Gan systems Gs-evb-hbdb-ims User manual

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

Visit www.gansystems.com for the latest version of this technical manual.

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

DANGER

DO NOT TOUCH THE BOARD WHEN IT IS ENERGIZED AND ALLOW ALL

COMPONENTS TO DISCHARGE COMPLETELY PRIOR HANDLING THE BOARD.

HIGH VOLTAGE CAN BE EXPOSED ON THE BOARD WHEN IT IS CONNECTED

TO POWER SOURCE. EVEN BRIEF CONTACT DURING OPERATION MAY

RESULT IN SEVERE INJURY OR DEATH.

Please sure that appropriate safety procedures are followed. This evaluation kit

is designed for engineering evaluation in a controlled lab environment and

should be handled by qualified personnel ONLY. Never leave the board

operating unattended.

WARNING

Some components can be hot during and after operation. There is NO built-in

electrical or thermal protection on this evaluation kit. The operating voltage,

current and component temperature should be monitored closely during

operation to prevent device damage.

CAUTION

This product contains parts that are susceptible to damage by electrostatic

discharge (ESD). Always follow ESD prevention procedures when handling the

product.

 GS-EVB-HBDB-IMS 
650 V Universal Half Bridge Isolated Driver Motherboard for IMS2 
& IMS3 
Technical Manual 
____________________________________________________________________________________________________________________________________________ 
GS-EVB-HBDB-IMS TM Rev. 220329 © 2022 GaN Systems Inc. www.gansystems.com 3 
 
Please refer to the Evaluation Board/Kit Important Notice on page 19 
Contents 
1Overview..............................................................................................................................................................5 
1.1 Introduction ...............................................................................................................................................5 
1.2 Features and Benefits................................................................................................................................5 
1.3 Applications ...............................................................................................................................................5 
1.4 Content .......................................................................................................................................................5 
2Motherboard Technical Specifications.............................................................................................................7 
2.1 Half Bridge Isolated Driver Mother Board Overview..........................................................................7 
2.2 Gate Driver Circuit....................................................................................................................................8 
2.3 5V Input and External PWM Signals Input ...........................................................................................8 
2.4 Temperature Monitoring Hole ................................................................................................................9 
2.5Installation of IMS Half-Bridge Daughter power board......................................................................9 
2.6 DC Link Decoupling Capacitors .............................................................................................................9 
3IMS Half Bridge Daughter Power Board Options........................................................................................10 
4Test Results ........................................................................................................................................................12 
4.1 Double Pulse Test (GS-EVB-HBDB-IMS + GS-EVB-IMS3-66508B-GS) ............................................12 
4.2 Boost Configuration Test (GS-EVB-HBDB-IMS + GS-EVB-IMS3-66508B-GS) ................................14 
5GS-EVB-HBDB-IMS Schematics and BoM ....................................................................................................16 
 
 

 GS-EVB-HBDB-IMS 
650 V Universal Half Bridge Isolated Driver Motherboard for IMS2 
& IMS3 
Technical Manual 
____________________________________________________________________________________________________________________________________________ 
GS-EVB-HBDB-IMS TM Rev. 220329 © 2022 GaN Systems Inc. www.gansystems.com 4 
 
Please refer to the Evaluation Board/Kit Important Notice on page 19 
List of Figures 
Figure 1 IMS EVB motherboard GS-EVB-HBDB-IMS ..........................................................................................6 
Figure 2 Assembled IMS EVB module with heatsink............................................................................................6 
Figure 3 Circuit block diagram of IMS EVB Module ............................................................................................7 
Figure 4 Labelled driver motherboard....................................................................................................................7 
Figure 5 Gate driver circuit (Silicon Labs P/N: Si8271).........................................................................................8 
Figure 6 External 5V and PWM signals connector pin .........................................................................................8 
Figure 7 Soldering pin guide....................................................................................................................................9 
Figure 8 Cross-section view of IMS assembly showing the power loop path.................................................10 
Figure 9 Compatible IMS2 daughter power boards ...........................................................................................10 
Figure 10 Compatible IMS3 daughter power boards .........................................................................................11 
Figure 11 GS66516B and GS66508B GaNPX® packaged GaN E-mode transistor ..........................................11 
Figure 12 Cross-section view of a single layer IMS board .................................................................................11 
Figure 13 Double pulse test setup schematics .....................................................................................................12 
Figure 14 Double pulse test setup .........................................................................................................................13 
Figure 15 Double pulse test waveforms (400V/30A)...........................................................................................13 
Figure 16 Boost configuration test setup schematics ..........................................................................................14 
Figure 17 Boost configuration test setup ..............................................................................................................14 
Figure 18 Boost configuration test thermal measurement result ......................................................................15 
Figure 19 Test waveforms (400Vin, 10kHz, Po=0.8kW)......................................................................................15 
 
List of Tables 
Table 1 GS-EVB-IMS3-665xxB-GS Evaluation Kit Contents .................................................................................5 
Table 2 Compatible IMS daughter power board for driver motherboard GS-EVB-HBDB-IMS....................10 
Table 3 Part numbers and description ...................................................................................................................12 
 

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

1Overview

1.1 Introduction

GS-EVB-HBDB-IMS is a 650 V universal half-bridge motherboard with 2 isolated gate drivers. The daughter

power boards that are compatible with this driver motherboard are available in 2 power levels: 3kW and

6kW. This document mainly focuses on introducing the design and application of the driver motherboard.

For more information about the IMS2 or the IMS3 half-bridge daughter power board, please see its

individual technical manual, available on https://gansystems.com/evaluation-boards/

Compatible IMS2 & IMS3 half-bridge daughter power cards are of Part Numbers:

•GSP66508BHB-EVBIMS2

•GSP66516BHB-EVBIMS2

•GS-EVB-IMS3-66508B-GS

•GS-EVB-IMS3-66516B-GS

1.2 Features and Benefits

•Minimized parasitic inductance for both gate driving loop and power commutation loop

•Isolated gate drive circuits with 200V/ns CMTI

•Plug and play: easy to replace Si/SiC half-bridge power stage in power converters for performance

comparison

1.3 Applications

•Automotive: 3.3kW-22kW on board charger, DC/DC, 3-Φ inverter, high power wireless charger

•Industrial: 3-7kW Photovoltaic Inverter and Energy Storage System (ESS), Motor Drive / VFD

•Server/Datacenter: 3kW Server ACDC power supply

•Consumer: Residential Energy Storage System (ESS)

1.4 Content

The GS-EVB-HBDB-IMS includes the following hardware.

Table 1 GS-EVB-HBDB-IMS Evaluation Kit Contents

Quantity

Description

GS-EVB-HBDB-IMS 650V Universal Half Bridge Isolated Driver Motherboard for

IMS2 and IMS3

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

Figure 1 IMS EVB motherboard GS-EVB-HBDB-IMS

Figure 2 Assembled IMS EVB module with heatsink

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

2Motherboard Technical Specifications

2.1 Half Bridge Isolated Driver Mother Board Overview

This driver motherboard can be purchased individually. It can be used to evaluate both IMS2 and IMS3

daughter power boards in a half-bridge configuration. The plug-and-play design allows the user to easily

integrated the half-bridge GaN configuration into any power stage for evaluation or replace Si/SiC half-

bridge power stage in power converters for performance comparison.

Figure 3 Circuit block diagram of IMS EVB Module

Figure 4 Labelled driver motherboard

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

2.2 Gate Driver Circuit

Figure 5 Gate driver circuit (Silicon Labs P/N: Si8271)

A low-cost isolated gate driver circuit is used in the IMS EVB driver motherboard for each GaN device,

which is shown in Figure 5. Essential components are listed below:

oU3 is the isolated gate driver (Silicon Labs P/N: Si8271)

oU1, T1, D2, C2, C3, C8, and IC1 are the isolated push-pull power supply for the gate driver;

after the LDO chip IC1, the output is divided to +6/-3V to power the gate driver.

oR2 and R3 are gate turn-on and off resistors.

2.3 5V Input and External PWM Signals Input

Figure 6 External 5V and PWM signals connector pin

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

The gate driver circuit on the IMS driver motherboard is powered from a 5V DC source, through the 5V

connector pin. The PWM signals of both GaN devices come from the external PWM, also through the PWM

connector pin. The deadtime of PWM signals is required and should be provided from an external source.

2.4 Temperature Monitoring Hole

A hole is located on the center of the low-side GaN E-mode to assist with the temperature monitoring

during operation. A thermal camera can be used to monitor the case temperature through the temperature

monitoring hole. The temperature measured at the center of GaNPX® package will be close to the TJ.

NOTE: Thermal performance of the transistors is dependent on a number of factors including circuit

configuration, ambient temperature, airflow, and heatsinking. The user is responsible for monitoring the

temperature of the devices to ensure operation remains within specification.

2.5 Installation of IMS Half-Bridge Daughter power board

To achieve the lowest power loop parasitics, it is suggested to solder the IMS half-bridge daughter power

board to the IMS EVB driver motherboard. When soldering by hand, it is important to avoid accidental

short circuits caused by unwanted solder connection between the device gate and source, as shown in

figure 7.

Figure 7 Soldering pin guide

2.6 DC Link Decoupling Capacitors

As it is challenging to create a low inductance power loop on a single-layer IMS board, DC decoupling

capacitors are placed on a multi-layer IMS EVB PCB. The power loop path is highlighted below.

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

Figure 8 Cross-section view of IMS assembly showing the power loop path

3IMS Half Bridge Daughter Power Board Options

With the driver motherboard, the evaluation platform can be purchased in 4 different configurations: low

power (3 kW) and high power (6 kW), normal thermal conductivity (3K) and high thermal conductivity

(7K). The ordering options are listed in table 2:

Table 2 Compatible IMS daughter power boards for driver motherboard GS-EVB-HBDB-IMS

CONFIGURATION

IMS2 and IMS3 HALF BRIDGE DAUGHTER

POWER BOARD

3K 3 kW Half Bridge

GSP66508HB-EVBIMS2

3K 6 kW Half Bridge

GSP66516HB-EVBIMS2

7K 3 kW Half Bridge

GS-EVB-IMS3-66508B-GS

7K 6 kW Half Bridge

GS-EVB-IMS3-66516B-GS

Figure 9 Compatible IMS2 daughter power boards

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

Figure 10 Compatible IMS3 daughter power boards

The half-bridge daughter power board is populated with GaN Systems’ GS66516B (bottom-side cooled E-

mode transistor, rated at 650 V / 25 mΩ) or GS66508B (bottom-side cooled E-mode transistor, rated at 650

V / 50 mΩ).

Figure 11 GS66516B and GS66508B GaNPX® packaged GaN E-mode transistor

The main difference between the IMS2 daughter power board and the IMS3 daughter power board is the

thermal conductivity (K factor) of the dielectric layer of the IMS board.

Figure 12 Cross-section view of a single layer IMS board

Using this platform power designers can evaluate the electrical and thermal performance of GaN Systems’

E-mode transistor in high power, high-efficiency applications. The ordering information are listed below:

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

Table 3 Part numbers and description

PART NUMBER

DESCRIPTION

GaN E-mode

GSP66508HB-EVBIMS2

650 V GaN High Power IMS2 Half Bridge

GS66508B

GSP66516HB-EVBIMS2

650 V GaN High Power IMS2 Half Bridge

GS66516B

GS-EVB-IMS3-66508B-GS

650 V GaN High Power IMS3 Half Bridge

GS66508B

GS-EVB-IMS3-66516B-GS

650 V GaN High Power IMS3 Half Bridge

GS66516B

The IMS2 and IMS3 half-bridge daughter power boards are designed for users to gain hands-on experience

in the following ways:

•Evaluate the GaN E-mode performance in any half-bridge based topology, over a range of

operating conditions. This can be done using either the accompanying power motherboard (P/N:

GS-EVB-HBDB-IMS) or with the users’ own board for in-system prototyping.

•Use as a thermal and electrical design reference of the GS66516B or GS66508B GaNPX® package in

demanding high-power and high-efficiency applications.

4Test Results

4.1 Double Pulse Test (GS-EVB-HBDB-IMS + GS-EVB-IMS3-66508B-GS)

•Test condition: VDS = 400V, ID = 30A, VGS = +6V/-3V, L = 37uH, No RC Snubber, TJ=25℃

•Measured peak VDS = 630V and 92 V/ns peak dV/dt

•Reliable hard switching with GS66508B is achieved at full rated current

Figure 13 Double pulse test setup schematics

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

Figure 14 Double pulse test setup

Figure 15 Double pulse test waveforms (400V/30A)

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

4.2 Boost Configuration Test (GS-EVB-HBDB-IMS + GS-EVB-IMS3-66508B-GS)

•Test condition: VIN = 400V, fsw=10kHz, Po=0.8kW, TAMB = 25℃.

•Device case temperature 72℃

Figure 16 Boost configuration test setup schematics

Figure 17 Boost configuration test setup

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

Figure 18 Boost configuration test thermal measurement result

Figure 19 Test waveforms (400Vin, 10kHz, Po=0.8kW)

Ch#1 (blue): Drain-source voltage, 100V/div

Ch#4 (green): Inductor current, 5A/div

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

5GS-EVB-HBDB-IMS Schematics and BoM

GS-EVB-HBDB-IMS motherboard schematics

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

GS-EVB-HBDB-IMS assembly drawing (top layer)

Top Layer

Mid Layer 1

Mid Layer 2

Bottom Layer

GS-EVB-HBDB-IMS PCB layout (4-layer PCB)

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

GS-EVB-HBDB-IMS Bill of Materials (BOM)

Designator

Description

Quantity

Manufacturer

Manufacturer Part Number

C1, C9, C16,

C18

CAP CER 4.7UF 10V X5R 0402

Samsung Electro-

Mechanics

CL05A475MP7NRB8

C2, C3, C4, C8,

C10, C11, C12,

C13, C19, C20,

C21, C22

CAP CER 4.7UF 25V X5R 0603

TDK Corporation

C1608X5R1E475M080AC

C5, C6, C7

CAP CER 0.1UF 630V X7R 2220

KEMET

C2220C104KBRAC7800

C14, C15

CAP CER 68PF 50V C0G/NP0 0603

Samsung Electro-

Mechanics

CL10C680JB8NNNC

D1, D4

DIODE ZENER 6.2V 300MW SOD323

ON Semiconductor

SZMM3Z6V2T1G

D2, D6

DIODE ARRAY SCHOTTKY 30V

SOT323

ON Semiconductor

BAT54SWT1G

IC1, IC3

IC REG LINEAR 9V 100MA SOT89-3

Texas Instruments

UA78L09ACPK

Header, 2.54mm, 6x1, Gold, R/A, TH

Molex

901210766

R1, R13

RES SMD 10K OHM 1% 1/4W 0603

Rohm

Semiconductor

ESR03EZPF1002

R2, R4

RES 10 OHM 5% 1/10W 0402

Panasonic

Electronic

Components

ERJ-U02J100X

R3, R5

RES 1 OHM 5% 1/16W 0402

Stackpole

Electronics Inc

RMCF0402JT1R00

R6, R9

RES SMD 49.9K OHM 0.5% 1/10W

0603

Stackpole

Electronics Inc

RNCF0603DTE49K9

R7, R12

RES SMD 49.9 OHM 1% 1/10W 0603

Stackpole

Electronics Inc

RMCF0603FT49R9

T1, T2

Transformer, 475uH, SMT

Würth Elektronik

760390014

TP1, TP2, TP3

CONN PC PIN CIRC 0.040DIA GOLD

Mill-Max

Manufacturing

Corp.

3620-2-32-15-00-00-08-0

U1, U2

IC TRANSFORMER DRIVER 6SOT-23

Texas Instruments

SN6505BDBVR

U3, U4

DGTL ISO 2.5KV GATE DRVR 8SOIC

Silicon Labs

SI8271AB-IS /

SI8271GB-IS /

Si8271GB-ISR

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

Evaluation Board/kit Important Notice

GaN Systems Inc. (GaN Systems) provides the enclosed product(s) under the following AS IS conditions:

This evaluation board/kit being sold or provided by GaN Systems is intended for use for ENGINEERING

DEVELOPMENT, DEMONSTRATION, and OR EVALUATION PURPOSES ONLY and is not considered by GaN

Systems to be a finished end-product fit for general consumer use. As such, the goods being sold or provided are

not intended to be complete in terms of required design-, marketing-, and/or manufacturing-related protective

considerations, including but not limited to product safety and environmental measures typically found in end

products that incorporate such semiconductor components or circuit boards. This evaluation board/kit does not fall

within the scope of the European Union directives regarding electromagnetic compatibility, restricted substances

(RoHS), recycling (WEEE), FCC, CE or UL, and therefore may not meet the technical requirements of these directives,

or other related regulations.

If this evaluation board/kit does not meet the specifications indicated in the Technical Manual, the board/kit may be

returned within 30 days from the date of delivery for a full refund. THE FOREGOING WARRANTY IS THE

EXCLUSIVE WARRANTY MADE BY THE SELLER TO BUYER AND IS IN LIEU OF ALL OTHER WARRANTIES,

EXPRESSED, IMPLIED, OR STATUTORY, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS

FOR ANY PARTICULAR PURPOSE. EXCEPT TO THE EXTENT OF THIS INDEMNITY, NEITHER PARTY SHALL

BE LIABLE TO THE OTHER FOR ANY INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES.

The user assumes all responsibility and liability for proper and safe handling of the goods. Further, the user

indemnifies GaN Systems from all claims arising from the handling or use of the goods. Due to the open construction

of the product, it is the user’s responsibility to take any and all appropriate precautions with regard to electrostatic

discharge.

No License is granted under any patent right or other intellectual property right of GaN Systems whatsoever. GaN

Systems assumes no liability for applications assistance, customer product design, software performance, or

infringement of patents or any other intellectual property rights of any kind.

GaN Systems currently services a variety of customers for products around the world, and therefore this transaction

is not exclusive.

Please read the Technical Manual and, specifically, the Warnings and Restrictions notice in the Technical Manual

prior to handling the product. Persons handling the product(s) must have electronics training and observe good

engineering practice standards.

This notice contains important safety information about temperatures and voltages. For further safety concerns,

please contact a GaN Systems’ application engineer.

GS-EVB-HBDB-IMS

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

& IMS3

Technical Manual

____________________________________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page 19

In Canada:

GaN Systems Inc.

1145 Innovation Drive Suite 101

Ottawa, Ontario, Canada K2K 3G8

T +1 613-686-1996

In Europe:

GaN Systems Ltd., German Branch

Terminalstrasse Mitte 18,

85356 München, Germany

T +49 (0) 8165 9822 7260

In the United States:

GaN Systems Corp. 2723 South State Street,

Suite 150, Ann Arbor, MI. USA 48104 T +1

248-609-7643

www.gansystems.com

Important Notice –Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized

or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in

personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of

performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of

intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein

is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or