Panasonic 2SC2631 User manual

Transistors
1
Publication date: March 2003 SJC00117BED
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
■Features
•Satisfactory linearity of forward current transfer ratio hFE
•High collector-emitter voltage (Base open) VCEO
•Small collector output capacitance (Common base, input open cir-
cuited) Cob
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 150 V
Collector-emitter voltage (Base open) VCEO 150 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC=100 µA, IB=0 150 V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=05V
Collector-base cutoff current (Emitter open) ICBO VCB =100 V, IE=01µA
Forward current transfer ratio *hFE VCE =5 V, IC=10 mA 130 330 
Collector-emitter saturation voltage VCE(sat) IC=30 mA, IB=3 mA 1 V
Transition frequency fTVCB =10 V, IE=−10 mA, f =200 MHz 160 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 3 pF
(Common base, input open circuited)
Noise voltage NV VCE =10 V, IC=1 mA, GV=80 dB 150 300 mV
Rg=100 kΩ, Function =FLAT
■Electrical Characteristics Ta=25°C ±3°C
5.0 ±0.2
0.7 ±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0 ±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S
hFE 130 to 220 185 to 330
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2631
2SJC00117BED
hFE ICfTIECob VCB
PCTaICVBE VCE(sat) IC
0 16040 12080
0
1.0
0.8
0.6
0.4
0.2
Collector power dissipation PC(W)
Ambient temperature Ta(°C)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
V
CE
=10 V
T
a
=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
600
500
400
300
200
100
VCE =10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−1−10 −100
0
300
250
200
150
100
50
V
CB
=10 V
f =200 MHz
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
110100
0
5
4
3
2
1
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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