Panasonic Transistors 2SC2480 User manual

1
Transistors
Publication date: June 2006 SJC00116CED
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■Features
•High transition frequency fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=100 µA, IE=030 V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V
Base-emitter voltage VBE VCB =10 V, IE=−2 mA 720 mV
Forward current transfer ratio hFE VCB =10 V, IE=−2 mA 25 250 
Transition frequency *fTVCB =10 V, IE=−15 mA, f =200 MHz 800 1 300 1 600 MHz
Reverse transfer capacitance Crb VCE =6 V, IC=0, f =1 MHz 0.8 pF
(Common base)
Reverse transfer capacitance Cre VCB =10 V, IE=−1 mA, f =10.7 MHz 1.0 1.5 pF
(Common emitter)
Power gain GPVCB =10 V, IE=−1 mA, f =200 MHz 20 dB
Unit: mm
■Electrical Characteristics Ta=25°C ±3°C
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Marking Symbol: R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank T S No-rank
fT800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol RT RS R
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2480
2SJC00116CED
IBVBE ICVBE hFE IC
PCTaICVCE ICIB
VCE(sat) ICfTIECre VCE
0 16040 12080
0
240
200
160
120
80
40
Ambient temperature Ta(°C)
Collector power dissipation PC(mW)
0
24
20
16
12
8
4
0481216
I
B
=300 µA
50 µA
100 µA
150 µA
200 µA
250 µA
Collector-emitter voltage VCE (V)
Collector current IC(mA)
T
a
=25°C
0
0 500400300200100
24
20
16
12
8
4
Base current IB(µA)
Collector current IC(mA)
VCE =10 V
Ta=25°C
0
400
350
300
250
200
150
100
50
0 2.01.61.20.80.4
VCE =10 V
Ta=25°C
Base-emitter voltage VBE (V)
Base current IB(µA)
0
0 2.01.61.20.80.4
60
50
40
30
20
10
VCE =10 V
Ta=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
0
0.1
240
200
160
120
80
40
1 10 100
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
V
CE
=10 V
Collector current I
C
(mA)
0.01
0.1
0.1
1
10
100
1 10 100
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
I
C
/I
B
=10
T
a
=75°C
25°C
–25°C
−0.1 −1−10 −100
0
1 600
1 400
1 200
1 000
800
600
400
200
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
V
CB
=10 V
T
a
=25°C
0
2.4
2.0
1.6
1.2
0.8
0.4
0.1 1 10 100
Collector-emitter voltage VCE (V)
I
C
=1 mA
f =10.7 MHz
T
a
=25°C
Reverse transfer capacitance C
re
(pF)
(Common emitter)
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2480
3
SJC00116CED
Zrb IEGPIENF IE
bib gib brb grb bfb gfb
bob gob
−0.1 −1−10
Reverse transfer impedance Z
rb
(Ω)
0
120
100
80
60
40
20
V
CB
=10 V
f =2 MHz
T
a
=25°C
Emitter current IE(mA)
−0.1 −1−10 −100
Power gain G
P
(dB)
0
40
35
30
25
20
15
10
5
V
CB
=10 V
f =100 MHz
R
g
=50 Ω
T
a
=25°C
Emitter current I
E
(mA)
Noise figure NF (dB)
0
12
10
8
6
4
2
−0.1 −1−10 −100
V
CB
=10 V
f =100 MHz
R
g
=50 kΩ
T
a
=25°C
Emitter current I
E
(mA)
−60
05040302010
0
−10
−20
−30
−40
−50
Input conductance gib (mS)
Input susceptance b
ib
(mS)
y
ib
=g
ib
+jb
ib
V
CB
=10 V
f =900 MHz
I
E
=−2 mA
−5 mA
300
500
600
200
−2.4
−1.0 0−0.2−0.4−0.6−0.8
0
−0.4
−0.8
−1.2
−1.6
−2.0
f =900 MHz
I
E
=−5 mA
−2 mA
300
500
600
200
Reverse transfer conductance grb (mS)
Reverse transfer susceptance b
rb
(mS)
y
rb
=g
rb
+jb
rb
V
CB
=10 V
0
−60 40200−20−40
48
40
32
24
16
8
−2 mA
300
500
600
900
f =200 MHz
IE=−5 mA
Forward transfer conductance gfb (mS)
Forward transfer susceptance bfb (mS)
yfb =gfb +jbfb
VCB =10 V
0
0 2.01.61.20.80.4
12
10
8
6
4
2
−5 mA
300
500
600
900
f =200 MHz
IE=−2 mA
Output conductance g
ob
(mS)
Output susceptance b
ob
(mS)
yob =gob +jbob
VCE =10 V
This product complies with the RoHS Directive (EU 2002/95/EC).

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