SanDisk INAND User manual

SanDisk
Product Manual
Version 3.1
Document No. 80-36-00450
December 2006
SanDisk Corporation
Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035
Phone [phone] • Fax [phone]
www.sandisk.com

Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation i
SanDisk®Corporation general policy does not recommend the use of its products in life support applications where in a failure
or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk
products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages. See “Disclaimer
of Liability.”
This document is for information use only and is subject to change without prior notice. SanDisk Corporation assumes no
responsibility for any errors that may appear in this document, nor for incidental or consequential damages resulting from the
furnishing, performance or use of this material. No part of this document may be reproduced, transmitted, transcribed, stored in
a retrievable manner or translated into any language or computer language, in any form or by any means, electronic,
mechanical, magnetic, optical, chemical, manual or otherwise, without the prior written consent of an officer of SanDisk
Corporation.
All parts of the SanDisk documentation are protected by copyright law and all rights are reserved.
SanDisk and the SanDisk logo are registered trademarks of SanDisk Corporation. CompactFlash is a U.S. registered trademark
of SanDisk Corporation.
Product names mentioned herein are for identification purposes only and may be trademarks and/or registered trademarks of
their respective companies.
© 2006 SanDisk Corporation. All rights reserved.
SanDisk products are covered or licensed under one or more of the following U.S. Patent Nos. 5,070,032; 5,095,344; 5,168,465;
5,172,338; 5,198,380; 5,200,959; 5,268,318; 5,268,870; 5,272,669; 5,418,752; 5,602,987. Other U.S. and foreign patents
awarded and pending.
Lit. No. 80-36-00450 Rev. 3.1 12/06 Printed in U.S.A.
Revision History
September 2005 Revision 0.1—First draft of initial release
October 2005 Revision 0.2—Second draft of initial release
October 2005 Revision 0.3—Third draft of initial release
October 2005 Revision 1.0—Release
November 2005 Revision 1.1—Minor revision in Section 1.2; changed area in Table 1-1
January 2006 Revision 2.0—Added 4GB specifications
February 2006 Revision 2.1—Added footnote for MB/GB calculation in Section 2, 3 & App B
November 2006 Revision 3.0—Major revision to include high capacity information and other changes to the SDA spec;
updated contact information.
December 2006 Revision 3.1—Changed G8 pin from “VCORE” to “FCAP”; adjusted capacitor specifications.

Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation ii
TABLE OF CONTENTS
1. Introduction...................................................................................................1-1
1.1 General Description................................................................................1-1
1.2 Features...................................................................................................1-2
1.3 Document Scope.....................................................................................1-2
1.4 iNAND Standard ....................................................................................1-2
1.5 Functional Description............................................................................1-3
1.6 Technology Independence ......................................................................1-3
1.7 Defect and Error Management................................................................1-4
1.8 Wear Leveling.........................................................................................1-4
1.9 Automatic Sleep Mode ...........................................................................1-4
1.10 iNAND—SD Bus Mode........................................................................1-4
1.11 SPI Mode...............................................................................................1-6
2. Product Specifications...................................................................................2-1
2.1 Overview ................................................................................................2-1
2.2 Typical Card Power Requirements .........................................................2-1
2.3 System Performance...............................................................................2-1
2.4 System Reliability and Maintenance ......................................................2-1
2.5 Physical Specifications...........................................................................2-2
2.6 Capacity Specifications ..........................................................................2-4
3. iNAND Interface Description .......................................................................3-1
3.1 Pins and Registers...................................................................................3-1
3.2 Bus Topologies .......................................................................................3-2
3.3 Electrical Interface..................................................................................3-3
3.4 iNAND Registers....................................................................................3-3
3.5 Data Interchange Format and Card Sizes ...............................................3-3
4. iNAND Protocol Description........................................................................4-1
4.1 General ...................................................................................................4-1
4.2 SD Bus Protocol .....................................................................................4-1
4.3 Functional Description............................................................................4-1
Appendix A Capacitor Specifications..........................................................A-1
Appendix B Ordering Information ..............................................................B-1
Appendix C SanDisk Worldwide Sales Offices...........................................C-1
Appendix D Limited Warranty....................................................................D-1
Appendix E Disclaimer of Liability............................................................. E-1

Chapter 1 – Introduction
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 1-1 12/07/06
1 Introduction
1.1 General Description
The SanDisk iNAND is a very small, flash storage device, designed specifically for storage
applications that put a premium on small form factor, low power and low cost. Flash is the
ideal storage medium for portable, battery-powered devices. It features low power
consumption and is non-volatile, requiring no power to maintain the stored data. It also has
a wide operating range for temperature, shock and vibration.
iNAND is well-suited to meet the needs of small, low power, electronic devices. With a
form factor measuring 12mm by 18mm by 1.2mm, iNAND is expected to be used in a wide
variety of portable devices like mobile phones, pagers, and voice recorders.
To support this wide range of applications, iNAND is offered with an SD Interface. The SD
interface product is fully compatible with iNAND products, and provides a 4-bit data bus
for maximum performance. For compatibility with existing controllers, the iNAND offers,
in addition to these interfaces, an alternate communication-protocol based on the SPI
standard.
These interfaces allow for easy integration into any design, regardless of which type of
microprocessor is used.All device and interface configuration data (such as maximum
frequency and card identification) are stored on the device.
The SanDisk iNAND provides up to 4 GB of memory for use in mass storage applications.
In addition to the mass-storage-specific flash memory chip, iNAND includes an intelligent
controller, which manages interface protocols, data storage and retrieval, error correction
code (ECC) algorithms, defect handling and diagnostics, power management, wear
leveling, and clock control. Figure 1-1 is a block diagram of the SanDisk iNAND with SD
Interface.
Figure 1-1 SanDisk iNAND Block Diagram
SD Bus/SPI Bus
Interface Flash
Memory
SanDisk
Single Chip
Controller Control
Data In/Out
SanDisk iNAND

Chapter 1 – Introduction
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 1-2 12/07/06
1.2 Features
SanDisk iNAND product features include the following.
►Up to 4 GB of data storage
►SD-protocol compatible
►Supports SPI Mode
►Designed for portable and stationary applications that require high performance and reliable
data storage
►Voltage range 2.7 to 3.6V
►Variable clock rate 0-25 MHz (default), 0-50MHz (high-speed)
►Up to 25 MB/sec bus transfer rate (using 4 parallel data lines)
►Correction of memory-field errors
►Built-in write protection features (permanent and temporary)
►Application-specific commands
►Standard footprint across all capacities
1.3 Document Scope
This document describes the key features and specifications of the SanDisk iNAND as well
as the information required to interface it to a host system. Chapter 2 describes the physical
and mechanical properties of iNAND, Chapter 3 contains the pins and register overview,
and Chapter 4 gives a general overview of the SD protocol. Information about SPI Protocol
can be referenced in Section 7 of the SDA Physical Layer Specification, Version 2.00.
1.4 iNAND Standard
SanDisk iNAND devices are fully compatible with the SDA Physical Layer Specification,
Version 2.00.This specification is available from the SD Card Association (SDA).
SD Card Associations
2400 Camino Ramon, Suite 375
San Ramon, CA 94583 USA
Telephone: [phone]
Fax: [phone]
E-mail: [e-mail]
Website: www.sdcard.org

Chapter 1 – Introduction
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 1-3 12/07/06
1.5 Functional Description
The SanDisk iNAND contains a high-level, intelligent subsystem as shown in Figure 1-1.
This intelligent (microprocessor) subsystem provides many capabilities not found in other
types of memory cards. These capabilities include:
•Host independence from details of erasing and programming flash memory
•Sophisticated system for managing defects (analogous to systems found in magnetic
disk drives)
•Sophisticated system for error recovery including a powerful ECC
•Power management for low power operation
1.6 Technology Independence
The 512-byte sector size of the SanDisk iNAND is the same as that in an IDE magnetic
disk drive. To write or read a sector (or multiple sectors), the host software simply issues a
read or write command to the card. The command contains the address and number of
sectors to write or read. The host software then waits for the command to complete.
The host software does not get involved in the details of how the flash memory is erased,
programmed or read. This is extremely important because flash devices are expected to get
increasingly complex in the future. Because iNAND use an intelligent on-board controller,
host system software will not need to be updated as new flash memory evolves. In other
words, systems that support iNAND technology today will be able to access future SanDisk
devices built with new flash technology without having to update or change host software.

Chapter 1 – Introduction
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 1-4 12/07/06
1.7 Defect and Error Management
The SanDisk iNAND contains a sophisticated defect and error management system. This
system is analogous to the systems found in magnetic disk drives and in many cases offers
enhancements. If necessary, iNAND will rewrite data from a defective sector to a good
sector. This is completely transparent to the host and does not consume any user data space.
The soft error rate specification for iNAND is much better than the magnetic disk drive
specification. In the extremely rare case that a read error does occur, iNAND has
innovative algorithms to recover the data. These defect and error management systems,
coupled with the solid state construction, give SanDisk iNAND unparalleled reliability.
1.8 Wear Leveling
Wear-leveling is an intrinsic part of the erase pooling functionality of iNAND.
1.9 Automatic Sleep Mode
A unique feature of iNAND is automatic entrance and exit from sleep mode. Upon
completion of an operation, cards enter sleep mode to conserve power if no further
commands are received in less than 5 milliseconds (ms). The host does not have to take any
action for this to occur. However, in order to achieve the lowest sleep current, the host
needs to shut down its clock to the card. In most systems, cards are in sleep mode except
when accessed by the host, thus conserving power.
When the host is ready to access a card in sleep mode, any command issued to it will cause
it to exit sleep, and respond.
1.10 iNAND — SD Bus Mode
The following sections provide valuable information on SanDisk iNAND in SD Bus mode.
SanDisk iNAND devices are fully compliant with the SDA Physical Layer Specification,
Version 2.00. Card Specific Data (CSD) Register structures are compliant with CSD
Structure 1.0 and 2.0.
This section covers Negotiating Operating Conditions, Card Acquisition and Identification,
Card Status, Memory Array Partitioning, Read/Write Operations, Data Transfer Rate, Data
Protection in Flash Cards, Write Protection, Copy Bit, and CSD Register.
Additional practical card detection methods can be found in application notes pertaining to
the SDA Physical Layer Specification, Version 2.00.

Chapter 1 – Introduction
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 1-5 12/07/06
SanDisk iNAND Memory Module
Sector 1
Sector 2
Sector 3
Sector n
WP Group 0
Block
0
WP Group 1
WP Group 2
Block
1
Block
2
Block
n
Figure 1-2 Memory Array Partitioning
Figure 1-3 Data Transfer Formats
Multiple Block Mode
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Memory
Sectors
Start Address
(Write)
Start Address
(Read/Write)
Start Address
(Read)
Write
Start Address Stop Start
Read
Stop
Single Block Mode Misalignment Error

Chapter 1 – Introduction
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 1-6 12/07/06
Table 1-1 Mode Definitions
Mode Description
Single Block In this mode the host reads or writes one data block in a pre-specified length. The
data block transmission is protected with 16-bit CRC that is generated by the
sending unit and checked by the receiving unit.
The block length for read operations is limited by the device sector size (512 bytes)
but can be as small as a single byte. Misalignment is not allowed. Every data block
must be contained in a single physical sector.
The block length for write operations must be identical to the sector size and the
start address aligned to a sector boundary.
Multiple Block This mode is similar to the single block mode, except for the host can read/write
multiple data blocks (all have the same length) that are stored or retrieved from
contiguous memory addresses starting at the address specified in the command.
The operation is terminated with a stop transmission command.
Misalignment and block length restrictions apply to multiple blocks and are identical
to the single block read/write operations.
1.11 SPI Mode
The SPI Mode is a secondary communication protocol for iNAND devices. This mode is a
subset of the SD Protocol, designed to communicate with an SPI channel, commonly found
in Motorola and other vendors’ microcontrollers. Table 1-1 contains names and
descriptions of SPI Mode functions. More information about SPI Mode can be found in
Section 7 or the SDA Physical Layer Specification, Version 2.00.

Chapter 2 – Product Specifications
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 2-1 12/07/06
2 Product Specifications
2.1 Overview
For details about the environmental, reliability and durability specifications, refer to
Section 8.1 of the SDA Physical Layer Specification, Version 2.00.
2.2 Typical Card Power Requirements
Table 2-1 iNAND Power Requirements (Ta=25°[email protected])
VDD (ripple: max, 60mV peak-to-peak) 2.7 V – 3.6 V
Value Measurement Average
Sleep 250 uA Max
Read 100 mA Max
Write 100 mA Max
2.3 System Performance
All performance values for iNAND in Table 2-2 were measured using the following
conditions:
•Voltage range 2.7 V to 3.6 V
•Temperature -25° C to 85° C
•Independent of the iNAND clock frequency
Table 2-2 System Performance
Timing Maximum Value
Block Read Access Time 100 ms
Block Write Access Time 250 ms
CMD1 to Ready after Power-up 1000 ms
2.4 System Reliability and Maintenance
Table 2-3 Reliability and Maintenance Specifications
MTBF >1,000,000 hours
Preventative Maintenance None
Data Reliability <1 non-recoverable error in 1014 bits read

Chapter 2 – Product Specifications
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 2-2 12/07/06
2.5 Physical Specifications
The SanDisk iNAND is a 56-pin, thin fine-pitched ball grid array (BGA). See Figure 2-1
(56-pin) for physical specifications and dimensions. See Figure 2-2 for a top view of the
pin definitions.
Figure 2-1 iNAND Specifications (18 x 12mm Package)
To
p
View Bottom View

Chapter 2 – Product Specifications
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 2-3 12/07/06
Table 2-4 iNAND Package Specifications (18 x 12mm Package)
Dimension in millimeters Dimension in inches
Symbol Minimum Nominal Maximum Minimum Nominal Maximum
A --- --- 1.20 or 1.40 --- --- 0.047
A1 0.30 0.35 0.38 0.012 0.014 0.015
A2 0.69 0.74 0.79 0.027 0.029 0.031
D 17.90 18.00 18.10 0.705 0.709 0.713
E 11.90 12.00 12.10 0.469 0.472 0.476
D1 --- 7.00 --- --- 0.276 ---
D2 --- 11.00 --- --- 0.433 ---
D3 --- 13.00 --- --- 0.512 ---
E1 --- 7.00 --- --- 0.276 ---
e --- 1.00 --- --- 0.039 ---
b 0.45 0.50 0.55 0.018 0.020 0.022
aaa 0.10 0.004
bbb 0.10 0.004
ddd 0.15 0.006
eee 0.25 0.010
fff 0.10 0.004
MD/ME 12/11 12/11
Figure 2-2 iNAND Ball Array (Top View)
DU = Don't use
B7
DU B6 DU B5 VDD B2 DU
B3
VDD
B4
VDD
H6
VDD
G7
VDD G6 DAT2 G5 CSB_DAT3 G2 DAT0
G3
DAT1
G4
CMD
Pin A1 ID
H7
GND H5 DU H4 DU H3 DU H2 GND
A7
GND A6 VDD A5 DU A2 VDD
A3
DU
A4
DU
C7
DU
B8
DU B1 GND
G8
FCAP
F8
DU
E8
DU
D8
DU
C8
DU
F7
DU
E7
DU
D7
DU
F2
DU
G1
CLK
F1
VDD
E2
DU E1 DU
D2
DU D1 GND
C2
DU C1 VDD

Chapter 2 – Product Specifications
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 2-4 12/07/06
2.6 Capacity Specifications
Table 2-5 Model Capacity Summary*
Model No. Capacity
SDINB1-256 256 MB
SDINB1-512 512 MB
SDINB1-1024 1024 MB
SDINB1-2048 2048 MB
SDINB1-4096 4096 MB
* 1 megabyte (MB) = 1 million bytes; 1 gigabyte (GB) = 1 billion bytes. Some of the listed capacity is used for
formatting and other functions, and thus is not available for data storage.

Chapter 3 – iNAND Interface Description
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 3-1 12/07/06
3 iNAND Interface Description
3.1 Pins and Registers
Table 3-1 contains the SanDisk iNAND functional ball assignment
Table 3-1 iNAND Pin Assignment
Pin No. Name Type1Description Comment
SD Bus Mode
H6, F1, C1,
A2, A6 VDD S Supply Voltage
H7, H2, D1,
B1, A7 VSS S Supply Voltage Ground
G2 DAT0 I/O Data Line [Bit 0]
G3 DAT1 I/O Data Line [Bit 1]
G6 DAT2 I/O Data Line [Bit 2]
G5 DAT3 I/O Data Line [Bit 3]
G1 CLK I Clock
G4 CMD I/O Command/Response
B5 WPB I Defines I/F Connect to
VDD
G7 RSTB I Defines I/F Connect to
VDD
B2 RDY/BSY NC
B3 SEL_A I Defines I/F Connect to
VDD
B4 SEL_B I Defines I/F Connect to
VDD
G8 FCAP -- Grounded filter capacitor
SPI Mode
H6, F1, C1,
A2, A6 VDD S Supply Voltage
H7, H2, D1,
B1, A7 VSS S Supply Voltage Ground
G2 DataOut I/O Device to Host Data and Status
G3 DAT1 I/O Unused Pull up to VDD
G6 DAT2 I/O Unused Pull up to VDD
G5 CS I Chip Select (Active low)
G1 CLK I Clock
G4 DataIn I Host to Device Commands and
Data
1Type Key: S=power supply; I=input; O=output using push-pull drivers; PP=I/O using push-pull drivers

Chapter 3 – iNAND Interface Description
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 3-2 12/07/06
Pin No. Name Type1Description Comment
B5 WPB I Write Protect (Active low) Connect to
VDD
G7 RSTB I Reset (Active low) Connect to
VDD
B2 RDY/BSY NC
B3 SEL_A I Defines I/F Connect to
VDD
B4 SEL_B I Defines I/F Connect to
VDD
G8 FCAP -- Grounded filter capacitor
SanDisk iNAND contains a set of information registers. Register descriptions and SDA
references are provided in Section 5.0 of the SDA Physical Layer Specification, Version
2.00.
Table 3-2 iNAND Register Overview
Register Abbreviation Width (in bits) Register Name
CID 128 Card Identification Number
RCA 16 Relative Card Address
CSD 128 Card Specific Data
SCR 64 SD Configuration
OCR 32 Operation Conditions
SSR 512 SD Status
CSR 32 Card status; information about the card status.
3.2 Bus Topologies
SanDisk iNAND products support two communication protocols: SD and SPI. For more
details, refer to Section 3.5 of the SDA Physical Layer Specification, Version 2.00. Section
6 of the specification contains a bus circuitry diagram for reference.
3.2.1 SD Bus
For more details, refer to Section 3.5.1 of the SDA Physical Layer Specification, Version
2.00.
3.2.2 SPI Bus
For more details, refer to Section 3.5.2 of the SDA Physical Layer Specification, Version
2.00.

Chapter 3 – iNAND Interface Description
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 3-3 12/07/06
3.3 Electrical Interface
The power scheme of SanDisk iNAND is handled locally in each card and in the bus
master. Refer to Section 6.4 of the SDA Physical Layer Specification, Version 2.00.
3.3.1 Power Up
Refer to Section 6.4.1 of the SDA Physical Layer Specification, Version 2.00.
3.3.2 Bus Operating Conditions
SPI Mode bus operating conditions are identical to SD Bus Mode operating conditions. For
details, see Section 6.6 of the SDA Physical Layer Specification, Version 2.00.
3.3.3 Bus Timing (Default)
See Section 6.7 of the SDA Physical Layer Specification, Version 2.00.
3.3.4 Bus Timing (High-Speed Mode)
See Section 6.8 of the SDA Physical Layer Specification, Version 2.00.
3.4 iNAND Registers
There is a set of eight registers within the iNAND interface. For specific information about
each register, refer to Section 5 of the SDA Physical Layer Specification, Version 2.00.
3.4.1 Operating Conditions Register
The Operation Conditions Register (OCR) stores the VDD voltage profile for iNAND.
Refer to Section 5.1 of the SDA Physical Layer Specification, Version 2.00.
3.4.2 Card Identification Register
The Card Identification (CID) Register is 16 bytes long and contains the unique card
identification number. It is programmed during manufacturing and cannot be changed by
iNAND hosts. See Table 3-3.

Chapter 3 – iNAND Interface Description
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 3-4 12/07/06
Table 3-3 CID Register Definitions
Name Type Width CID Value Comments
Manufacturer ID
(MID) Binary 8 0x03 Manufacturer IDs are controlled and assigned by the SD-3C, LLC
OEM/Application ID
(OID) ASCII 16 SD ASCII Code 0x53, 0x44 Identifies the card OEM and/or the card contents. The OID is controlled and
assigned by the SD-3C, LLC
ST04G
ST02G
ST01G
ST512
Product Name
(PNM) ASCII 40
ST256
Five ASCII characters long
Product Revision
(PRV) BCD 8 Product Revision xx See Section 5.2 in the SDA Physical Layer Specification, Version 2.00
Serial Number
(PSN) Binary 32 Product Serial Number 32-bit unsigned integer
Reserved --- 4 --- ---
Manufacture Date
Code (MDT) BCD 12 Manufacture date (for ex.
April 2001=
0x014)
Manufacturing date—yym (offset from
2000)
CRC7 checksum
(
CRC
)
Binary 7 CRC7* Calculated
Not used, always --- 1 --- ---
Note: SD-3C, LLC is a limited liability company established by Matsushita Electric Industrial Co. Ltd.,
SanDisk Corporation and Toshiba Corporation.
*The CRC checksum is computed by using the following formula: CRC Calculation: G(x)
= x7+x3+1
M(x)=(MID-MSB)*x119+…+(CIN-LSB)*x0
CRC[6…0]=Remainder[(M(x)*x7)/G(x)]

Chapter 3 – iNAND Interface Description
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 3-5 12/07/06
3.4.3 Card Specific Data Register
The Card Specific Data (CSD) Register configuration information is required to access
iNAND data. The CSD defines the data format, error correction type, maximum data
access time, etc. The field structures of the CSD Register vary depending on the physical
specifications and card capacity. The CSD_STRUCTURE field in the CSD Register
indicates which structure version is used. Table 3-4 shows the version number as it relates
to the CSD structure. Refer to Section 5.3.1 of the SDA Physical Layer Specification,
Version 2.00 for more information.
Table 3-4 CSD Register Structures
CSD_STRUCTURE CSD Structure Version Valid for SD Memory Card Physical
Specification Version / Card Capacity
Version 1.01 to 1.100 CSD Version 1.0
Version 2.00 / Standard Capacity
1 CSD Version 2.0 Version 2.00 / High Capacity
2-3 Reserved ---
Table 3-5 provides an overview of the CSD Register. More field-specific information can
be found in Section 5.3.2, Table 5-4 of the SDA Physical Layer Specification, Version 2.00.
Table 3-5 CSD Register (CSD Version 1.0)
Field CSD Value Description
CSD_ STRUCTURE 1.0 CSD structure
--- --- Reserved
TAAC
1.5 msec Data read access time-1
NSAC 0 Data read access time-2 in CLK cycles
(NSAC*100)
Default 25MHzTRANS_ SPEED
High-speed 50MHz
Max. data transfer rate
CCC All (inc. WP,
lock/unlock) Card command classes
READ_BL_ LEN 2G
Up to 1G Max. read data block length
READ_BL_ PARTIAL Yes Partial blocks for read allowed
WRITE_BLK_ MISALIGN No Write block misalignment
READ_BLK_ MISALIGN No Read block misalignment
DSR_IMP No DSR implemented
--- --- Reserved
C_SIZE 2 GB
1 GB
512 MB
256 MB
Device size
VDD_R_ CURR_MIN 100 mA Max. read current @VDD min.
VDD_R_ CURR_MAX 80 mA Max. read current @VDD max.

Chapter 3 – iNAND Interface Description
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 3-6 12/07/06
Field CSD Value Description
VDD_W_ CURR_MIN 100 mA Max. write current @VDD min.
VDD_W_ CURR_MAX 80 mA Max. write current @VDD max.
C_SIZE_ MULT 2G=2048
1G=1024
512=512
256=256
Device size multiplier
ERASE_BLK_EN Yes Erase single block enable
SECTOR_ SIZE 32 blocks Erase sector size
WP_GRP_ SIZE 128 sectors Write protect group size
WP_GRP_ ENABLE Yes Write protect group enable
Reserved --- Reserved for MMC compatibility
R2W_ FACTOR x16 Write speed factor
WRITE_BL_ LEN 2G
Up to 1G Max. write data block length
WRITE_BL PARTIAL No Partial blocks for write allowed
--- --- Reserved
FILE_ FORMAT_ GRP 0 File format group
COPY Has been copied Copy flag (OTP)
PERM_ WRITE_
PROTECT Not protected Permanent write protection
TMP_WRITE_PROTECT Not protected Temporary write protection
FILE_ FORMAT HD w/partition File format
Reserved --- Reserved
CRC CRC7 CRC
--- --- Not used, always “1”

Chapter 3 – iNAND Interface Description
Revision 3.1 SanDisk iNAND Product Manual
© 2006 SanDisk Corporation 3-7 12/07/06
Refer to Section 5.3.3, Table 5-16 of the SDA Physical Layer Specification, Version 2.00
for more detailed information.
Table 3-6 CSD Register (CSD Version 2.0)
Field CSD Value Description
CSD_ STRUCTURE 2.0 CSD structure
--- --- Reserved
TAAC
1.5 ms Data read access time-1
NSAC 0 Data read access time-2 in CLK cycles
(NSAC*100)
Default 25MHzTRANS_ SPEED
High-speed 50MHz
Max. data transfer rate
CCC 010110110101b All
(inc. WP,
lock/unlock)
Card command classes
READ_BL_ LEN --- Max. read data block length
READ_BL_ PARTIAL Yes Partial blocks for read allowed
WRITE_BLK_ MISALIGN No Write block misalignment
READ_BLK_ MISALIGN No Read block misalignment
DSR_IMP No DSR implemented
--- 0 Reserved
32 GB
16 GB
8 GB
C_SIZE
4 GB
Device size
--- 0 Reserved
ERASE_BLK_EN 1 Erase single block enable
SECTOR_ SIZE 32 blocks Erase sector size
WP_GRP_ SIZE 128 sectors Write protect group size
WP_GRP_ ENABLE Yes Write protect group enable
Reserved --- Reserved for MMC compatibility
R2W_ FACTOR x16 Write speed factor
WRITE_BL_ LEN --- Max. write data block length
WRITE_BL PARTIAL No Partial blocks for write allowed
--- --- Reserved
FILE_ FORMAT_ GRP 0 File format group
COPY Has been copied Copy flag (OTP)
PERM_ WRITE_
PROTECT Not protected Permanent write protection