Panasonic MA3X153A User manual

Switching Diodes
1
Publication date: February 2005 SKF00036DED
MA3X153 (MA153), MA3X153A (MA153A)
Silicon epitaxial planar type
For switching circuits
■Features
•Small terminal capacitance Ct
•Two diodes are connected in series in the package
■Absolute Maximum Ratings Ta= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage
MA3X153 VR40 V
MA3X153A 80
Maximum peak
MA3X153 VRM 40 V
reverse voltage
MA3X153A 80
Forward current Single IF100 mA
Series 65
Peak forward Single IFM 200 mA
current Series 130
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Internal Connection
Marking Symbol
•MA3X153: MC •MA3X153A: MP
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF= 100 mA 1.2 V
Reverse voltage MA3X153 VRIR= 100 µA40V
MA3X153A 80
Reverse current MA3X153 IRVR= 40 V 100 nA
MA3X153A VR= 75 V 100
Terminal capacitance CtVR= 0 V, f = 1 MHz 5.0 pF
Reverse recovery time *3trr*1IF= 10 mA, VR= 6 V 150 ns
trr*2Irr = 0.1 IR, RL= 100 Ω9ns
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *1: Between pins 2 and 3
*2: Between pins 1 and 3
*3: trr measurement circuit
12
3
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
1: Anode 1
2: Cathode 2
3: Anode 2
Cathode 1
EIAJ: SC-59 Mini3-G1 Package
Note) The part numbers in the parenthesis show conventional part number.
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
=50 Ω
t
p
=2 µs
t
r
=0.35 ns
δ=0.05
I
F
=10 mA
V
R
=6 V
R
L
=100 Ω
10%
Input Pulse Output Pulse
I
rr
=0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA3X153, MA3X153A
SKF00036DED
IFVF
VFTaIRVR
IRVR
IFVF
VFTa
IRTaIRTaCtVR
10
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage VF(V)
Forward current IF(mA)
2
3
D
1
(1-3)
1
Ta= 25°C
D1(1-3)
10
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
2
3
D
2
(3-2)
1
T
a
= 25°C
D
2
(3-2)
10
−2
10
−1
1
10
10
2
10
3
Reverse voltage VR(V)
Reverse current IR(µA)
0 1020304050
2
3
D
2
(3-2)D
1
(1-3)
1
Ta= 125°C
D1 ( 1-3 )
D1(1-3)
D2 ( 3-2 )
D2(3-2)
Ta= 25°C
10
−3
10
−2
10
−1
1
10
Reverse voltage V
R
(V)
Reverse current I
R
(µA)
0 20406080100
2
3
D2
( 3-2 ) D1 ( 1-3 )
1
T
a
= 125°C
T
a
= 25°C
D
1
(1-3)
D
1
(1-3)
D
2
(3-2)
D
2
(3-2)
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
2
3
D1(1-3)
1
I
F
=10 mA
1 mA
3 mA
0.1 mA
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
2
3
D2(3-2)
1
I
F
=10 mA
1 mA
3 mA
0.1 mA
10
−3
−40 0 40 80 120
10
−2
10
−1
1
10
102
Ambient temperature T
a
(°C)
Reverse current I
R
(nA)
2
3
D
2
(3-2)D
1
(1-3)
1
D
1
(1-3)
V
R
=80 V
D
2
(3-2)
40 V
80 V
40 V
10 −2
−40 0 40 80 120
10
−1
1
10
10
2
Ambient temperature T
a
(°C)
Reverse current IR(µA)
10
3
D
1
(1-3)
D
2
(3-2)
V
R
= 40 V
2
3
D
1
( 1-3 ) D
2
( 3-2 )
1
10 −1
1
10
0 1020304050
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
1
3
2
f =1 MHz
Ta=25°C
D2
(3-2)
D
1
(1-3)
D
1
(1-3)D
2
(3-2)
This product complies with the RoHS Directive (EU 2002/95/EC).

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