Panasonic 2SC1473 User manual

1
Transistors
Publication date: March 2004 SJC00105BED
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
■Features
•High collector-emitter voltage (Base open) VCEO
•High transition frequency fT
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage 2SC1473 VCBO 250 V
(Emitter open)
2SC1473A 300
Collector-emitter voltage 2SC1473 VCEO 200 V
(Base open)
2SC1473A 300
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC70 mA
Peak collector current ICP 100 mA
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta=25°C ±3°C
5.0 ±0.2
0.7 ±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0 ±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A TO-92-B1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage 2SA1473 VCEO IC=100 µA, IB=0 200 V
(Base open)
2SA1473A 300
Emitter-base voltage (Collector open) VEBO IE=1 µA, IC=07V
Collector-emitter cutoff 2SA1473 ICEO VCE =120 V, Ta=60°C, IB=01µA
current (Base open)
2SA1473A VCE =120 V, IB=01
Forward current transfer ratio *hFE VCE =10 V, IC=5 mA 60 220 
Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5 mA 1.2 V
Transition frequency fTVCB =10 V, IE=−10 mA, f =200 MHz 50 80 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 10 pF
(Common base, input open circuited)
Rank Q R
hFE 60 to 150 100 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC1473, 2SC1473A
2SJC00105BED
PCTaICVCE ICVBE
ICIBVCE(sat) ICIBVBE
hFE ICfTIECob VCB
0 16040 12080
0
1.0
0.8
0.6
0.4
0.2
Collector power dissipation PC(W)
Ambient temperature Ta(°C)
0108264
0
120
100
80
60
40
20
I
B
=2 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.2 mA
0.4 mA
0.6 mA
T
a
=25°C
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
V
CE
=10 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
VCE =10 V
Ta=25°C
Base current I
B
(mA)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0 1.00.80.2 0.60.4
0
3.0
2.5
2.0
1.5
1.0
0.5
V
CE
=10 V
T
a
=25°C
Base-emitter voltage V
BE
(V)
Base current I
B
(mA)
0.1 1 10 100
0
360
300
240
180
120
60
VCE =10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−1−10 −100
0
160
120
40
80
V
CB
=10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
110100
0
10
8
6
4
2
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC1473, 2SC1473A
3
SJC00105BED
ICBO TaIEBO TaSafe operation area
020016040 12080
1
10
102
103
104
VCB =250 V
Ambient temperature T
a
(°C)
I
CBO
(T
a
)
I
CBO
(T
a
=25°C)
0 20016040 12080
1
10
10
2
10
3
10
4
V
EB
=5 V
Ambient temperature T
a
(°C)
I
EBO
(T
a
)
I
EBO
(T
a
=25°C)
1 10 100 1 000
0.1
1
10
100
1 000 Single pulse
T
a
=25°C
t =10 ms
2SC1473A 2SC1473
t =1 ms
DC
I
CP
I
C
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
This product complies with the RoHS Directive (EU 2002/95/EC).

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