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Gan Systems GSWP300W-EVBPA User manual

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GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 1
Please refer to the Evaluation Board/Kit Important Notice on page 27
GSWP300W-EVBPA
300W GaN E-HEMT Wireless Power Transfer
Evaluation Board, Optimized for Class EF2
Amplifiers
Technical Manual
Visit www.gansystems.com for the latest version of this technical manual.
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 2
Please refer to the Evaluation Board/Kit Important Notice on page 27
DANGER!
Electrical Shock Hazard - Hazardous high voltage may be present on the
board during the test and even brief contact during operation may result in
severe injury or death. Follow all locally approved safety procedures when
working around high voltage.
Never leave the board operating unattended. After it is de-energized,
always wait until all capacitors are discharged before touching the board.
This board should be handled by qualified personnel ONLY.
PCB surface and devices can become hot. Contact may cause burns. Do not
touch!
CAUTION
This product contains parts that are susceptible to damage by electrostatic
discharge (ESD) or exposure to voltages in excess of the specified voltage.
Always follow ESD prevention procedures when handling the product.
Avoid applying excessive voltages to the power supply terminals or signal
inputs or outputs, always connected to the load during the test on-going.
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 3
Please refer to the Evaluation Board/Kit Important Notice on page 27
Introduction to Magnetic Resonant Wireless Power Transfer
Recent technological advances in power semiconductors are enabling Wireless Power Transfer
(WPT) as a technically and commercially viable option for charging and powering equipment
across a wide range of markets, applications, and power levels.
Inductive charging has been in use for a number of years, however, it’s burdened with limitations
that restrict it to low power applications with tightly controlled alignment between the transmitter
and receiver.
A more advantageous approach, magnetic resonant charging, addresses these shortcomings by
using a high frequency oscillating magnetic field to transfer energy. The benefits that magnetic
resonant charging offers include variable spacing between the transmitter and receiver, the ability
to charge through materials such as a desk or an enclosure, one-to-many charging, ease of
installation, suitability for high power levels, and fast charging. Table 1 provides a comparison
between inductive charging and magnetic resonant charging.
GaN E-HEMTS are a key enabler of magnetic resonant charging because their extremely fast
switching speeds, on the order of a few nanoseconds, result in very low switching losses. This
allows them to operate efficiently at very high frequencies, such as the 6.78MHz that is commonly
used for magnetic resonant charging.
Table 1 A comparison of Inductive charging and Magnetic Resonant charging
Charging technology
Inductive
Magnetic Resonant
Frequency range
80-300kHz
6.78MHz
Max transfer range
5mm
50mm
Multi-device
No
Yes, at different power levels
Spatial Freedom
Low
High
Power Range
Low & limited
30W max
Broad & versatile
50W to 20kW+
Efficiency
Limited to 80%
High: up to 95%
A high-level block diagram of a resonant wireless power transfer system is shown in Figure 1. The
transmit section is composed of a power amplifier, an impedance matching circuit and a transmit
coil. High frequency energy is transferred wirelessly at 6.78MHz to the receive circuit which is
comprised of a receive coil, an impedance matching circuit and a rectifier.
The GSWP300W-EVBPA evaluation board is designed to support and expedite the innovation of
WPT systems by providing the Power Amplifier, the most challenging aspect of the system design.
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 4
Please refer to the Evaluation Board/Kit Important Notice on page 27
Figure 1 - A magnetic resonant wireless power transfer design.
Evaluation board overview
The GSWP300W-EVBPA uses GaN Systems’ GS66508B E-HEMTs in a 6.78MHz Class EF2 power
amplifier. The GS66508Bs are used with the integrated high-speed pSemi PE29102 gate driver in a
push-pull configuration. The outputs of the PE29102 are capable of providing switching transition
speeds in the nano-seconds range for hard switching applications.
This Technical Manual includes a circuit description, a quick-start guide and measurement results.
Evaluation Kit Contents and Requirements
Kit Contents
The GSWP300W-EVBPA includes the following hardware for evaluating the GaN E-HEMT 300W
power amplifier.
Table 2 GSWP300W-EVBPA Evaluation Kit Contents
Quantity
Description
1
GaN E-HEMT GS66508B WPT PA evaluation board assembly
1
WPT PA heatplate
1
WPT PA EMC shield
2
2 pins DC cord
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 5
Please refer to the Evaluation Board/Kit Important Notice on page 27
Hardware Requirements
In order to evaluate the performance of the evaluation board, the following equipment is required:
•
DC power supply 100V/15A
•
TEK scope with current probe TCM0030A
•
Fluke 87 multimeter for input current
•
50dB 500W attenuator as load
•
Spectrum analyzer
•
Power meter
•
Thermal meter
Evaluation Board Assembly Overview
The evaluation board (EVB) is assembled with two GS66508B E-HEMT transistors and two PE29102
GaN E-HEMT drivers. Headers are included for monitoring the signal input, signal output, power
connections and detection monitoring signals. Probe points are included for waveform
measurements. Provision has been made for a single, suitable heatsink to be fastened against the
two E-HEMTs, using the two holes in the center of the bottom heatplate.
Figure 2 •Top side of GSWP300W-EVBPA Evaluation Board Assembly
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 6
Please refer to the Evaluation Board/Kit Important Notice on page 27
Figure 3 •Bottom side of GSWP300W-EVBPA Evaluation Board Assembly, showing copper coins
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 7
Please refer to the Evaluation Board/Kit Important Notice on page 27
Block Diagram
The block diagram of the evaluation board is provided in Figures 4 through 6.
Figure 4 • GSWP300W-EVBPA WPT Push-Pull EVB Block Diagram
Note: The coil in Figure 4 is not included in the EVB.
Figure 5• GSWP300W-EVBPA WPT Class EF2 PA Block Diagram
Note: The switch devices are GaN Systems’ GS66508B E-HEMTSs
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 8
Please refer to the Evaluation Board/Kit Important Notice on page 27
Figure 6 • GSWP300W-EVBPA WPT driver Block Diagram
Figure 7 •PE29102 Dead-time Waveforms and Duty Cycle Setting
Figure 8 •Dead Time vs Dead Time Resistor
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 9
Please refer to the Evaluation Board/Kit Important Notice on page 27
Circuit Description
The Push-Pull circuit is comprised of two single ended PAs which share a common supply, however;
the impedance matching and EMI filters are separated.
The high-side E-HEMTs are powered by a DC source, referred to as the HV supply. It is connected
through J32 or J28. The voltage of this source not exceed 100VDC.
The low-voltage logic circuitry runs off a 3.3VDC voltage regulator, U88, which is powered from a
+5VDC source connected through JP35 or J28. The +5VDC rail also feeds two PE29102 drivers U86 and
U90, which are driven independently by U87, a common logic D-type flip/flop. U87 has a
frequency divider configuration, which is driven by a crystal oscillator Y8 at a frequency of
13.56MHz. The two PE29102 gate drives are capable of 6V operation.
The PA can be configured to operate in a number of different modes, which include
•Push-pull configuration with an EMI filter
•Single ended mode
•Operation without an EMI filter
•Operation with an external oscillator signal input. Users can run multiple PAs together at
the same frequency for high power operation.
Detailed operation procedures and setup for these alternative configurations are provided in the
section titled “quick start guide”.
The PA includes an over-temperature protection circuit. Temperature sensor U9, placed close to the
GS66508B E-HEMTs, monitors their temperature. In an over-temperature condition, the PE29102A
driver will be disabled through U133 and stop driving the E-HEMTs. The design also includes
circuitry to protect against over-current, and load mismatch.
The evaluation board includes an EMI filter, comprised of one low pass filter and one notch filter.
The output of PA can be configured, through jumpers, to operate either with or without an EMI
filter. The detailed jumper and SMA connector configurations are listed in Table 4
For convenience, test points are provided to monitor and measure the electrical signals. A
description of the test points and diagram of their location is provided in Table 5.
The PA also includes a Micro Controller Unit (MCU) monitor interface header, J1. The signals
available through J1 can be used to control the PA system for close loop in the WPT system. A
definition of the signals available on header J1 is provided in Figure 9.
GSWP300W-EVBPA
GaN E-HEMT Wireless Power Transfer Evaluation Board
Technical Manual
_____________________________________________________________________________________________________________________
GSWP300W-EVBPA Rev 220215 © 2022 GaN Systems Inc. www.gansystems.com 10
Please refer to the Evaluation Board/Kit Important Notice on page 27
Figure 9 •MCU interface definition. Signals on J1
The PA connectivity is depicted in Figure 10 and includes the RF input and output, the DC biases
and the MCU monitor interface.
Figure 10 •Circuit Connectivity
Protection Circuit
The PA includes circuitry to protect against input DC overcurrent, device over temperature, output
RF overvoltage and Voltage Standing Wave Ratio (VSWR) protection. The protection signals are
combined by U133, a 3 inputs OR gate logic chip, and will shut the driver down under a fault
condition.
Input DC overcurrent protection (OCP): U91 is the DC current sensor chip, which can handle a
maximum of 10A. The output of the current sensor ship is a current sense signal that goes thru
buffer OP U122 and is compared to a reference voltage. The reference voltage is set with R101 and
•Monitor signals on J1.
•Pin1: PA GND
•Pin2: 5V Input
•Pin3: output voltage detection
•Pin4: PA HV DC current
•Pin5: 3.3V DC
•Pin6: over voltage and current
•Pin7: output power detection
•Pin8: Temperature sensor voltage
•Pin9: PA HV DC input
•Pin10: Fan control enable