Panasonic MA4ZD14 User manual

Schottky Barrier Diodes (SBD)
1
Publication date: February 2008 SKH00111CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4ZD14
Silicon epitaxial planar type
For high speed switching
■Features
•Two isolated elements are contained in one package, allowing
high-density mounting
•Low forward voltage: VF<0.40 V
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Repetitive peak reverse-voltage VRRM 20 V
Forward current Single IF100 mA
Double *175
Peak forward Single IFM 300 mA
current Double *1225
Non-repetitive peak Single IFSM 1A
forward surge current
*2
Double *10.75
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current IRVR=10 V 20 µA
Forward voltage VF1 IF=5 mA 0.27 V
VF2 IF=100 mA 0.40
Terminal capacitance CtVR=0 V, f =1 MHz 25 pF
Reverse recovery time *trr IF=IR=100 mA 3 ns
Irr =10 mA, RL=100 Ω
■Electrical Characteristics Ta=25°C±3°C
Bias Insertion Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
W.F. Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF=100 mA
IR=100 mA
RL=100 Ω
10%
Input Pulse Output Pulse
Irr =10 mA
trtp
trr
VR
IF
t
t
A
Note) *1: Value of each diode in double diodes used.
*2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz. 4.*: trr measurement circuit
12
3
4
■Package
•Code
SMini4-F1
•Pin Name
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
■Marking Symbol: M5D
■Internal Connection

2
MA4ZD14
SKH00111CED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVR
10−5
10−6
0 0.2 0.4 0.6
10−4
10−3
10−2
10−1
1
Forward voltage VF(V)
Forward current IF(A)
Ta=125°C
75°C
25°C
−20°C
10
−5
10
−6
0 5 10 15 20 25 30
10
−4
10
−3
10
−2
10
−1
Reverse voltage VR(V)
Reverse current IR(A)
T
a
=125°C
25°C
75°C

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
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