Panasonic 2SA2079 User manual

Transistors
Publication date : December 2004 SJC00326AED 1
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
 Features
 High forward current transfer ratio hFE
 Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
 Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –45 V
Collector-emitter voltage (Base open) VCEO –45 V
Emitter-base voltage (Collector open) VEBO –7V
Collector current IC–100 mA
Peak collector current ICP –200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
 Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0–45 V
Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0–45 V
Emitter-base voltage (Collector open) VEBO IE = –10 µA, IC = 0–7V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0– 0.1µA
Collector-emitter cut-off current (Base open) ICEO VCE = –10 V, IB = 0–100 µA
Forward current transfer ratio hFE VCE = –10 V, IC = –2 mA 180 390 
Collector-emitter saturation voltage VCE(sat) IC = –100 mA, IB = –10 mA – 0.2– 0.5V
Transition frequency fTVCB = –10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = –10 V, IE = 0, f = 1 MHz 2.2pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39+0.01
−0.03
0.25±0.05 0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.05±0.03
3
Marking Symbol : 3D
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2079
2 SJC00326AED
PC  Ta IC  VCE IC  IB
IB  VBE IC  VBE VCE(sat)  IC
020 40 60 80 100 120 140
0
20
40
60
80
100
120
2SA2162_ PC-Ta
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
0
−10
−20
−30
−40
−50
−60
0−2−4−6−8−10 −12
Ta = −300 µA
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
2SA2079_IC-VCE
Ta = 25°C
Base current IB (mA)
Collector current IC (mA)
2SA2079_IC-IB
0− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2
0
−140
−120
−100
−80
−60
−40
−20
VCE = −10 V
Ta = 25°C
Base-emitter voltage VBE (V)
Base current IB (mA)
2SA2079_IB-VBE
0− 0.8− 0.2 − 0.4 − 0.6
0
−1.0
−2.0
−2.5
−3.0
−3.5
− 0.5
−1.5
VCE = −10 V
Ta = 25°C
Base-emitter voltage VBE (V)
Collector current IC (mA)
2SA2079_IC-VBE
0− 0.4
− 0.2 −1.0 −1.2
− 0.8
− 0.6
−20
−40
−60
−80
−100
−120
0
Ta = 75°C
25°C
−25°C
VCE = −10 V
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
Ta = 75°C
25°C
−25°C
2SA2079_VCE(sat)-IC
−1−10 −100
− 0.01
− 0.1
−1
IC / IB = 10 V
hFE  IC Cob  VCB
Forward current transfer ratio hFE
Collector current IC (mA)
2SA2079_hFE-IC
−1−10 −100 −1000
0
300
250
200
150
100
50
Ta = 75°C
25°C
−25°C
VCE = −10 V
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
−8−16 −24 −32 −40
0
10
1
2SA2079_Cob-VCB
f = 1 MHz
Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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defect which may arise later in your equipment.
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