Panasonic MA3J7000G User manual

Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00192AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J7000G
Silicon epitaxial planar type
For high frequency rectification
■Features
•Forward current (Average) IF(AV) =500 mA rectification is possible
•Optimum for high frequency rectification because of its short re-
verse recovery time trr
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR40 V
Repetitive peak reverse voltage VRRM 40 V
Forward current (Average) IF(AV) 500 mA
Non-repetitive peak forward IFSM 2A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=500 mA 0.55 V
Reverse current IRVR=35 V 100 µA
Terminal capacitance CtVR=0 V, f =1 MHz 60 pF
Reverse recovery time *trr IF=IR=100 mA 5 ns
Irr =0.1 IR , RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 100 mA
IR= 100 mA
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz. 4.*: trr measurement circuit
■Package
•Code
SMini3-F2
•Pin Name
1: Anode
2: N.C.
3: Cathode
■Marking Symbol: M2V
■Internal Connection
12
3

2
MA3J7000G
SKH00192AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVR
10
−2
0 0.1 0.2 0.3 0.4 0.5 0.6
10
−1
1
10
10
2
10
3
Forward voltage VF(V)
Forward current IF(mA)
T
a = 100°C
−20°C
25°C
1
0 102030405060
10
10
2
10
3
10
4
Reverse voltage VR(V)
Reverse current IR(µA)
T
a = 100°C
25°C
0
0.2
0.4
0.6
0.8
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 500 mA
100 mA
10 mA
1
−40 0 40 80 120 160 200
10
10
2
10
3
10
4
Ambient temperature T
a
(°C)
Reverse current I
R
(µA)
V
R = 15 V
0
20
40
60
80
0 102030405060
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
10 −1
1
10
102
103
10110 −1
Pulse width tW(ms)
Forward surge current IF(surge) (A)
tW
Non-repetitive
IF(surge)
Ta= 25°C
IF(surge) tW
PR(AV) VRPF(AV) IF(AV) IF(AV) Ta
0
400
200
600
800
1
000
1
200
01020304050
Reverse voltage VR(V)
Reverse power dissipation (Average) PR(AV) (mW)
0.8
0.9
0.5
DC
0
50
100
150
200
250
300
0 300100 500 700
Forward current (Average) I
F(AV)
(mA)
Forward power dissipation (Average) P
F(AV)
(mA)
DC
60°
180°
120°
θ
360°
I
F
0
100
300
200
500
400
600
0 40 16012080
Ambient temperature T
a
(°C)
Forward current (Average) I
F(AV)
(mA)
DC
0.5
0.2
0.1
T
j
=125°C
V
R
= 10 V
t
p
T
I
F

MA3J7000G
3
SKH00192AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90
±0.10
(0.65)(0.65)
1.30
±0.10
1.25
±0.10
2.10
±0.10
0.425
±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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