Panasonic MTM86628 User manual

Multi Chip Discrete
Publication date: November 2008 SJF00111AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86628
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86628 is the composite MOS FET (P-channel MOS FET and Schottky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: VR= 15 V, IF= 700 mA
Low on-resistance: Ron = 300 mW(VGS = –4.0 V)
Low short-circuit input capacitance (Common source): Ciss = 80 pF
Small surface mounting halogen-free package: WSSMini6-F1 (1.6 mm ×1.6
mm ×0.5 mm)
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
FET
Drain-source surrender voltage VDSS –20 V
Gate-source surrender voltage VGSS ±12 V
Drain current ID–1.0 A
Peak drain current *1IDP –4.0 A
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Total power dissipation
PD1 *2540 mW
PD2 *3150 mW
SBD
Reverse voltage VR15 V
Forward current (Average) IF(AV) 700 mA
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) *1: t = 10 µs, Duty Cycle < 1%
*2: Glass epoxy board: 25.4 mm × 25.4 mm ×0.8 mm
Copper foil of the drain portion should have a area of 300 mm2or more
*3: Stand-alone (without the board)
Package
Code
WSSMini6-F1
Pin Name
1: Gate 4: Cathode
2: Source 5: Drain
3: Anode 6: Drain
Marking Symbol: PL
Internal Connection
1
(G) 2 (S) 3 (A)
(K)
4
(D)
5
(D)
6

MTM86628
2SJF00111AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta= 25°C±3°C
FET
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID= –1.0 mA, VGS = 0 –20 V
Drain-source cutoff current IDSS VDS = –20 V, VGS = 0 –1.0 µA
Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 µA
Gate threshold voltage VTH ID= –1.0 mA, VDS = –10 V – 0.45 –1.0 –1.5 V
Drain-source ON resistance RDS(on)
ID= – 0.5 A, VGS = –4.0 V 300 420 mW
ID= – 0.5 A, VGS = –2.5 V 420 560
Forward transfer admittance YfsID= – 0.5 A, VDS = –10 V 1.0 2.0 S
Short-circuit input capacitance (Common source)
Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
80 pF
Short-circuit output capacitance (Common source) Coss 12 pF
Reverse transfer capacitance (Common source) Crss 12 pF
Turn-on delay time *td(on)
VDD = –15 V, VGS = –4.0 V, ID= – 0.5 A
12 ns
Rise time *tr6 ns
Turn-off delay time *td(off) 17 ns
Fall time *tf10 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ton , toff measurement circuit
VDD =−15 V
PW=10 µs
Duty Cycle ≤1% ID=−0.5 A
RL=30 Ω
VOUT
VIN
D
G
S
VIN
50 Ω
td(on) td(off)
0 V
−4 V VIN
VOUT
10%
90%
90%
10%
trtf
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF
IF= 500 mA 0.42 V
IF= 700 mA 0.45 V
Reverse current IR
VR= 6 V 90 µA
VR= 15 V 250 µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

MTM86628
SJF00111AED 4
This product complies with the RoHS Directive (EU 2002/95/EC).
PDTaIDVDS RDS(on) VGS
RDS(on) IDCXVDS
040 80 160120
0
400
200
600
MTM86628_ PD-Ta
Total power dissipation PD(mW)
Ambient temperature Ta(°C)
0−0.2 −0.4 −1.0−0.6 −0.8
0
−0.02
− 0.04
−0.06
−0.08
−0.10
MTM86628_ ID-VDS
Drain current ID(A)
Drain-source voltage VDS (V)
−1.4 V
−1.2 V
VGS =−1.6 V
0−2−10−8−6−4
0.1
0.2
0.3
0.4
0.5
MTM86628_ RDS(on)-VGS
Drain-source ON resistance RDS(on) (Ω)
Gate-source voltage VGS (V)
ID=−0.5 A
−0.1 −1.0
0
0.1
0.2
0.3
0.4
0.5
MTM86628_ RDS(on)-ID
Drain-source ON resistance RDS(on) (Ω)
Drain current ID(A)
VGS =2.5 V
4.0 V
−50 −15 −20−10
0
20
40
60
120
100
80
MTM86628_ CX-VDS
Drain-source voltage VDS (V)
Short-circuit input capacitance (Common source)
Ciss ,
Short-circuit output capacitance (Common source)
Coss ,
Reverse transfer capacitance (Common source) Crss (pF)
Ciss
Coss
Crss
Characteristics charts of FET
Characteristics charts of SBD
IFVFIRVRCt VR
0 0.2 0.60.4
103
1
10
102
MTM86628_IF-VF
Forward current IF(mA)
Forward voltage VF(V)
Ta= 75°C
−25°C
25°C
0 9 1263 15
10−1
1
10
103
102
104
MTM86628_IR-VR
Reverse current IR(µA)
Reverse voltage VR(V)
Ta= 75°C
−25°C
25°C
0 2010 155
0
40
20
60
80
100
MTM86628_Ct-VR
Terminal capacitance Ct(pF)
Reverse voltage VR(V)

MTM86628
4SJF00111AED
This product complies with the RoHS Directive (EU 2002/95/EC).
WSSMini6-F1 Unit: mm
+0.05
−0.02
1.60 ±0.05
1.00 ±0.05
(0.50) (0.50)
1.60 ±0.05
(0.10)
1.40 ±0.05
0.50 ±0.05
0.20
+0.05
−0.03
0.13
6 5 4
1 2 3
0 to 0.02
5°
5°
(0.15)

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