Panasonic Transistors 2SB1030A User manual

Transistors
Publication date : October 2008 SJC00418AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SD1423A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –7 V
Collector current IC– 0.5 A
Peak collector current ICP –1 A
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= –10 mA, IE= 0 –60 V
Collector-emitter voltage (Base open) VCEO IC= –2 mA, IB= 0 –50 V
Emitter-base voltage (Collector open) VEBO IE= –10 mA, IC= 0 –7 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE= 0 – 0.1 mA
Collector-Emitter cutoff current (Base open) ICEO VCE = –20 V, IB= 0 –1 mA
Forward current transfer ratio hFE1 *VCE = –10 V, IC= –150 mA 85 340

hFE2 VCE = –10 V, IC= –500 A 40
Collector-emitter saturation voltage VCE(sat) IC= –300 mA, IB= –30 mA – 0.35 – 0.60 V
Transition frequency fTVCB = –10 V, IE= 50 mA, f = 200 MHz 120 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE= 0, f = 1 MHz 3.5 15.0 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
Package
Code
NS-B1
Pin Name
1. Emitter
2. Collector
3. Base

2SB1030A
2SJC00418AED
This product complies with the RoHS Directive (EU 2002/95/EC).
PCTaICVCE VCE(sat) IC
VBE(sat) IC hFE IC fTIE
0 16040 12080
0
500
400
300
200
100
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
2SB1030_PC-Ta
0−12−10−8−2−6−4
0
−1.2
−1.0
− 0.8
− 0.6
− 0.4
− 0.2
Ta=25°C
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
IB=−10 mA
Collector current IC(A)
Collector-emitter voltage VCE (V)
2SB1030_IC-VCE
−0.01 −0.1 −1−10
−0.01
−0.1
−1
−10
−100 IC/ IB=10
Ta=−25°C
75°C
25°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC(A)
2SB1030_VBE(sat)-IC
−0.01 −0.1 −1−10
0
600
500
400
300
200
100
VCE =−10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(A)
2SB1030_hFE-IC
0.1 1 10 100
0
160
120
40
80
VCB =−10 V
Ta=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
2SB1030_fT-IE
−1−100−10
0
20
16
12
8
4
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)
2SB1030_Cob-VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
−10 −100 −1000
0
240
200
160
120
80
40
VCE =−10 V
Ta=25°C
Function =FLAT
4.7 kΩ
Rg=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current IC(µA)
2SB1030_NV-IC
−0.01 −0.1 −1−10
−0.01
−0.1
−1
−10
−100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(A)
2SB1030_VCE(sat)-IC
Cob VCB NV IC

2SB1030A
SJC00418AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
NS-B1 Unit: mm
(2.5) (2.5)
4.0 ±0.2
3.0 ±0.2
(0.8)
(0.8)
7.6
15.6 ±0.5
0.75 max.
0.45
123
0.45
2.0 ±0.2
0.7 ±0.1
+0.20
−0.10
+0.20
−0.10

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