Siemens SAK-C167CR-LM User manual

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 1 of 11 -
Microcontroller Components
Errata Sheet
May 29, 1998 / Release 1.1
Device: SAK-C167CR-LM
SAK-C167CR-L25M
Stepping Code / Marking: ES-DB, DB
Package: MQFP-144
This Errata Sheet describes the deviations from the current user documentation. The
classification and numbering system is module oriented in a continual ascending sequence
over several derivatives, as well already solved deviations are included. So gaps inside this
enumeration could occur.
The current documentation is: Data Sheet: C167CR-4RM Data Sheet 07.97,
C167SR/CR-L25M Data Sheet Addendum 1998-03
User’s Manual: C167 Derivatives User’s Manual V2.0 03.96
Instruction Set Manual 12.97 Version 1.2
Note:
Devices marked with EES- or ES are engineering samples which may not be
completely tested in all functional and electrical characteristics, therefore they should
be used for evaluation only.
The specific test conditions for EES and ES are documented in a separate Status Sheet.
Change summary to Errata Sheet Rel.1.0 for devices with stepping code/marking
ES-DB:
•Modifications of ADM field while bit ADST = 0 (ADC.11)
•P0H spikes after XPER write access and external 8-bit Non-multiplexed bus (X12)
•ADC Overload Current (ADCC.2)
•DC specification deviations added, limit for IP0L = –110 µA added
•AC timing relaxations added, t5 (ALE high time) tested according to specification

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 2 of 11 -
Functional Problems:
PWRDN.1: Execution of PWRDN Instruction while pin NMI# = high
When instruction PWRDN is executed while pin NMI# is at a high level, power down mode should not
be entered, and the PWRDN instruction should be ignored. However, under the conditions described
below, the PWRDN instruction may not be ignored, and no further instructions are fetched from
external memory, i.e. the CPU is in a quasi-idle state. This problem will only occur in the following
situations:
a) the instructions following the PWRDN instruction are located in external memory, and a multiplexed
bus configuration with memory tristate waitstate (bit MTTCx = 0) is used, or
b) the instruction preceeding the PWRDN instruction writes to external memory or an XPeripheral
(XRAM, CAN), and the instructions following the PWRDN instruction are located in external
memory. In this case, the problem will occur for any bus configuration.
Note: the on-chip peripherals are still working correctly, in particular the Watchdog Timer will reset the
device upon an overflow. Interrupts and PEC transfers, however, can not be processed. In case NMI#
is asserted low while the device is in this quasi-idle state, power down mode is entered.
Workaround:
Ensure that no instruction which writes to external memory or an XPeripheral preceeds the PWRDN
instruction, otherwise insert e.g. a NOP instruction in front of PWRDN. When a muliplexed bus with
memory tristate waitstate is used, the PWRDN instruction should be executed out of internal RAM or
XRAM.

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 3 of 11 -
CPU.17: Arithmetic Overflow by DIVLU instruction
For specific combinations of the values of the dividend (MDH,MDL) and divisor (Rn), the Overflow (V)
flag in the PSW may not be set for unsigned divide operations, although an overflow occured.
E.g.: MDH MDL Rn MDH MDL
F0F0 0F0Fh : F0F0h = FFFF FFFFh, but no Overflow indicated !
(result with 32-bit precision: 1 0000h)
The same malfunction appears for the following combinations:
n0n0 0n0n : n0n0
n00n 0nn0 : n00n
n000 000n : n000
n0nn 0nnn : n0nn where n means any Hex Digit between 8 ... F
i.e. all operand combinations where at least the most significat bit of the dividend (MDH) and the divisor
(Rn) is set.
In the cases where an overflow occurred after DIVLU, but the V flag is not set, the result in MDL is
equal to FFFFh.
Workaround:
Skip execution of DIVLU in case an overflow would occur, and explicitly set V = 1.
E.g.: CMP Rn, MDH
JMPR cc_ugt, NoOverflow ; no overflow if Rn > MDH
BSET V ; set V = 1 if overflow would occur
JMPR cc_uc, NoDivide ; and skip DIVLU
NoOverflow: DIVLU Rn
NoDivide: ... ; next instruction, may evaluate correct V flag
Note:
- the KEIL C compiler, run time libraries and operating system RTX166 do not generate or use
instruction sequences where the V flag in the PSW is tested after a DIVLU instruction.
- with the TASKING C166 compiler, for the following intrinsic functions code is generated which uses
the overflow flag for minimizing or maximizing the function result after a division with a DIVLU:
_div_u32u16_u16()
_div_s32u16_s16()
_div_s32u16_s32()
Consequently, an incorrect overflow flag (when clear instead of set) might affect the result of one of the
above intrinsic functions but only in a situation where no correct result could be calculated anyway.
These intrinsics first appeared in version 5.1r1 of the toolchain.
Libraries: not affected

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 4 of 11 -
ADC.11: Modifications of ADM field while bit ADST = 0
The A/D converter may unintentionally start one auto scan single conversion sequence when the
following sequence of conditions is true:
(1) the A/D converter has finished a fixed channel single or continuous conversion of an analog
channel n > 0 (i.e. contents of ADCON.ADCH = n during this conversion)
(2) the A/D converter is idle (i.e. ADBSY = 0)
(3) then the conversion mode in the ADC Mode Selection field ADM is changed to Auto Scan Single
(ADM = 10b) or Continuous (ADM = 11b) mode without setting bit ADST = 1 with the same
instruction
Under these conditions, the A/D converter will unintentionally start one auto scan single conversion
sequence, beginning with channel n-1, down to channel number 0.
In case the channel number ADCH has been changed before or with the same instruction which
selected the auto scan mode, this channel number has no effect on the unintended auto scan
sequence (i.e. it is not used in this auto scan sequence).
Note:
When a conversion is already in progress, and then the configuration in register ADCON is changed,
- the new conversion mode in ADM is evaluated after the current conversion
- the new channel number in ADCH and new status of bit ADST are evaluated after the current
conversion when a conversion in fixed channel conversion mode is in progress, and after the
current conversion sequence (i.e. after conversion of channel 0) when a conversion in an auto scan
mode is in progress.
In this case, it is a specified operational behaviour that channels n-1 .. 0 are converted when ADM is
changed to an auto scan mode while a fixed channel conversion of channel n is in progress (see e.g.
C167 User’s Manual, V2.0, p16-4)
Workaround:
When an auto scan conversion is to be performed, always start the A/D converter with the same
instruction which sets the configuration in register ADCON.
X9: Read Access to XPERs in Visible Mode
The data of a read access to an XBUS-Peripheral (XRAM, CAN) in Visible Mode is not driven to the
external bus. PORT0 is tristated during such read accesses.

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 5 of 11 -
X12: P0H spikes after XPER write access and external 8-bit Non-multiplexed bus
When an external 8-bit non-multiplexed bus mode is selected and P0H is used for general purpose I/O,
and an internal (byte or word) write access to an XBUS peripheral (e.g. XRAM, CAN, or I²C module) is
performed, and an external bus cycle is directly following the internal XBUS write cycle, then P0H is
actively driven with the write data for approx. 7ns (spikes on P0H).
The spikes also occur if P0H is configured as input. However, read operations from P0H are not
affected and will always return the correct logical state.
The spikes have the following position and shape in a typical application:
spikes occur after the rising edge of CLKOUT which follows the rising edge of ALE for the external bus
cycle
P0H.x = low --> output low voltage rises to approx. 2.5V, spike width approx. 7ns (@ 0.2 Vcc)
P0H.x = high --> output high voltage drops to approx. 2.0V, spike width approx. 7ns (@ 0.8 Vcc)
Referring to a worst case simulation the maximum width of the spikes may be 15ns with full amplitude
(Vcc/Vss). But this might not be seen on application level.
Note that if any of the other bus modes is selected in addition to the 8-bit non-multiplexed mode, P0H
can not be used for I/O per default.
Workaround:
- use a different port instead of P0H for I/O when (only) an external 8-bit non-multiplexed bus mode
is selected
- or use a different bus type (e.g. 8-bit multiplexed, where P1H may be used for I/O instead of P0H)
- or the spikes on P0H may be filtered with an application specific RC element,
- or do not perform an external bus access directly after an XBUS write access:
this may be achieved by an instruction sequence which is executed in internal ROM/Flash/OTP,
or internal RAM, or internal XRAM
e.g. ATOMIC #3 ; to prevent PEC transfers which may access external memory
instruction which writes to XBUS peripheral
NOP
NOP

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 6 of 11 -
Deviation from Electrical- and Timing Specification:
The following table lists the deviations of the DC/AC characteristics from the specification in the
C167CR-4RM Data Sheet 7.97 and C167SR/CR-L25M Data Sheet Addendum 1998-03
Problem Parameter Symbol Limit Values Unit Test
short name min. max. Condition
DCVOL.1 Output low voltage
(Port0/1/4, ALE, RD#,
WR#, WRH#/BHE,
CLKOUT, RSTOUT#)
VOL -0.45 V IOL = 2.0 mA
instead of
2.4 mA
DCAH.1 ALE active current IALEH 1000
instead of
500
-µA VOUT = 2.4 V
DCRL.1 RD#/WR# active current IRWL -600
instead of
-500
-µAV
OUT = VOLmax
DCP6L.1 Port 6 active current IP6L -600
instead of
-500
-µAV
OUT = VOLmax
DCP0L.1 Port 0 configuration
current IP0L -110 instead of
- 100
-µAV
OUT = VOLmax
DCHYS.1 Input Hysteresis
(Special Threshold) HYS 300 instead of
400
-mV-

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 7 of 11 -
Parameter Symbol Max CPU
= 20 Clock MHz Variable 1/2TCL = CPU Clock 1 to 20 MHz Unit
min. max. min. max.
WR#/WRH# low time
(with RW-delay) t12 38+tc instead of
40+tc
-2TCL-12+tc
instead of
2TCL -10+tc
-ns
WR#/WRH# low time
(no RW-delay) t13 63+tc instead of
65+tc
-3TCL-12+tc
instead of
3TCL -10+tc
-ns
ALE falling edge to
CS# t38 -7-ta instead of -
4-ta
10-ta -7-ta
instead of -
4-ta
10-ta ns
RDCS#/WRCS# low
time
(with RW-delay)
t48 38+tc
instead of
40+tc
-2TCL-12+tc
instead of
2TCL -10+tc
-ns
RDCS#/WRCS# low
time
(with RW-delay)
t49 63+tc
instead of
65+tc
-3TCL-12+tc
instead of
3TCL -10+tc
-ns
Notes:
1) Pin READY# has an internal pullup (all C167xx derivatives). This will be documented in the next
revision of the Data Sheet.
2) Timing t28: Parameter description and test changed from ’Address hold after RD#/WR#’ to ’Address
hold after WR#’. It is guaranteed by design that read data are internally latched by the controller before
the address changes.
3) During reset, the internal pullups on P6.[4:0] are active, independent whether the respective pins
are used for CS# function after reset or not.

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 8 of 11 -
ADCC.2: ADC Overload Current
During exceptional conditions in the application system an overload current IOV can occur on the analog
inputs of the A/D converter when VAIN > Vdd or VAIN < Vss. For this case, the following conditions are
specified in the Data Sheet:
IOVmax = | ±5 mA |
The specified total unadjusted error TUEmax = | ±2 LSB | is only guaranteed if overload conditions
occur on maximum 2 not selected analog input pins and the absolute sum of input overload currents
on all analog input pins does not exceed 10 mA.
Due to an internal problem, the specified TUE value is only met for a positive overload current 0 mA ≤
IOV ≤+5 mA (all currents flowing into the microcontroller are defined as positive and all currents flowing
out of it are defined as negative).
If the exceptional conditions in the application system cause a negative overload current, then the
maximum TUE can be significantly exceeded (depending on value of IOV and RAIN of converted
channel):
Problem Description in Detail:
1. Overload Current at analog Channel AN0 - AN9 and AN11 - AN15
If a negative overload current IOV occurs on analog input channel ANn (n≠10) than an additional
current IAN (crosstalk current) is caused at the neighbour channels ANn-1 and ANn+1. This behavior
causes an additional unadjusted error AUE to the ADC result.
Relation between IAN and IOV:IANn+1 = ovf1 * IOVn (n≠10)
IANn-1 = ovf1 * IOVn (n≠10)
2. Overload Current at digital Channel P7.7
A negative overload current IOV at digital Port P7.7 causes an additional current IAN at the analog
input AN0. The relation between both channels is also defined by ovf1:
IAN0 = ovf1 * IOVP7.7
3. Overload Current at analog Channel AN10
The behavior of an overload current at analog channel AN10 is different to all others because it has
an influence to VAGND. Depending on RAGND, the resistance between VAGND pin of the microcontroller
and analog ground of the system, the crosstalk current can cause an additional unadjusted error
AUE to all other analog channels.
In case RAGND < 40 Ohm the possible additional error to all other channels is smaler than 0.5 LSB
with the condition of IOVmax = - 5 mA at AN10. In that case the relation between AN10 and AN11 is:
IAN11 = ovf1 * IOV10 (RAGND < 40 Ohm)
In case RAGND > 40 Ohm the AUE has to be calculated via:
IANGND = ovf2 * IOV10 (RAGND > 40 Ohm)
5. Values of ovf1 and ovf2
Parameter Symbol Min Max
Overload factor_1 ovf1 - 0.0047 0
Overload factor_2 ovf2 - 0.0094 0

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 9 of 11 -
6. Effects on the Conversion Result and TUE
The effect on the conversion result and the TUE has to be calculated based on the current IANx and
the impedace of the analog source RASRC. IANn causes an external voltage U∆n at the analog channel
ANn which is the reason for an additional unadjusted error AUE of the conversion result. This AUE
can increase the specified total unadjusted error TUE (Specified value: TUE = ±2 LSB). The
voltage U∆n is nearly independent on the voltage value of the analog source.
U∆n = IANn * RASRC
AUE = U∆n / 1 LSB [U∆n in mV and LSB in mV]
TUE = (±2 LSB) - AUE
Note:
The overload current crosstalk effect at the analog inputs decreases the analog signal voltage
supplied by the analog signal source (the crosstalk current flows into the µC). In case of a crosstalk
current at VAGND in combination with RAGND > 40 Ohm the analog signal voltage is increased.
5. Calculation Example
Assumed system values:
IOV4 = -300 µA negative overload current at P5.4
RASRC = 20 kOhm resistance of the external sensor at P5.5
VAREF = 5 V 1 LSB = 4.9 mV
RAGND = 0.1 Ohm ÐGND shift error is neglictable
IAN5 = ovf1 * IOV4
IAN5 = (-4.7*E-3) * (- 300 µA)
IAN5 = 1.41 µA
U∆5 =I
AN5 * RASRC
U∆5 = 1.41 µA * 20 kOhm
U∆5 = 28.2 mV
AUE = U∆n / 1 LSB
AUE = 28.2 mV / 4.9 mV
AUE = 5.8 LSB
Result:
The negative overload current IOV4 of this system example can distort the real result of AN3 and AN4
by an additional unadjusted error, AUE = 5.8 LSB. The TUE is in the range of –7.8LSB to 3.8LSB.

Semiconductor Group Errata Sheet, C167CR-LM, ES-DB, DB, 1.1, Mh - 10 of 11 -
History List (since device step BA)
Functional Problems
Functional
Problem Short Description Fixed in step
PWRDN.1 Execution of PWRDN Instruction while pin NMI# = high
CPU.8 Jump instruction in EXTEND sequence CB
CPU.9 PEC Transfers during instruction execution from Internal RAM CB
CPU.11 Stack Underflow during Restart of Interrupted Multiply CB
CPU.17 Arithmetic Overflow by DIVLU instruction
RST.1 System Configuration via P0L.0 during Software/Watchdog Timer Reset CB
RST.3 Bidirectional Hardware Reset DA
ADC.8 CC31/ADC Interference CB
ADC.10 Start of Standard Conversion at End of Injected Conversion CB
ADC.11 Modifications of ADM field while bit ADST = 0
X9 Read Access to XPERs in Visible Mode
X12 P0H spikes after XPER write access and external 8-bit Non-multiplexed bus
PINS.1 OUTPUT Signal Rise Time DB
AC/DC Deviations
AC/DC
Deviation Short Description Fixed in step
see pages 6 .. 9