Panasonic 2SA2174G User manual

Transistors
Publication date: May 2007 SJC00386AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2174G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054G
Features
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -60 V
Collector-emitter voltage (Base open) VCEO -50 V
Emitter-base voltage (Collector open) VEBO -7V
Collector current IC-100 mA
Peak collector current ICP -200 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= -10 mA, IE= 0 -60 V
Collector-emitter voltage (Base open) VCEO IC= -2 mA, IB= 0 -50 V
Emitter-base voltage (Collector open) VEBO IE= -10 mA, IC= 0 -7 V
Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE= 0 -0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = -10 V, IB= 0 -100 mA
Forward current transfer ratio hFE VCE = -10 V, IC= -2 mA 160 460 
Collector-emitter saturation voltage VCE(sat) IC= -100 mA, IB= -10 mA -0.2 -0.5 V
Transition frequency fTVCB = -10 V, IE= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = -10 V, IE= 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSMini3-F3
Marking Symbol: 7L
Pin Name
1. Base
2. Emitter
3. Collector

2SA2174G
2SJC00386AED
This product complies with the RoHS Directive (EU 2002/95/EC).
PTTaICVCE ICVBE
VCE(sat) IChFE ICCob VCB
0 40 12080
0
140
40
60
20
100
120
80
2SA2174J_PC-Ta
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0−4−8−12
0
−10
−20
−30
−50
−40
−60
−70
−80
2SA2174J_IC-VCE
Collector current IC(mA)
Collector-emitter voltage VCE (V)
Ta= 25°C
−50 µA
−100 µA
−150 µA
−200 µA
−250 µA
IB= −300 µA
0 − 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4
0
−30
−40
−50
−20
−10
−60
−70
−80
−90
−100
2SA2174J_IC-VBE
Collector current IC(mA)
Base-emitter voltage VBE (V)
VCE = −10 V
Ta= 85°C
25°C
−25°C
−0.1 −1−10 −100
−0.01
−0.1
−1
Collector current IC(mA)
Collector-emitter saturation voltage VCE(sat) (V)
2SA2174J_VCE(sat)-IC
IC/IB=10
Ta= 85°C
25°C
−25°C
−1−10 −100 −1 000
0
300
350
250
400
50
100
200
150
Collector current IC(mA)
Forward current transfer ratio hFE
2SA2174J_hFE-IC
VCE =−10 V
Ta= 85°C
25°C
−25°C
0−8−24−16 −32 −40
1
10
Collector-base voltage VCB (V)
2SA2174J_Cob-VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
f =1 MHz
Ta= 25°C

This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05 −0.03
0.26 +0.05 −0.02
12
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
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