Panasonic 2SD1821A User manual

Transistors
Publication date : October 2008 SJC00425AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
Features
High collector-emitter voltage (Base open) VCEO
Low noise voltage NV
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 185 V
Collector-emitter voltage (Base open) VCEO 185 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC= 100 mA, IB= 0 185 V
Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE= 0 1 mA
Forward current transfer ratio *hFE VCE = 5 V, IC= 10 mA 130 330 
Collector-emitter saturation voltage VCE(sat) IC= 30 mA, IB= 3 mA 1 V
Transition frequency fTVCB = 10 V, IE= –10 mA, f = 200 MHz 150 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE= 0, f = 1 MHz 2.3 pF
Noise voltage NV VCB = 10 V, IC= 1 mA, GV= 80 dB,
Rg= 100 kΩ, Function = FLAT 150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S
hFE 130 to 220 185 to 330
Package
Code
SMini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: L

2SD1821A
2SJC00425AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE IC fTIE
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0 121082 64
0
120
100
80
60
40
20
Ta=25°C
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
IB=2.0 mA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
25°C
−25°C
Ta=75°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
600
500
400
300
200
100
VCE =10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−1−10 −100
0
200
160
120
80
40
VCB =10 V
Ta=25°C
Transition frequency fT(MHz)
Emitter currentIE(mA)
1 10 100
0
5
4
3
2
1
Collector-base voltage VCB (V)
IE=0
f =1 MHz
Ta=25°C
Collector output capacitance (Common base, input open circuited) Cob (pF)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
VCE =10 V
Ta=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
Cob VCB
PCTaICVCE ICVBE

2SD1821A
SJC00425AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-G1 Unit: mm
(0.65)
1.3 ±0.1
(0.65)
0.3
1.25 ±0.10 (0.425)
2.1 ±0.1
2.0 ±0.2
3
21
10°
0.9 ±0.10 to 0.1
0.9
5°
0.2 ±0.1
0.15
+0.1
−0.0
+0.2
−0.1
+0.10
−0.05

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semiconductors described in this book
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