Panasonic MA3SD29FG User manual

Schottky Barrier Diodes (SBD)
Publication date: October 2007 SKH00211AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SD29FG
Silicon epitaxial planar type
For super high speed switching circuits
Features
Low forward voltage VF: <0.42 V (at IF= 100 mA)
Optimum for high-frequency rectification
Short reverse recovery time trr
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current (Average) Single IF(AV)
100 mA
Series 75
Peak forward current Single IFM
200 mA
Series 150
Non-repetitive peak forward surge current
*IFSM 1 A
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF= 10 mA 0.25 0.29 V
VF2 IF= 100 mA 0.39 0.42
Reverse current IR1 VR= 10 V 25
mA
IR2 VR= 30 V 120
Terminal capacitance CtVR= 0 V, f = 1 MHz 11 pF
Reverse recovery time *trr
IF= IR= 100 mA, Irr = 10 mA,
RL= 100 W1 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
3. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= IR= 100 mA
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Package
Code
SSMini3-F3
Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Internal Connection
1
3
2
Marking Symbol: M5R

MA3SD29FG
2SKH00211AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRCtVR
IF(AV) Ta
0 0.2 0.4 0.6
103
102
10
1
10−1
10−2
10−3
MA3SD29F_ IF-VF
Forward current IF(mA)
Forward voltage VF(V)
Ta= 125°C
75°C25°C
−25°C
010 20 30
105
104
103
102
10
1
MA3SD29F_ IR-VR
Reverse current IR(µA)
Reverse voltage VR(V)
Ta= 125°C
75°C
25°C
010 20 30
35
30
25
20
10
15
5
0
MA3SD29F_ Ct-VR
Terminal capacitance Ct(pF)
Reverse voltage VR(V)
0
20
40
60
120
100
80
140
0
DC
40 160120 80
Tj= 125°C
Ambient temperature Ta(°C)
Forward current (Average) IF(AV) (mA)
tp
T
IF

MA3SD29FG
SKH00211AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05 −0.03
0.26 +0.05 −0.02
1 2
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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Electric Industrial Co., Ltd.