Panasonic MA3J1470G User manual

Switching Diodes
1
Publication date: November 2007 SKF00096AED
MA3J1470G
Silicon epitaxial planar type
For high-speed switching circuits
■Features
•Two isolated elements contained in one package, allowing high-
density mounting
•Two diodes are connected in series in the package
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=100 mA 1.2 V
Reverse voltage VRIR=100 µA80V
Reverse current IRVR=75 V 100 nA
Terminal capacitance CtVR=0 V, f =1 MHz 2 pF
Reverse recovery time *trr IF=10 mA, VR=6 V 3 ns
Irr =0.1 IR , RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 10 mA
VR= 6 V
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Note) *:t=1 s
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Series 65
Peak forward Single IFM 225 mA
current Series 145
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Series 325
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Package
•Code
SMini3-F2
•Pin Name
1: Anode1
2: Cathode2
3: Cathode1, Anode2
■Marking Symbol: MS
■Internal Connection
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA3J1470G
SKF00096AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW
10 −2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a = 150°C
100°C
25°C
−20°C
1
0 20 40 60 80 100 120
10
10
2
10
3
10
4
10
5
Reverse voltage V
R
(V)
Reverse current I
R
(nA)
25°C
100°C
T
a = 150°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 100 mA
10 mA
3 mA
1
−40 0 40 80 120 160 200
10
10
2
10
3
10
4
10
5
Ambient temperature T
a
(°C)
Reverse current I
R
(nA)
V
R = 75 V 35 V
6 V
0
1.2
1.0
0.8
0.6
0.4
0.2
0 20406080100120
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
T
a = 25°C
10 −1
1
10
102
103
10110 −1
Pulse width tW(ms)
Forward surge current IF(surge) (A)
t
W
Non repetitive
I
F(surge)
Ta= 25°C

MA3J1470G
3
SKF00096AED
This product complies with the RoHS Directive (EU 2002/95/EC).
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12
SMini3-F2 Unit: mm

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