Panasonic PIN diodes MA27P110G User manual

1
Publication date: October 2007 SKL00026AED
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27P110G
Silicon epitaxial planar type
For high frequency switch
■Features
•Low terminal capacitance
•Low forward dynamic resistance
•SSS-Mini type 2-pin package
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF50 mA
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF=1 mA 0.76 0.85 V
VF2 IF=10 mA 0.85 1.00 V
Reverse current IRVR=60 V 1.0 100 nA
Terminal capacitance CtVR=0 V, f =1 MHz 0.55 0.80 pF
Forward dynamic resistance rf1 IF=1 mA, f =100 MHz 1.6 3.0 Ω
rf2 IF=10 mA, f =100 MHz 0.9 1.5 Ω
■Electrical Characteristics Ta=25°C ±3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
■Package
•Code
SSSMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: F
Note) *: With a glass epoxy PC board.

MA27P110G
2SKL00026AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRCtVR
rfIF
10
−3
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
10
−2
1
10
10
2
10
3
T
a =25°C
Forward voltage VF(V)
Forward current I
F
(mA)
10
−4
10
−2
10
−3
0 102030405060
10
−1
1
10
Reverse voltage V
R
(V)
Reverse current I
R
(nA)
T
a =25°C
0
0.6
0.4
0.2
0 5 10 15 20 25
T
a =25°C
f=1 MHz
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
10
−1
10
−2
1
10
10
2
10
3
10
−1
110
Forward current IF(mA)
Forward dynamic resistance rf(Ω)
T
a
= 25°C
f = 100 MHz

MA27P110G
3
SKL00026AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini2-F3 Unit: mm
1.40
±0.05
0.27
+0.05
−0.03
2
1
0.60
±0.05
1.00
±0.05
0.52
±0.03
0 to 0.05
(5°)
(0.27)
0.13
+0.05
−0.02
(5°)
0.20
±0.05

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