Panasonic MAS3795EG User manual

Schottky Barrier Diodes (SBD)
1
Publication date: November 2007 SKH00219AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAS3795EG
Silicon epitaxial planar type
For high-speed switching circuits
■Features
•High-density mounting is possible
•Optimum for high frequency rectification because of its short
reverse recovery time (trr)
•Forward voltage VFoptimum for low voltage rectification VF=
<0.3 V (at IF=1 mA)
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current Single IF30 mA
Double 20
Peak forward current Single IFM 150 mA
Double 110
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF=1 mA 0.3 V
VF2 IF=30 mA 1.0
Reverse current IRVR=30 V 30 µA
Terminal capacitance CtVR=1 V, f =1 MHz 1.5 pF
Reverse recovery time *trr IF=IR=10 mA 1.0 ns
Irr =1 mA, RL=100 Ω
Detection efficiency ηVIN =3 V(peak) , f =30 MHz 65 %
RL=3.9 kΩ, CL=10 pF
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF=10 mA
IR=10 mA
RL=100 Ω
10%
Input Pulse Output Pulse
Irr =1 mA
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.*: trr measurement circuit
■Package
•Code
SSSMini3-F2
•Pin Name
1: Anode 1
2: Anode 2
3: Cathode 1, 2
■Marking Symbol: M3
■Internal Connection
12
3

2
MAS3795EG
SKH00219AED
This product complies with the RoHS Directive (EU 2002/95/EC).
10
−2
0 0.4 0.8 1.2 1.6 2.0 2.4
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a
=125°C–20°C
75°C 25°C
10
−1
0 5 10 15 20 25 30
1
10
10
2
10
3
10
4
Reverse voltage VR(V)
Reverse current IR(µA)
T
a
=125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F
=30 mA
10 mA
1 mA
10
−1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature T
a
(°C)
Reverse current I
R
(µA)
V
R
=25 V
3 V
1 V
0
3.0
2.5
2.0
1.5
1.0
0.5
0 5 10 15 20 25 30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f =1 MHz
T
a
=25°C
IRTaCtVR
IFVFIRVRVFTa

MAS3795EG
3
SKH00219AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2 Unit: mm
0.30
+0.05
− 0.02
0.20
+0.05
− 0.02
0.13
+0.05
− 0.02
(0.4)
(0.4)
0.80 ±0.05
0.80
±0.05
0.51
±0.04
1.20 ±0.05
1.20
±0.05
0.20
±0.05
3
12
(0.27)
5°
0 to 0.05 (0.5)
5°

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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