Murata GRM0335C1HR30WD01 Series User manual

CHIP MONOLITHIC CERAMIC CAPACITOR
GRM0335C1HR30WD01_ (0201, C0G, 0.3pF, 50Vdc)
_: packaging code Reference Sheet
1.Scope
2.MURATA Part NO. System
(Ex.)
3. Type & Dimensions
(Unit:mm)
4.Rated value
5.Package
Product specifications in this catalog are as of Aug.3,2011,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
0.2 min.
(8) Packaging
This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment.
±0.05 pF
-55 to 125 °C
0±30 ppm/°C
25 to 125 °C
(25 °C)
(3) Temperature Characteristics
(Public STD Code):F(EIA)
e
Specifications and Test
Methods
(Operationg
Temp. Range)
g
Temp. coeff
or Cap. Change
(5) Nominal
Capacitance
(6)
Capacitance
Tolerance
50 Vdc
0.3 pF
Temp. Range
(Ref.Temp.)
mark
0.3±0.03
(4)
DC Rated
Voltage
0.1 to 0.2
(1)-2 W
0.3±0.03
(2) T
Packaging Unit
(1)-1 L
0.6±0.03
D
f180mm Reel
PAPER
15000 pcs./Reel
J
f330mm Reel
PAPER
50000 pcs./Reel
B
Bulk Bag
1000 pcs./Bag
C
Bulk Case
50000 pcs./Case
(1)L/W
Dimensions
(2)T
Dimensions
(3)Temperature
Characteristics
(4)DC Rated
Voltage
(5)Nominal
Capacitance
(6)Capacitance
Tolerance
(8)Packaging
Code
(7)Murata’s
Control Code
T
L
W
e
e
g
GRM 03 35C 1H R30 W D01 D
1GRM0335C1HR30WD01-01

SPECIFICATIONS AND TEST METHODS
No.
Item
Specification
Test Method
Temperature
Compensating Type
High Dielectric Type
1
Operating Temperature
Range
-55C to +125C
R6 : -55C to + 85C R7 : -55C to +125C
C8 : -55C to + 105C E4 : 10C to + 85C
F5 : -30C to + 85CL8/R9 : -55C to +150C
Reference Temperature : 25C
2
Rated Voltage
See the previous pages
The rated voltage is defined as the maximum voltage which may be
applied continuously to the capacitor. When AC voltage is
superimposed on DC voltage, VP-P or VO-P, whichever is larger,
should be maintained within the rated voltage range.
3
Appearance
No defects or abnormalities
Visual inspection.
4
Dimension
Within the specified dimensions
Using calipers or Microscope. (GRM02 size is based on Microscope)
5
Dielectric
Strength
No defects or abnormalities
No failure should be observed when 300% of the rated voltage (C
to 7U and 1X) or 250% of the rated voltage (R6, R7,C8,E4 and F5) is
applied between the terminations for 1 to 5 seconds, provided the
charge/ discharge current is less than 50mA.
6
Insulation Resistance
More than 10,000Mor 500∙F
(whichever is smaller)
The insulation resistance should be measured with a DC voltage not
exceeding the rated voltage at 25C and 75%RH max. and within 2
minutes of charging.
7
Capacitance
Within the specified tolerance
The capacitance/Q/D.F. should be measured at 25C at the
frequency and voltage shown in the table.
8
Q/
Dissipation Factor
(D.F.)
30pF and over :
Q ≧1000
30pF and below :
Q ≧400+20C
C:Nominal
Capacitance (pF)
[R6,R7,C8,L8]
W.V.:100V : 0.025max.(C < 0. 068F)
: 0.05max.(C ≧0.068F)
W.V.:25/50V :0.025max.
W.V.:16/10V :0.035max.
W.V.:6.3V/4V :0.05max. (C < 3.3F)
:0.1max.(C ≧3.3F)
[R9]W.V.:50V: 0.05max.
[E4] W.V.:25Vmin :0.025max.
[F5] W.V.:25Vmin.
:0.05max. (C 0.1F) :0.09max. (C ≧0.1F)
W.V.:16/10V:0.125max. W.V.:6.3V:0.15max.
9
Capacitance
Temperature
Character-ist
ics
Capacitance
Change
Within the specified
tolerance.
(Table A -1)
The capacitance change should be measured after 5 min. at
each specified temperature stage.
(1)Temperature Compensating Type
The temperature coefficient is determind using the capacitance
measured in step 3 as a reference. When cycling the temperature
sequentially from step1 through 5 (C+25C to +125C , other
temp. coeffs.:+25C to +85C ) the capacitance should be within
the specified tolerance for the temperature coefficient and
capacitance change as Table A-1. The capacitance drift is
caluculated by dividing the differences betweeen the maximum and
minimum measured values in the step 1,3 and 5 by the cap value in
step 3.
(2) High Dielectric Constant Type
The ranges of capacitance change compared with the 25C value
over the temperature ranges shown in the table should be within
the specified ranges.
Initial measurement for high dielectric constant type.
Perform a heat treatment at 150+0/-10Cfor one hour
and then set for 24±2 hours at room temperature.
Perform the initial measurement.
Temperature
Coefficent
Within the specified tolerance.
(Table A -1)
Capacitance
Drift
Within ±0.2% or ±0.05 pF
(Whichever is larger.)
Not apply to 1X/25V
10
Adhesive Strength of
Termination
No removal of the terminations or other defect should occur.
Solder the capacitor to the test jig (glass epoxy board) shown in Fig.1
using a eutectic solder. Then apply *10N force in parallel with the test
jig for 10±1sec.
The soldering should be done either with an iron or using the reflow
method and should be conducted with care so that the soldering is
uniform and free of defects such as heat shock
*5N (GR15, GRM18)
2N (GR03),1N(GR02)
(in:mm)
Type
a
b
c
GR02
0.2
0.56
0.23
GR03
0.3
0.9
0.3
GR15
0.4
1.5
0.5
GRM18
1.0
3.0
1.2
GRM21
1.2
4.0
1.65
GRM31
2.2
5.0
2.0
GRM32
2.2
5.0
2.9
GRM43
3.5
7.0
3.7
GRM55
4.5
8.0
5.6
c
Baked electrode or
copper foil
Solder resist
a
b
Fig.1
Char.
Item
C
to 7U,1X
(1000pF and
below)
C
to 7U,1X
(more than 1000pF)
R6,R7,C8,F5
(C ≦10F)
R6,R7,F5
(C>10F)
E4
Frequency
1±0.1MHz
1±0.1kHz
120±24Hz
1±0.1kHz
Voltage
0.5 to 5Vrms
1±0.2Vrms
0.5±0.1Vrms
0.5±0.05Vrms
Step
Temperature(C )
1
25±2
2
-55±3(forC to 7U/1X/R6/R7/C8/L8/R9)
-30±3(for F5), 10±3(for E4)
3
25±2
4
150±3(for R9),125±3(for C/R7),
105±3(for C8),85±3(for other TC)
5
25±2
Char.
Temp. Range
Reference
Temp.
Cap. Change
R6
-55C to +85C
25C
Within ±15%
R7
-55C to +125C
Within ±15%
C8
-55C to +105C
Within ±22%
L8
-55C to +125C
Within ±15%
+125C to+150C
Within+15/-40%
R9
-55C to+150C
Within ±15%
E4
+10C to +85C
Within+22/-56%
F5
-30C to +85C
Within+22/-82%
JEMCGS-0015Q 2

SPECIFICATIONS AND TEST METHODS
No.
Item
Specification
Test Method
Temperature
Compensating Type
High Dielectric Type
11
Vibration
Resistance
Appearance
No defects or abnormalities
Solder the capacitor on the test jig (glass epoxy board) in the
same manner and under the same conditions as(10). The
capacitor should be subjected to a simple harmonic motion
having a total amplitude of 1.5mm, the frequency being varied
uniformly between the approximate limits of 10 and 55Hz. The
frequency range, from 10 to 55Hz and return to 10Hz, should be
traversed in approximately 1 minute. This motion should be
applied for a period of 2 hours in each 3 mutually perpendicular
directions(total of 6 hours).
Capacitance
Within the specified tolerance
Q/D.F.
30pF and over :
Q ≧1000
30pF and below:
Q ≧400+20C
C:Nominal
Capacitance (pF)
[R6,R7,C8,L8]
W.V.:100V : 0.025max. (C < 0. 068F)
: 0.05max.(C ≧0.068F)
W.V.:25/50V :0.025max.
W.V.:16/10V :0.035max.
W.V.:6.3V/4V :0.05max. (C < 3.3F)
:0.1max.(C ≧3.3F)
[R9]W.V.:50V: 0.05max.
[E4] W.V.:25Vmin. :0.025max
[F5] W.V.:25Vmin.
:0.05max. (C 0.1F) :0.09max.(C ≧0.1F)
W.V.:16/10V:0.125max. W.V.:6.3V:0.15max.
12
Deflection
Appearance
No defects or abnormalities.
Solder the capacitor on the test jig (glass epoxy board) shown in
Fig.2 using a eutectic solder. Then apply a force in the direction
shown in Fig 3 for 5±1sec. The soldering should be done by the
reflow method and should be conducted with care so that the
soldering is uniform and free of defects such as heat shock.
(in:mm)
Capacitance
Change
Within ±5% or ±
0.5pF
(Whichever is larger)
Within ±10%
13
Solderability of
Termination
75% of the terminations is to be soldered evenly and continuously
Immerse the capacitor in a solution of ethanol(JIS-K-8101) and
rosin (JIS-K-5902) (25% rosin in weight propotion). Preheat at
80 to 120C for 10 to 30 seconds. After preheating , immerse
in an eutectic solder solution for 2±0.5 seconds at 230±5C or
Sn-3.0Ag-0.5Cu solder solution for 2±0.5 seconds at 245±
5C.
14
Resistance to
Soldering Heat
The measured and observed characteristics should satisfy the specifications in
the following table
Preheat the capacitor at *120 to 150C for 1 minute. Immerse
the capacitor in an eutectic solder solution* or Sn-3.0Ag-0.5Cu
solder solution at 270±5C for 10±0.5 seconds. Set at room
temperature for 24±2 hours, then measure.
*Not apply to GRM02
∙Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10C for one hour and
then set at room temperature for 24±2 hours.
Perform the initial measurement.
*Preheating for GRM32/43/55
Appearance
No defects or abnormalities
Capacitance
Change
Within ±2.5% or ±0.25pF
(Whichever is larger)
R6,R7,C8,L8,R9:Within ±7.5%
E4,F5:Within ±20%
Q/D.F.
30pF and over :
Q ≧1000
30pF and below:
Q ≧400+20C
C:Nominal
Capacitance (pF)
[R6,R7,C8,L8]
W.V.:100V : 0.025max.(C < 0. 068F)
: 0.05max. (C ≧0.068F)
W.V.:25/50V :0.025max.
W.V.:16/10V :0.035max.
W.V.:6.3V/4V :0.05max.(C < 3.3F)
:0.1max.(C ≧3.3F)
[R9]W.V.:50V: 0.05max.
[E4] W.V.:25Vmin :0.025max
[F5] W.V.:25Vmin
:0.05max. (C 0.1F) :0.09max. (C ≧0.1F)
W.V.:16/10V:0.125max. W.V.:6.3V:0.15max.
I.R.
More than 10,000Mor 500F(Whichever is smaller)
Dielectric
Strength
No defects
Type
a
b
c
GR02
0.2
0.56
0.23
GR03
0.3
0.9
0.3
GR15
0.4
1.5
0.5
GRM18
1.0
3.0
1.2
GRM21
1.2
4.0
1.65
GRM31
2.2
5.0
2.0
GRM32
2.2
5.0
2.9
GRM43
3.5
7.0
3.7
GRM55
4.5
8.0
5.6
(GR02/03,GR15:0.8mm)
100
Fig.2
40
a
b
c
t : 1.6mm
f4.5
45
45
R230
20
50
Pressunzing
speed:1.0mm/sec.
Pressunze
Flexure:
≦1
Capacitance meter
Fig.3
Step
Temperature
Time
1
100C to 120C
1 min.
2
170C to 200C
1 min.
JEMCGS-0015Q 3

No.
Item
Specification
Test Method
Temperature
Compensating Type
High Dielectric Type
15
Temperature Cycle
The measured and observed characteristics should satisfy the specifications in
the following table
Fix the capacitor to the supporting jig in the same manner and
under the same conditions as (10). Perform the five cycles
according to the four heat treatments shown in the following
table. Set for 24±2 hours at room temperature, then measure
∙Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10C for one hour and
then set at room temperature for 24±2 hours. Perform the initial
measurement
Appearance
No defects or abnormalities
Capacitance
Change
Within ±2.5% or ±0.25pF
(Whichever is larger)
R6,R7,C8,L8,R9:Within ±7.5%
E4,F5:Within ±20%
Q/D.F.
30pF and over :
Q ≧1000
30pF and below:
Q ≧400+20C
C:Nominal
Capacitance (pF)
[R6,R7,C8,L8]
W.V.:100V : 0.025max. (C < 0. 068F)
: 0.05max.(C ≧0.068F)
W.V.:25/50V :0.025max.
W.V.:16/10V :0.035max.
W.V.:6.3V/4V :0.05max. (C < 3.3F)
:0.1max. (C ≧3.3F)
[R9]W.V.:50V: 0.05max.
[E4] W.V.:25Vmin. :0.025max
[F5] W.V.:25Vmin.
:0.05max. (C 0.1F) :0.09max.(C ≧0.1F)
W.V.:16/10V:0.125max. W.V.:6.3V:0.15max.
I.R.
More than 10,000Mor 500F (Whichever is smaller)
Dielectric
Strength
No defects
16
Humidity
Steady State
The measured and observed characteristics should satisfy the specifications in
the following table
Set the capacitor at 40±2C and in 90 to 95% humiduty for
500±12 hours.
Remove and set for 24±2 hours at room temperature, then
measure.
Appearance
No defects or abnormalities
Capacitance
Change
Within ±5% or ±0.5pF
(Whichever is larger)
R6,R7,C8,L8,R9:Within ±12.5%
E4,F5:Within ±30%
Q/D.F.
30pF and over : Q ≧350
10pF and over,
30pF and below:
Q ≧275 + C
10pF and below:
Q ≧200+10C
C:Nominal
Capacitance(pF)
[R6,R7,C8,L8]
W.V.:100V : 0.05max. (C < 0.068F)
: 0.075max. (C ≧0.068F)
W.V.:25/50V :0.05max.
W.V.:16/10V :0.05max.
W.V.:6.3V/4V:0.075max. (C < 3.3F)
:0.125max. (C ≧3.3F)
[R9]W.V.:50V: 0.075max.
[E4] W.V.:25Vmin.:0.05max.
[F5] W.V.:25Vmin.
:0.075max. (C0.1F) :0.125max. (C≧0.1F)
W.V.:16/10V:0.15max. W.V.:6.3V:0.2max.
I.R.
More than 1,000Mor 50F(Whichever is smaller)
Dielectric
Strength
No defects
17
Humidity Load
The measured and observed characteristics should satisfy the specifications in
the following table
Apply the rated voltage at 40±2C and 90 to 95% humidity for
500±12 hours.
Remove and set for 24±2 hours at room temprature, then
measure.
The charge/discharge current is less than 50mA.
∙Initial measurement for F5/16Vmax.
Apply the rated DC voltage for 1 hour at 40±2C .
Remove and set for 24±2 hours at room temperature.
Perform initial measurement.
Appearance
No defects or abnormalities
Capacitance
Change
Within ±7.5% or ±0.75pF
(Whichever is larger)
R6,R7,C8,L8,R9:Within ±12.5%
E4:Within ±30%
F5:Within ±30% (W.V.>10V)
F5:Within +30/-40% (W.V. ≦10V)
Q/D.F.
30pF and over : Q ≧200
30pF and below:
Q≧100 + C
C:Nominal
Capacitance(pF)
[R6,R7,C8,L8]
W.V.:100V : 0.05max. (C < 0.068F)
: 0.075max. (C ≧0.068F)
W.V.:25/50V :0.05max.
W.V.:16/10V :0.05max.
W.V.:6.3V/4V:0.075max. (C < 3.3F)
:0.125max. (C ≧3.3F)
[R9]W.V.:50V: 0.075max.
[E4] W.V.:25Vmin.:0.05max.
[F5] W.V.:25Vmin.
:0.075max. (C0.1F) :0.125max. (C≧0.1F)
W.V.:16/10V:0.15max. W.V.:6.3V:0.2max.
I.R.
More than 500Mor 25∙F(Whichever is smaller)
Dielectric
Strength
No defects
5
2
10
3
Step
1
2
3
4
Temp.(C)
Min.
Operating
Temp. +0/-3
Room
Temp.
Max.
Operating
Temp. +3/-0
Room
Temp.
Time
(min.)
30±3
2 to 3
30±3
2 to 3
SPECIFICATIONS AND TEST METHODS
JEMCGS-0015Q 4

SPECIFICATIONS AND TEST METHODS
No.
Item
Specification
Test Method
Temperature
Compensating Type
High Dielectric Type
18
High Temperature
Load
The measured and observed characteristics should satisfy the specifications
in the following table
Apply 200% of the rated voltage at the maximun operating
temperature ±3C for 1000±12 hours . Set for 24±2 hours at
room temperature, then measure.
The charge/discharge current is less than 50mA.
∙Initial measurement for high dielectric constant type.
Apply 200% of the rated DC voltage at the maximun operating
temperature ±3C for one hour. Remove and set for 24±2
hours at room temperature.Perform initial measurement.
Appearance
No defects or abnormalities
Capacitance
Change
Within ±3% or ±0.3pF
(Whichever is larger)
R6,R7,C8,L8,R9:Within ±12.5%
E4:Within ±30%
F5:Within±30% (Cap<1.0F)
F5:Within +30/-40% (Cap≧1.0F)
Q/D.F.
30pF and over :
Q ≧350
10pF and over,
30pF and below:
Q ≧275+ C
10pF and below:
Q ≧200+10C
C:Nominal
Capacitance(pF)
[R6,R7,C8,L8]
W.V.:100V : 0.05max. (C < 0.068F)
: 0.075max. (C ≧0.068F)
W.V.:25/50V :0.05max.
W.V.:16/10V :0.05max.
W.V.:6.3V/4V:0.075max. (C < 3.3F)
:0.125max. (C ≧3.3F)
[R9]W.V.:50V: 0.075max.
[E4] W.V.:25Vmin.:0.05max.
[F5] W.V.:25Vmin.
:0.075max. (C0.1F) :0.125max.(C≧0.1F)
W.V.:16/10V:0.15max. W.V.:6.3V:0.2max.
I.R.
More than 1,000Mor 50F(Whichever is smaller)
Dielectric
Strength
No defects
Table A-1
Char.
Nominal Values
(ppm/C) Note 1
Capacitance Change from 25 C
-55
-30
-10
Max.
Min.
Max.
Min.
Max.
Min.
5C
0±30
0.58
-0.24
0.40
-0.17
0.25
-0.11
6C
0±60
0.87
-0.48
0.59
-0.33
0.38
-0.21
6P
-150±60
2.33
0.72
1.61
0.50
1.02
0.32
6R
-220±60
3.02
1.28
2.08
0.88
1.32
0.56
6S
-330±60
4.09
2.16
2.81
1.49
1.79
0.95
6T
-470±60
5.46
3.28
3.75
2.26
2.39
1.44
7U
-750±120
8.78
5.04
6.04
3.47
3.84
2.21
1X
+350~-1000
-
-
-
-
-
-
Note 1Nominal values denote the temperature coefficient within a range of 25 Cto 125C(for C)/85C(for other TC).
5
2
JEMCGS-0015Q 5

P A C K A G I N G
G R M / F T y p e
There are three type of packaging for chip monolithic ceramic capacitor.
Please specify the packaging code.
1.Bulk Packaging(Packaging Code=B):In a bag.
Minimum Quantity : 1000(pcs./bag) , Only GR43S, GR55E/F : 500(pcs./bag)
2.Tape Carrier Packaging(Packaging Code:D/E/F/L/J/K)
2.1 Minimum Quantity(pcs./reel)
Type
f180 reel
f330 reel
Paper Tape
Plastic Tape
Paper Tape
Plastic Tape
Code:D/E
Code:L
Code:J /F
Code:K
GR02
40000 *
GR03
15000
50000
GR15
10000
50000
GR18
4000
10000
GR21
5/6/9
4000
10000
A/B
3000
10000
GR31
6/9
4000
10000
M/X
3000
10000
C
2000
6000
GR32
5/6/9
4000
10000
A/M
3000
10000
N
2000
8000
C
2000
6000
R/D/E
1000
4000
GR43
M
1000
5000
N/C/R
1000
4000
D
1000
4000
E
500
2000
S
500
1500
GR55
M
1000
5000
N/C/R
1000
4000
D
1000
4000
E
500
F/X
300
1500
* 4mm width 1mm pitch Plastic Taping.
2.2 Dimensions of Tape
(1)GR02
Code
GR02
A *3
0.23
*3 Nominal
value
B *3
0.43
t
0.5 max.
＊2 ＊1
φ0.8±0.04
2.0±0.04
0.9±0.05
4.0±0.05
1.8±0.02
＊1,2：1.0±0.02
0.05 Max.
Ａ
Ｂ
t
0.15～0.4
(in : mm)
JEMCGP-2694T 6

P A C K A G I N G
G R M / F T y p e
2.2 Dimensions of Tape
(2)GR03/15
(3) GR18/21/31/32 T:0.85 max.
Code
GR18
GR21
GR31
GR32
A
1.05±0.1
1.55±0.15
2.0±0.2
2.8±0.2
B
1.85±0.1
2.3±0.15
3.6±0.2
3.6±0.2
Code
GR03
GR15
A *3
0.37
0.65
*3 Nominal
value
B *3
0.67
1.15
t
0.5 max.
0.8 max.
(in : mm)
1.75±0.1
＊2
4.0±0.1
＊1,2：2.0±0.05
φ1.5＋０．１
－０
b1
Ｂ
Ａ
a1
3.5±0.05
8.0±0.3
1.75±0.1
＊1 ＊2
0.05 以下
＊2
＊1
φ0.8±0.04
4.0±0.1
8.0±0.3
3.5±0.05
＊1,2：1.0±0.02
0.05 Max.
Ａ
Ｂ
t
＊1
φ1.5
+0.1
-0
Ａ
Ｂ
Ｂ
t
*1,2：2.0±0.05
4.0±0.1
4.0±0.1
2.0±0.1
φ1.5
+0.1
-0
1.75±0.1
8.0±0.3
3.5±0.05
0.8 max.(T=0.5mm)
1.15 max.(T≦0.85mm)
Ａ
Ｂ
JEMCGP-2694T 7

P A C K A G I N G
G R M / F T y p e
(4) GR21/31/32 T:1.0 min.
Code
GR21
GR31
(Dimensions Tolerance
:±0.2within）
GR31
(Dimensions Tolerance
:±0.3）
GR32
A
1.45±0.2
1.9±0.2
2.1±0.2
2.8±0.2
B
2.25±0.2
3.5±0.2
3.6±0.2
3.5±0.2
(5) GR43/55
*1
2.5 max. (T≦1.8mm)
3.7 max. (T= 2.0/2.5mm)
4.7 max. (T≧2.8mm)
Code
GR43
GR55
A *2
3.6
5.2
B *2
4.9
6.1
*2Nominal
value
*1
0.3±0.1
+0.1
0
+0.1
0
f1.5
－0
0
+0.1
0
+0.1
0
8.0±0.1
4.0±0.1
*
*：2.0±0.1
12.0±0.3
5.5±0.1
1.75±0.1
A
B
*
0.25±0.1 (T≦2.0mm)
0.3±0.1 (T:2.5mm)
4.0±0.1
4.0±0.1
2.0±0.1
A
B
8.0±0.3
3.5±0.05
1.75±0.1
*
1.7 max. (T≦1.25mm)
2.5 max. (T:1.35/1.6mm)
3.0 max. (T:1.8/2.0mm)
3.7 max. (T≧2.5mm)
f1.5
－0
0
+0.1
0
(in : mm)
JEMCGP-2694T 8

P A C K A G I N G
G R M / F T y p e
Chip
Fig.1 Package Chips
Fig.2 Dimensions of Reel
2.0±0.5
f21±0.8
W1
W
Fig.3 Taping Diagram
Top Tape : Thickness 0.06
Feeding Hole :As specified in 2.2.
Hole for Chip : As specified in 2.2.
Base Tape : As specified in 2.2.
Bottom Tape :Thickness 0.05
(Only a bottom tape existence )
f180+0/-3.0
f330±2.0
f50 min.
(in : mm)
f13±0.5
W
w1
GR02
8.0 max
5±1.5
GR32 max.
16.5 max.
10±1.5
GR43/55
20.5 max.
14±1.5
JEMCGP-2694T 9

P A C K A G I N G
G R M / F T y p e
2.3 Tapes for capacitors are wound clockwise shown in Fig.3.
(The sprocket holes are to the right as the tape is pulled toward the user.)
2.4 Part of the leader and part of the vacant section are attached
as follows.
(in : mm)
2.5 Accumulate pitch : 10 of sprocket holes pitch = 40±0.3mm
2.6 Chip in the tape is enclosed by top tape and bottom tape as shown in Fig.1.
2.7 The top tape and base tape are not attached at the end of the tape for a minimum of
5 pitches.
2.8 There are no jointing for top tape and bottom tape.
2.9 There are no fuzz in the cavity.
2.10 Break down force of top tape : 5N min.
Break down force of bottom tape : 5N min. (Only a bottom tape existence )
2.11 Reel is made by resin and appeaser and dimension is shown in Fig 2. There are possibly
to change the material and dimension due to some impairment.
2.12 Peeling off force : 0.1 to 0.6N*in the direction as shown below.
* GR02,03:0.05N~0.5N
2.13 Label that show the customer parts number, our parts number, our company name, inspection
number and quantity, will be put in outside of reel.
Tail vacant Section
Chip-mounting Unit
Leader vacant Section
Leader Unit
(Top Tape only)
Direction
of Feed
160 Min.
190 Min.
210 Min.
165 ~180°
Top tape
JEMCGP-2694T 10