Panasonic 2SC2404 User manual

1
Transistors
Publication date: March 2003 SJC00114BED
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=030V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V
Base-emitter voltage VBE VCB =6 V, IE=−1 mA 0.72 V
Forward current transfer ratio *hFE VCB =6 V, IE=−1 mA 65 260 
Transition frequency fTVCB =6 V, IE=−1 mA, f =100 MHz 450 650 MHz
Reverse transfer capacitance Cre VCB =6 V, IE=−1 mA, f =10.7 MHz 0.8 1.0 pF
(Common emitter)
Power gain GPVCB =6 V, IE=−1 mA, f =100 MHz 24 dB
Noise figure NF VCB =6 V, IE=−1 mA, f =100 MHz 3.3 dB
Unit: mm
■Electrical Characteristics Ta=25°C ±3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Marking Symbol: U
Rank C D
hFE 65 to 160 100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2404
2SJC00114BED
ICVBE VCE(sat) IChFE IC
PCTaICVCE ICIB
fTIECre VCE Cob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
048 1612
0
12
10
8
6
4
2
T
a
=25°C
I
B
=100 µA
80 µA
60 µA
40 µA
20 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
04080 160120
0
12
10
8
6
4
2
V
CE
=6 V
T
a
=25°C
Base current IB(µA)
Collector current IC(mA)
0 2.01.60.4 1.20.8
0
30
25
20
15
10
5
V
CE
=6 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
360
300
240
180
120
60
V
CE
=6 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
1 200
1 000
800
600
400
200
V
CB
=6 V
T
a
=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
0.1 1 10 100
0
2.4
2.0
1.6
1.2
0.8
0.4
IC=1 mA
f =10.7 MHz
Ta=25°C
Collector-emitter voltage VCE (V)
Reverse transfer capacitance Cre (pF)
(Common emitter)
030252051510
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2404
3
SJC00114BED
GPIENF IEbie gie
bre gre bfe gfe boe goe
−0.1 −1−10 −100
0
40
30
10
25
35
20
5
15
f =100 MHz
R
g
=50 Ω
T
a
=25°C
V
CE
=10 V
6 V
Power gain G
P
(dB)
Emitter current I
E
(mA)
−0.1 −1−10 −100
0
12
10
8
6
4
2
f =100 MHz
R
g
=50 kΩ
T
a
=25°C
V
CE
=6 V, 10 V
Noise figure NF (dB)
Emitter current IE(mA)
015936 12
0
20
16
12
8
4
18
14
10
6
2
yie =gie +jbie
VCE =10 V
100
100
−2 mA
−1 mA
−4 mA
−7 mA
IE=−0.5 mA
150
f =10.7 MHz
58
25
58
25
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS)
−0.5 0−0.1−0.4 −0.2−0.3
−6
0
−1
−2
−3
−4
−5
y
re
=g
re
+jb
re
V
CE
=10 V
f =150 MHz
I
E
=−7 mA
−4 mA
−1 mA
25
58
100
10.7
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance bre (mS)
0 1008020 6040
−120
0
−20
−40
−60
−80
−100
yfe =gfe +jbfe
VCE =10 V
f =150 MHz
10.7
−0.4 mA
−1 mA
−2 mA
−4 mA
IE=−7 mA
100
100
100
150
150
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance bfe (mS)
0 0.50.40.1 0.30.2
0
1.2
1.0
0.8
0.6
0.4
0.2
yoe =goe +jboe
VCE =10 V
f =10.7 MHz
IE=−0.5 mA
−2 mA
−4 mA
−7 mA
−1 mA
58
25
100
150
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS)
This product complies with the RoHS Directive (EU 2002/95/EC).

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