Panasonic 2SB1679G User manual

Transistors
1
Publication date: April 2007 SJC00355AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1679G
Silicon PNP epitaxial planar type
For low-frequency amplification
■Features
•Large collector output capacitance (Common base, input open cir-
cuited) Cob
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −10 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−0.5 A
Peak collector current ICP −1A
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank R S
hFE1 130 to 220 180 to 350
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −15 V
Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −10 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −7V
Collector-base cutoff current (Emitter open) ICBO VCB =−10 V, IE=0 −100 nA
Forward current transfer ratio *1hFE1 *2VCE =−2 V, IC=−0.5 A 130 350 
hFE2 VCE =−2 V, IC=−1 A 60
Collector-emitter saturation voltage *1VCE(sat) IC=−0.4 A, IB=−8 mA −0.16 −0.30 V
Base-emitter saturation voltage *1VBE(sat) IC=−0.4 A, IB=−8 mA −0.8 −1.2 V
Transition frequency fTVCB =−10 V, IE=50 mA, f =200 MHz 130 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 22 pF
(Common base, input open circuited)
■Package
•Code
SMini3-F2
•Marking Symbol: 3V
•Pin Name
1. Base
2. Emitter
3. Collector

2SB1679G
2SJC00355AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) ICVBE(sat) IChFE IC
PCTaICVCE ICVBE
016
0
40 12080
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0
6
54132
0
1
000
800
900
600
700
400
300
500
200
100
T
a
=25°C
4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
I
B
= 5.0 mA
Collector current IC(mA)
Collector-emitter voltage V
CE
(V)
0
−1.4−1.0 −1.2−0.8−0.2 −0.6−0.4
0
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
V
CE
=−2 V
T
a
=85°C
−25°C
25°C
Base-emitter voltage VBE (V)
Collector current I
C
(mA)
−1−10 −100 −1 000
−0.01
− 0.1
−1IC/ IB=50
Ta=85°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−1−10 −100 −1 000
−0.1
−1
−10 I
C
/ I
B
=50
T
a
=85°C
25°C
−25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(mA)
−1−100−10 −1 00
0
0
450
350
400
300
250
200
150
100
50
V
CE
=−2 V
T
a
=85°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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