Panasonic 2SC6036 User manual

Transistors
Publication date : December 2004 SJC00324AED 1
2SC6036
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2162
 Features
 Low collector-emitter saturation voltage VCE(sat)
 SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
 Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 12 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC500 mA
Peak collector current ICP 1A
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
 Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 12 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1µA
Forward current transfer ratio hFE VCE = 2 V, IC = 10 mA 270 680 
Collector-emitter saturation voltage VCE(sat) IC = 200 mA, IB = 10 mA 250 mV
Transition frequency fTVCB = 2 V, IE = –10 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, f = 1 MHz 4.5pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collecter SSSMini3-F1 Package
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5°
0.15 min.
0.80±0.050.15 min.
0.33
(0.40)(0.40)
1 2
3
5°
0.80±0.05
1.20±0.05
+0.05
−0.02 0.10+0.05 −0.02
0.23+0.05
−0.02
Marking Symbol : 4U
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC6036
2 SJC00324AED
PC  Ta IC  VCE IC  VBE
VCE(sat)  IC hFE  IC Cob  VCB
020 40 60 80 100 120 140
0
20
40
60
80
100
120
2SC6036_ PC-Ta
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
0 1 2 3 4 5 6
0
20
40
60
80
100
120
2SC6036_ IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
IB = 160 µA
Ta = 25°C
00.2 0.4 0.6 0.8 1.0 1.2 1.4
0
10
20
30
40
50
60
100
70
80
90
2SC6036_ IC-VBE
Collector current IC (mA)
Base-emitter voltage VBE (V)
VCE = 2 V
Ta = 85°C
25°C
−25°C
1 10 100 1 000
0.01
0.1
1
2SC6036_ VCE(sat)-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
IC / IB = 20
Ta = 85°C
25°C
−25°C
1 10 100 1 000
0
100
200
300
400
500
700
600
2SC6036_ hFE-IC
Forward current transfer ratio hFE
Collector current IC (mA)
VCE = 2V
Ta = 85°C
25°C
−25°C
0 5 10 15 20 25 30 35 40
1
10
2SC6036_ Cob-VCB
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
f = 1 MHz
Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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