Panasonic 2SB1321A User manual

Transistors
1
Publication date: March 2003 SJC00079BED
2SB1321A
Silicon PNP epitaxial planar type
For low-frequency output amplification and driver amplification
Complementary to 2SD1992A
■Features
•Allowing supply with the radial taping
•Large collector power dissipation PC(600 mW)
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−0.5 A
Peak collector current ICP −1A
Collector power dissipation PC600 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −60 V
Collector-emitter voltage (Base open) VCEO IC=−2 mA, IB=0 −50 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −7V
Collector-base cutoff current (Emitter open) ICBO VCB =−20 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−20 V, IB=0 −1µA
Forward current transfer ratio hFE1 *2VCE =−10 V, IC=−10 mA 85 340 
hFE2 *1VCE =−10 V, IC=−500 mA 40 
Collector-emitter saturation voltage VCE(sat) IC=−300 mA, IB=−30 mA −0.35 −0.60 V
Transition frequency fTVCB =−10 V, IE=10 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 6 15 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no marking symbol for rank.
6.9 ±0.1 2.5 ±0.1
0.45
1.05
±0.05
2.5 ±0.5
123
2.5
±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.8)
(1.0)(0.85)
3.5
±0.1
14.5
±0.5
(0.7) (4.0)
0.65 max.
Unit: mm
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1321A
2SJC00079BED
VCE(sat) ICVBE(sat) IChFE IC
PCTaICVCE ICIB
fTIECob VCB VCER RBE
0
0 16040 12080
200
600
400
800
Ambient temperature Ta(°C)
Collector power dissipation PC(mW)
0 –12–2 –10–4 –8–6
0
−1.2
−1.0
−
0.8
−
0.6
−
0.4
−
0.2
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
I
B
=−10 mA
Collector-emitter voltage VCE (V)
Collector current I
C
(A)
T
a
=25°C
0−10−8−6−4−2
0
−
0.8
−
0.6
−
0.2
−
0.5
−
0.7
−
0.4
−
0.1
−
0.3
Base current IB(mA)
Collector current I
C
(A)
V
CE
=−10 V
T
a
=25°C
−1
−10
−100
−1−10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(A)
IC/IB=10
−0.01
−0.01
−0.1
−0.1
−1
−10
−100
−1−10
Ta=−25°C
75°C
25°C
−0.01 −0.1
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC(A)
IC/IB=10
−0.01
−0.1
0
600
500
400
300
200
100
−1−10
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
V
CE
=−10 V
−0.01 −0.1
Collector current I
C
(A)
1 10 100
0
240
200
160
120
80
40
Transition frequency fT(MHz)
Emitter current I
E
(mA)
VCB =−10 V
Ta=25°C
0
−1
24
20
16
12
8
4
−10 −100
Collector-base voltage VCB (V)
IE=0
f =1 MHz
Ta=25°C
Collector output capacitance (Common base, input open circuited) Cob (pF)
1 10 100 1 000
0
−120
−100
−80
−60
−40
−20
Base-emitter resistance RBE (kΩ)
I
C
=−2 mA
T
a
=25°C
Collector-emitter voltage (Resistor between B and E) VCER (V)
This product complies with the RoHS Directive (EU 2002/95/EC).

2SB1321A
3
SJC00079BED
ICEO Ta
1
10
10
2
10
3
10
4
Ambient temperature T
a
(°C)
02001601208040
V
CE
=−10 V
I
CEO
(T
a
)
I
CEO
(T
a
=25°C)
This product complies with the RoHS Directive (EU 2002/95/EC).

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