Panasonic 2SC3757 User manual

Transistors
1
Publication date: February 2004 SJC00136CED
2SC3757
Silicon NPN epitaxial planar type
For high-speed switching
■Features
•Low collector-emitter saturation voltage VCE(sat)
•Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB =15 V, IE=0 0.1 µA
Emitter-base cutoff current (Collector open) IEBO VEB =4 V, IC=0 0.1 µA
Forward current transfer ratio *hFE VCE =1 V, IC=10 mA 60 200 
Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1 mA 0.17 0.25 V
Base-emitter saturation voltage VBE(sat) IC=10 mA, IB=1 mA 1.0 V
Transition frequency fTVCB =10 V, IE=−10 mA, f =200 MHz 450 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time ton
Refer to the switching time measurement
17 ns
Turn-off time toff circuit 17 ns
Storage time tstg 10 ns
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (E-B short) VCES 40 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC100 mA
Peak collector current ICP 300 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Marking Symbol: 2Y
0.40
+0.10
–0.05
(0.65) 1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank Q R
hFE 60 to 120 90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3757
2SJC00136CED
hFE ICfTIECob VCB
ICVCE VCE(sat) ICVBE(sat) IC
220 Ω
0.1 µF
50 Ω
V
CC
= 3 V
V
OUT
3.3 kΩ
50 Ω
V
IN
= 10 V
3.3 kΩ
V
BB
= −3 V
V
IN
V
OUT
t
on
90%
10%
90%
10%
t
off
(Waveform at A)
V
IN
V
OUT
10%
10%
t
stg
910 Ω
0.1 µF
0.1 µF
A
90 Ω
V
CC
= 10 V
V
OUT
500 Ω
50 Ω
V
IN
= 10 V
500 Ω
1 kΩ
V
BB
= 2 V
t
on
, t
off
test circuit t
stg
test circuit
Switching time measurement circuit
PCTa
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0 1.21.00.80.2 0.60.4
0
120
100
80
60
40
20
T
a
=25°C
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
I
B
=3.0 mA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
1 10 100 1 000
0.01
0.1
1
10
100
Ta=−25°C
25°C
75°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
600
500
400
300
200
100
V
CE
=1 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−1−10 −100 −1000
0
600
500
400
300
200
100
V
CB
=10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
6
5
4
3
2
1
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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