Panasonic MA3S781D User manual

1
Publication date: April 2004 SKH00061BED
Schottky Barrier Diodes (SBD)
MA3S781D (MA781WA), MA3S781E (MA781WK)
Silicon epitaxial planar type
For high speed switching
■Features
•Two MA3S781 (MA781) is contained in one package
•High-density mounting is possible
•Low forward voltage VF
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current Single IF30 mA
Double 20
Peak forward current Single IFM 150 mA
Double 110
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF=1 mA 0.4 V
VF2 IF=30 mA 1.0
Reverse current IRVR=30 V 1 µA
Terminal capacitance CtVR=1 V, f =1 MHz 1.5 pF
Reverse recovery time *trr IF=IR=10 mA 1.0 ns
Irr =1 mA, RL=100 Ω
Detection efficiency ηVIN =3 V(peak) , f =30 MHz 65 %
RL=3.9 kΩ, CL=10 pF
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF=10 mA
IR=10 mA
RL=100 Ω
10%
Input Pulse Output Pulse
Irr =1 mA
trtp
trr
VR
IF
t
t
A
EIAJ: SC-81
SSMini3-F2 Package
Marking Symbol
•MA3S781D: M2P •MA3S781E: M2R
Internal Connection
12
3
12
3
DE
MA3S781D MA3S781E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode
Unit: mm
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60+0.05
–0.03
0.12+0.05
–0.02
0.60+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3˚
(0.44)(0.44)
0.88
(0.375)
+0.05 –0.03
0.80±0.05
(0.80)
1.60±0.05
3˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit
Note) The part numbers in the parenthesis show conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA3S781D, MA3S781E
SKH00061BED
IFVFIRVRVFTa
IRTaCtVR
10
−2
0 0.4 0.8 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a
=125°C
75°C 25°C
−20°C
10 −1
1
10
102
103
10 −1110
Pulse width tW(ms)
Forward surge current IF(surge) (A)
tW
IF(surge)
Ta=25°C
10
−2
0 5 10 15 20 25 30
10
−1
1
10
10
2
10
3
Reverse voltage V
R
(V)
Reverse current I
R
(µA)
T
a
=125°C
75°C
25°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F
=30 mA
3 mA
1 mA
10
−2
−40 0 40 80 120 160 200
10
−1
1
10
10
2
10
3
Ambient temperature Ta(°C)
Reverse current IR(µA)
V
R
=30 V
10 V
1 V
0
1.0
2.0
3.0
0102030
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
IF(surge) tW
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
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