Panasonic Transistors 2SC4691J User manual

Transistors
1
Publication date: January 2003 SJC00282BED
2SC4691J
Silicon NPN epitaxial planar type
For high-speed switching
■Features
•Low collector-emitter saturation voltage VCE(sat)
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB =40 V, IE=0 0.1 µA
Emitter-base cutoff current (Collector open) IEBO VEB =4 V, IC=0 0.1 µA
Forward current transfer ratio *hFE VCE =1 V, IC=10 mA 60 200 
Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1 mA 0.17 0.25 V
Base-emitter saturation voltage VBE(sat) IC=10 mA, IB=1 mA 1.0 V
Transition frequency fTVCB =10 V, IE=−10 mA, f =200 MHz 450 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time ton Refer to the measurement circuit 17 ns
Turn-off time toff 17 ns
Storage time tstg 10 ns
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (E-B short) VCES 40 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC100 mA
Peak collector current ICP 300 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Marking Symbol: 2Y
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R No-rank
hFE 60 to 120 90 to 200 60 to 200
Product of no-rank is not classified and have no indication for rank.
0.27 ±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00 ±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC4691J
2SJC00282BED
VBE(sat) IChFE ICCob VCB
PCTaICVCE VCE(sat) IC
220 Ω
0.1 µF
50 Ω
V
CC
= 3 V
V
OUT
3.3 kΩ
50 Ω
V
IN
= 10 V
3.3 kΩ
VBB = −3 V
V
IN
V
OUT
t
on
90%
10%
90%
10%
t
off
(Waveform at A)
V
IN
V
OUT
10%
10%
t
stg
910 Ω
0.1 µF
0.1 µF
A
90 Ω
V
CC
= 10 V
V
OUT
500 Ω
50 Ω
V
IN
= 10 V
500 Ω
1 kΩ
V
BB
= 2 V
t
on
, t
off
test circuit t
stg
test circuit
Measurement circuit
0 15012510025 7550
0
150
125
100
75
50
25
Ambient temperature T
a
(°C)
Collector power dissipation P
C
(mW)
0654132
0
250
200
150
100
50
T
a
= 25°C
I
B
= 8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
0.1 1 10 100 1 000
0.01
1
0.1
IC / IB= 10
Ta= 75°C
25°C
−25°C
Collector current I
C
(mA)
Collector-emitter saturation voltage V
CE(sat)
(V)
0.1 1 10 100
0.1
10
1
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100 1 000
0
160
120
40
100
140
80
20
60
V
CE
= 1 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
0 5 15 20 25 3010 35
0.1
100
10
1
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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