Silicon Laboratories Gecko MGM210P User manual

MGM210P 无线 Gecko 多协议模块数据表
MGM210P 是旨在满足网状网络的线路供电式 IoT 产品的性能、安
全性和可靠性要求的模块。
它基于 EFR32MG21 SoC，支持 Zigbee®、OpenThread®、Bluetooth® 和多协议连接 (Zigbee +
Bluetooth)，可提供一流的 RF 范围和性能，其功能和 OTA 固件更新可满足未来需求，具有最先进的
安全性、较低的有功电流消耗以及适合在苛刻环境条件下运行的温度等级。
MGM210P 是全面的解决方案，具有完全可升级的强大软件栈、全球范围内的法规认证、先进的开发
和调试工具以及可简化和缩减产品开发周期和部署的支持功能，从而帮助缩短产品上市时间。
MGM210P 面向广泛的应用，包括：
•智能家居
•互连照明
•建筑自动化及安全
主要特点
• Zigbee、OpenThread、Bluetooth 5.1 和多
协议连接
•内置天线和 RF 引脚
• +10 和 +20 dBm TX 功率版本
• -103.9 dBm 802.15.4 RX 灵敏度
•在 1 Mbps 时，Bluetooth RX 灵敏度为
-97.0 dBm
• 32 位 ARM Cortex-M33（内核为 38.4
MHz）
• 1024/96 kB 闪存/RAM 内存
•安全元件或安全库
•优秀 MCU 外围设备集
• 20 个 GPIO 引脚
• -40 至 +125 C°
• 12.9 mm x 15.0 mm x 2.2 mm
Timers and Triggers
32-bit bus
Peripheral Reflex System
Serial
Interfaces
I/O Ports Analog I/F
Lowest power mode with peripheral operational:
USART
I2C
External
Interrupts
General
Purpose I/O
Pin Reset
Pin Wakeup
ADC
Analog
Comparator
EM4—Shutoff
Energy
Management
Brown-Out
Detector
Voltage
Regulator
Power-On
Reset
SecurityClock Management
LF
RC Oscillator
HF
RC Oscillator
EM2 HF RC
Oscillator
Crypto Acceleration
Secure Debug
Authentication
Ultra LF RC
Oscillator
Core / Memory
ARM CortexTM M33 processor
with DSP extensions,
FPU and TrustZone
ETM Secure Debug RAM Memory LDMA
Controller
Flash Program
Memory
Real Time
Capture Counter
Timer/Counter
Low Energy
Timer
Watchdog
Timer
Protocol Timer
Radio Transceiver
DEMOD
AGC
IFADC
CRC
BUFC
MOD
FRC
RAC
Frequency
Synth
PGA
EM3—StopEM2—Deep SleepEM1—SleepEM0—Active
Fast Startup
RC Oscillator
Back-Up Real
Time Counter
RF Frontend
I
Q
PA
LNA
PA
Crystal
38.4
MHz
Antenna
LF Crystal
Oscillator
Chip
Antenna
Matching
RF Pin
Secure Boot
with RTSL
Extended
Unique Identifier
HF Crystal
Oscillator TRNG
DPA Countermeasures
Anti-Tamper
silabs.com | Building a more connected world. Copyright © 2022 by Silicon Laboratories Rev. 1.2

1. 功能
•支持的协议
• Zigbee
• Thread
• Bluetooth 5.1
•网状 Bluetooth
•多协议 (Zigbee + Bluetooth 5.1)
•无线片上系统
• 2.4 GHz 无线电
• TX 功率高达 +20 dBm
•32 位 ARM Cortex®-M33，带有 DSP 指令和浮点单元，可实现高效的
信号处理
• 1024 kB 闪存程序存储器
• 96 kB RAM 数据存储器
•嵌入式跟踪宏单元 (ETM)，可用于高级调试
•接收器性能
•在 250 kbps O-QPSK DSSS 的条件下，灵敏度为 -103.9 dBm (1%
PER)
•在 125 kbps GFSK 的条件下，灵敏度为 -104.5 dBm (0.1% BER)
•在 500 kbps GFSK 的条件下，灵敏度为 -100.1 dBm (0.1% BER)
•在 1 Mbps GFSK 的条件下，灵敏度为 -97.0 dBm (0.1% BER)
•在 2 Mbps GFSK 的条件下，灵敏度为 -94.1 dBm (0.1% BER)
•电流消耗
•在 250 kbps O-QPSK DSSS 的条件下，RX 电流为 9.4 mA
•在 1 Mbps GFSK 的条件下，RX 电流为 9.3 mA
•在 0 dBm 的条件下，TX 电流为 16.1 mA (MGM210Px22)
•在 10 dBm 的条件下，TX 电流为 34.1 mA (MGM210Px22)
•在 20 dBm 的条件下，TX 电流为 181.3 mA (MGM210Px32)
•在活动模式 (EM0) 下，运行功耗为 50.9 μA/MHz
• EM2 DeepSleep 电流为 5.1 μA（RTCC 从 LFXO 运行，Bluetooth 协
议栈未运行）
• EM2 DeepSleep 电流为 8.5 μA（RTCC 从 LFXO 运行，Bluetooth 协
议栈运行）
•监管认证
• CE
• ISED
• FCC
•韩国
•日本
•工作范围
• 1.71 至 3.8 V
• -40 至 +125°C
•尺寸
• 12.9 mm x 15.0 mm x 2.2 mm
•安全
•通过信任根和安全加载程序 (RTSL) 进行的安全启动 1
•通过 DPA 对策实现的硬件加密加速 1，适用于 AES128/256、
SHA-1、SHA-2（高达 256 位）、ECC（高达 256 位）、ECDSA 和
ECDH
•符合 NIST SP800-90 和 AIS-31 标准的真随机数生成器 (TRNG)
•ARM® TrustZone®
•安全调试接口锁定/解锁
•MCU 外围设备
• 12 位 1 Msps SAR 模拟数字转换器 (ADC)
• 2 个模拟比较器 (ACMP)
• 20 个带有输出状态保持和异步中断功能的通用 I/O 引脚
• 8 信道 DMA 控制器
• 12 信道外围设备反射系统 (PRS)
• 2 个 16 位定时器/计数器
（3 个比较/捕获/PWM 通道）
• 1 个 32 位定时器/计数器
（3 个比较/捕获/PWM 通道）
• 32 位实时计数器
• 24 位低能耗定时器，用于波形生成
• 2 × 看门狗定时器
• 3 个通用同步/异步接收器/传输器 (UART/SPI/SmartCard (ISO 7816)/
IrDA/I2S)
•2 个 I2C 接口，带 SMBus 支持
1. 具有 Secure Element (SE) 固件 v1.1.2 或更高版本
MGM210P 无线 Gecko 多协议模块数据表
功能
silabs.com | Building a more connected world. Rev. 1.2 | 2

2. Ordering Information
Table 2.1. Ordering Information
Ordering Code Protocol Stack TX Power
Secure
Vault Antenna
Flash
(kB)
RAM
(kB) GPIO Temp Range Packaging
MGM210PA22JIA2 • Zigbee
•OpenThread
• Bluetooth 5.1
10 dBm Mid Built-in
and RF
pin
1024 96 20 -40 to 125 °C Cut Tape
MGM210PA22JIA2R • Zigbee
•OpenThread
• Bluetooth 5.1
10 dBm Mid Built-in
and RF
pin
1024 96 20 -40 to 125 °C Reel
MGM210PA32JIA2 • Zigbee
•OpenThread
• Bluetooth 5.1
20 dBm Mid Built-in
and RF
pin
1024 96 20 -40 to 125 °C Cut Tape
MGM210PA32JIA2R • Zigbee
•OpenThread
• Bluetooth 5.1
20 dBm Mid Built-in
and RF
pin
1024 96 20 -40 to 125 °C Reel
MGM210PB22JIA2 • Zigbee
•OpenThread
• Bluetooth 5.1
10 dBm High Built-in
and RF
pin
1024 96 20 -40 to 125 °C Cut Tape
MGM210PB22JIA2R • Zigbee
•OpenThread
• Bluetooth 5.1
10 dBm High Built-in
and RF
pin
1024 96 20 -40 to 125 °C Reel
MGM210PB32JIA2 • Zigbee
•OpenThread
• Bluetooth 5.1
20 dBm High Built-in
and RF
pin
1024 96 20 -40 to 125 °C Cut Tape
MGM210PB32JIA2R • Zigbee
•OpenThread
• Bluetooth 5.1
20 dBm High Built-in
and RF
pin
1024 96 20 -40 to 125 °C Reel
All MGM210P devices operate in the 2.4 GHz ISM frequency band.
Refer to 4.5 RF Transmitter General Characteristics for maximum TX power figures.
End-product manufacturers must verify that the module is configured to comply with the proper regulatory limits for each region, in ac-
cordance with the formal certification test reports for the device.
MGM210P modules are pre-programmed with UART XMODEM bootloader.
Devices may be referred to by their product family name (e.g. MGM210P), model name (MGM210P22A / MGM210P32A) or full order-
ing code throughout this document.
The SLWSTK6102A Wireless Gecko Module Starter Kit is available for MGM210P evaluation and development, as well as the
SLWRB4308A (+20 dBm TX, Secure Element), SLWRB4308B (+10 dBm TX, Secure Element), SLWRB4308C (+20 dBm TX, Secure
Vault) and SLWRB4308D (+10 dBm TX, Secure Vault) radio boards.
MGM210P Wireless Gecko Multi-Protocol Module Data Sheet
Ordering Information
silabs.com | Building a more connected world. Rev. 1.2 | 3

Table of Contents
1. Features .................................2
2. Ordering Information ............................3
3. System Overview ..............................6
3.1 Block Diagram ..............................6
3.2 EFR32MG21 SoC .............................6
3.3 Antenna ................................6
3.4 Power Supply ..............................7
3.5 Security ................................7
3.5.1 Secure Boot with Root of Trust and Secure Loader (RTSL) .............7
3.5.2 Cryptographic Accelerator.........................8
3.5.3 True Random Number Generator ......................8
3.5.4 Secure Debug with Lock/Unlock.......................8
3.5.5 DPA Countermeasures..........................8
3.5.6 Secure Key Management with PUF .....................8
3.5.7 Anti-Tamper .............................9
3.5.8 Secure Attestation ...........................9
4. Electrical Specifications ..........................10
4.1 Absolute Maximum Ratings..........................10
4.2 General Operating Conditions .........................11
4.3 MCU Current Consumption at 3.0V .......................12
4.4 Radio Current Consumption at 3.0V .......................13
4.5 RF Transmitter General Characteristics .....................14
4.6 RF Transmitter Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band........15
4.7 RF Receiver General Characteristics ......................15
4.8 RF Receiver Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band ........16
4.9 RF Receiver Characteristics for Bluetooth Low Energy at 1 Mbps .............17
4.10 RF Receiver Characteristics for Bluetooth Low Energy at 2 Mbps ............18
4.11 RF Receiver Characteristics for Bluetooth Low Energy at 500 kbps ............19
4.12 RF Receiver Characteristics for Bluetooth Low Energy at 125 kbps ............20
4.13 High-Frequency Crystal ..........................21
4.14 Low Frequency Crystal Oscillator .......................21
4.15 GPIO Pins ...............................22
4.16 Microcontroller Peripherals .........................23
4.17 Typical Performance Curves .........................23
4.17.1 Antenna Radiation and Efficiency ......................24
5. Reference Diagrams............................ 25
5.1 Network Co-Processor (NCP) Application with UART Host ...............25
silabs.com | Building a more connected world. Rev. 1.2 | 4

5.2 SoC Application .............................26
6. Pin Definitions ..............................27
6.1 Module Pinout ..............................27
6.2 Alternate Pin Functions ...........................28
6.3 Analog Peripheral Connectivity ........................28
6.4 Digital Peripheral Connectivity .........................29
7. Design Guidelines ............................32
7.1 Layout and Placement ...........................32
7.2 Proximity to Other Materials .........................34
7.3 Proximity to Human Body ..........................34
7.4 Reset .................................34
7.5 Debug .................................34
7.6 Packet Trace Interface (PTI) .........................35
8. Package Specifications ..........................36
8.1 Package Outline .............................36
8.2 PCB Land Pattern .............................37
8.3 Package Marking .............................38
9. Soldering Recommendations ........................39
10. Tape and Reel .............................40
10.1 Tape and Reel .............................40
10.2 Moisture Sensitivity Level ..........................40
11. Certifications ..............................41
11.1 Qualified Antennas ............................41
11.2 CE and UKCA - EU and UK .........................41
11.3 FCC - USA ...............................41
11.4 ISED - Canada .............................44
11.5 MIC - Japan ..............................46
11.6 KC - South Korea ............................47
11.7 Proximity to Human Body ..........................47
11.8 Bluetooth Qualification ...........................47
12. Revision History............................. 48
silabs.com | Building a more connected world. Rev. 1.2 | 5

3. System Overview
3.1 Block Diagram
The MGM210P module is a highly-integrated, high-performance system with all the hardware components needed to enable 2.4 GHz
wireless connectivity and support robust networking capabilities via multiple protocols.
Built around the EFR32MG21 Wireless Gecko SoC, the MGM210P includes, both, a built-in antenna and a 50 Ω-matched RF pin, RF
matching networks (optimized for transmit power efficiency), supply decoupling and filtering components, a 38.4 MHz reference crystal,
and an RF shield. Also, it allows using an external 32 kHz crystal as a low frequency reference signal via GPIO pins. A 32.768 kHz
crystal provides an accurate timing reference for low energy modes.
Since the RF matching networks are optimized for transmit power efficiency, modules rated for +20 dBm will show non-optimal current
consumption and performance when operated at a lower output power (e.g. +10 or 0 dBm). The same applies for modules rated for +10
dBm.
IOVDD
RFPIN
Silicon Labs
EFR32MG21
HF XTAL
Supply Decoupling
RF SHIELD
VDD
GPIO
GND
(up to 20)
RF Match
RF Match
Antenna
External LF XTAL option
Figure 3.1. MGM210P Block Diagram
3.2 EFR32MG21 SoC
The EFR32MG21 SoC features a 32-bit ARM Cortex M33 core, a 2.4 GHz high-performance radio, 1 MB of Flash memory, a dedicated
core for security, a rich set of MCU peripherals, and various clock management and serial interfacing options. Consult the EFR32xG21
Wireless Gecko Reference Manual and the EFR32MG21A Data Sheet for details on the Secure Vault Mid MGM210PAxx devices. For
MGM210PBxx devices with the Secure Vault High feature, consult the EFR32MG21B Data Sheet.
3.3 Antenna
MGM210P modules include a built-in antenna with the characteristics detailed in the table below. They also include a 50 Ω-matched RF
pin to enable the use of an external antenna instead of the one built-in. See Section 4.17.1 Antenna Radiation and Efficiency and Sec-
tion 11.1 Qualified Antennas for other relevant details. Antenna diversity is not supported.
Table 3.1. Antenna Efficiency and Peak Gain
Parameter With optimal layout Note
Efficiency -1 to -2 dB Antenna efficiency, gain and radiation pattern are highly depend-
ent on the application PCB layout and mechanical design. Refer
to the Design Guidelines for recommendations to achieve optimal
antenna performance.
Peak gain 1.86 dBi
MGM210P Wireless Gecko Multi-Protocol Module Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.2 | 6

3.4 Power Supply
The MGM210P requires a single nominal supply level of 3.0 V to operate. However, it can support use cases needing different levels
for the main supply (VDD) and for digital IO (IOVDD).
The DECOUPLE pin exposes the SoC's on-chip digital supply regulator output and allows introducing an external digital supply source
via a PMIC, for example. The default recommendation is to leave the DECOUPLE pin disconnected.
All necessary components for supply decoupling and filtering are included in the module.
3.5 Security
MGM210P modules support one of two levels in the Security Portfolio offered by Silicon Labs: Secure Vault Mid or Secure Vault High.
Secure Vault is a collection of technologies that deliver state-of-the-art security and upgradability features to protect and future-proof
IoT devices against costly threats, attacks and tampering. Secure Vault Mid is the hardware-based subsystem at the core of Secure
Vault that enables a subset of its features only. MGM210PB part numbers support Secure Vault High and MGM210PA part numbers
support Secure Vault Mid.
Table 3.2. Security Features and Levels
Feature Secure Vault
Mid High
Secure Boot with Root of Trust and Secure Loader (RTSL) X X
Cryptographic Accelerator X X
ARM TrustZone X X
True Random Number Generator (TRNG) X X
Secure Debug with Lock/Unlock X X
DPA Countermeasures X X
Secure Key Management with PUF X
Anti-Tamper X
Secure Attestation X
3.5.1 Secure Boot with Root of Trust and Secure Loader (RTSL)
The Secure Boot with RTSL authenticates a chain of trusted firmware that begins from an immutable memory (ROM).
It prevents malware injection, prevents rollback, ensures that only authentic firmware is executed, and protects Over The Air updates.
For more information about this feature, see AN1218: Series 2 Secure Boot with RTSL.
MGM210P Wireless Gecko Multi-Protocol Module Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.2 | 7

3.5.2 Cryptographic Accelerator
The Cryptographic Accelerator is an autonomous hardware accelerator with Differential Power Analysis (DPA) countermeasures to pro-
tect keys.
It supports AES encryption and decryption with 128/192/256-bit keys, ChaCha20 encryption, and Elliptic Curve Cryptography (ECC) to
support public key operations, and hashes.
Supported block cipher modes of operation for AES include:
• ECB (Electronic Code Book)
• CTR (Counter Mode)
• CBC (Cipher Block Chaining)
• CFB (Cipher Feedback)
• GCM (Galois Counter Mode)
• CCM (Counter with CBC-MAC)
• CBC-MAC (Cipher Block Chaining Message Authentication Code)
• GMAC (Galois Message Authentication Code)
The Cryptographic Accelerator accelerates Elliptical Curve Cryptography and supports the NIST (National Institute of Standards and
Technology) recommended curves including P-192, P-256, P-384, and P-521 for ECDH (Elliptic Curve Diffie-Hellman) key derivation,
and ECDSA (Elliptic Curve Digital Signature Algorithm) sign and verify operations. Also supported is the non-NIST Curve25519 for
ECDH and Ed25519 for EdDSA (Edwards-curve Digital Signature Algorithm) sign and verify operations.
Secure Vault also supports ECJ-PAKE (Elliptic Curve variant of Password Authenticated Key Exchange by Juggling) and PBKDF2
(Password-Based Key Derivation Function 2).
Supported hashes include SHA-1, SHA-2/256/384/512 and Poly1305.
This implementation provides a fast and energy efficient solution to state of the art cryptographic needs.
3.5.3 True Random Number Generator
The True Random Number Generator module is a non-deterministic random number generator that harvests entropy from a thermal
energy source. It includes start-up health tests for the entropy source as required by NIST SP800-90B and AIS-31 as well as online
health tests required for NIST SP800-90C.
The TRNG is suitable for periodically generating entropy to seed an approved pseudo random number generator.
3.5.4 Secure Debug with Lock/Unlock
For obvious security reasons, it is critical for a product to have its debug interface locked before being released in the field.
In addition, Secure Vault High also provides a secure debug unlock function that allows authenticated access based on public key cryp-
tography. This functionality is particularly useful for supporting failure analysis while maintaining confidentiality of IP and sensitive end-
user data.
For more information about this feature, see AN1190: Series 2 Secure Debug.
3.5.5 DPA Countermeasures
The AES and ECC accelerators have Differential Power Analysis (DPA) countermeasures support. This makes it very expensive from a
time and effort standpoint to use DPA to recover secret keys.
3.5.6 Secure Key Management with PUF
Key material in Secure Vault High products is protected by "key wrapping" with a standardized symmetric encryption mechanism. This
method has the advantage of protecting a virtually unlimited number of keys, limited only by the storage that is accessible by the Cor-
tex-M33, which includes off-chip storage as well. The symmetric key used for this wrapping and unwrapping must be highly secure be-
cause it can expose all other key materials in the system. The Secure Vault Key Management system uses a Physically Unclonable
Function (PUF) to generate a persistent device-unique seed key on power up to dynamically generate this critical wrapping/unwrapping
key which is only visible to the AES encryption engine and is not retained when the device loses power.
MGM210P Wireless Gecko Multi-Protocol Module Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.2 | 8

3.5.7 Anti-Tamper
Secure Vault High devices provide internal tampers monitoring the system such as voltage, temperature, and electromagnetic pulses
as well as detecting tamper of the security sub-system itself. Additionally, 8 external configurable tamper pins support external tamper
sources, such as case tamper switches.
For each tamper event, the user is able to select the severity of the tamper response ranging from an interrupt, to a reset, to destroying
the PUF reconstruction data which will make all protected key materials un-recoverable and effectively render the device inoperable.
The tamper system also has an internal resettable event counter with programmable trigger threshold and refresh periods to mitigate
false positive tamper events.
For more information about this feature, see AN1247: Anti-Tamper Protection Configuration and Use.
3.5.8 Secure Attestation
Secure Vault High products support Secure Attestation, which begins with a secure identity that is created during the Silicon Labs man-
ufacturing process. During device production, each device generates its own public/private keypair and securely stores the wrapped
private key into immutable OTP memory and this key never leaves the device. The corresponding public key is extracted from the de-
vice and inserted into a binary DER-encoded X.509 device certificate, which is signed into a Silicon Labs CA chain and then program-
med back into the chip into an immutable OTP memory.
The secure identity can be used to authenticate the chip at any time in the life of the product. The production certification chain can be
requested remotely from the product. This certification chain can be used to verify that the device was authentically produced by Silicon
Labs. The device unique public key is also bound to the device certificate in the certification chain. A challenge can be sent to the chip
at any point in time to be signed by the device private key. The public key in the device certificate can then be used to verify the chal-
lenge response, proving that the device has access to the securely-stored private key, which prevents counterfeit products or imperso-
nation attacks.
For more information about this feature, see AN1268: Authenticating Silicon Labs Devices Using Device Certificates.
MGM210P Wireless Gecko Multi-Protocol Module Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.2 | 9

4. Electrical Specifications
All electrical parameters in all tables are specified under the following conditions, unless stated otherwise:
•Typical values are based on TA=25 °C and VDD supply at 3.0 V, by production test and/or technology characterization.
• Radio performance numbers are measured in conducted mode, based on Silicon Laboratories reference designs using output pow-
er-specific external RF impedance-matching networks for interfacing to a 50 Ω antenna.
• Minimum and maximum values represent the worst conditions across supply voltage, process variation, and operating temperature,
unless stated otherwise.
4.1 Absolute Maximum Ratings
Stresses above those listed below may cause permanent damage to the device. This is a stress rating only and functional operation of
the devices at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect device reliability. For more information on the available quality and relia-
bility data, see the Quality and Reliability Monitor Report at http://www.silabs.com/support/quality/pages/default.aspx.
Table 4.1. Absolute Maximum Ratings
Parameter Symbol Test Condition Min Typ Max Unit
Storage temperature range TSTG -50 — +150 °C
Voltage on any supply pin VDDMAX -0.3 — 3.8 V
Voltage ramp rate on VDD
supply pin
VDDRAMPMAX — — 1.0 V / µs
DC voltage on any GPIO pin VDIGPIN -0.3 — VIOVDD +
0.3
V
Total current into VDD power
lines
IVDDMAX Source — — 200 mA
Total current into GND pin IGNDMAX Sink — — 200 mA
Current per I/O pin IIOMAX Sink — — 50 mA
Source — — 50 mA
Current for all I/O pins IIOALLMAX Sink — — 200 mA
Source — — 200 mA
MGM210P Wireless Gecko Multi-Protocol Module Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.2 | 10

4.2 General Operating Conditions
This table specifies the general operating temperature range and supply voltage range for all supplies. The minimum and maximum
values of all other tables are specifed over this operating range, unless otherwise noted.
Table 4.2. General Operating Conditions
Parameter Symbol Test Condition Min Typ Max Unit
Operating ambient tempera-
ture range
TA-I temperature grade -40 — +125 ° C
VDD Supply Voltage VDD 1.71 3.0 3.8 V
IOVDD operating supply volt-
age (All IOVDD pins)
VIOVDD 1.71 3.0 3.8 V
HCLK and Core frequency fHCLK MODE = WS1, RAMWSEN = 11— — 80 MHz
MODE = WS1, RAMWSEN = 01— — 50 MHz
MODE = WS0, RAMWSEN = 01— — 39 MHz
PCLK frequency fPCLK — — 50 MHz
EM01 Group A clock fre-
quency
fEM01GRPACLK — — 80 MHz
HCLK Radio frequency fHCLKRADIO 38 38.4 40 MHz
Note:
1. Flash wait states are set by the MODE field in the MSC_READCTRL register. RAM wait states are enabled by setting the RAMW-
SEN bit in the SYSYCFG_DMEM0RAMCTRL register.
MGM210P Wireless Gecko Multi-Protocol Module Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.2 | 11

4.3 MCU Current Consumption at 3.0V
Unless otherwise indicated, typical conditions are: VDD = 3.0 V. TA = 25 °C. Minimum and maximum values in this table represent the
worst conditions across process variation at TA = 25 °C.
Table 4.3. MCU Current Consumption at 3.0V
Parameter Symbol Test Condition Min Typ Max Unit
Current consumption in EM0
mode with all peripherals dis-
abled1
IACTIVE 80 MHz HFRCO, CPU running
Prime from flash
— 50.9 — µA/MHz
80 MHz HFRCO, CPU running
while loop from flash
— 45.6 55.5 µA/MHz
80 MHz HFRCO, CPU running
CoreMark loop from flash
— 59.8 — µA/MHz
38.4 MHz crystal, CPU running
while loop from flash
— 63.8 — µA/MHz
Current consumption in EM1
mode with all peripherals dis-
abled1
IEM1 80 MHz HFRCO — 28.7 37.6 µA/MHz
38.4 MHz crystal — 46.9 — µA/MHz
Current consumption in EM2
mode
IEM2 Full RAM retention and RTC run-
ning from LFXO (Bluetooth Stack
not running)
— 5.1 — µA
Full RAM retention, RTCC run-
ning, and Bluetooth Stack running
from LFXO
— 8.5 — µA
1 bank (16 kB) RAM retention and
RTC running from LFRCO
— 4.5 10.5 µA
Current consumption in EM3
mode
IEM3 Full RAM retention and RTC run-
ning from ULFRCO
— 4.8 11.4 µA
1 bank (16 kB) RAM retention and
RTC running from ULFRCO
— 4.3 — µA
Current consumption in EM4
mode
IEM4 No BURTC, no LF oscillator — 0.21 0.5 µA
Current consumption during
reset
IRST Hard pin reset held — 146 — µA
Current consumption per re-
tained 16kB RAM bank in
EM2
IRAM — 0.10 — µA
Note:
1. The typical EM0/EM1 current measurement includes some current consumed by the security core for periodical housekeeping
purposes. This does not include current consumed by user-triggered security operations, such as cryptographic calculations.
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4.4 Radio Current Consumption at 3.0V
RF current consumption measured with MCU in EM1, HCLK = 38.4 MHz, and all MCU peripherals disabled. Unless otherwise indica-
ted, typical conditions are: VDD = 3.0V. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across
process variation at TA = 25 °C.
Table 4.4. Radio Current Consumption at 3.0V
Parameter Symbol Test Condition Min Typ Max Unit
Current consumption in re-
ceive mode, active packet
reception
IRX_ACTIVE 125 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 9.3 — mA
500 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 9.3 — mA
1 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 9.3 — mA
2 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 9.9 — mA
802.15.4 receiving frame, f = 2.4
GHz, ZigBee stack running
— 9.4 — mA
Current consumption in re-
ceive mode, Stack running
IRX_LISTEN 125 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 9.1 — mA
500 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 9.1 — mA
1 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 9.1 — mA
2 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooh stack running
— 9.8 — mA
802.15.4, f = 2.4 GHz, ZigBee
stack running
— 9.2 — mA
Current consumption in
transmit mode
ITX f = 2.4 GHz, CW, 10 dBm Module,
0 dBm output power
— 16.1 — mA
f = 2.4 GHz, CW, 10 dBm Module,
10 dBm output power
— 34.1 — mA
f = 2.4 GHz, CW, 20 dBm Module,
10 dBm output power, VDD = 3.0
V
— 59.7 — mA
f = 2.4 GHz, CW, 20 dBm Module,
POUT = 19.6 dBm, VDD = 3.3 V1
— 181.3 — mA
f = 2.4 GHz, CW, 20 dBm Module,
POUT =19.2 dBm, VDD = 3.3 V 2
— 173 — mA
Note:
1. The maximum power for when not using Bluetooth Low-Energy is limited to 19.6 dBm.
2. The maximum power for Bluetooth Low-Energy is limited to 19.2 dBm.
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4.5 RF Transmitter General Characteristics
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. Measured with RF center frequency of 2.45 GHz on
RF2G4_IO2 port.
Table 4.5. RF Transmitter General Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
RF tuning frequency range FRANGE 2400 — 2483.5 MHz
Maximum TX output power 1POUTMAX 20 dBm Module, VDD = 3.3V2— 19.6 — dBm
20 dBm Module, BLE, VDD =
3.3V3
— 19.2 — dBm
10 dBm Module — 10 — dBm
Minimum active TX Power POUTMIN 20 dBm Module, VDD = 3.3 V — -20.5 — dBm
10 dBm Module — -19.3 — dBm
Output power step size POUTSTEP 10 dBm Module, -5 dBm < POUT <
0 dBm
— 1.5 — dB
10 dBm Module, 0 dBm < POUT <
10 dBm
— 1.0 — dB
20 dBm Module, 0 dBm < POUT <
5 dBm
— 0.7 — dB
20 dBm Module, 5 dBm < POUT <
POUTMAX
— 0.5 — dB
Output power variation vs
VDD supply voltage, Freq =
2450MHz
POUTVAR_V 20 dBm Module, POUT =
POUTMAX VDD swept from 3.0V
to 3.8V.
— 1.0 — dB
10 dBm Module, POUT =
POUTMAX VDD swept from 1.8V
to 3.0V.
— 0.2 — dB
Output power variation vs
temperature, Freq =
2450MHz
POUTVAR_T 20 dBm Module, POUT =
POUTMAX, VDD = 3.3V, tempera-
ture swept from -40 to +125 °C.
— 1.5 — dB
10 dBm Module, POUT =
POUTMAX, VDD = 3.0V, tempera-
ture swept from -40 to +125 °C.
— 0.3 — dB
Output power variation vs RF
frequency
POUTVAR_F 20 dBm Module, POUT =
POUTMAX, VDD = 3.3V, Freq.
swept from 2400 to 2483.5 MHz
— 0.2 — dB
10 dBm Module, POUT =
POUTMAX, VDD = 3.0V, Freq.
swept from 2400 to 2483.5 MHz
— 0.2 — dB
Note:
1. Supported transmit power levels are determined by the ordering part number (OPN). Transmit power ratings for all devices cov-
ered in this data sheet can be found in the TX Power column of the Ordering Information Table.
2. The maximum power when not using Bluetooth Low-Energy.
3. The maximum power for Bluetooth Low-Energy.
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4.6 RF Transmitter Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. Measured with RF center frequency of 2.45 GHz on
RF2G4_IO2 port.
Table 4.6. RF Transmitter Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band
Parameter Symbol Test Condition Min Typ Max Unit
Error vector magnitude per
802.15.4-2011
EVM 20 dBm Module, Average across
frequency, signal is DSSS-
OQPSK reference packet, VDD =
3.3 V, Pout = POUTMAX
— 2.7 — % rms
10 dBm Module, Average across
frequency, signal is DSSS-
OQPSK reference packet, Pout =
10 dBm
— 2.7 — % rms
4.7 RF Receiver General Characteristics
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. Measured with RF center frequency of 2.45 GHz on
RF2G4_IO2 port.
Table 4.7. RF Receiver General Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
RF tuning frequency range FRANGE 2400 — 2483.5 MHz
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4.8 RF Receiver Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. RF center frequency 2.45 GHz. Measured on RF2G4_IO2.
Table 4.8. RF Receiver Characteristics for 802.15.4 DSSS-OQPSK in the 2.4 GHz Band
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level, 1% PER
SAT Signal is reference signal1, packet
length is 20 octets
— 10 — dBm
Co-channel interferer rejec-
tion, 1% PER
CCR Desired signal 3 dB above sensi-
tivity limit
— -0.2 — dB
Sensitivity, 1% PER SENS Signal is reference signal, packet
length is 20 octets
— -103.9 — dBm
Image rejection, 1% PER,
desired is reference signal at
3 dB above reference sensi-
tivity level2
IR Interferer is CW in image band3— 43.5 — dB
Blocking rejection of all other
channels, 1% PER, desired
is reference signal at 3 dB
above reference sensitivity
level2, interferer is reference
signal
BLOCK Interferer frequency < desired fre-
quency -3 channel spacing
— 57.6 — dB
Interferer frequency > desired fre-
quency +3 channel spacing
— 57.5 — dB
RSSI resolution RSSIRES -100 dBm to +5 dBm — 0.25 — dB
RSSI accuracy in the linear
region as defined by
802.15.4-2003
RSSILIN — +/-6 — dB
Adjacent channel rejection,
Interferer is reference signal,
1% PER, desired is refer-
ence signal at 3 dB above
reference sensitivity level2
ACRREF1 Interferer is reference signal at +1
channel spacing
— 39.9 — dB
Interferer is reference signal at -1
channel spacing
— 39.2 — dB
Alternate channel rejection,
interferer is reference signal,
1% PER, desired is refer-
ence signal at 3 dB above
reference sensitivity level2
ACRREF2 Interferer is reference signal at +2
channel spacing
— 51.1 — dB
Interferer is reference signal at -2
channel spacing
— 51.6 — dB
Note:
1. Reference signal is defined as O-QPSK DSSS per 802.15.4, Frequency range = 2400-2483.5 MHz, Symbol rate = 62.5 ksym-
bols/s.
2. Reference sensitivity level is -85 dBm.
3. Due to low-IF frequency, there is some overlap of adjacent channel and image channel bands. Adjacent channel CW blocker
tests place the Interferer center frequency at the Desired frequency ± 5 MHz on the channel raster, whereas the image rejection
test places the CW interferer near the image frequency of the Desired signal carrier, regardless of the channel raster.
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4.9 RF Receiver Characteristics for Bluetooth Low Energy at 1 Mbps
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. RF center frequency 2.45 GHz. Measured on RF2G4_IO2.
Table 4.9. RF Receiver Characteristics for Bluetooth Low Energy at 1 Mbps
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal, packet
length is 37 bytes1
— 10 — dBm
Sensitivity SENS Signal is reference signal, 37 byte
payload1
— -97.0 — dBm
With non-ideal signals2 1— -96.7 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 3— +6.6 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +1
MHz offset1 4 3 5
— -8.3 — dB
Interferer is reference signal at -1
MHz offset1 4 3 5
— -8.7 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +2
MHz offset1 4 3 5
— -42.1 — dB
Interferer is reference signal at -2
MHz offset1 4 3 5
— -48.9 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +3
MHz offset1 4 3 5
— -42.4 — dB
Interferer is reference signal at -3
MHz offset1 4 3 5
— -54.8 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 5
— -42.1 — dB
Selectivity to image frequen-
cy ± 1 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +1 MHz with 1
MHz precision1 5
— -42.4 — dB
Interferer is reference signal at im-
age frequency -1 MHz with 1 MHz
precision1 5
— -8.3 — dB
Intermodulation performance IM n = 3 6— -23 — dBm
Note:
1. 0.1% Bit Error Rate.
2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
3. Desired signal -67 dBm.
4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
5. With allowed exceptions.
6. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A, Section 4.4
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4.10 RF Receiver Characteristics for Bluetooth Low Energy at 2 Mbps
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. RF center frequency 2.45 GHz. Measured on RF2G4_IO2.
Table 4.10. RF Receiver Characteristics for Bluetooth Low Energy at 2 Mbps
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal, packet
length is 37 bytes1
— 10 — dBm
Sensitivity SENS Signal is reference signal, 37 byte
payload1
— -94.1 — dBm
With non-ideal signals2 1— -93.9 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 3— +6.0 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +2
MHz offset1 4 3 5
— -8.0 — dB
Interferer is reference signal at -2
MHz offset1 4 3 5
— -8.8 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +4
MHz offset1 4 3 5
— -42.2 — dB
Interferer is reference signal at -4
MHz offset1 4 3 5
— -50.3 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +6
MHz offset1 4 3 5
— -54.4 — dB
Interferer is reference signal at -6
MHz offset1 4 3 5
— -55.4 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 5
— -8.0 — dB
Selectivity to image frequen-
cy ± 1 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +2 MHz with 1
MHz precision1 5
— -42.2 — dB
Interferer is reference signal at im-
age frequency -2 MHz with 1 MHz
precision1 5
— +6.0 — dB
Intermodulation performance IM n = 36— -22.3 — dBm
Note:
1. 0.1% Bit Error Rate.
2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
3. Desired signal -67 dBm.
4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
5. With allowed exceptions.
6. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A, Section 4.4
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4.11 RF Receiver Characteristics for Bluetooth Low Energy at 500 kbps
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. RF center frequency 2.45 GHz. Measured on RF2G4_IO2.
Table 4.11. RF Receiver Characteristics for Bluetooth Low Energy at 500 kbps
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal, packet
length is 37 bytes1
— 10 — dBm
Sensitivity SENS Signal is reference signal1— -100.1 — dBm
With non-ideal signals2 1— -99.3 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 3— +2.1 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +1
MHz offset1 4 3 5
— -9.0 — dB
Interferer is reference signal at -1
MHz offset1 4 3 5
— -9.5 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +2
MHz offset1 4 3 5
— -44.4 — dB
Interferer is reference signal at -2
MHz offset1 4 3 5
— -51.9 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +3
MHz offset1 4 3 5
— -44.3 — dB
Interferer is reference signal at -3
MHz offset1 4 3 5
— -58.3 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 5
— -44.4 — dB
Selectivity to image frequen-
cy ± 1 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +1 MHz with 1
MHz precision1 5
— -44.3 — dB
Interferer is reference signal at im-
age frequency -1 MHz with 1 MHz
precision1 5
— -9.0 — dB
Note:
1. 0.1% Bit Error Rate.
2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
3. Desired signal -72 dBm.
4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
5. With allowed exceptions.
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4.12 RF Receiver Characteristics for Bluetooth Low Energy at 125 kbps
Unless otherwise indicated, typical conditions are: TA = 25 °C, VDD = 3.0V. RF center frequency 2.45 GHz. Measured on RF2G4_IO2.
Table 4.12. RF Receiver Characteristics for Bluetooth Low Energy at 125 kbps
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal, packet
length is 37 bytes1
— 10 — dBm
Sensitivity SENS Signal is reference signal1— -104.5 — dBm
With non-ideal signals2 1— -104.2 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 3— +0.8 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +1
MHz offset1 4 3 5
— -13.1 — dB
Interferer is reference signal at -1
MHz offset1 4 3 5
— -13.6 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +2
MHz offset1 4 3 5
— -49.5 — dB
Interferer is reference signal at -2
MHz offset1 4 3 5
— -56.9 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +3
MHz offset1 4 3 5
— -47.0 — dB
Interferer is reference signal at -3
MHz offset1 4 3 5
— -63.1 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 5
— -49.5 — dB
Selectivity to image frequen-
cy ± 1 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +1 MHz with 1
MHz precision1 5
— -47.0 — dB
Interferer is reference signal at im-
age frequency -1 MHz with 1 MHz
precision1 5
— -13.1 — dB
Note:
1. 0.1% Bit Error Rate.
2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
3. Desired signal -79 dBm.
4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
5. With allowed exceptions.
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