Samsung FLEX-MUXONENAND KFKAGH6Q4M User manual

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 1 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
.
KFM4GH6Q4M
KFN8GH6Q4M
KFKAGH6Q4M
4Gb Flex-MuxOneNAND M-die
* Samsung Electronics reserves the right to change products or specification without notice.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
Flex-MuxOneNAND‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be
claimed as the property of their rightful owners.

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Revision History
Document Title
Flex-MuxOneNAND
Revision History
Revision No.
0.0
0.1
History
1. Initial issue.
1. Corrected errata.
2. Chapter 1.3 Product Features revised.
3. Chapter 2.8.16 Start Address8 Register F107 revised.
4. Chapter 2.8.18 Command Register F220h revised.
5. Chapter 2.8.19 System Configuration 1 Register F221h corrected errata.
6. Chapter 2.8.21 Controller Status Register F240h revised.
7. Chapter 2.8.22 Interrupt Status Register F241h revised.
8. Chapter 3.1.2 Load Data Into Buffer Command.
9. Chapter 3.3 Reset Mode Operation revised.
10. Chapter 3.3.1 Cold Reset Mode Operation revised.
11. Chapter 3.4.3 NAND Array Write Protection States corrected errata.
12. Chapter 3.4.3.1 Unlocked NAND Array Write Protection State.
13. Chapter 3.4.4 Data Protection Operation Flow Diagram revised.
14. Chapter 3.4.4 All Block Unlock Flow Diagram revised.
15. Chapter 3.6 Load Operation Flow Chart Diagram revised.
16. Chapter 3.6.1 Superload Operation revised.
17. Chapter 3.6.2 LSB Page Recovery Read updated.
18. Chapter 3.8 Synchronous Write revised.
19. Chapter 3.9 Program Operation Flow Diagram revised.
Program Interleave Flow Chart updated.
20. Chapter 3.9.1 Cache Program Operation Flow diagram revised.
21. Chapter 3.9.2 Interleave Cache Program Operation revised.
22. Chapter 3.10 Copy-Back Program Operation with Random Data Input
Flow Chart revised.
23. Chapter 3.11.1 Block Erase Operation Flow Chart revised.
Erase Interleave Flow Chart updated.
24. Chapter 3.12 Partition Information Block corrected errata.
25. Chapter 3.12.1 PI Block Load Operation revised.
26. Chapter 3.12.2 PI Block Boundary Information setting updated.
27. OTP Operation revised.
28. Chapter 3.13.2 OTP Block Program Operation revised.
29. Chapter 3.13.3 OTP Block Lock Operation and Flow Chart revised.
30. Chapter 3.13.4 1st Block OTP Lock Operation revised.
31. Chapter 3.13.5 OTP and 1st Block OTP Lock Operation revised.
32. Chapter 3.16 Invalid Block Operation revised.
33. Chapter 4.1 Absolute Maximum Ratings revised.
34. Chapter 4.2 Operating Conditions revised.
35. Chapter 4.3 DC Characteristics revised.
36. Chapter 5.1 AC Test Conditions revised.
37. Chapter 5.3 Valid Block Characteristics revised.
38. Chapter 5.4 AC Characteristics for Synchronous Burst Read revised.
39. Chapter 5.8 AC Characteristics for Burst Write Operation revised.
40. Chapter 5.9 AC Characteristics for Load/Program/Erase Performance
revised.
41. Chapter 6.15 Cold Reset Timing revised.
42. Chapter 7.3 Partition of Flex-MuxOneNAND corrected errata.
Draft Date
Nov. 28, 2006
Aug. 13, 2007
Remark
Advanced
Preliminary

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Revision History
Revision No.
0.2
1.0
1.1
History
1. Corrected errata.
2. Chapter 2.1 Detailed Product Description revised.
3. Chapter 2.2 Definitions revised.
4. Chapter 2.8.3 Device ID Register F001h(R) revised.
5. Chapter 2.8.8 Technology Register F006h(R) revised.
6. Chapter 2.8.10 Start Address2 Register F101h(R/W) revised.
7. Chapter 2.8.16 Start Address8 Register F107h(R/W) revised.
8. Chapter 2.8.18 Command Register F220h(R/W) revised.
9. Chapter 2.8.22 Interrupt Status Register F241h(R/W) revised.
10. Chapter 3.1 Command Based Operation revised.
11. Chapter 3.3 Reset Mode Operation revised.
12. Chapter 3.4.3 NAND Array Write Protection States revised.
13. Chapter 3.4.3.1 Unlocked NAND Array Write Protection State revised.
14. Chapter 3.4.3.3 Locked-tight NAND Array Write Protection State
revised.
15. Chapter 3.4.4 NAND Flash Array Write Protection State Diagram
revised.
16. Chapter 3.6.2 LSB Page Recovery Read revised.
17. Chapter 3.7.2 Synchronous Read Mode Operation revised.
18. Chapter 3.7.2.1 Continuous Linear Burst Read Operation revised.
19. Chapter 3.9 Program Operation revised.
20. Chapter 3.9.1 Cache Program Operation revised.
21. Chapter 3.9.2 Interleave Cache Program Operation revised.
22. Chapter 3.11.1 Block Erase Operation revised.
23. Chapter 3.11.2 Erase Suspend / Erase Resume Operation revised.
24. Chapter 3.12 Partition Information (PI) Block(SLC Only) revised.
25. Chapter 3.12.1 PI Block Boundary Information setting revised.
26. Chapter 3.12.1.1 PI Block Access mode entry revised.
27. Chapter 3.12.1.2 PI Block Erase revised.
28. Chapter 3.12.1.3 PI Block Program Operation revised.
29. Chapter 3.12.1.4 PI Update revised.
30. Chapter 3.13 OTP Operation (SLC only) revised.
31. Chapter 3.13.1 OTP Block Load Operation revised.
32. Chapter 3.16.2 Invalid Block Replacement Operation revised.
33. Chapter 5.5 AC Characteristics for Asynchronous Read revised.
34. Chapter 6.3 Asynchronous Read(VA Transition Before AVD Low) tOEH
removed.
35. Chapter 6.4 Asynchronous Read(VA Transition After AVD Low) tOEH
removed.
36. Chapter 7.4 DDP and QDP Description inserted.
1. New Format(font size, color etc.)
2. Corrected errata.
3. Added a comment(Chapter 3.11.1 & 3.12.1.2 & 3.12.1.3 & 3.12.1.4)
4. Chapter 2.8.17 Start Buffer Register F200h (R/W) revised.
5. Chapter 3.1.2 Load Data Into Buffer Command revised.
6. Chapter 3.12.2 PI Block Load Operation revised.
7. Chapter 4.3 DC Characteristics revised.
1. Chapter 3.6.2 LSB Page Recovery read flow chart revised.
2. Chapter 3.9.1 Cache Program Operation revised.
3. Chapter 3.13.1 OTP Block Read Operation Flow Chart revised.
4. Chapter 3.13.2 OTP Block Program Operation Flow Chart revised.
5. Chapter 3.13.3 OTP Block Lock Operation Flow Chart revised.
6. Chapter 3.13.4 1st Block OTP Lock Operation revised.
7. Chapter 3.13.5 OTP and 1st Block OTP Lock Operation Flow Chart
revised.
Draft Date
Oct. 30, 2007
Feb. 04, 2008
Aug. 07, 2008
Remark
Preliminary
Final
Final

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
1.0 INTRODUCTION
This specification contains information about the Samsung Electronics Company Flex-MuxOneNAND‚ Flash memory product family. Sec-
tion 1.0 includes a general overview, revision history, and product ordering information.
Section 2.0 describes the Flex-MuxOneNAND device. Section 3.0 provides information about device operation. Electrical specifications and
timing waveforms are in Sections 4.0 through 6.0. Section 7.0 provides additional application and technical notes pertaining to use of the Flex-
MuxOneNAND. Package dimensions are found in Section 8.0
1.1 Ordering Information
Density Part No. VCC(core & IO) Temperature PKG
4Gb KFM4GH6Q4M-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF)
8Gb KFN8GH6Q4M-DEBX 1.8V(1.7V~1.95V) Extended 63FBGA(LF)
16Gb(TBD) KFKAGH6Q4M-DEBX 1.8V(1.7V~1.95V) Extended 63FBGA(LF)
K F x x H 6 Q 4 M - D E x x
Samsung
OneNAND Memory
Device Type
M : Mux type Single Chip
N : Mux type Dual Chip
K: Mux type Quad Chip
Density
4G : 4Gb
8G : 8Gb
AG : 16Gb(TBD)
Operating Temperature Range
E = Extended Temp. (-30 C to 85 C)
Page Architecture
4: 4KB Page
Version
1st Generation
Product Line designator
B : Include Bad Block
D : Daisy Sample
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
Package
D : FBGA(Lead Free)
Organization
6: x16 Organization
Speed
6 : 66MHz
8 : 83MHz
Technology
H : Flex

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
1.2 General Overview
Flex-MuxOneNANDis a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface.
The chip integrates system features including:
A BootRAM(1KB) and bootloader
4KB DataRAM buffers
A High-Speed x16 Host Interface
On-chip Error Correction
On-chip NOR interface controller
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications that
would otherwise have to use more NOR components.
Flex-MuxOneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the
synchronous read performance of NOR. The NOR Flash host interface makes Flex-MuxOneNAND an ideal solution for mobile applications
that have large, advanced multimedia applications and operating systems and need high performance.
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-performance, small
footprint solution.
The device operates up to a maximum host-driven clock frequency of 66MHz / 83MHz for synchronous reads at Vcc(or Vccq. Refer to chapter
4.2) with 4~7-clock latency. Appropriate wait cycles are determined by programmable read latency.
Flex-MuxOneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter register.
The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block OTP(Block 0) that can be used to
increase system security or to provide identification capabilities.

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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
1.3 Product Features
Device Architecture
Design Technology:
Supply Voltage:
Host Interface:
5KB Internal BufferRAM:
NAND Array:
Device Performance
Host Interface Type:
Programmable Burst Read Latency:
Multiple Reset Modes:
Low Power Dissipation:
Reliable CMOS Floating-Gate Technology
System Hardware
Voltage detector generating internal reset signal from Vcc
Hardware reset input (RP)
Data Protection Modes
User-controlled One Time Programmable(OTP) area
Internal 4bit ECC
Internal Bootloader supports Booting Solution in system
Handshaking Feature
Detailed chip information
Package size
4G products
8G products
16G products(TBD)
M die
1.8V (1.7V ~ 1.95V)
16 bit
1KB BootRAM, 4KB DataRAM
SLC : (4K+128)B Page Size
(256K+8K)B Block Size (64pages)
MLC : (4K+128)B Page Size
(512K+16K)B Block Size (128pages)
Synchronous Burst Read
- Up to 66MHz / 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K words Sequential Burst
Synchronous Write
- Up to 66MHz / 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with wrap around
- Continuous 1K words Sequential Burst
Asynchronous Random Read
- 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7
1~40MHz : Latency 3 available
1~66MHz : Latency 4,5,6 and 7 available
Over 66MHz : Latency 6,7 available
Cold/Warm/Hot/NAND Flash Core Reset
Typical Power,
- Standby current : 10uA (Single)
- Synchronous Burst Read current(66MHz/83MHz, single) : 20/25mA
- Synchronous Burst Write current(66MHz/83MHz, single) : 20/25mA
- Load current : 50mA
- Program current : 35mA
- Erase current : 40mA
- Endurance : 50K Program/Erase Cycles (SLC)
10K Program/Erase Cycles (MLC)
- Data Retention : 10 Years(SLC) /10 Years(MLC)
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.4mmt , 0.8mm ball pitch FBGA (TBD)

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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.0 DEVICE DESCRIPTION
2.1 Detailed Product Description
The Flex-MuxOneNAND is an advanced generation, high-performance MLC NAND-based Flash memory(Which can be programmed as both
SLC and MLC).
It integrates on-chip a convertible(SLC and MLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page
buffer for the Flash array, and a one-time-programmable block.
The combination of these memory areas enable high-speed pipelining of reads from hostBufferRAMPage Bufferand NAND Flash Array.
Clock speeds up to 66MHz / 83MHz with a x16 wide I/O yields a 83MByte/second in SLC and 71MByte/second in MLC read bandwidth
The Flex-MuxOneNAND also includes a Boot RAM and boot loader. This enables the device to efficiently load boot code at device startup
from the NAND Array without the need for off-chip boot device.
One block of the NAND Array is set aside as an OTP memory area, and 1st Block (Block 0) can be used as OTP area. This area, available to
the user, can be configured and locked with secured user information.
On-chip controller interfaces enable the device to operate in systems without NAND Host controllers.
2.2 Definitions
B (capital letter) Byte, 8bits
W (capital letter) Word, 16bits
b (lower-case letter) Bit
ECC Error Correction Code
Calculated ECC ECC that has been calculated during a load or program access
Written ECC ECC that has been stored as data in the NAND Flash array or in the BufferRAM
BufferRAM On-chip internal buffer consisting of BootRAM and DataRAM
BootRAM A 1KB portion of the BufferRAM reserved for Boot Code buffering
DataRAM A 4KB portion of the BufferRAM reserved for Data buffering (2KB x2)
Sector Part of a Page of which 512B is the main data area and 16B is the spare data area.
Data unit Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 4224B of which 4096 is in main area and 128B in spare area
DDP Dual Die Package
QDP Quad Die Package
OTP One Time Programmable

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.3 Pin Configuration
2.3.1 4Gb (KFM4GH6Q4M) / 8Gb (KFN8GH6Q4M)
(TOP VIEW, Balls Facing Down)
63ball FBGA Flex-MuxOneNAND Chip
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA(4Gb)
63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA (8Gb)
NC NC NC NC
NC NC NC
NC NC NC NC
NC NC NC NC
INT NC NC NC NC NC
WE RP ADQ1 VSS VSS ADQ2
ADQ3 ADQ7 ADQ14 OE ADQ6 VCC
ADQ8 ADQ11 ADQ4 ADQ5 ADQ12 VCC
ADQ0 NC ADQ15 ADQ10 ADQ9
CE ADQ13 NC NC NC
AVD NC NC NC
NC NC NC NC NC
Core
IO
CLK
NC
NC
NC
RDY

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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.3.2 16Gb Product (KFKAGH6Q4M) (TBD)
(TOP VIEW, Balls Facing Down)
63ball FBGA OneNAND Chip
63ball, 10mm x 13mm x max 1.4mmt , 0.8mm ball pitch FBGA
NC NC NC NC
NC NC NC
CE2
INT2
NC NC NC NC
NC NC NC NC
INT1 NC NC NC NC NC
WE RP ADQ1 VSS VSS ADQ2
ADQ3 ADQ7 ADQ14 OE ADQ6 VCC
ADQ8 ADQ11 ADQ4 ADQ5 ADQ12 VCC
ADQ0 NC ADQ15 ADQ10 ADQ9
CE1 ADQ13 NC NC
AVD NC NC NC
NC NC NC NC
Core
IO
CLK
NC
NC
NC
RDY

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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.4 Pin Description
NOTE :
Do not leave power supply(Vcc-Core/Vcc-IO, VSS) disconnected.
Pin Name Type Nameand Description
Host Interface
ADQ15~ADQ0 I/O
Multiplexed Address/Data bus
- Inputs for addresses during read operation, which are for addressing BufferRAM & Register.
- Inputs data during program and commands for all operations, outputs data during memory array/
register read cycles.
Data pins float to high-impedance when the chip is deselected or outputs are disabled.
INT / INT1 O
Interrupt
Notifies the Host when a command is completed. After power-up, it is at hi-z condition. Once IOBE is set to 1, it does not float
to hi-z condition even when CE is disabled or OE is disabled. Especially, only when reset(Cold, Warm, Hot, NAND Flash
Core) command in DDP are issued, it operates as open drain output with internal resistor (~50Kohm). The INT is the interrupt
for Single or DDP device. The INT1 is the interrupt for the first DDP device(KFN8GH6Q4M) in QDP(KFKAGH6Q4M)
INT2 O Interrupt
The INT2 is the interrupt for the second DDP device(KFN8GH6Q4M) in QDP(KFKAGH6Q4M)
RDY O Ready
Indicates data valid in synchronous read modes and is activated while CE is low
CLK I
Clock
CLK synchronizes the device to the system bus frequency in synchronous read mode.
The first rising edge of CLK in conjunction with AVD low latches address input.
WE IWrite Enable
WE controls writes to the bufferRAM and registers. Datas are latched on the WE pulse’s rising edge
AVD I
Address Valid Detect
Indicates valid address presence on address inputs. During asynchronous read operation, all addresses are valid while AVD
is low, and during synchronous read operation, all addresses are latched on CLK’s rising edge while AVD is held low for one
clock cycle.
> Low : for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched on rising edge
on CLK
> High : device ignores address inputs
RP I
Reset Pin
When low, RP resets internal operation of Flex-MuxOneNAND. RP status is do not care during power-up
and bootloading. When high, RP level must be equivalent to Vcc-IO / Vccq level.
CE / CE1 I
Chip Enable
CE-low activates internal control logic, and CE-high deselects the device, places it in standby state,
and places DQ in Hi-Z.
The CE input enables device for Single or DDP .
The CE1 input enables the first DDP device(KFN8GH6Q4M) in QDP(KFKAGH6Q4M)
CE2 IChip Enable
The CE2 input enables the second DDP device(KFN8GH6Q4M) in QDP(KFKAGH6Q4M)
OE IOutput Enable
OE-low enables the device’s output data buffers during a read cycle.
Power Supply
VCC-Core
/ Vcc
Power for Flex-MuxOneNAND Core
This is the power supply for Flex-MuxOneNAND Core.
VCC-IO
/ Vccq
Power for Flex-MuxOneNAND I/O
This is the power supply for Flex-MuxOneNAND I/O
Vcc-IO / Vccq is internally separated from Vcc-Core / Vcc.
VSS Ground for Flex-MuxOneNAND
etc.
DNU Do Not Use
Leave it disconnected. These pins are used for testing.
NC No Connection
Lead is not internally connected.

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Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.5 Block Diagram
2.6 Memory Array Organization
The Flex-MuxOneNAND architecture integrates several memory areas on a single chip.
2.6.1 Internal (NAND Array) Memory Organization
The on-chip internal memory is a convertible(SLC and MLC) NAND array used for data storage and code. The internal memory is divided into
a main area and a spare area.
Main Area
The main area is the primary memory array. A block incorporates 64pages(SLC) or 128pages(MLC). A main page size is 4KB and a main
page is comprised of 8 sectors each size of which is 512Byte.
Spare Area
The spare area is used for invalid block information and ECC storage. Spare area internal memory is associated with corresponding main area
memory. A spare page size is 128B and a spare page is comprised of 8 sectors each size of which is 16Byte.
BootRAM
StateMachine
Bootloader
Internal Registers
(Address/Command/Configuration
/Status Registers)
Error
Correction
Logic
DataRAM0
BufferRAM
NAND Flash
Array
OTP
(One Block)
DataRAM1
1st Block OTP
Host Interface
CLK
OE
WE
RP
AVD
INT/INT1
RDY
ADQ15~ADQ0
CE2
CE / CE1
(Block 0)
INT2

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Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Internal Memory Array Information
Internal Memory Array Organization
Area Block Page Sector
Main(SLC) 256KB 4KB 512B
Main(MLC) 512KB
Spare(SLC) 8KB 128B 16B
Spare(MLC) 16KB
4KB Page0
512B 16B
128B Page0
4KB Page127 128B Page127
Sector
Main Area Spare Area
Block(MLC)
Page
Main Area Spare Area
4KB(512Bx8) 128B(16Bx8)
Main Area Spare Area
512KB 16KB
Page 0
Page 127
4KB Page0 128B Page0
4KB Page63 128B Page63
Block(SLC)
Main Area Spare Area
256KB 8KB
Page 0
Page 63
Sector0 Sector1 Sector2 Sector3 Sector4 Sector5 Sector6 Sector7
Sector0 Sector1 Sector2 Sector3 Sector4 Sector5 Sector6 Sector7

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Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.6.2 External (BufferRAM) Memory Organization
The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering.
The BootRAM is a buffer that receives Boot Code from the internal memory and makes it available to the host at start up.
There are 4KB bi-directional data buffers(2KB x2), DataRAM0 and DataRAM1. During Boot Up, the BootRam is used by the host to initialize
the main memory, and deliver boot code from NAND Flash core to host.
The external memory is divided into a main area and a spare area. Each buffer is the equivalent size of a Sector.
The main area data is 512B. The spare area data is 16B.
External Memory Array Information
External Memory Array Organization
Area BootRAM DataRAM0 DataRAM1
Total Size 1KB+32B 2KB+64B 2KB+64B
Number of Sectors 2 4 4
Sector Main 512B 512B 512B
Spare 16B 16B 16B
Host
OTP Block
Nand Array
Boot code
BootRAM (1KB)
DataRAM0 (2KB)
DataRAM1 (2KB)
External (BufferRAM)
Memory
Internal (Nand Array)
Memory
BootRAM 0
BootRAM 1
BootRAM
DataRAM 1_0
DataRAM 1_1
DataRAM 1_2
DataRAM 1_3
DataRAM1

Main area data Spare area data
DataRAM 0_0
DataRAM 0_1
DataRAM 0_2
DataRAM 0_3
DataRAM0
Sector: (512 + 16) Byte

(512B) (16B)
4KByte

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 14 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.7 Memory Map
The following tables are the memory maps for the Flex-MuxOneNAND.
2.7.1 Internal (NAND Array) Memory Organization
The following tables show the Internal Memory address map in word order.
* Only four sectors are addressable, see Start Address Register .
Block Block Address
[F100h]
Page Address
[F107h] Size Block Block Address [F100h]
Page Address
[F107h] Size
Block0 0000h 0000h~00FCh 256KB Block32 0020h
SLC:
0000h~00FCh*,
MLC:
0000h~01FCh*
SLC:
256KB,
MLC:
512KB
Block1 0001h
SLC:
0000h~00FCh*,
MLC:
0000h~01FCh*
SLC:
256KB,
MLC:
512KB
Block33 0021h
Block2 0002h Block34 0022h
Block3 0003h Block35 0023h
Block4 0004h Block36 0024h
Block5 0005h Block37 0025h
Block6 0006h Block38 0026h
Block7 0007h Block39 0027h
Block8 0008h Block40 0028h
Block9 0009h Block41 0029h
Block10 000Ah Block42 002Ah
Block11 000Bh Block43 002Bh
Block12 000Ch Block44 002Ch
Block13 000Dh Block45 002Dh
Block14 000Eh Block46 002Eh
Block15 000Fh Block47 002Fh
Block16 0010h Block48 0030h
Block17 0011h Block49 0031h
Block18 0012h Block50 0032h
Block19 0013h Block51 0033h
Block20 0014h Block52 0034h
Block21 0015h Block53 0035h
Block22 0016h Block54 0036h
Block23 0017h Block55 0037h
Block24 0018h Block56 0038h
Block25 0019h Block57 0039h
Block26 001Ah Block58 003Ah
Block27 001Bh Block59 003Bh
Block28 001Ch Block60 003Ch
Block29 001Dh Block61 003Dh
Block30 001Eh Block62 003Eh
Block31 001Fh Block63 003Fh

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 15 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Block Block Address
[F100h]
Page Address
[F107h] Size Block Block Address [F100h]
Page Address
[F107h] Size
Block64 0040h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block96 0060h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block65 0041h Block97 0061h
Block66 0042h Block98 0062h
Block67 0043h Block99 0063h
Block68 0044h Block100 0064h
Block69 0045h Block101 0065h
Block70 0046h Block102 0066h
Block71 0047h Block103 0067h
Block72 0048h Block104 0068h
Block73 0049h Block105 0069h
Block74 004Ah Block106 006Ah
Block75 004Bh Block107 006Bh
Block76 004Ch Block108 006Ch
Block77 004Dh Block109 006Dh
Block78 004Eh Block110 006Eh
Block79 004Fh Block111 006Fh
Block80 0050h Block112 0070h
Block81 0051h Block113 0071h
Block82 0052h Block114 0072h
Block83 0053h Block115 0073h
Block84 0054h Block116 0074h
Block85 0055h Block117 0075h
Block86 0056h Block118 0076h
Block87 0057h Block119 0077h
Block88 0058h Block120 0078h
Block89 0059h Block121 0079h
Block90 005Ah Block122 007Ah
Block91 005Bh Block123 007Bh
Block92 005Ch Block124 007Ch
Block93 005Dh Block125 007Dh
Block94 005Eh Block126 007Eh
Block95 005Fh Block127 007Fh

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 16 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Block Block Address
[F100h]
Page Address
[F107h] Size Block Block Address [F100h]
Page Address
[F107h] Size
Block128 0080h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block160 00A0h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block129 0081h Block161 00A1h
Block130 0082h Block162 00A2h
Block131 0083h Block163 00A3h
Block132 0084h Block164 00A4h
Block133 0085h Block165 00A5h
Block134 0086h Block166 00A6h
Block135 0087h Block167 00A7h
Block136 0088h Block168 00A8h
Block137 0089h Block169 00A9h
Block138 008Ah Block170 00AAh
Block139 008Bh Block171 00ABh
Block140 008Ch Block172 00ACh
Block141 008Dh Block173 00ADh
Block142 008Eh Block174 00AEh
Block143 008Fh Block175 00AFh
Block144 0090h Block176 00B0h
Block145 0091h Block177 00B1h
Block146 0092h Block178 00B2h
Block147 0093h Block179 00B3h
Block148 0094h Block180 00B4h
Block149 0095h Block181 00B5h
Block150 0096h Block182 00B6h
Block151 0097h Block183 00B7h
Block152 0098h Block184 00B8h
Block153 0099h Block185 00B9h
Block154 009Ah Block186 00BAh
Block155 009Bh Block187 00BBh
Block156 009Ch Block188 00BCh
Block157 009Dh Block189 00BDh
Block158 009Eh Block190 00BEh
Block159 009Fh Block191 00BFh

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 17 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Block Block Address
[F100h]
Page Address
[F107h] Size Block Block Address [F100h]
Page Address
[F107h] Size
Block192 00C0h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block224 00E0h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block193 00C1h Block225 00E1h
Block194 00C2h Block226 00E2h
Block195 00C3h Block227 00E3h
Block196 00C4h Block228 00E4h
Block197 00C5h Block229 00E5h
Block198 00C6h Block230 00E6h
Block199 00C7h Block231 00E7h
Block200 00C8h Block232 00E8h
Block201 00C9h Block233 00E9h
Block202 00CAh Block234 00EAh
Block203 00CBh Block235 00EBh
Block204 00CCh Block236 00ECh
Block205 00CDh Block237 00EDh
Block206 00CEh Block238 00EEh
Block207 00CFh Block239 00EFh
Block208 00D0h Block240 00F0h
Block209 00D1h Block241 00F1h
Block210 00D2h Block242 00F2h
Block211 00D3h Block243 00F3h
Block212 00D4h Block244 00F4h
Block213 00D5h Block245 00F5h
Block214 00D6h Block246 00F6h
Block215 00D7h Block247 00F7h
Block216 00D8h Block248 00F8h
Block217 00D9h Block249 00F9h
Block218 00DAh Block250 00FAh
Block219 00DBh Block251 00FBh
Block220 00DCh Block252 00FCh
Block221 00DDh Block253 00FDh
Block222 00DEh Block254 00FEh
Block223 00DFh Block255 00FFh

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 18 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Block Block Address
[F100h]
Page Address
[F107h] Size Block Block Address [F100h]
Page Address
[F107h] Size
Block256 0100h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block288 0120h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block257 0101h Block289 0121h
Block258 0102h Block290 0122h
Block259 0103h Block291 0123h
Block260 0104h Block292 0124h
Block261 0105h Block293 0125h
Block262 0106h Block294 0126h
Block263 0107h Block295 0127h
Block264 0108h Block296 0128h
Block265 0109h Block297 0129h
Block266 010Ah Block298 012Ah
Block267 010Bh Block299 012Bh
Block268 010Ch Block300 012Ch
Block269 010Dh Block301 012Dh
Block270 010Eh Block302 012Eh
Block271 010Fh Block303 012Fh
Block272 0110h Block304 0130h
Block273 0111h Block305 0131h
Block274 0112h Block306 0132h
Block275 0113h Block307 0133h
Block276 0114h Block308 0134h
Block277 0115h Block309 0135h
Block278 0116h Block310 0136h
Block279 0117h Block311 0137h
Block280 0118h Block312 0138h
Block281 0119h Block313 0139h
Block282 011Ah Block314 013Ah
Block283 011Bh Block315 013Bh
Block284 011Ch Block316 013Ch
Block285 011Dh Block317 013Dh
Block286 011Eh Block318 013Eh
Block287 011Fh Block319 013Fh

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 19 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Block Block Address
[F100h]
Page Address
[F107h] Size Block Block Address [F100h]
Page Address
[F107h] Size
Block320 0140h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block352 0160h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block321 0141h Block353 0161h
Block322 0142h Block354 0162h
Block323 0143h Block355 0163h
Block324 0144h Block356 0164h
Block325 0145h Block357 0165h
Block326 0146h Block358 0166h
Block327 0147h Block359 0167h
Block328 0148h Block360 0168h
Block329 0149h Block361 0169h
Block330 014Ah Block362 016Ah
Block331 014Bh Block363 016Bh
Block332 014Ch Block364 016Ch
Block333 014Dh Block365 016Dh
Block334 014Eh Block366 016Eh
Block335 014Fh Block367 016Fh
Block336 0150h Block368 0170h
Block337 0151h Block369 0171h
Block338 0152h Block370 0172h
Block339 0153h Block371 0173h
Block340 0154h Block372 0174h
Block341 0155h Block373 0175h
Block342 0156h Block374 0176h
Block343 0157h Block375 0177h
Block344 0158h Block376 0178h
Block345 0159h Block377 0179h
Block346 015Ah Block378 017Ah
Block347 015Bh Block379 017Bh
Block348 015Ch Block380 017Ch
Block349 015Dh Block381 017Dh
Block350 015Eh Block382 017Eh
Block351 015Fh Block383 017Fh

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 20 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Block Block Address
[F100h]
Page Address
[F107h] Size Block Block Address [F100h]
Page Address
[F107h] Size
Block384 0180h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block416 01A0h
SLC:
0000h~00FCh,
MLC:
0000h~01FCh
SLC:
256KB,
MLC:
512KB
Block385 0181h Block417 01A1h
Block386 0182h Block418 01A2h
Block387 0183h Block419 01A3h
Block388 0184h Block420 01A4h
Block389 0185h Block421 01A5h
Block390 0186h Block422 01A6h
Block391 0187h Block423 01A7h
Block392 0188h Block424 01A8h
Block393 0189h Block425 01A9h
Block394 018Ah Block426 01AAh
Block395 018Bh Block427 01ABh
Block396 018Ch Block428 01ACh
Block397 018Dh Block429 01ADh
Block398 018Eh Block430 01AEh
Block399 018Fh Block431 01AFh
Block400 0190h Block432 01B0h
Block401 0191h Block433 01B1h
Block402 0192h Block434 01B2h
Block403 0193h Block435 01B3h
Block404 0194h Block436 01B4h
Block405 0195h Block437 01B5h
Block406 0196h Block438 01B6h
Block407 0197h Block439 01B7h
Block408 0198h Block440 01B8h
Block409 0199h Block441 01B9h
Block410 019Ah Block442 01BAh
Block411 019Bh Block443 01BBh
Block412 019Ch Block444 01BCh
Block413 019Dh Block445 01BDh
Block414 019Eh Block446 01BEh
Block415 019Fh Block447 01BFh