Panasonic MA2J7270G User manual

Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00170AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J7270G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•VR=50 V is guaranteed
•IF(AV) =200 mA rectification is possible
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR50 V
Repetitive peak reverse voltage VRRM 50 V
Forward current (Average) IF(AV) 200 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF=30 mA 0.36 V
VF2 IF=200 mA 0.55 V
Reverse current IRVR=50 V 200 µA
Terminal capacitance CtVR=0 V, f =1 MHz 30 pF
Reverse recovery time *trr IF=IR=100 mA 3.0 ns
Irr =10 mA, RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = 100 mA
I
R = 100 mA
R
L = 100 Ω
10%
Input Pulse Output Pulse
I
rr = 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuit
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■Package
•Code
SMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 2F

2
MA2J7270G
SKH00170AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVR
10
−2
0 0.1 0.2 0.3 0.4 0.5 0.6
10
−1
1
10
10
2
10
3
Forward voltage VF(V)
Forward current IF(mA)
T
a = 150°C−20°C
100°C
25°C
1
0 102030405060
10
10
2
10
3
10
4
10
5
Reverse voltage VR(V)
Reverse current IR(µA)
T
a = 150°C
100°C
25°C
0
0.1
0.2
0.3
0.4
0.5
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 200 mA
100 mA
30 mA
1
−40 0 40 80 120 160 200
10
10
2
10
3
10
4
10
5
Ambient temperature T
a
(°C)
Reverse current I
R
(µA)
V
R = 30 V
5 V
0
30
25
20
15
10
5
0 102030405060
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
T
a = 25°C
IF(AV) Ta
0
50
150
100
250
200
300
0
DC
40 16012080
T
j
=150°C
Ambient temperature T
a
(°C)
Forward current (Average) I
F(AV)
(mA)
t
p
T
I
F

MA2J7270G
3
SKH00170AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini2-F3 Unit: mm
1.25 ±0.10
0.13
+0.05
−0.02
0.50 ±0.05
2
1
0.35 ±0.05
0.7
±0.1
5°
(0.15)
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.05
5°

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
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