Panasonic MA4Z159 User manual

Switching Diodes
1
Publication date: February 2008 SKF00049CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4Z159 (MA4S159)
Silicon epitaxial planar type
For switching circuits
■Features
•Two isolated elements contained in one package, allowing high-
density mounting
•Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Double 75
Peak forward Single IFM 225 mA
current Double 170
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Double 375
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) *: t = 1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF= 100 mA 0.95 1.20 V
Reverse voltage VRIR= 100 µA80V
Reverse current IRVR= 75 V 0.1 µA
Terminal capacitance CtVR= 0 V, f = 1 MHz 0.9 2.0 pF
Reverse recovery time *trr IF= 10 mA, VR= 6 V 3 ns
Irr = 0.1 IR, RL= 100 Ω
■Electrical Characteristics Ta=25°C ±3°C
4
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs=50 Ω
Wave Form Analyzer
(SAS-8130)
Ri=50 Ω
tp=2 µs
tr=0.35 ns
δ=0.05
IF=10 mA
VR=6 V
RL=100 Ω
10%
Input Pulse Output Pulse
Irr =0.1 IR
trtp
trr
VR
IF
t
t
A
Note) The part number in the parenthesis shows conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
■Package
•Code
SMini4-F1
•Pin Name
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
■Marking Symbol: M1B
■Internal Connection

MA4Z159
2SKF00049CED
This product complies with the RoHS Directive (EU 2002/95/EC).
10−2
0 0.2 0.4 0.6 0.8 1.0 1.2
10−1
1
10
102
103
Forward voltage VF (V)
Forward current IF (mA)
Ta= 150°C
100°C
25°C
− 20°C
1
0 20406080100120
10
102
103
104
105
Reverse voltage VR (V)
Reverse current IR (nA)
Ta= 150°C
100°C
25°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F
=100 mA
10 mA
3 mA
1
−40 0 40 80 120 160 200
10
102
103
104
105
Ambient temperature Ta (°C)
Reverse current I
R
(nA)
V
R
=75 V
35 V
6 V
0
1.2
1.0
0.8
0.6
0.4
0.2
0 20406080100120
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f =1 MHz
T
a
=25°C
10−1
1
10
102
103
10110−1
Pulse width t
W
(ms)
Forward surge current I
F(surge)
(A)
t
W
Non repetitive
I
F(surge)
Ta= 25°C
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW

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