Infineon EVAL-M1-2ED2106S User manual

Revision 1.0
User Manual
www.infineon.com/gatedriver page 1 of 29 2019-09-18
AN2019
-
19 EVAL
-
M1
-
2ED2106S User Manual
EVAL-M1-2ED2106S User Manual
2ED2106S06F Evaluation board for BLDC motor drives
About this document
Scope and purpose
This application note provides an overview of the evaluation board EVAL-M1-2ED2106S concerning its main
features, hardware description, thermal performance and typical waveforms, etc.
The EVAL-M1-2ED2106S board is a power drive board including driver ICs, IGBTs, a power connector and signal
interface. The board is intended to drive a brushless direct current (BLDC) motor by connecting to an external
controller board such as EVAL-M1-101T.
The board aims to boost Infineon’s newly promoted 650 V high and low side gate driver 2ED2106S06F using
the silicon-on-isolator (SOI) technology.
Intended audience
This application note is intended for all technical specialists likely to evaluate the 650 V SOI gate drivers for
general applications.
Table of contents
About this document....................................................................................................................... 1
Table of contents............................................................................................................................ 1
1 Safety precautions ................................................................................................................. 2
2 Introduction .......................................................................................................................... 3
3 Main features of EVAL-M1-2ED2106S ........................................................................................ 4
3.1 Board specifications of EVAL-M1-2ED2106S...........................................................................................4
3.2 Pin assignment ........................................................................................................................................6
4 Key components in the EVAL-M1-2ED2106S............................................................................... 8
4.1 650 V SOI gate driver ...............................................................................................................................8
4.2 TrenchStopTM IGBT6 IKB10N65ET6 .........................................................................................................9
5 Test result of the EVAL-M1-2ED2106S driving BLDC motor .........................................................10
5.1 System setup .........................................................................................................................................10
5.2 Waveforms.............................................................................................................................................11
6 Thermal analysis of the EVAL-M1-2ED2106S .............................................................................13
7 Circuit diagram of the EVAL-M1-2ED2106S ...............................................................................14
7.1 Schematic overview .............................................................................................................................. 14
7.2 Main power circuit.................................................................................................................................15
7.3 OCP circuit .............................................................................................................................................15
7.4 Auxiliary power supply circuit...............................................................................................................18
8 PCB layout of the EVAL-M1-2ED2106S ......................................................................................19
9 Bill of material ......................................................................................................................24
10 Reference.............................................................................................................................27
Revision history.............................................................................................................................28

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Safety precautions
1 Safety precautions
Please read carefully the following statements in Table 1 regarding hazards associated with the evaluation
board and the testing system, and the safety precautions listed in the manual.
Table 1 Safety precautions
Caution: The ground potential of the EVAL-M1-2ED2106S board is biased to a negative
DC bus voltage potential. When measuring voltage waveform by oscilloscope, the
ground of the device needs to be isolated. Failure to do so may result in personal injury
or death, and equipment damage.
Caution: Only personnel familiar with the drive and associated machinery should plan
or implement the installation, start-up and subsequent maintenance of the system.
Failure to comply may result in personal injury and/or equipment damage.
Caution: The surfaces of the drive may become hot, which may cause injury.
Caution: The EVAL-M1-2ED2106S board contains parts and assemblies sensitive to
electrostatic discharge (ESD). Electrostatic control precautions are required when
installing, testing, servicing or repairing this assembly. Component damage may result
if ESD control procedures are not followed. If you are not familiar with electrostatic
control procedures, refer to applicable ESD protection handbooks and guidelines.
Caution: An incorrectly applied or installed drive can result in component damage or
reduction in product lifetime. Wiring or application errors such as undersized motor,
incorrect or inadequate DC supply, or excessive ambient temperatures may result in
system malfunction.
Caution: Remove or connect the control board from, or to, the power drive. Wait three
minutes after removing power from the power drive to discharge the bus capacitors. Do
not attempt to service the drive until the bus capacitors have discharged to zero. Failure
to do so may result in personal injury or death.

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Introduction
2 Introduction
Note: Evaluation boards are not subject to the same procedures as regular products regarding Returned
Material Analysis (RMA), Process Change Notification (PCN) and Product Discontinuation (PD).
Evaluation boards are intended to be used under laboratory conditions and by trained specialists
only.
The power stage of the evaluation board EVAL-M1-2ED2106S consists of a three-phase inverter with a single-
shunt configuration, which is widely used for the BLDC motor drive in home appliances.
The 650 V SOI gate driver 2ED2106S06F is highlighted in the board. Different from traditional drivers with
junction isolated (JI) technology, the SOI gate driver shows the benefits of a simpler design by integrating the
boot strap diode, and there is higher tolerance of the negative VSdue to the SOI technology inherently.
The IGBTs with Infineon TrenchStopTM IGBT6 technology have been adopted in the board. Thanks to the high
performance of the IGBT6 with the optimized conduction loss and switching loss, under natural cooling the
board can run up to 300 W, which is common for refrigerator products.
The board is intended to work together with the controller board EVAL-M1-101T to deliver a total Infineon
solution with low cost and high robustness for the home appliance applications.
The board is available via regular Infineon distribution partners as well as on Infineon's website. The features of
this board are described in Chapter 3 of this document. The remaining sections provide information to enable
customers to copy, modify and qualify the design for production according to their own specific requirements.
Environmental conditions were considered in the design of the EVAL-M1-2ED2106S. However, the board has
not been qualified in terms of safety requirements, manufacturing and operation over the entire operating
temperature range or lifetime. The boards provided by Infineon are subject to functional testing only.
Figure 1 depicts the block diagram of the EVAL-M1-2ED2106S.
SOI
Gate
Driver
SOI
Gate
Driver
SOI
Gate
Driver
M
M1 Interface
AUX
Power
Supply
PWM
VCC
Current
Sensing
Cbus
EVAL-M1-2ED2106S
Figure 1 Block diagram of the EVAL-M1-2ED2106S

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Main features of EVAL-M1-2ED2106S
3 Main features of EVAL-M1-2ED2106S
The main features of the evaluation board EVAL-M1-2ED2106S include:
•Three-phase inverter with single-shunt configuration, suitable for home appliance applications
•DC voltage input that can come directly from the rectified DC voltage of single-phase 230 VAC input
•650 V SOI gate driver 2ED2106S06F with large negative VStolerance
•10 A/650 V rated IGBT6 IKB10N65ET6 with a better thermal performance
•The board can run a BLDC motor by connecting to an external control board EVAL-M1-101T
•Auxiliary power supply is included in the board
•Natural cooling with a heatsink is installed on bottom side
3.1 Board specifications of EVAL-M1-2ED2106S
The detailed specifications of the EVAL-M1-2ED2106S are described in Table 2.
Table 2 EVAL-M1-2ED2106S board specifications
Parameters Typical maximum Conditions / comments
Input
Voltage (VDC) 310 380 DC+ to GND
Current ( ARMS) 0.97 310 VDC input, 300 W input power
Output
Phase current ( ARMS) 1.6 310 VDC input, 300 W input power
Switching frequency
Inverter frequency (kHz) 15
Current feedback
Current sampling shunt 100 mΩ single-shunt configuration
A
ux power supply
Supply voltage ( VCC) 15 on-board aux power supply
System environment
Ambient temperature 0~50
℃
natural ventilation, maximum RH of 95 %
PCB characteristics
Dimensions Length*Width=126x84 mm2, 2 layers, PCB thickness=1.6 mm,
copper thickness=1 oZ
Material FR-4, RoHS-compliant

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Main features of EVAL-M1-2ED2106S
The top and bottom view of the EVAL-M1-2ED2106S are shown in Figure 2 and Figure 3, respectively.
Figure 2 Top view of the EVAL-M1-2ED2106S
1
.
Power connector
–
DC input
and phase-out
2. DC bus capacitor
3. Leg shunt resistor
4. 3-phase inverter with IGBTs
5. Driver ICs
6. M1 controller interface
7. Auxiliary power supply
1
2
3
4
5
6
7

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Main features of EVAL-M1-2ED2106S
Figure 3 Bottom view of the EVAL-M1-2ED2106S
3.2 Pin assignment
The pin assignment of the phase-out connector and DC input connector are listed in Table 3 and Table 4,
respectively. The pin names are also marked on the PCB.
Table 3 J2 – Phase-out connector
S. No. Pin name Details
U U – Phase-out wiring terminal
V V – Phase-out wiring terminal
W W – Phase-out wiring terminal
8
. Heatsink installed on the back
side
9. OCP circuit
8
9

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Main features of EVAL-M1-2ED2106S
Table 4 J3 – DC input connector
S. No. Pin name Details
DC+ DC bus positive input
GND DC bus return
The controller interface is M1 that pin-to-pin matches with the EVAL-M1-101T. The pin assignment is listed in
Table 5.
Table 5 CN2 – Controller interface
S. No. Pin name Details
1 UH U-phase high side PWM input
2 GND signal reference ground
3 UL U-phase low side PWM input
4 GND signal reference ground
5 VH V-phase high side PWM input
6 +3.3 V +3.3 V power supply
7 VL V-phase low side PWM input
8 +3.3 V +3.3 V power supply
9 WH W-phase high side PWM input
10 I_U+ positive of the single-shunt current sensing
11 WL W-phase low side PWM input
12 I_U- negative of the single-shunt current sensing
13 GK Gate kill signal output
14 DCB DC bus voltage sensing output
15 NC
Not connected
16 NC
17 NC
18 NC
19 NC
20 VCC VCC (+15 V) to the controller board

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Key components in the EVAL-M1-2ED2106S
4 Key components in the EVAL-M1-2ED2106S
4.1 650 V SOI gate driver
The 2ED2106S06F is a newly developed high and low-side gate driver using SOI technology, which has many
advantages compared with the commonly used JI parts:
• 650 V offset voltage and +290/-700 mA drive current are suited for general motor driving applications with
universal AC input voltage
• Unique Infineon thin-film, SOI technology
• Integrated ultra-fast, low-resistance bootstrap diode
• Logic is operational up to -11 V on VS pin
• Tolerant to negative transient voltage up to -100 V provided by SOI technology
• Negative voltage tolerance on inputs of -5 V
• dV/dt immune ±50 V
• Maximum supply voltage of 25 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, 15 V input logic-compatible
• Pin-pin replacement of the JI parts IR2106S/IRS2106S
• -40~125 ℃operating range
• RoHS-compliant
The features of 2ED2106S06F and the pin-pin replaced JI parts – IR2106S/IRS2106S are compared in Table 6.
Table 6 Features’ comparison of the 2ED2106S06F, IR2106S and IRS2106S
Part 2ED2106S06F IR2106S IRS2106S
Input logic HIN, LIN
HIN
, LIN
HIN
, LIN
Max. VB(V) 675
6
25
6
25
Min. VIN (V) -5
-
0.3
-
0.3
VCC UVLO (V), typical 9.1/8.2 8.9/8.2 8.9/8.2
VBS UVLO (V), typical 8.2/7.2 8.9/8.2 8.9/8.2
tON/tOFF (nS), typical 200/200 220/200 220/200
Min. VS(V) for logic operation -11 -5 -5
Min. VS(V) for transient operation -100 V NA NA
Dead time (nS) No
Max. delay matching time MT (nS) 35 30 30
IO+/IO- (mA) 290/700 200/350 290/600
Integrated boot diode Yes No No

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Key components in the EVAL-M1-2ED2106S
4.2 TrenchStopTM IGBT6 IKB10N65ET6
• N-channel
• VCE=650 V, IC=16 A @ 100 ℃
• D2PAK package
• Low VCE(sat) = 1.5 V @ 8.5 A
• Optimized the gate charge QGfor smaller switching loss
• 3 uS short-circuit capabiity
• Max 175 ℃junction temperature
• RoHS-compliant and halogen-free

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Test result of the EVAL-M1-2ED2106S driving BLDC motor
5 Test result of the EVAL-M1-2ED2106S driving BLDC motor
5.1 System setup
The board can run a BLDC motor by connecting to an external controller board. The system setup is shown in
Figure 4. The following notes should be taken into consideration:
• The input voltage should be from a DC source or rectified DC voltage from a 230 VAC source. In the test
herein, a 310 VDC / 1.5 A DC source is used.
Note: there should be a protection circuit containing the NTC and fuse to limit the inrush current during the
power ON.
• A high voltage BLDC motor could run with up to 300 W load. A GK6040-6AC31-WE motor is used here for
test purposes only.
• The VB, HO and VS should be measured by high-voltage, isolated differential probes, whereas the HIN, LIN,
VCC and LO should be measured by low-voltage differential probes.
Figure 4 Test setup for running a BLDC motor
BLDC windings
DC input
Match with the
EVAL
-
M1
-
101T

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Test result of the EVAL-M1-2ED2106S driving BLDC motor
5.2 Waveforms
Before running the motor, please double check:
• Correct wiring before powering on the DC+ and GND
• The correct selection and scaling of probes
• The LED named ‘BUS OK’ lights up to indicate a successful DC bus power-up
• The LED named ‘VCC OK’ lights up to indicate a successful +15 V auxiliary power supply
When running the system at 310 VDC input voltage and up to 300 W input power, the typical waveforms are
depicted in Figure 5 and Figure 6.
Figure 5 Test result – PWM input and gate drive output
CH1
–
U phase
-
out current
CH2 – Low side IGBT VGE
CH3 – High side IGBT VGE
CH4 – High side PWM input

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Test result of the EVAL-M1-2ED2106S driving BLDC motor
From Figure 6, the minimum VS-COM probed at the driver IC pin is -14 V during normal operation. Owing to the
much larger tolerance of the transient negative VS(-100 V), the SOI gate driver 2ED2106S06F can work under
less favorable conditions.
Figure 6 Test result - negative VS
CH1
–
U phase
-
out current
CH2 – Low side IGBT VGE
CH3 – High side IGBT VGE
CH4
–
VS
-
COM

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Thermal analysis of the EVAL-M1-2ED2106S
6 Thermal analysis of the EVAL-M1-2ED2106S
The thermal performance is evaluated at 310 VDC input voltage and 300 W input power with 15 kHz switching
frequency at 26.2 ℃ambient temperature. The thermal data are recorded in Figure 7.
The key component temperatures are all in the normal range:
• IGBT: The maximum case temperature is 86 ℃. The junction temperature is less than 100 ℃calculated by
the Infineon IPOSIM online simulation tool.
• Shunt resistor: The shunt resistor is rated 3 W @ 70 ℃in the operating temperature range of -55~155 ℃.
The maximum shunt temperature is 63.8 ℃with a large margin.
• Gate driver IC: The maximum junction temperature of the 2ED2106S06F is 150 ℃. The case temperature is
50.1 ℃. The gate driver IC power loss consists of two major parts, the internal level-shift switching loss and
the driving loss. For driving the IKB10N65ET6 under 15 kHz switching frequency, the calculated total power
loss of the gate driver is around 0.06 W, thus the junction temperature is estimated at 50.1 ℃+ 0.06 W *
60 ℃/W = 53.7 ℃.
Figure 7 Thermal breakdown at 300 W input power

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Circuit diagram of the EVAL-M1-2ED2106S
7 Circuit diagram of the EVAL-M1-2ED2106S
7.1 Schematic overview
The schematic overview is depicted in Figure 8.
Figure 8 Schematic overview of the EVAL-M1-2ED2106S

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Circuit diagram of the EVAL-M1-2ED2106S
7.2 Main power circuit
The gate drivers and IGBTs is designed as Figure 9. Each PWM signal to the gate driver’s input involves a resistor
in series to suppress the noise induced from the ground bouncing while the IGBT switching. The ON and OFF
gate resistors are separated for an optimized tradeoff between the IGBT switching loss and system EMI
performance.
The DC bus status is sampled by a resistor divider.
Figure 9 Main power circuit
7.3 OCP circuit
The overcurrent protection (OCP) function is necessary for motor drive applications. As configured in Figure 10,
the output of the comparator LM393A shall flip-flop low when the single-shunt current is over 5.45 A. The
generated gate kill (GK) signal is sent to the controller IC disabling all the gate driver PWM inputs to turn off the
IGBTs.
Figure 10 OCP circuit

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Circuit diagram of the EVAL-M1-2ED2106S
The typical OCP waveform is captured in Figure 11. The gate drive signals are terminated immediately after the
overcurrent event occurs.
Figure 11 Test result - OCP
The IGBT6 short-circuit capability is only 3 uS. Therefore in case of a short circuit, the IGBTs must be shut down
within the withstand time limitation. The total short-circuit protection (SCP) delay time is the sum of the
cascaded time interals as below:
• Current sampling input filter time, which is set up by R55 and C29 with a time constant of 1 uS.
• Comparator response time from the input step to the output GK flip-flop. Typical is 300 nS in this design.
• MCU delay time from receiving the GK signal to disable the PWMs. Typical is 1.3 uS of the controller
IMC101T (tGK, defined in data sheet).
• Gate driver’s turn-off propogation delay time (tOFF). Maximum is 300 nS of the 2ED2106S06F.
• The IGBT turn-off time, including the turn-off delay time td(off) and fall time tf, which is related to the turn-off
gate resistor Rgoff and the gate charge QG of the IGBT. It is less than 200 nS on this board.
CH1
–
Shunt resistor voltage drop
CH2 – Low side IGBT VGE
CH3 – High side IGBT VGE
CH4 – GK signal

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Circuit diagram of the EVAL-M1-2ED2106S
The worst-case test of the short circuit was done by linking the high-side IGBT collector and emitter in advance
of the system run. The short circuit would be triggered once the low-side IGBT turns on. In the bench test, the
total SCP delay time of the board was around 2.5 uS (see Figure 12), which meets the IGBT short-circuit
capability.
Figure 12 Test result - SCP
CH1
–
Shunt resistor voltage drop
CH2 – Low side IGBT VGE
CH3 – High side IGBT VGE
CH4 – GK signal

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Circuit diagram of the EVAL-M1-2ED2106S
7.4 Auxiliary power supply circuit
As Figure 13 shows, the gate drivers’ supply +15 V is generated from a flyback circuit with the CoolSETTM power
controller ICE5GR4780AG. The +3.3 V for the external control board is regulated by the Infineon LDO IFX1117-ME
from another winding of the transformer.
Although the auxiliary power supply adopts a flyback transformer and an opto-coupler, the primary and
secondary side on this board are not isolated.
Figure 13 Auxiliary power supply circuit

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PCB layout of the EVAL-M1-2ED2106S
8 PCB layout of the EVAL-M1-2ED2106S
The layout details of the EVAL-M1-2ED2106S can be seen in Figure 14, Figure 15, Figure 16 and Figure 17,
respectively.
Some layout tips are indicated on this board:
• The power conductor paths such as DC+, GND, phase-out, etc. should be as thick as possible for a lower
temperature rise and lower parasitic inductances.
• The shunt resistor is SMD-preferred with the lowest parasitic inductance for a smaller negative VSduring
switching.
• The shunt resistor should be located where the LO-COM drive loop is as small as possible.
• The link conductor path of the high-side IGBT-E and low-side IGBT-C should be as thick and short as
possible for a smaller parasitic inductance.
• The power ground and controller ground should be individually copper-filled (in the production process)
and then shorted at the return of the shunt resistor. In this way the LO-COM drive loop parasitic inductance
and the HIN/LIN-COM input signal loop parasitic inductance are both as small as possible (see Figure 15
and Figure 17).
• The VCC and VBS bypass capacitors should be close to the IC.
• Current sensing should be connected directly at the shunt-resistor terminals and sent to the controller
interface as a differential pair.

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PCB layout of the EVAL-M1-2ED2106S
Figure 14 Top assembly drawing