Panasonic MA2J7280G User manual

Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00171AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J7280G
Silicon epitaxial planar type
For super high speed switching
For wave detection
■Features
•Low forward voltage VFand good wave detection efficiency η
•Small reverse current IR
•Small temperature coefficient of forward characteristic
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current IF30 mA
Peak forward current IFM 150 mA
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF=1 mA 0.4 V
VF2 IF=30 mA 1.0
Reverse current IRVR=30 V 300 nA
Terminal capacitance CtVR=1 V, f =1 MHz 1.5 pF
Reverse recovery time *trr IF=IR=10 mA 1.0 ns
Irr =1 mA, RL=100 Ω
Detection efficiency ηVIN =3 V(peak) , f =30 MHz 65 %
RL=3.9 kΩ, CL=10 pF
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 100 mA
IR= 100 mA
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: trr measurement circuit
■Package
•Code
SMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 2A

2
MA2J7280G
SKH00171AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVR
10
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage VF(V)
Forward current IF(mA)
T
a = 125°C−20°C
75°C 25°C
10
−2
0 5 10 15 20 25 30
10
−1
1
10
10
2
10
3
Reverse voltage VR(V)
Reverse current IR(µA)
T
a = 125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 30 mA
10 mA
1 mA
10
−2
−40 0 40 80 120 160 200
10
−1
1
10
10
2
10
3
Ambient temperature T
a
(°C)
Reverse current I
R
(µA)
V
R = 30 V
10 V
1 V
0
3.0
2.5
2.0
1.5
1.0
0.5
0 5 10 15 20 25 30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
T
a = 25°C
IF(AV) Ta
0
10
20
40
30
50
0
DC
40 16012080
Tj=125°C
Ambient temperature Ta(°C)
Forward current (Average) IF(AV) (mA)
tp
T
IF

MA2J7280G
3
SKH00171AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini2-F3 Unit: mm
1.25 ±0.10
0.13
+0.05
−0.02
0.50 ±0.05
2
1
0.35 ±0.05
0.7
±0.1
5°
(0.15)
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.05
5°

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