Panasonic MTM86627 User manual

Multi Chip Discrete
Publication date: March 2008 SJF00085AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86627
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: VR= 15 V, IF= 700 mA
Low on-resistance: Ron = 80 mW(VGS = –4.0 V)
Low short-circuit input capacitance (Common source) : Ciss = 300 pF
Small package: WSSMini6-F1 (1.6 mm ×1.6 mm ×0.5 mm)
Low drive Voltage: 1.8 V drive
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
FET
Drain-source surrender voltage VDSS –20 V
Gate-source surrender voltage VGSS ±10 V
Drain current ID–2.0 A
Peak drain current IDP –8.0 A
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
SBD
Reverse voltage VR15 V
Forward current (Average) IF(AV) 700 mA
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Overall Total power dissipation *PD540 mW
Note) *: Measuring on ceramic substrate at 40 mm ×38 mm ×0.2 mm
Absolute maximum rating without heat sink for PDis 150 mA
Package
Code
WSSMini6-F1
Pin Name
1: Gate 4: Cathode
2: Source 5: Drain
3: Anode 6: Drain
Marking Symbol: PK
Internal Connection
1
(G) 2 (S) 3 (A)
(K)
4
(D)
5
(D)
6

MTM86627
2SJF00085AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta= 25°C±3°C
FET
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID= –1.0 mA, VGS = 0 –20 V
Drain-source cutoff current IDSS VDS = –20 V, VGS = 0 –1.0 mA
Gate-source cutoff current IGSS VGS = ±8 V, VDS = 0 ±10 mA
Gate threshold voltage VTH ID= –1.0 mA, VDS = –10 V – 0.4 – 0.75 –1.1 V
Drain-source ON resistance *1RDS(on)
ID= –1.0 A, VGS = –4.0 V 80 120
mW
ID= –1.0 A, VGS = –2.5 V 100 170
ID= – 0.5 A, VGS = –1.8 V 140 230
Forward transfer admittance *1YfsID= –1.0 A, VDS = –10 V, f = 1 MHz 3.0 S
Short-circuit input capacitance (Common source) Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
300 pF
Short-circuit output capacitance (Common source) Coss 30 pF
Reverse transfer capacitance (Common source) Crss 35 pF
Turn-on delay time *2td(on)
VDD = –10 V, VGS = 0 V to –4 V, ID= –1 A
6 ns
Rise time *2tr8 ns
Turn-off delay time *2td(off)
VDD = –10 V, VGS = –4 V to 0 V, ID= –1 A
57 ns
Fall time *2tf55 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: ton , toff measurement circuit
VCC =−10 V
PW=10 µs
Duty Cycle ≤1% ID=−1.0 A
RL=10 Ω
VOUT
VIN
D
G
S
VIN
50 Ω
td(on) td(off)
0 V
−4 V VIN
VOUT
10%
90%
90%
10%
trtf
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF
IF= 500 mA 0.42 V
IF= 700 mA 0.45 V
Reverse current IR
VR= 6 V 90 mA
VR= 15 V 250 mA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

MTM86627
SJF00085AED 4
This product complies with the RoHS Directive (EU 2002/95/EC).
PDTaIDVDS RDS(on) VGS
RDS(on) IDCXVDS
040 80 160120
0
400
200
600
MTM86627_ PD-Ta
Drain power dissipation PD(mW)
Ambient temperature Ta(°C)
Single unit
Measuring on ceramic substrate at
40 mm × 38 mm × 0.8 mm
0−0.2 −0.4 −1.0−0.6 −0.8
0
−0.02
−0.04
−0.06
−0.08
−0.10
MTM86627_ ID-VDS
Drain current ID(A)
Drain-source voltage VDS (V)
−1.1 V
−1.0 V
−0.9 V
−0.8 V
VGS =−1.3 V
0−2−8−6−4
10
100
1 000
MTM86627_ RDS(on)-VGS
Drain-source ON resistance RDS(on) (Ω)
Gate-source voltage VGS (V)
ID=−1.0 A
0−0.5 −1.0 −1.5 −2.0
10−2
10−1
1
MTM86627_ RDS(on)-ID
Drain-source ON resistance RDS(on) (Ω)
Drain current ID(A)
VGS =1.8 V
4.0 V
2.5 V
−50 −15 −20−10
0
100
200
300
400
MTM86627_ CX-VDS
Drain-source voltage VDS (V)
Short-circuit input capacitance (Common source)
Ciss ,
Short-circuit output capacitance (Common source)
Coss ,
Reverse transfer capacitance (Common source) Crss (pF)
Ciss
Coss
Crss
Characteristics charts of FET
Characteristics charts of SBD
IFVFIRVRCt VR
0 0.2 0.60.4
1
10−1
10−5
10−4
10−3
10−2
MTM86627_IF-VF
Forward current IF(A)
Forward voltage VF(V)
Ta= 75°C
−25°C
25°C
0 10 20
10−1
10
102
103
1
MTM86627_IR-VR
Reverse current IR(µA)
Reverse voltage VR(V)
Ta= 75°C
−25°C
25°C
0 2010
0
40
20
60
80
100
MTM86627_Ct-VR
Terminal capacitance Ct(pF)
Reverse voltage VR(V)
f =1 MHz
Ta= 25°C

MTM86627
4SJF00085AED
This product complies with the RoHS Directive (EU 2002/95/EC).
WSSMini6-F1 Unit: mm
+0.05
−0.02
1.60 ±0.05
1.00 ±0.05
(0.50) (0.50)
1.60 ±0.05
(0.10)
1.40 ±0.05
0.50 ±0.05
0.20
+0.05
−0.03
0.13
6 5 4
1 2 3
0 to 0.02
5°
5°
(0.15)

Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.