Panasonic Transistors 2SC3938G User manual

Transistors
1
Publication date: April 2007 SJC00364AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3938G
Silicon NPN epitaxial planar type
For high-speed switching
■Features
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB =40 V, IE=0 0.1 µA
Emitter-base cutoff current (Collector open) IEBO VEB =4 V, IC=0 0.1 µA
Forward current transfer ratio *hFE VCE =1 V, IC=10 mA 60 200 
Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1 mA 0.17 0.25 V
Base-emitter saturation voltage VBE(sat) IC=10 mA, IB=1 mA 1 V
Transition frequency fTVCB =10 V, IE=−10 mA, f =200 MHz 450 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time ton Refer to the measurement circuit 17 ns
Turn-off time toff 17 ns
Storage time tstg 10 ns
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (E-B short) VCES 40 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC100 mA
Peak collector current ICP 300 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Rank Q R
hFE 60 to 120 90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■Package
•Code
SMini3-F2
•Marking Symbol: 2Y
•Pin Name
1. Base
2. Emitter
3. Collector

2SC3938G
2SJC00364AED
This product complies with the RoHS Directive (EU 2002/95/EC).
hFE ICfTIECob VCB
ICVCE VCE(sat) ICVBE(sat) IC
220 Ω
0.1 µF
50 Ω
V
CC
= 3 V
V
OUT
3.3 kΩ
50 Ω
V
IN
= 10 V
3.3 kΩ
V
BB
= −3 V
V
IN
V
OUT
t
on
90%
10%
90%
10%
t
off
(Waveform at A)
V
IN
V
OUT
10%
10%
t
stg
910 Ω
0.1 µF
0.1 µF
A
90 Ω
V
CC
= 10 V
V
OUT
500 Ω
50 Ω
V
IN
= 10 V
500 Ω
1 kΩ
V
BB
= 2 V
t
on
, t
off
test circuit t
stg
test circuit
Measurement circuit
PCTa
0 16040 12080 14020 10060
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0 1.21.00.80.2 0.60.4
0
120
100
80
60
40
20
T
a
=25°C
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
I
B
=3.0 mA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
1 10 100 1 000
0.01
0.1
1
10
100
T
a
=−25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
600
500
400
300
200
100
VCE =1 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−1−10 −100 −1 000
0
600
500
400
300
200
100
VCB =10 V
Ta=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
110100
0
6
5
4
3
2
1
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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