TP13 2 Test Point,
Miniature, Orange,
TH
Orange Miniature
Testpoint
5003 Keystone
TP11 1 Test Point,
Miniature, White,
TH
White Miniature
Testpoint
5002 Keystone
U1 1 IEEE 802.3at PoE
PD with No-Opto
Flyback DC-DC
Controller,
RJJ0023B
(VSON-23)
RJJ0023B TPS23758RJJ Texas Instruments Texas Instruments
FID1, FID2, FID3,
FID4, FID5, FID6
0 Fiducial mark.
There is nothing to
buy or mount.
N/A N/A N/A
L3, L6 0 1 mH Coupled inductor, 1
mH, 0.8 A, 0.31
ohm, SMD
9.2 x 6 mm 744222 Wurth Elektronik
Bill of Materials www.ti.com
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