Panasonic MA27111 User manual

Switching Diodes
1
Publication date: November 2003 SKF00066BED
MA27111
Silicon epitaxial planar type
For high-speed switching circuits
■Features
•High-density mounting is possible
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF100 mA
Peak forward current IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=100 mA 0.95 1.20 V
Reverse voltage VRIR=100 µA80
Reverse current IRVR=75 V 100 nA
Terminal capacitance CtVR=0 V, f =1 MHz 0.6 2.0 pF
Reverse recovery time *trr IF=10 mA, VR=6 V 3 ns
Irr =0.1 IR, RL=100 Ω
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF=10 mA
VR=6 V
RL=100 Ω
10%
Input Pulse Output Pulse
Irr =0.1 IR
trtp
trr
VR
IF
t
t
A
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: trr measurement circuit
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: S
5°
5°
0.27
2
1
1.40±0.05
0.52±0.03
1.00±0.05
0.60±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02 0.13+0.05
–0.02
Note) *: t =1 s
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA27111
SKF00066BED
10
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage VF(V)
Forward current IF(mA)
T
a = 150°C
100°C
25°C
−20°C
10
−1
1
10
10
2
10
3
10110
−1
Pulse width t
W
(ms)
Forward surge current I
F(surge)
(A)
t
W
Non repetitive
I
F(surge)
T
a = 25°C
1
0 20 40 60 80 100 120
10
102
103
104
105
Reverse voltage VR(V)
Reverse current IR(nA)
Ta=150°C
100°C
25°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F =100 mA
10 mA
3 mA
1
−40 0 40 80 120 160 200
10
10
2
10
3
10
4
10
5
Ambient temperature T
a
(°C)
Reverse current I
R
(nA)
V
R = 75 V
35 V
6 V
0
1.2
1.0
0.8
0.6
0.4
0.2
0 20 40 60 80 100 120
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
T
a = 25°C
IRTaCtVRIF(surge) tW
IFVFIRVRVFTa
This product complies with the RoHS Directive (EU 2002/95/EC).

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