
Probe
The active element in the detector probe is a silicon PIN diode which is enclosed in a
thin brass capsule to shield it against light and stray electromagnetic fields. The sensitive
element is parallel to the face of the probe.
The probe is connected to its amplifier unit through a length of small-diameter coaxial
cable. The detector probe operates in "DC" mode and is intended to be used in close
proximity to concentrated sources of gamma-emitting radio-nuclides.
Three sizes of Si diode probe are available; 7.6 mm2(standard), 25 mm2, and 3 x 30 mm.
The diode substrate thickness is 300 microns, and produces approximately 1 pico-ampere
per mm2per rad / hr (Si). Also available are high-sensitivity scintillation probes with 1
cu cm or 10 cu cm CsI(Tl) crystals coupled to 1 sq cm Si photo-diodes .
The probes are not necessarily symmetrical front-to-back; One face is
somewhat more sensitive than the other – especially when the source of
activity is intimately coupled, as in a flow-cell application. On the smaller
(2.7 x 2.7 mm and 5 x 5 mm probes) the more sensitive face is recognized by
a small ‘bulge’ formed by a solder connection under the shrink-tubing . On
the 3 x 30 mm probe, the more sensitive face is the ‘smooth’ (no-bulge) face
of the probe.
Mechanical
The probes are mechanically robust and are not damaged by normal handling.
However, the probe and its connecting cable may generate spurious signals
("microphonics") if moved or flexed during use. When making a measurement, the probe
and its cable should be held in place and padded if necessary to minimize coupling to
sources of vibration such as fans, pumps, motors, etc.
The amplifier is built into a small aluminum case approximately 6" long x 3" wide x 1.5"
high (exclusive of cable connectors).
DC-Amplifiers
A small positive DC offset -- equivalent to approximately 5 pico-amperes or less (~0.5%
referred to full-scale), in the absence of radiation -- is normally present. Measurements
at very low radiation exposure dose levels are confounded to some degree due to this
offset, and by slow changes in offset -- referred to as "drift" -- which are
indistinguishable from changes in radiation intensity. Other sources of error are detector
diode leakage and "dark" currents--all of which, in turn, are strongly influenced by