Panasonic UP0KG8D User manual

Multi Chip Discrete
Publication date: November 2005 SJJ00334AED 1
UP0KG8D
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
For digital circuits
Features
Two elements incorporated into one package (SBD +Tr)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
Basic Part Number
MA2SD24 +UNR31A3
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
SBD
Reverse voltage VR20 V
Repetitive peak reverse voltage VRRM 20 V
Forward current (Average) IF(AV) 200 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward
surge current IFSM 1 A
Tr
Collector-base voltage
(Emitter open) VCBO -50 V
Collector-emitter voltage
(Base open) VCEO -50 V
Collector current IC-80 mA
Overall
Total power dissipation PT125 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Marking Symbol: 6K
Internal Connection
Unit: mm
1: Anode 4: Collector
2: Base 5: Cathode
3: Emitter SSMini5-F2 Package
–0.02
+0.05
0.20(0.30)
(0.50)
1 2 3
5 4
(0.50)
1.60±0.050.55±0.05
0 to 0.02
0.10 max
1.20±0.05
1.00±0.05
1.60±0.05
0.10±0.02
(0.20)
(0.20)
5°
5°
Display at No.1 lead
3
4
1 2
5
Tr
SBD

UP0KG8D
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Electrical Characteristics Ta= 25°C±3°C
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF= 200 mA 0.50 0.58 V
Reverse current IRVR= 10 V 0.1 1 mA
Terminal capacitance CtVR= 0 V, f = 1 MHz 25 pF
Reverse recovery time *trr
IF= IR= 100 mA, Irr = 10 mA,
RL= 100 W3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= IR= 100 mA
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Tr2
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= -10 mA, IE= 0 -50 V
Collector-emitter voltage (Base open) VCEO IC= -2 mA, IB= 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE= 0 -0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB= 0 -0.5 mA
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC= 0 -0.1 mA
Forward current transfer ratio hFE VCE = -10 V, IC= -5 mA 80 
Collector-emitter saturation voltage VCE(sat) IC= -10 mA, IB= -0.3 mA -0.25 V
Output voltage high-level VOH VCC = -5 V, VB= -0.5 V, RL= 1 kW-4.9 V
Output voltage low-level VOL VCC = -5 V, VB= -3.5 V, RL= 1 kW-0.2 V
Input resistance R1-30% 47 +30% kW
Resistance ratio R1/ R20.8 1.0 1.2 
Transition frequency fTVCB = -10 V, IE= 2 mA, f = 200 MHz 80 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

UP0KG8D
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PTTa
IFVFIRTaCDVR
Common characteristics chart
Characteristics charts of SBD
0 40 12080
0
120
40
80
UP0KG8D_PT-Ta
Total power dissipation PT(mW)
Ambient temperature Ta(°C)
0 0.2 0.6 0.80.4
0
200
160
40
80
120
UP0KG8D_IF-VF
Forward current IF(mA)
Forward voltage VF(V)
Ta= 85°C
−25°C
25°C
-25 15 55
1
102
103
104
10
UP0KG8D_IR-Ta
Reverse current IR(mA)
Ambient temperature Ta(°C)
VR=10 V
0 168
0
102
10
UP0KG8D_CD-VR
Diode capacitance CD(pF)
Reverse voltage VR(V)
f =1 MHz
Ta= 25°C

UP0KG8D
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ICVCE VCE(sat) IChFE IC
Cob VCB IOVIN VIN IO
Characteristics charts of Tr
0−4−8−12
−40
−80
−120
−160
0
IB= −1.0 mA
−0.1 mA
−0.2 mA
−0.3 mA
−0.4 mA
−0.5 mA
−0.6 mA
−0.7 mA
−0.8 mA
−0.9 mA
Ta= 25°C
UP0KG8D_ IC - VCE
Collector current IC(mA)
Collector-emitter voltage VCE (V)
−1−10−1−10 −102
−10
−1
−10−1
−10−2
UP0KG8D_ VCE(sat) - IC
Ta= 85°C
−25°C
25°C
IC/IB= 10
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−10−1−1−10 −102−103
100
200
300
0
UP0KG8D_ hFE-IC
25°C
VCE =−10 V Ta= 85°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
0−10 −20 −30 −40
1
10
f =1 MHz
Ta= 25°C
UP0KG8D_Cob-VCB
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
0−1−2
−10
−10−1
−1
−10−2
UP0KG8D_ IO - VIN
VO= −5 V
Ta= 25°C
Output current IO(mA)
Input voltage VIN (V)
−10−2−1−102 −10−10−1
−10
−1
UP0KG8D_ VIN - IO
VO= −0.2 V
Ta= 25°C
Input voltage VIN (V)
Output current IO(mA)

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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