Panasonic 2SD1450 User manual

Transistors
1
Publication date: April 2003 SJC00222BED
2SD1450
Silicon NPN epitaxial planar type
For low-frequency amplification
■Features
•Optimum for high-density mounting
•Allowing supply with the radial taping
•Low collector-emitter saturation voltage VCE(sat)
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 25 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 12 V
Collector current IC0.5 A
Peak collector current ICP 1A
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=025V
Collector-emitter voltage (Base open) VCEO IC=1 mA, IB=020V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=012V
Collector-base cutoff current (Emitter open) ICBO VCB =25 V, IE=0 100 nA
Forward current transfer ratio *1hFE1 *2VCE = 2 V, IC= 0.5 A 200 800 
hFE2 VCE = 2 V, IC= 1 A 60
Collector-emitter saturation voltage *1VCE(sat) IC=500 mA, IB=20 mA 0.13 0.40 V
Base-emitter saturation voltage *1VBE(sat) IC=500 mA, IB=20 mA 1.2 V
Transition frequency fTVCB =10 V, IE=−50 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 10 pF
(Common base, input open circuited)
ON resistance *3Ron 0.6 Ω
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45+0.20
–0.10
7.6
3.0±0.2
(0.8)(0.8)
15.6±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: Ron Measurement circuit
Rank R S T No rank
hFE1 200 to 350 300 to 500 400 to 800 200 to 800
VV
1 kΩ
Ron
=VB× 1
000 (Ω)
VA− VB
f = 1 kHz
V = 0.3 V
VB
IB=1 mA
VA
This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1450
2SJC00222BED
VBE(sat) IChFE ICfTIE
PCTaICVCE VCE(sat) IC
Cob VCB NV IC
0 16040 12080
500
400
300
200
100
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
012108264
0
2.4
2.0
1.6
1.2
0.8
0.4
Ta=25°C
IB=4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
=25
25°C
−25°C
T
a
=75°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(A)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=−25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0
1 200
1 000
800
600
400
200
VCE =2 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(A)
−0.1 −1−10 −100
0
400
300
100
200
V
CB
=10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
20
16
12
8
4
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
0.01 0.1 1
0
120
100
80
60
40
20
V
CE
=10 V
G
V
=80 dB
Function =FLAT
5 kΩ
R
g
=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current I
C
(mA)
This product complies with the RoHS Directive (EU 2002/95/EC).

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