Gan Systems GSP665HPMB-EVBIMS2 User manual

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
GSP665x-EVBIMS2 TM rev. 201021 © 2020 GaN Systems Inc. www.gansystems.com 1
Please refer to the Evaluation Board/Kit Important Notice on page 22
IMS 2 Evaluation Platform
Technical Manual
GSP665HPMB-EVBIMS2
GSP66508HB-EVBIMS2
GSP66516HB-EVBIMS2
Visit www.gansystems.com for the latest version of this technical manual.

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
GSP665x-EVBIMS2 TM rev. 201021 © 2020 GaN Systems Inc. www.gansystems.com 2
Please refer to the Evaluation Board/Kit Important Notice on page 22
DANGER
DO NOT TOUCH THE BOARD WHEN IT IS ENERGIZED AND ALLOW ALL
COMPONENTS TO DISCHARGE COMPLETELY PRIOR HANDLING THE BOARD.
HIGH VOLTAGE CAN BE EXPOSED ON THE BOARD WHEN IT IS CONNECTED
TO POWER SOURCE. EVEN BRIEF CONTACT DURING OPERATION MAY
RESULT IN SEVERE INJURY OR DEATH.
Please sure that appropriate safety procedures are followed. This evaluation kit
is designed for engineering evaluation in a controlled lab environment and
should be handled by qualified personnel ONLY. Never leave the board
operating unattended.
WARNING
Some components can be hot during and after operation. There are NO built-
in electrical or thermal protection on this evaluation kit. The operating voltage,
current and component temperature should be monitored closely during
operation to prevent device damage.
CAUTION
This product contains parts that are susceptible to damage by electrostatic
discharge (ESD). Always follow ESD prevention procedures when handling the
product.

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
GSP665x-EVBIMS2 TM rev. 201021 © 2020 GaN Systems Inc. www.gansystems.com 3
Please refer to the Evaluation Board/Kit Important Notice on page 22
Contents
1Overview...................................................................................................................................................... 5
1.1 Introduction ........................................................................................................................................ 5
1.2 IMS 2 Evaluation Platform Overview................................................................................................6
1.2.1 Technical Description..................................................................................................................... 6
1.2.2 IMS Board thermal design ............................................................................................................. 7
1.3 IMS 2 Half Bridge Board Design........................................................................................................ 9
1.4 IMS 2 EVB Mother Board ................................................................................................................. 10
1.4.1 Gate Driver Circuit ....................................................................................................................... 11
1.4.2 5V input......................................................................................................................................... 11
1.4.3 Temperature monitoring holes .................................................................................................... 11
1.4.4 External PWM Signals Input........................................................................................................ 12
1.4.5 Installation of IMS 2 Half Bridge Power Board .......................................................................... 12
1.4.6 DC link decoupling capacitors..................................................................................................... 12
1.4.7 Operation modes .......................................................................................................................... 13
2Test Results................................................................................................................................................. 14
2.1 Double pulse test (GSP665HPMB-EVBIMS2 + GSP66508HB-EVBIMS2) ...................................... 14
2.2 Full power emulation test (GSP665HPMB-EVBIMS2 + GSP66508HB-EVBIMS2) ........................ 15
3Appendix.................................................................................................................................................... 17
3.1 IMS 2 Half Bridge Power Board....................................................................................................... 17
3.2 IMS 2 EVB Mother board - GSP665HPMB-EVBIMS2..................................................................... 19

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
GSP665x-EVBIMS2 TM rev. 201021 © 2020 GaN Systems Inc. www.gansystems.com 4
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List of Figures
Figure 1 IMS 2 EVB board and IMS 2 half bridge power module with heatsink ............................................ 5
Figure 2 - GS66516B and GS66508B GaNPX® packaged E-HEMTs................................................................. 6
Figure 3 Cross-section view of a single layer IMS board ..................................................................................7
Figure 4 Comparison of Junction to Heatsink thermal resistance (RthJ-HS) (Estimated based on GS66516B) . 8
Figure 5 IMS 2 half bridge power board (GSP66508HB-EVBIMS2)................................................................. 9
Figure 6 Circuit block diagram of IMS 2 EVB board....................................................................................... 10
Figure 7 GSP665HPMB-EVBIMS2.................................................................................................................... 10
Figure 8 Gate driver circuit............................................................................................................................... 11
Figure 9 External PWM signals connector....................................................................................................... 12
Figure 10 - Cross section view of IMS assembly showing the power Loop path .......................................... 12
Figure 11 Double pulse test setup .................................................................................................................... 14
Figure 12 Double pulse test waveforms (400V/30A)....................................................................................... 14
List of Tables
Table 1 Ordering configuration and part numbers ........................................................................................... 6
Table 2 Part numbers and Description............................................................................................................... 6
Table 3 Performance comparison of 3 thermal design options for SMT power devices................................. 8
Table 4 Evaluation Platform Configurations .................................................................................................. 13

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
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1Overview
1.1 Introduction
A frequent challenge for power designers is to engineer a product that has excellent power density and
reduced cost of the system simultaneously.
This IMS evaluation platform demonstrates an effective way to improve heat transfer, to increase power
density and reduce system cost. An Insulated Metal Substrate PCB (IMS PCB) is used to cool GaN Systems’
bottom-side cooled power transistors. An IMS PCB is also known as Metal Core/Aluminum PCB.
Examples of applications that have successfully used this approach include:
•Automotive: 3.3kW-22kW on board charger, DC/DC, 3-Φinverter, high power wireless charger
•Industrial: 3-7kW Photovoltaic Inverter and Energy Storage System (ESS), Motor Drive / VFD
•Server/Datacenter: 3kW Server ACDC power supply.
•Consumer: Residential Energy Storage System (ESS)
This evaluation platform consists of two parts: the IMS 2 EVB board (mother board) and the IMS 2 half
bridge power board, as show in Figure 1. The IMS 2 half bridge power board is available in 2 power levels:
3kW and 6kW.
A suitable heatsink is included for lower power applications. For higher power applications additional
heatsinking may be required. To prevent device damage, ensure adequate heatsinking through design and
by monitoring the component temperatures during operation.
To assemble a heatsink, apply thermal grease to the heatsink / IMS board interface before screwing the
units together. Enough thermal grease should be applied so that a small amount extrudes on all four sizes
as the screws are tightened. Wipe the assembly clean.
Figure 1 IMS 2 EVB mother board and IMS 2 half bridge power module with heatsink
With these building blocks, the evaluation platform can be purchased in 4 different configurations: low
power and high power, half bridge and full bridge. Table 1 lists the ordering options.

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
GSP665x-EVBIMS2 TM rev. 201021 © 2020 GaN Systems Inc. www.gansystems.com 6
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Table 1 Ordering configuration and part numbers
CONFIGURATION
IMS 2 HALF BRIDGE MODULE
IMS 2 EVB Mother Board
3 kW Half Bridge
QTY 1 - GSP66508HB-EVBIMS2
QTY 1: GSP665HPMB-EVBIMS2
6 kW Half Bridge
QTY 1 - GSP66516HB-EVBIMS2
3 kW Full Bridge
QTY 2 - GSP66508HB-EVBIMS2
6 kW Full Bridge
QTY 2 - GSP66516HB-EVBIMS2
Table 2 Part numbers and Description
PART NUMBER
DESCRIPTION
GaN E-HEMT
GSP665HPMB-EVBIMS2
Optimized Dual HB Gate Driver Motherboard with
isolated driver and PSU for use with GSP66516HB-
EVBIMS2 or GSP66508HB-EVBIMS2 half bridge boards
N/A
GSP66508HB-EVBIMS2
Optimized IMS 2 Half Bridge based on GS66508B
GaNPX® bottom-cooled E-HEMTs
GS66508B
GSP66516HB-EVBIMS2
Optimized IMS 2 Half Bridge based on GS66516B
GaNPX® bottom-cooled E-HEMTs
GS66516B
1.2 IMS 2 Evaluation Platform Overview
1.2.1 Technical Description
Using this platform, power designers can evaluate the performance of GaN Systems’ E-HEMTs
(Enhancement mode High Electron Mobility Transistors) in high power, high efficiency applications. The
IMS 2 half bridge power board is populated with GaN Systems’GS66516B (bottom-side cooled E-HEMT,
rated at 650 V / 25 mΩ) or GS66508B (bottom-side cooled E-HEMT, rated at 650 V / 50 mΩ). The embedded
GaNPX® SMD package has the following features:
•Large power source/thermal pad for improved thermal dissipation.
•Bottom-side cooled packaging for conventional PCB or advanced IMS/Cu inlay thermal design.
•Ultra-low inductance for high frequency switching.
a) GS66516B b) GS66508B
Figure 2 - GS66516B and GS66508B GaNPX® packaged E-HEMTs

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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The IMS 2 half bridge power board is designed for users to gain hands-on experience in the following ways:
•Evaluate the GaN E-HEMT performance in any half bridge based topology, over a range of
operating conditions. This can be done using either the accompanying power motherboard (P/N:
GSP665HPMB-EVBIMS2) or with the users’ own board for in-system prototyping.
•Use as a thermal and electrical design reference of the GS66516B or GS66508B GaNPX® package in
demanding high-power and high efficiency applications.
1.2.2 IMS Board thermal design
An IMS board assembly uses metal as the PCB core, to which a dielectric layer and copper foil layers are
bonded. The metal PCB core is often aluminum. The copper foil layers can be single or double-sided. An
IMS board offers superior thermal conductivity to standard FR4 PCB. It’s commonly used in high power,
high current applications where most of heat is concentrated in a small footprint SMT device.
Figure 3 Cross-section view of a single layer IMS board
As high-speed Gallium Nitride power devices are adopted widely, the industry is trending away from
through-hole packaging (TH), towards surface mount packaging (SMT). Traditional TH devices, such as
the TO-220, are no longer the appropriate choice because their high parasitic inductance and capacitance
negate the performance benefits offered by GaN E-HEMTs. SMT packaging, such as PQFN, D2PAK and
GaN Systems’GaNPX®, by comparison, offer low inductance and low thermal impedance, enabling
efficient designs at high power and high switching frequency.
Thermal management of SMT power transistors must be approached differently than TH devices. TO
packages are cooled by attaching them to a heatsink, with an intermediary Thermal Interface material (TIM)
sheet for electrical high voltage insulation. The traditional cooling method for SMT power devices is to use
thermal vias tied to multiple copper layers in a PCB. The IMS board presents designers with another option
which is especially useful for high power applications. The IMS board has a much lower junction to
heatsink thermal resistance (RthJ-HS) than FR4 PCBs, for efficient heat transfer out of the transistor. As well,
assembly on an IMS board has lower assembly cost and risk than the TH alternative. The manual assembly
process of a TO package onto a heatsink is costly and prone to human error.
Copper Foil:
• Typ. 1-4oz (35-140um) up to 10oz
Dielectric Layer:
• Electrical insulation
• Typ. 30-200um thickness
• Thermal conductivity: 1-3W/mK
Metal Substrate/Base
• Electrically isolated
• Aluminum or copper
SMT Power Package

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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Table 3 compares 3 different design approaches for cooling discrete SMT power devices. While the cost is
lower for a FR4 PCB cooling with thermal vias, the IMS board offers the best performance for thermal
management. Figure 4 provides a quantitative comparison of the thermal resistance for the 3 design
options. The IMS board clearly comes out ahead.
Table 3 Performance comparison of 3 thermal design options for SMT power devices
IMS PCB
Thermal
grease
IMS
Board
Thermal
resistance
Good
Better
Best
Electrical
Insulation
No, additional TIM
needed
No, additional TIM needed
Yes
Cost
Lowest
High
Low
Advantages
•Standard process
•Lowest cost
•Layout flexibility
•Layout flexibility
•Improved thermal
compared to thermal vias
•Lowest thermal resistance
•Electrically isolated
Design
challenges
•High PCB thermal
resistance
•Cu-inlay surface
coplanarity
•High TIM thermal
resistance
•Layout limited to 1 layer
•Parasitic inductance
•Coupling capacitances to
the metal substrate
Figure 4 Comparison of Junction to Heatsink thermal resistance (RthJ-HS) (Estimated based on GS66516B)
FR4 PCB Cooling with Vias
TIM
FR4 PCB with Cu inlay
Cu-inlay
TIM

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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The following additional measures are taken to optimize the design further.
•The IMS 2 evaluation platform is implemented as a two-board asssembly. The gate drive circuitry
is assembled on the GSP665HPMB-EVBIMS2, a multi-layer FR4 PCB mother board. This includes
the gate driver ICs, an isolated push-pull power supply to power the driver IC, and DC decoupling
capacitors. The GaN E-HEMTs are mounted to the IMS half bridge board (GSP66508HB-EVBIMS2
and GSP66516B-EVBIMS2). This approach addresses the shortcomings of implementing the design
on a single layer IMS board.
•While a large copper area is preferred to maximize heat spreading and handle high current, the
area of copper at the switching node (high dv/dt) needs to be minimized to reduce the parasitic
coupling capacitance to the metal substrate. An IMS board with thicker dielectric layer (100um) is
chosen on this design to further reduce this effect.
1.3 IMS 2 Half Bridge Board Design
Figure 5 IMS 2 half bridge power board (GSP66508HB-EVBIMS2)
The IMS 2 half bridge power board is populated with the following components:
•Q1 and Q2: GS66516B or GS66508B E-HEMTs in a half bridge configuration.
o6kW GSP66516HB-EVBIMS2: Q1/Q2 GS66516B.
o3kW GSP66508HB-EVBIMS2: Q1/Q2 GS66508B.
•J1, J2, J3:
oConnector Header Surface Mount 12 position 0.050" (1.27mm) (Samtec Inc., P/N: FTS-106-
02-F-DV).
oThese terminals are designed to carry the main current and gate signals.

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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1.4 IMS 2 EVB Mother Board
GaN Systems offers a high-power IMS 2 evaluation board that can be purchased separately. The ordering
part number is GSP665HPMB-EVBIMS2. It can be used as a platform for evaluating the IMS board in any
half or full bridge topology.
Figure 6 Circuit block diagram of IMS 2 EVB board
Figure 7 GSP665HPMB-EVBIMS2
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
5V
Power
Supply
Ext.
PWM
Signals
Load
PHA
PHB
IMS 2 EVB Mother Board
IMS 2 Half Bridge Power Board

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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1.4.1 Gate Driver Circuit
Figure 8 Gate driver circuit
A low cost isolated gate driver circuit is used in the IMS 2 EVB board for each GaN device, which is shown
in Figure 8:
oU1 is the isolated gate driver (Silicon Labs P/N: Si8271)
oU2, T1, D1, C6, C7, C8 and U3 are the isolated push-pull power supply for the gate driver;
after the LDO chip U3, the output is divided to +6/-3V to power the gate driver.
oR1 and R2 are gate turn-on and off resistors.
1.4.2 5V input
The gate driver circuit on the IMS 2 EVB mother board is powered from a 5V DC source, through connector
J2.
1.4.3 Temperature monitoring holes
4 holes are located on the center of 4 GaN E-HEMTs to assist with the temperature monitoring during
operation. A thermal camera can be used to monitor the case temperature through these holes. The
temperature measured at the center of GaNPX® package will be close to the TJ.
NOTE: Thermal performance of the transistors is dependent on a number of factors including circuit
configuration, ambient temperature, airflow, and heatsinking. The user is responsible for monitoring the
temperature of the devices to ensure operation remains within specification.

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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1.4.4 External PWM Signals Input
Figure 9 External PWM signals connector
The PWM signals of all four GaN devices come from the external PWM connector J1, as shown in Figure 9.
The deadtime of PWM signals are required and should be provided from the external source.
1.4.5 Installation of IMS 2 Half Bridge Power Board
To achieve the lowest power loop parasitics, it is suggested to solder the IMS 2 half bridge power board to
the IMS 2 EVB motherboard.
1.4.6 DC link decoupling capacitors
As it is challenging to create low inductance power loop on single-layer IMS board, DC decoupling
capacitors are placed on multi-layer IMS 2 EVB PCB. The power loop path is highlighted as below.
Figure 10 - Cross section view of IMS assembly showing the power Loop path

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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1.4.7 Operation modes
The Evaluation Platform can be configured into different topologies and operation modes as shown below
Table 4 Evaluation Platform Configurations
HALF BRIDGE
FULL BRIDGE
BOOST MODE
Double Pulse Test
Full Bridge LLC
Synchronous Boost DC/DC
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
CO
Cr
RL
Lr
Gate
Driver
Vdc+
PHA
PHB
Vdc+
PGND
L
C
DC
Power
Source
RL
PGND
Synchronous Buck DC/DC
Phase Shift Full Bridge
Totem Pole PFC
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
L
CRL
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
CO
RL
Lr
LO
Gate
Driver
Vdc+
PHA
PHB
Vdc+
PGND
L
AC
Power
Source
RL
PGND
Half Bridge LLC
Full Bridge Inverter
Interleaved Totem Pole PFC
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
CO
Cr
RL
Lr
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
CO
RL
LO
Gate
Driver
Vdc+
PHA
PHB
Vdc+
PGND
L1AC
Power
Source
RL
PGND
L2
Single Phase Half Bridge Inverter
DUAL ACTIVE BRIDGE
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
CO
RL
LO
Dual Active Bridge (with 2 mother boards)
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
Lr
Gate
Driver
Vdc+
PHA
PHB
Vdc+
PGND
RL
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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2Test Results
2.1 Double pulse test (GSP665HPMB-EVBIMS2 + GSP66508HB-EVBIMS2)
•Test condition: VDS = 400V, ID = 30A, VGS = +6V/-3V, L = 37uH, No RC Snubber, TJ=25℃
•Measured peak VDS = 550V and 95.5V/ns peak dV/dt
•Reliable hard switching with GS66508B is achieved at full rated current
Figure 11 Double pulse test setup
Figure 12 Double pulse test waveforms (400V/30A)
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
IL
VSW

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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2.2 Full power emulation test (GSP665HPMB-EVBIMS2 + GSP66508HB-EVBIMS2)
•Test condition: VIN = 400V, fsw=500kHz, Po=1kW, TAMB = 25℃.
•Device case temperature 57℃
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
Figure 13 Full Power Emulation Test Setup
Figure 14 Full power emulation test thermal measurement result

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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Ch#3 (purple): Inductor current, 2A/div
Ch#4 (green): Switching node Voltage, 250V/div
Figure 15 Test waveforms (400Vin, 500kHz, Po=1.2kW)

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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GSP665x-EVBIMS2 TM rev. 201021 © 2020 GaN Systems Inc. www.gansystems.com 17
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3Appendix
3.1 IMS 2 Half Bridge Power Board
IMS 2 half bridge power board schematics
(for GSP66508HB-EVBIMS2)
IMS 2 half bridge power board schematics
(for GSP66516HB-EVBIMS2)
IMS 2 half bridge power board assembly
drawing (for GSP66508HB-EVBIMS2)
IMS 2 half bridge power board assembly
drawing (for GSP66516HB-EVBIMS2)
G2
SS2
G2
SS2
S

GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
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IMS 2 half bridge power board PCB layout top
layer (for GSP66508HB-EVBIMS2)
IMS 2 half bridge power board PCB layout top
layer (for GSP66516HB-EVBIMS2)
IMS 2 Half Bridge Power Board Bill of Materials (BOM)

GSP665x-EVBIMS2
High Power IMS Evaluation Platform
Technical Manual
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3.2 IMS 2 EVB Mother board - GSP665HPMB-EVBIMS2
IMS 2 EVB mother board schematics –GSP665HPMB-EVBIMS2

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High Power IMS Evaluation Platform
Technical Manual
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IMS 2 EVB mother board assembly drawing (top layer) - GSP665HPMB-EVBIMS2
Top Layer
Mid Layer 1
This manual suits for next models
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