Sharp NA-V128H5 User manual

340 kW, German factory rooftop
Sharp: The first name in solar power.
The last word in solar innovation.
Oering one of the most ecient thin film
photovoltaic products ever manufactured,
Sharp becomes the provider of choice for
multi-megawatt-scale power production.
ENGINEERING EXCELLENCE
Tandem-junction structure (amorphous silicon/
microcrystalline silicon) captures a wider part of the
solar spectrum, converting more sunlight into electricity.
HIGH VOLTAGE ADVANTAGE
Proprietary design increases reliability by minimizing
losses caused by module output variation.
RELIABILITY
Microcrystalline layer provides superior long-term
stability and higher module eciency.
DURABLE
Four bypass diodes ensure maximum output under
non-uniform operating conditions.
INNOVATIVE
Single-layer glass with polymeric backskin lowers
pounds per watt and transportation costs. Modules are
sized to optimize the greatest amount of power, easily
handled by one person.
BECOmE pOwERf U L
LEADING THE fUTURE Of sOLAR
Since 1959, Sharp has led the solar electric industry
with ecient, aordable systems and powers
more homes and businesses than any other solar
manufacturer in the world. From research and
development, to system design, delivery, deployment
and a more diverse product portfolio, Sharp is ready
to partner with you to create customized solar
solutions, with an unyielding commitment to quality
control and customer service.
128/121/115 WATT
THIN FILM MODULE
Amorphous Silicon/Microcrystalline Silicon
IEC-Certified for 1,000-volt systems
For Behind-the-Fence Applications
THIN FILM PHOTOVOLTAICS:
THE NEXT EVOLUTION
OF SOLAR TECHNOLOGY
Sharp’s thin film product pairs amorphous silicon
with a layer of microcrystalline silicon to achieve high
stability and performance. Produced with less than
one percent of the silicon used in crystalline solar
cells, thin film products oer high performance with
less semiconductor material. With a low temperature
coecient for output power, thin film generates
greater energy than its crystalline silicon counterpart
in geographic regions where temperatures are high.
In warm climates, this translates into more kilowatt-
hours per kilowatt. Certified to IEC 61646, these
modules are not UL-listed and are exclusively for
behind-the-fence applications.
NA-V128H5 | NA-V121H5 | NA-V115H5
1,000-VOLT SYSTEMS

EXTERIOR DImENsIONs
AE
F
D
B
C
E
D
BACK VIEW SIDE VIEW
A
39.7”/1009 mm
B
55.5”/1409 mm
C
1.8”/46 mm
D
3.9”/100 mm
E
1.2”/30.5 mm
F
35.4”/900 mm
SHARP ELECTRONICS CORPORATION
5901 Bolsa Avenue, Huntington Beach, CA 92647
1-800-SOLAR-06 • Email: [e-mail]
www.sharpusa.com/solar
09F-038 • PC-05-09
© 2009 Sharp Electronics Corporation. All rights reserved.
128/121/115 WATT
NA-V128H5 | NA-V121H5 | NA-V115H5
Amorphous Silicon/Microcrystalline Silicon
IEC-Certified for 1,000-volt systems (IEC 61646)
Design and specifications are subject to change without notice.
Sharp is a registered trademark of Sharp Corporation. All other trademarks are property
of their respective owners. Contact Sharp to obtain the latest product manuals before using
any Sharp device.
spECIfICATIONs (I)
Cell Tandem architecture of amorphous and microcrystalline silicon
Cell Circuit 45 cells in series by 6 in parallel per quadrant: 4 quadrants
in series
Dimensions 39.7” x 55.5” x 1.8” (1009 x 1409 x 46 mm)
Weight 42 lbs
Connection type Cable with MC-3 connector
Bypass diodes 4 (one per quadrant)
Fire Rating Class C
spECIfICATIONs (II)
Maximum system voltage 1,000 VDC
Maximum mechanical load 2,400 Pa
Series Fuse Rating 2 A
Operating temperature (cell) - 40 to +90 °C
Storage temperature - 40 to +90 °C
Storage air humidity Up to 90 %
Installation orientation Portrait
ELECTRICAL DATA
Maximum power Pmax
Open-circuit voltage Voc
Short-circuit current Isc
Voltage at maximum power Vpmax
Current at maximum power Ipmax
Module eciency η
Temperature coecient – open circuit voltage β
Temperature coecient – short circuit current α
Temperature coecient – power γ
MADE IN JAPAN
The electrical data applies under standard test conditions (STC): Irradiance of 1,000 W/m2with an AM 1.5 spectrum at a cell temperature of 25ºC.
The power output is subject to a manufacturing tolerance of + 10% / - 5%
Output values are post initial Stabler-Wronski decay; actual measured initial values will be greater (approximately 15% for power).
NAmEpLATE VALUEs
NA-V128H5 NA-V121H5 NA-V115H5
128 121 115
238 238 238
0.846 0.830 0.810
186 V 180 V 174 V
0.688 A 0.673 A 0.661 A
9.0% 8.5% 8.1%
-0.3%/°C
+0.07%/°C
-0.24%/°C