Cypress Semiconductor CY7C1012DV33 User manual

Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600
Document Number: 38-05610 Rev. *D Revised November 6, 2008
CY7C1012DV33
12-Mbit (512K X 24) Static RAM
Features
■ High speed
❐ t
AA
= 10 ns
■ Low active power
❐ I
CC
= 175 mA at 10 ns
■ Low CMOS standby power
❐ I
SB2
= 25 mA
■ Operating voltages of 3.3 ± 0.3V
■ 2.0V data retention
■ Automatic power down when deselected
■ TTL compatible inputs and outputs
■ Available in Pb-free standard 119-ball PBGA
Functional Description
The CY7C1012DV33 is a high performance CMOS static RAM
organizedas512Kwordsby24bits.Eachdatabyteisseparately
controlled by the individual chip selects (CE
1
, CE
2
, and CE
3
).
CE
1
controls the data on the I/O
0
– I/O
7
, while CE
2
controls the
data on I/O
8
– I/O
15
, and CE
3
controls the data on the data pins
I/O
16
– I/O
23
. This device has an automatic power down feature
that significantly reduces power consumption when deselected.
Writing the data bytes into the SRAM is accomplished when the
chipselectcontrollingthatbyteisLOWandthewrite enable input
(WE) input is LOW. Data on the respective input and output (I/O)
pins is then written into the location specified on the address pins
(A
0
–A
18
). Asserting all of the chip selects LOW and write enable
LOW writesall 24 bitsofdataintotheSRAM.Output enable (OE)
is ignored while in WRITE mode.
Data bytes are also individually read from the device. Reading a
byte is accomplished when the chip select controlling that byte
is LOW and write enable (WE) HIGH, while output enable (OE)
remains LOW. Under these conditions, the contents of the
memory location specified on the address pins appear on the
specified data input and output (I/O) pins. Asserting all the chip
selects LOW reads all 24 bits of data from the SRAM.
The 24 I/O pins (I/O
0
– I/O
23
) are placed in a high impedance
state when all the chip selects are HIGH or when the output
enable (OE) is HIGH during a READ mode. For more infor-
mation, see the Truth Table on page 8.
Logic Block Diagram
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUT BUFFER
512K x 24
ARRAY
I/O
0
– I/O
7
OE
I/O
8
– I/O
15
CE
1
, CE
2
, CE
3
WE
I/O
16
– I/O
23
CONTROL LOGIC
A
(9:0)
A
(18:10)
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 2 of 11
Selection Guide
Description –10 Unit
Maximum Access Time 10 ns
Maximum Operating Current 175 mA
Maximum CMOS Standby Current 25 mA
Pin Configuration
Figure 1. 119-Ball PBGA ( Top View)
[1]
1234567
ANCAAAAANC
BNC A A CE
1
AANC
CI/O
12
NC CE
2
NC CE
3
NC I/O
0
DI/O
13
V
DD
V
SS
V
SS
V
SS
V
DD
I/O
1
EI/O
14
V
SS
V
DD
V
SS
V
DD
V
SS
I/O
2
FI/O
15
V
DD
V
SS
V
SS
V
SS
V
DD
I/O
3
GI/O
16
V
SS
V
DD
V
SS
V
DD
V
SS
I/O
4
HI/O
17
V
DD
V
SS
V
SS
V
SS
V
DD
I/O
5
JNC V
SS
V
DD
V
SS
V
DD
V
SS
NC
KI/O
18
V
DD
V
SS
V
SS
V
SS
V
DD
I/O
6
LI/O
19
V
SS
V
DD
V
SS
V
DD
V
SS
I/O
7
MI/O
20
V
DD
V
SS
V
SS
V
SS
V
DD
I/O
8
NI/O
21
V
SS
V
DD
V
SS
V
DD
V
SS
I/O
9
PI/O
22
V
DD
V
SS
V
SS
V
SS
V
DD
I/O
10
RI/O
23
A NCNCNC AI/O
11
TNC A A WE AANC
UNC A A OE AANC
Note
1. NC pins are not connected on the die.
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 3 of 11
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
CC
Relative to GND
[2]
....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[2]
..................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
...............................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW) ........................................20 mA
Static Discharge Voltage............................................>2001V
(MIL-STD-883, Method 3015)
Latch Up Current.....................................................>200 mA
Operating Range
Range Ambient
Temperature V
CC
Industrial –40°C to +85°C3.3V±0.3V
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
[3]
–10 Unit
Min Max
V
OH
Output HIGH Voltage V
CC
= Min, I
OH
= –4.0 mA 2.4 V
V
OL
Output LOW Voltage V
CC
= Min, I
OL
= 8.0 mA 0.4 V
V
IH
Input HIGH Voltage 2.0 V
CC
+ 0.3 V
V
IL[2]
Input LOW Voltage –0.3 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 μA
I
OZ
Output Leakage Current GND < V
OUT
<V
CC
, output disabled –1 +1 μA
I
CC
V
CC
Operating Supply
Current V
CC
= Max, f = f
MAX
= 1/t
RC
I
OUT
= 0 mA CMOS levels 175 mA
I
SB1
Automatic CE Power Down
Current —TTL Inputs Max V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
30 mA
I
SB2
Automatic CE Power Down
Current —CMOS Inputs Max V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V, or V
IN
< 0.3V, f = 0 25 mA
Notes
2. V
IL
(min) = –2.0Vand V
IH
(max) = V
CC
+ 2V for pulse durations of less than 20 ns.
3. CE indicates a combination of all three chip enables. When active LOW, CE indicates the CE
1
or CE
2 ,
or CE
3
is LOW. When HIGH, CE indicates the CE
1 ,
CE
2 ,
and
CE
3
are HIGH.
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 4 of 11
Capacitance
Tested initially and after any design or process changes that may affect these parameters .
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V 8 pF
C
OUT
I/O Capacitance 10 pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions 119-Ball
PBGA Unit
Θ
JA
Thermal Resistance
(junction to ambient) Still air, soldered on a 3 × 4.5 inch, four layer printed circuit board 20.31 °C/W
Θ
JC
Thermal Resistance
(junction to case) 8.35 °C/W
Figure 2. AC Test Loads and Waveforms
[4]
90%
10%
3.0V
GND
90%
10%
All input pulses
3.3V
OUTPUT 5 pF*
(a) (b)
R1 317 Ω
R2
351Ω
Fall Time:> 1V/ns
(c)
OUTPUT 50Ω
Z0= 50Ω
V
TH
= 1.5V
30 pF*
* Capacitive Load consists of all
components of the test environment
Rise Time > 1V/ns
*Including jig
and scope
Note
4. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
DD
(3.0V). 100μs (t
power
) after reaching the minimum operating
V
DD
, normal SRAM operation begins including reduction in V
DD
to the data retention (V
CCDR
, 2.0V) voltage.
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 5 of 11
AC Switching Characteristics
Over the Operating Range
[5]
Parameter Description –10 Unit
Min Max
Read Cycle
t
power [6]
V
CC
(Typical) to the First Access 100 μs
t
RC
Read Cycle Time 10 ns
t
AA
Address to Data Valid 10 ns
t
OHA
Data Hold from Address Change 3 ns
t
ACE
CE Active LOW to Data Valid
[3]
10 ns
t
DOE
OE LOW to Data Valid 5 ns
t
LZOE
OE LOW to Low Z
[7]
1ns
t
HZOE
OE HIGH to High Z
[7]
5ns
t
LZCE
CE Active LOW to Low Z
[3, 7]
3ns
t
HZCE
CE Deselect HIGH to High Z
[3, 7]
5ns
t
PU
CE Active LOW to Power Up
[3, 8]
0ns
t
PD
CE Deselect HIGH to Power Down
[3, 8]
10 ns
Write Cycle
[9, 10]
t
WC
Write Cycle Time 10 ns
t
SCE
CE Active LOW to Write End
[3]
7ns
t
AW
Address Setup to Write End 7 ns
t
HA
Address Hold from Write End 0 ns
t
SA
Address Setup to Write Start 0 ns
t
PWE
WE Pulse Width 7 ns
t
SD
Data Setup to Write End 5.5 ns
t
HD
Data Hold from Write End 0 ns
t
LZWE
WE HIGH to Low Z
[7]
3ns
t
HZWE
WE LOW to High Z
[7]
5ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V. Test conditions for the read cycle use
output loading as shown in part a) of Figure 2, unless specified otherwise.
6. t
POWER
gives the minimum amount of time that the power supply is at typical V
CC
values until the first memory access is performed.
7. t
HZOE
, t
HZCE
, t
HZWE
, t
LZOE
, t
LZCE
, and t
LZWE
are specified with a load capacitance of 5 pF as in part (b) ofFigure 2. Transition is measured ±200 mV from steady state
voltage.
8. These parameters are guaranteed by design and are not tested.
9. The internal write time of the memory is defined by the overlap of CE
1
or CE
2
or CE
3
LOW and WE LOW. Chip enables must be active and WE must be LOW to initiate
a write. The transition of any of these signals terminate the write. The input data setup and hold timing are referenced to the leading edge of the signal that terminates
the write.
10.The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 6 of 11
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions
[3]
Min Typ Max Unit
V
DR
V
CC
for Data Retention 2 V
I
CCDR
Data Retention Current V
CC
= 2V, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V 25 mA
t
CDR [11]
Chip Deselect to Data Retention
Time 0ns
t
R [12]
Operation Recovery Time t
RC
ns
Data Retention Waveform
Switching Waveforms
Figure 3. Read Cycle No. 1
[13, 14]
Figure 4. Read Cycle No. 2 (OE Controlled)
[3, 14, 15]
3.0V3.0V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
PREVIOUS DATA VALID DATA VALID
RC
t
AA
t
OHA
t RC
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
PD
t
HZCE
OE
CE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
HIGH
IMPEDANCE
I
CC
I
SB
Notes
11. Tested initially and after any design or process changes that may affect these parameters.
12.Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
>50 μs or stable at V
CC(min)
>50 μs.
13.Device is continuously selected. OE, CE = V
IL
.
14.WEis HIGH for read cycle.
15.Address valid before or similar to CEtransition LOW.
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 7 of 11
Figure 5. Write Cycle No. 1 (CE Controlled)
[3, 16, 17]
Figure 6. Write Cycle No. 2 (WE Controlled, OE HIGH During Write)
[3, 16, 17]
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW)
[3, 17]
Switching Waveforms (continued)
t
WC
DATA VALID
t
AW
t
SA
t
PWE
t
HA
t
HD
t
SD
t
SCE
t
SCE
CE
WE
DATA I/O
ADDRESS
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE 18
DATA VALID
t
HD
t
SD
t
LZWE
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZWE
CE
ADDRESS
WE
DATA I/O NOTE
18
Notes
16.Data I/O is high impedance if OE= V
IH
.
17.If CEgoes HIGH simultaneously with WE going HIGH, the output remains ina high impedance state.
18.During this period, the I/Os are in output state. Do not apply input signals.
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 8 of 11
Truth Table
CE
1
CE
2
CE
3
OE WE I/O
0
– I/O
7
I/O
8
– I/O
15
I/O
16
– I/O
23
Mode Power
H H H X X High Z High Z High Z Power Down Standby (I
SB
)
L H H L H Data Out High Z High Z Read Active (I
CC
)
H L H L H High Z Data Out High Z Read Active (I
CC
)
H H L L H High Z High Z Data Out Read Active (I
CC
)
LLLLHFullDataOutFullDataOutFullDataOutRead Active(I
CC
)
L H H X L Data In High Z High Z Write Active (I
CC
)
H L H X L High Z Data In High Z Write Active (I
CC
)
H H L X L High Z High Z Data In Write Active (I
CC
)
L L L X L Full Data In Full Data In Full Data In Write Active (I
CC
)
L L L H H High Z High Z High Z Selected,
Outputs Disabled Active (I
CC
)
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 9 of 11
Ordering Information
Speed
(ns) Ordering Code Package Name Package Type Operating Range
10 CY7C1012DV33-10BGXI 51-85115 119-Ball Plastic Ball Grid Array (14 x 22 x 2.4 mm) (Pb-Free) Industrial
Package Diagram
Figure 8. 119-Ball PBGA (14 x 22 x 2.4 mm)
51-85115-*B
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CY7C1012DV33
Document Number: 38-05610 Rev. *D Page 10 of 11
Document History Page
Document Title: CY7C1012DV33 12-Mbit (512K X 24) Static RAM
Document Number: 38-05610
Rev. ECN No. Orig. of
Change Submission Date Description of Change
** 250650 SYT See ECN New data sheet
*A 469517 NXR See ECN Converted from Advance Information to Preliminary
Corrected typo in the Document Title
Removed –10 and –12 speed bins from product offering
Changed J7 Ball of BGA from DNU to NC
Removed Industrial Operating range from product offering
Included the Maximum ratings for Static Discharge Voltage and Latch Up Current
on page 3
Changed I
CC(Max)
from 220 mA to 150 mA
Changed I
SB1(Max)
from 70 mA to 30 mA
Changed I
SB2(Max)
from 40 mA to 25 mA
Specified the Overshoot specification in footnote 1
Updated the Truth Table
Updated the Ordering Information table
*B 499604 NXR See ECN Added note 1 for NC pins
Changed I
CC
specification from 150 mA to 185 mA
Updated Test Condition for I
CC
in DC Electrical Characteristics table
Added note for t
ACE
, t
LZCE
, t
HZCE
, t
PU
, t
PD
, and t
SCE
in AC Switching Characteristics
Table on page 4
*C 1462585 VKN See ECN Converted from preliminary to final
Updated block diagram
Changed I
CC
specification from 185 mA to 225 mA
Updated thermal specs
*D 2604677 VKN/PYRS 11/12/08 Removed Commercial operating range, Added Industrial operating range
Removed 8 ns speed bin, Added 10 ns speed bin,
Modified footnote# 3
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