Panasonic MA4X159A User manual

Switching Diodes
1
Publication date: March 2004 SKF00043BED
MA4X159A (MA159A)
Silicon epitaxial planar type
For switching circuits
■Features
•Two isolated elements contained in one package, allowing high-
density mounting
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta=25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Double 75
Peak forward Single IFM 225 mA
current Double 170
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Double 375
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Internal Connection
Note) *:t=1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF= 100 mA 0.95 1.20 V
Reverse voltage VRIR= 100 µA80V
Reverse current IRVR= 75 V 100 nA
Terminal capacitance CtVR= 0 V, f = 1 MHz 0.9 2.0 pF
Reverse recovery time *trr IF= 10 mA, VR= 6 V 3 ns
Irr = 0.1 IR, RL= 100 Ω
■Electrical Characteristics Ta=25°C ±3°C
4
1
3
2
Marking Symbol: M1B
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 10 mA
VR= 6 V
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1.50
+0.25 –0.05
2.8
+0.2 –0.3
1.9 ±0.2
(0.65)
(0.2)
(0.95)(0.95)
0 to 0.1
34
21
0.5R
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
EIAJ: SC-61 Mini4-G1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).

MA4X159A
2SKF00043BED
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW
10 −2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a = 125°C
75°C
25°C
−20°C
10 −3
020 40 60 80 100 120
10
−2
10 −1
1
10
10
2
Reverse voltage V
R
(V)
Reverse current I
R
(µA)
T
a = 125°C
T
a = 75°C
T
a = 25°C
0
1.2
1.0
0.8
0.6
0.4
0.2
−40 0 40 80 120 160
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
IF= 100 mA
10 mA
1 mA
3 mA
0.1 mA
10 −3
−40 0 40 80 120 160
10 −2
10 −1
1
10
102
Ambient temperature Ta(°C)
Reverse current IR(µA)
VR= 40 V
VR= 80 V
10
−1
10
1
0 102030405060
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
T
a = 25°C
10
−1
1
10
10
2
10
3
10110
−1
Pulse width t
W
(ms)
Forward surge current I
F(surge)
(A)
tW
Non repetitive
IF(surge)
T
a = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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