Panasonic MA3XD11 User manual

Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00091CED
MA3XD11
Silicon epitaxial planar type
For high frequency rectification
■Features
•Forward current (Average) IF(AV) =1 A rectification is possible
•Low forward voltage VF
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Repetitive peak reverse voltage VRRM 25 V
Forward current (Average) *1IF(AV) 1.0 A
Non-repetitive peak forward IFSM 3A
surge current *2
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
12
3
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=1.0 A 0.45 V
Reverse current IRVR=20 V 200 µA
Terminal capacitance CtVR=0 V, f =1 MHz 180 pF
■Electrical Characteristics Ta=25°C±3°C
Internal Connection
Marking Symbol: M6K
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
Note) *1: Mounted on an alumina PC board
*2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA3XD11
SKH00091CED
IFVFIRVRVFTa
IRTa
10
−5
10
−6
10
−4
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−3
10
−2
10
−1
1
10
Forward voltage V
F
(V)
Forward current I
F
(A)
T
a
=125°C
75°C
25°C
−20°C
10
−7
0102030
10
−1
10
−2
10
−3
10
−4
10
−5
10
−6
Reverse voltage V
R
(V)
Reverse current I
R
(A)
T
a
=125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F
=1 A
10 mA
100 mA
10
−3
−40 0 40 80 120 160 200
10
−2
10
−1
1
10
10
2
Ambient temperature Ta(°C)
Reverse current IR(mA)
V
R
=20 V
10 V
5 V
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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