Panasonic Schottky Barrier Diodes MA3S795EG User manual

Schottky Barrier Diodes (SBD)
Publication date: October 2008 SKH00236AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S795EG
Silicon epitaxial planar type
For switching
For wave detection
Features
High-density mounting is possible
Forward voltage VF, optimum for low voltage rectification:VF<0.3 V
Optimum for high frequency rectification because of its short
reverse recovery time trr
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current Single IF
30 mA
Double 20
Peak forward current Single IFM
150 mA
Double 110
Junction temperature Tj125 °C
Storage time Tstg –55 to +125 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF= 1 mA 0.3 V
VF2 IF= 30 mA 1.0
Reverse current IRVR= 30 V 30 mA
Terminal capacitance CtVR= 1 V, f = 1 MHz 1.5 pF
Reverse recovery time *trr
IF= IR= 10 mA, Irr = 1 mA,
RL= 100 W1.0 ns
Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz
RL= 3.9 kW, CL= 10 pF 65 %
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF=10 mA
IR=10 mA
RL=100 Ω
10%
Input Pulse Output Pulse
Irr =1 mA
trtp
trr
VR
IF
t
t
A
Package
Code
SSMini3-F3
Pin Name
1: Anode 1
2: Anode 2
3: Cathode
Marking Symbol: M3D
Internal Connection
1 2
3

MA3S795EG
2SKH00236AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVR
10–2
0 0.4 0.8 1.2 1.6 2.0 2.4
10–1
1
10
102
103
Forward voltage VF(V)
Forward current IF(mA)
Ta=125°C−20°C
75°C25°C
10−1
0 5 10 15 20 25 30
1
10
102
103
104
Reverse voltage VR(V)
Reverse current IR(µA)
Ta=125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160 200
Ambient temperature Ta(°C)
Forward voltage VF(V)
IF=30 mA
10 mA
1 mA
10−1
−40 0 40 80 120 160 200
1
10
102
103
104
Ambient temperature Ta(°C)
Reverse current IR(µA)
VR=25 V
3 V
1 V
0
3.0
2.5
2.0
1.5
1.0
0.5
0 5 10 15 20 25 30
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
f =1 MHz
Ta=25°C

MA3S795EG
SKH00236AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05 −0.03
0.26 +0.05 −0.02
1 2
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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